CN1881642B - 构图纳米导电薄膜的方法 - Google Patents
构图纳米导电薄膜的方法 Download PDFInfo
- Publication number
- CN1881642B CN1881642B CN2006100732819A CN200610073281A CN1881642B CN 1881642 B CN1881642 B CN 1881642B CN 2006100732819 A CN2006100732819 A CN 2006100732819A CN 200610073281 A CN200610073281 A CN 200610073281A CN 1881642 B CN1881642 B CN 1881642B
- Authority
- CN
- China
- Prior art keywords
- carbon
- oxide
- conductive film
- substrate
- atom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- HIABOOSIYBUBKB-UHFFFAOYSA-N CC(N(C1c2cc(cccc3)c3cc2C2c3c1cc(cccc1)c1c3)S2=O)=O Chemical compound CC(N(C1c2cc(cccc3)c3cc2C2c3c1cc(cccc1)c1c3)S2=O)=O HIABOOSIYBUBKB-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/788—Of specified organic or carbon-based composition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
Claims (36)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050052721A KR101223718B1 (ko) | 2005-06-18 | 2005-06-18 | 나노 도전성 막의 패터닝 방법 |
KR52721/05 | 2005-06-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1881642A CN1881642A (zh) | 2006-12-20 |
CN1881642B true CN1881642B (zh) | 2011-09-07 |
Family
ID=37519724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100732819A Active CN1881642B (zh) | 2005-06-18 | 2006-04-07 | 构图纳米导电薄膜的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7884356B2 (zh) |
JP (1) | JP4908940B2 (zh) |
KR (1) | KR101223718B1 (zh) |
CN (1) | CN1881642B (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050116844A (ko) * | 2003-04-02 | 2005-12-13 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 유연한 전자 디바이스와 유연한 디바이스의 제조방법 |
KR100829760B1 (ko) * | 2007-04-10 | 2008-05-15 | 삼성에스디아이 주식회사 | 유기 발광 소자의 제조방법 및 이를 이용하여 제조된 유기발광 소자 |
KR100858823B1 (ko) * | 2007-05-30 | 2008-09-17 | 삼성에스디아이 주식회사 | 유기 발광 표시 장치 |
KR100934260B1 (ko) | 2007-09-14 | 2009-12-28 | 삼성모바일디스플레이주식회사 | 박막트랜지스터와 그의 제조방법, 유기전계발광표시장치와그의 제조방법 및 레이저 열 전사법용 도너기판 |
US20090078933A1 (en) * | 2007-09-21 | 2009-03-26 | Lg Electronics Inc. | Organic light emitting device |
GB2453766A (en) | 2007-10-18 | 2009-04-22 | Novalia Ltd | Method of fabricating an electronic device |
JP2009123396A (ja) * | 2007-11-12 | 2009-06-04 | Dowa Electronics Materials Co Ltd | Ito塗布液およびその製造方法 |
KR101586619B1 (ko) * | 2007-12-20 | 2016-01-21 | 시마 나노 테크 이스라엘 리미티드 | 충전제 재료를 포함하는 투명한 전도성 코팅 |
JP5244378B2 (ja) * | 2007-12-21 | 2013-07-24 | 株式会社日立製作所 | 有機発光表示装置 |
FR2943421B1 (fr) * | 2009-03-18 | 2012-11-30 | Commissariat Energie Atomique | Detection et quantification electrique de derives mercuriques |
WO2011065015A1 (ja) * | 2009-11-30 | 2011-06-03 | 出光興産株式会社 | 有機半導体材料含有組成物及びそれを用いた有機薄膜トランジスタ |
WO2011114713A1 (ja) | 2010-03-15 | 2011-09-22 | 国立大学法人筑波大学 | ナノインク組成物 |
JP5711726B2 (ja) * | 2010-04-22 | 2015-05-07 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子及び照明装置 |
JPWO2012029750A1 (ja) * | 2010-09-02 | 2013-10-28 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子、その製造方法、表示装置及び照明装置 |
SG190408A1 (en) * | 2010-12-01 | 2013-06-28 | Univ Singapore | Method of preparing transparent conducting oxide films |
