JP4894757B2 - 抵抗記憶素子及び不揮発性半導体記憶装置 - Google Patents
抵抗記憶素子及び不揮発性半導体記憶装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 50
- 239000000463 material Substances 0.000 claims description 72
- 230000008859 change Effects 0.000 claims description 12
- 238000003860 storage Methods 0.000 claims description 4
- 239000011232 storage material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 73
- 239000011229 interlayer Substances 0.000 description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- 238000007254 oxidation reaction Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H10N70/8833—Binary metal oxides, e.g. TaOx
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- Physics & Mathematics (AREA)
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Description
12…抵抗記憶素子
14…セル選択トランジスタ
20…シリコン基板
22…素子分離膜
24…ゲート電極
26,28…ソース/ドレイン領域
30,40,56…層間絶縁膜
32,34,58…コンタクトプラグ
36…ソース線
38…下部電極
42…TiOx膜
44…NiOx膜
46…プラチナ膜
48,50,62…抵抗記憶層
52…上部電極
54…抵抗記憶素子
60…ビット線
本発明の第1実施形態による抵抗記憶素子及び不揮発性半導体記憶装置について図1乃至図11を用いて説明する。
本発明の第2実施形態による抵抗記憶素子及び不揮発性半導体記憶装置について図12を用いて説明する。
本発明は上記実施形態に限らず種々の変形が可能である。
Claims (9)
- 高抵抗状態と低抵抗状態とを記憶し、電圧の印加によって前記高抵抗状態と前記低抵抗状態とを切り換える抵抗記憶素子であって、
一対の電極と、
前記一対の電極間に狭持され、第1の抵抗記憶材料と、前記第1の抵抗記憶材料とは異なる第2の抵抗記憶材料とを含む抵抗記憶層とを有し、
前記第1の抵抗記憶材料は、前記抵抗記憶層の抵抗状態の変化を促進する材料である
ことを特徴とする抵抗記憶素子。 - 請求項1記載の抵抗記憶素子において、
前記抵抗記憶層は、前記第1の抵抗記憶材料よりなる第1の層と、前記第2の抵抗記憶材料よりなる第2の層とを有する
ことを特徴とする抵抗記憶素子。 - 請求項2記載の抵抗記憶素子において、
前記一対の電極のうち、前記第1の層側の前記電極は陰極であり、前記第2の層側の前記電極は陽極である
ことを特徴とする抵抗記憶素子。 - 請求項1記載の抵抗記憶素子において、
前記抵抗記憶層は、前記第1の抵抗記憶材料と前記第2の抵抗記憶材料との混合層である
ことを特徴とする抵抗記憶素子。 - 請求項1乃至4のいずれか1項に記載の抵抗記憶素子において、
前記第1の抵抗記憶材料はTiOxであり、前記第2の抵抗記憶材料はNiOxである
ことを特徴とする抵抗記憶素子。 - 第1の電極と、前記第1の電極上に形成され、第1の抵抗記憶材料と、前記第1の抵抗記憶材料とは異なる第2の抵抗記憶材料とを含む抵抗記憶層と、前記抵抗記憶層上に形成された第2の電極とを有し、高抵抗状態と低抵抗状態とを記憶し、電圧の印加によって前記高抵抗状態と前記低抵抗状態とを切り換える抵抗記憶素子を有し、
前記第1の抵抗記憶材料は、前記抵抗記憶層の抵抗状態の変化を促進する材料である
ことを特徴とする不揮発性半導体記憶装置。 - 請求項6記載の不揮発性半導体記憶装置において、
前記抵抗記憶素子の前記第1の電極に接続された選択トランジスタと、
前記選択トランジスタのゲート電極に接続された第1の信号線と、
前記抵抗記憶素子の前記第2の電極に接続された第2の信号線と
を有する不揮発性半導体記憶装置。 - 請求項6又は7記載の不揮発性半導体記憶装置において、
前記抵抗記憶層は、前記第1の電極上に形成された前記第1の抵抗記憶材料よりなる第1の層と、前記第1の層上に形成された前記第2の抵抗記憶材料よりなる第2の層とを有する
ことを特徴とする不揮発性半導体記憶装置。 - 請求項6又は7記載の不揮発性半導体記憶装置において、
前記抵抗記憶層は、前記第1の抵抗記憶材料と前記第2の抵抗記憶材料との混合層である
ことを特徴とする不揮発性半導体記憶装置。
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PCT/JP2005/013970 WO2007013174A1 (ja) | 2005-07-29 | 2005-07-29 | 抵抗記憶素子及び不揮発性半導体記憶装置 |
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US (1) | US7668002B2 (ja) |
JP (1) | JP4894757B2 (ja) |
KR (1) | KR100960208B1 (ja) |
WO (1) | WO2007013174A1 (ja) |
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WO2010073897A1 (ja) * | 2008-12-26 | 2010-07-01 | 日本電気株式会社 | 抵抗変化素子 |
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JP2010199104A (ja) * | 2009-02-23 | 2010-09-09 | National Institute For Materials Science | ノンポーラ型不揮発性メモリー素子 |
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JP2004253115A (ja) * | 2003-01-30 | 2004-09-09 | Sharp Corp | 半導体記憶装置 |
JP2005123361A (ja) * | 2003-10-16 | 2005-05-12 | Sony Corp | 抵抗変化型不揮発性メモリおよびその製造方法ならびに抵抗変化層の形成方法 |
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