WO2014072873A1 (en) * | 2012-11-06 | 2014-05-15 | Empire Technology Development Llc | Bi-polar organic semiconductors for thermoelectric power generation |
US9882109B2 (en) | 2012-11-06 | 2018-01-30 | Empire Technology Development Llc | Bi-polar organic semiconductors for thermoelectric power generation |
US8975121B2 (en) * | 2013-05-09 | 2015-03-10 | Johnson & Johnson Vision Care, Inc. | Methods and apparatus to form thin film nanocrystal integrated circuits on ophthalmic devices |
JP6077946B2 (ja) * | 2013-06-19 | 2017-02-08 | 東ソー株式会社 | Itoナノ粒子及びその製造方法 |
CN104332514B (zh) * | 2014-07-18 | 2016-10-05 | 河南科技大学 | 一种纳米晶量子点薄膜、使用该薄膜改性的晶体硅太阳能电池及其制备方法 |
EP3053968B1 (en) | 2015-02-06 | 2017-05-17 | Schaeffler Baltic, SIA | A nanocomposite solid lubricant coating |
US20180283613A1 (en) * | 2017-03-31 | 2018-10-04 | United Technologies Corporation | Compressed gas confinement article with barrier coating |
TWI662730B (zh) * | 2018-03-09 | 2019-06-11 | 謙華科技股份有限公司 | 製備有機發光二極體之熱轉印膜及其製備方法 |
JP7329804B2 (ja) * | 2019-04-24 | 2023-08-21 | 富士フイルム株式会社 | 組成物 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1469814A (zh) * | 2000-09-15 | 2004-01-21 | 3M | 发光聚合物的热转印 |
CN1541504A (zh) * | 2001-08-16 | 2004-10-27 | 3M | 在配置有电活性材料的可聚合的无定形基体上形成图形的方法和材料 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010040487A (ko) * | 1998-02-02 | 2001-05-15 | 유니액스 코포레이션 | X-y 번지지정 가능한 전기 마이크로스위치 어레이 및이를 사용한 센서 매트릭스 |
DE60035078T2 (de) * | 1999-01-15 | 2008-01-31 | 3M Innovative Properties Co., St. Paul | Herstellungsverfahren eines Donorelements für Übertragung durch Wärme |
US6228555B1 (en) * | 1999-12-28 | 2001-05-08 | 3M Innovative Properties Company | Thermal mass transfer donor element |
US6485884B2 (en) * | 2001-04-27 | 2002-11-26 | 3M Innovative Properties Company | Method for patterning oriented materials for organic electronic displays and devices |
US6963080B2 (en) | 2001-11-26 | 2005-11-08 | International Business Machines Corporation | Thin film transistors using solution processed pentacene precursor as organic semiconductor |
EP1388903B1 (en) * | 2002-08-09 | 2016-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Organic electroluminescent device |
KR100550008B1 (ko) * | 2003-02-08 | 2006-02-08 | 한국전자통신연구원 | 펜타센 유도체 및 그 제조 방법과 펜타센 박막 제조 방법 |
JP4396109B2 (ja) * | 2003-03-04 | 2010-01-13 | コニカミノルタホールディングス株式会社 | 薄膜トランジスタ素子の製造方法、薄膜トランジスタ素子及び薄膜トランジスタ素子シート |
US20040180988A1 (en) * | 2003-03-11 | 2004-09-16 | Bernius Mark T. | High dielectric constant composites |
JP2006524916A (ja) * | 2003-03-27 | 2006-11-02 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 感熱性材料を基材に転写するための方法およびドナー要素 |
JP4586334B2 (ja) * | 2003-05-07 | 2010-11-24 | ソニー株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP2005183889A (ja) * | 2003-12-24 | 2005-07-07 | Konica Minolta Holdings Inc | 薄膜トランジスタシート及びその作製方法、それにより形成された薄膜トランジスタ素子 |
US20050139867A1 (en) * | 2003-12-24 | 2005-06-30 | Saito Shin-Ichi | Field effect transistor and manufacturing method thereof |
JP4834992B2 (ja) * | 2003-12-26 | 2011-12-14 | ソニー株式会社 | 半導体装置の製造方法 |
WO2006001923A2 (en) * | 2004-05-17 | 2006-01-05 | The Regents Of The University Of California | Bistable nanoparticle- polymer composite for use in memory devices |
US20060060839A1 (en) * | 2004-09-22 | 2006-03-23 | Chandross Edwin A | Organic semiconductor composition |
-
2005
- 2005-06-18 KR KR1020050052721A patent/KR101223718B1/ko active IP Right Grant
-
2006
- 2006-03-31 US US11/394,085 patent/US7884356B2/en active Active
- 2006-04-07 CN CN2006100732819A patent/CN1881642B/zh active Active
- 2006-06-16 JP JP2006167517A patent/JP4908940B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1469814A (zh) * | 2000-09-15 | 2004-01-21 | 3M | 发光聚合物的热转印 |
CN1541504A (zh) * | 2001-08-16 | 2004-10-27 | 3M | 在配置有电活性材料的可聚合的无定形基体上形成图形的方法和材料 |
Also Published As
Publication number | Publication date |
---|---|
US20060284169A1 (en) | 2006-12-21 |
CN1881642A (zh) | 2006-12-20 |
KR101223718B1 (ko) | 2013-01-18 |
KR20060132396A (ko) | 2006-12-21 |
JP4908940B2 (ja) | 2012-04-04 |
US7884356B2 (en) | 2011-02-08 |
JP2006351543A (ja) | 2006-12-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1881642B (zh) | 构图纳米导电薄膜的方法 | |
CN1881644B (zh) | 形成有机半导体层图案的方法 | |
CN101542744B (zh) | 自对准有机薄膜晶体管及其制造方法 | |
Katz | Recent advances in semiconductor performance and printing processes for organic transistor-based electronics | |
US6987071B1 (en) | Solvent vapor infiltration of organic materials into nanostructures | |
JP5237264B2 (ja) | シリルエチニル基類を有するアセン−チオフェンの共重合体類を含む電子機器 | |
JP6073216B2 (ja) | 有機電子デバイスを作製するための組成物および方法 | |
JP2007300112A (ja) | フォトトランジスタおよび電子機器 | |
CN1494485A (zh) | 电活性有机材料的热成像工艺与产品 | |
CN102218870A (zh) | 用于激光诱致热成像方法的供体基板及其制造方法 | |
JP2014517524A (ja) | ハイブリッド両極性tft | |
KR20070034492A (ko) | 전자 디바이스 | |
CN102396085A (zh) | 制造有机薄膜晶体管的方法 | |
WO2014200309A1 (ko) | 유기태양전지 및 이의 제조방법 | |
CN102498588A (zh) | 经包覆的光电器件以及制造其的方法 | |
TW201609727A (zh) | N-氟烷基取代之二溴萘二亞胺及彼等做為半導體之用途 | |
Sajid et al. | Flexible large area organic light emitting diode fabricated by electrohydrodynamics atomization technique | |
KR102365446B1 (ko) | 메톡시아릴 표면 개질제 및 상기 메톡시아릴 표면 개질제를 포함하는 유기 전자 소자 | |
WO2019039907A2 (ko) | 유기전자소자 및 이의 제조 방법 | |
CN104282803A (zh) | 制造含有半导体纳米颗粒的光吸收层的方法及制造含有所述光吸收层的半导体设备的方法 | |
KR100804540B1 (ko) | 균일한 결정의 유기 반도체층을 구비하는 전자 소자, 상기유기 반도체층을 제조하기 위한 콜로이드 현탁액 및 상기유기 반도체층의 제조방법 | |
CN100499198C (zh) | 有机电子器件 | |
US11211569B2 (en) | Laser printable organic semiconductor compositions and applications thereof | |
Friend | Organic materials for large area electronics | |
Cotella | Innovative organic electroluminescent devices: diarylethenes as light-responsive switches and emissive graphene quantum dots |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20090109 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Samsung SDI Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20090109 |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG MOBILE DISPLAY CO., LTD. Effective date: 20121017 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121017 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Mobile Display Co., Ltd. |