JP4857353B2 - 半導体装置、およびそれを用いたプラズマディスプレイ駆動用半導体装置 - Google Patents
半導体装置、およびそれを用いたプラズマディスプレイ駆動用半導体装置 Download PDFInfo
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- JP4857353B2 JP4857353B2 JP2009047490A JP2009047490A JP4857353B2 JP 4857353 B2 JP4857353 B2 JP 4857353B2 JP 2009047490 A JP2009047490 A JP 2009047490A JP 2009047490 A JP2009047490 A JP 2009047490A JP 4857353 B2 JP4857353 B2 JP 4857353B2
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- Prior art keywords
- semiconductor device
- igbt
- esd
- circuit
- protection circuit
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- 239000004065 semiconductor Substances 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 4
- 230000002265 prevention Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 210000004899 c-terminal region Anatomy 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/28—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using luminous gas-discharge panels, e.g. plasma panels
- G09G3/288—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using luminous gas-discharge panels, e.g. plasma panels using AC panels
- G09G3/296—Driving circuits for producing the waveforms applied to the driving electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/04—Display protection
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Theoretical Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of Gas Discharge Display Tubes (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
102 pベース領域
103 pコンタクト領域
104 nエミッタ領域
105 ゲート酸化膜
106 ゲート電極
107 エミッタ電極
109 nバッファ領域
110 pコレクタ領域
111 コレクタ電極
113 チャネル領域
114 ラッチアップ防止層
115 SOI基板の酸化膜
116 SOI基板の支持基板
117,124 ESD保護回路
118 出力回路
119 IGBT
120 出力回路用IGBT
121 ゲート抵抗
122 MOSトランジスタ
123 プラズマディスプレイ駆動用半導体装置
125 シフトレジスタ回路
126 ラッチ回路
127 セレクタ回路
128 出力段回路
Claims (3)
- 第一の電源配線とグランド配線との電位間に静電気放電に対する保護回路を備えた半導体装置において、
前記第一電源配線と出力端子間及び出力端子と前記グランド配線間に、トーテムポール接続された第一の絶縁ゲートバイポーラトランジスタを半導体基板上に有する出力回路と、
前記保護回路は、前記第一の電源配線と前記グランド配線との間に接続された第二の絶縁ゲートバイポーラトランジスタと、前記第二の絶縁ゲートバイポーラトランジスタのゲート端子と前記グランド配線間に接続されたゲート抵抗を半導体基板上に備え、前記出力回路と並列接続され、
前記第二の絶縁ゲートバイポーラトランジスタは、前記第一の絶縁ゲートバイポーラトランジスタと比較して、不純物濃度が低いラッチアップ動作防止用第一導電型領域を有し、前記第二の絶縁ゲートバイポーラトランジスタのラッチアップ動作開始電圧が前記第一の絶縁ゲートバイポーラトランジスタより低いことを特徴とする半導体装置。 - 請求項1の半導体装置において、
前記保護回路は、前記ゲート抵抗に並列接続されたMOSトランジスタを有することを特徴とする半導体装置。 - 請求項1または請求項2の半導体装置を用いたプラズマディプレイ駆動用半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009047490A JP4857353B2 (ja) | 2009-03-02 | 2009-03-02 | 半導体装置、およびそれを用いたプラズマディスプレイ駆動用半導体装置 |
US12/707,884 US8384124B2 (en) | 2009-03-02 | 2010-02-18 | Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009047490A JP4857353B2 (ja) | 2009-03-02 | 2009-03-02 | 半導体装置、およびそれを用いたプラズマディスプレイ駆動用半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010205808A JP2010205808A (ja) | 2010-09-16 |
JP4857353B2 true JP4857353B2 (ja) | 2012-01-18 |
Family
ID=42666649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009047490A Expired - Fee Related JP4857353B2 (ja) | 2009-03-02 | 2009-03-02 | 半導体装置、およびそれを用いたプラズマディスプレイ駆動用半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8384124B2 (ja) |
JP (1) | JP4857353B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5779025B2 (ja) * | 2010-11-08 | 2015-09-16 | 株式会社東芝 | 半導体装置 |
WO2012120802A1 (ja) * | 2011-03-09 | 2012-09-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5801609B2 (ja) | 2011-06-03 | 2015-10-28 | ルネサスエレクトロニクス株式会社 | 保護回路素子 |
US8673426B2 (en) * | 2011-06-29 | 2014-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0555583A (ja) * | 1991-08-27 | 1993-03-05 | Sanyo Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタの製造方法 |
JPH07222459A (ja) * | 1994-01-31 | 1995-08-18 | Matsushita Electric Ind Co Ltd | モータ駆動用igbtモジュール |
US5536958A (en) * | 1995-05-02 | 1996-07-16 | Motorola, Inc. | Semiconductor device having high voltage protection capability |
JP3209091B2 (ja) * | 1996-05-30 | 2001-09-17 | 富士電機株式会社 | 絶縁ゲートバイポーラトランジスタを備えた半導体装置 |
JPH11338415A (ja) * | 1997-03-27 | 1999-12-10 | Hitachi Ltd | 駆動回路及びこれを用いた装置 |
JP3293603B2 (ja) * | 1999-09-17 | 2002-06-17 | トヨタ自動車株式会社 | 電力用半導体装置 |
DE10117483A1 (de) * | 2001-04-07 | 2002-10-17 | Bosch Gmbh Robert | Halbleiterleistungsbauelement und entsprechendes Herstellungsverfahren |
DE10117801B4 (de) * | 2001-04-10 | 2005-12-22 | Robert Bosch Gmbh | Halbleiterleistungsbauelement und entsprechendes Herstellungsverfahren |
JP4133081B2 (ja) * | 2002-07-31 | 2008-08-13 | 東芝三菱電機産業システム株式会社 | モジュール型igbt |
JP4250412B2 (ja) * | 2002-12-13 | 2009-04-08 | 三菱電機株式会社 | 半導体装置 |
US6888710B2 (en) * | 2003-01-03 | 2005-05-03 | Micrel, Incorporated | Insulated gate bipolar transistor and electrostatic discharge cell protection utilizing insulated gate bipolar transistors |
KR100894320B1 (ko) * | 2003-03-24 | 2009-04-24 | 페어차일드코리아반도체 주식회사 | 고전압 집적 회로에 의해 게이트가 구동되는 스위칭소자를 포함하는 인버터 회로 |
EP1760790B1 (en) * | 2004-05-12 | 2019-04-03 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device |
KR100629436B1 (ko) * | 2004-09-08 | 2006-09-27 | 매그나칩 반도체 유한회사 | 고전압 소자의 정전기 보호장치 |
JP4992359B2 (ja) * | 2006-09-15 | 2012-08-08 | 富士電機株式会社 | 表示駆動装置 |
JP5261927B2 (ja) * | 2006-12-11 | 2013-08-14 | パナソニック株式会社 | 半導体装置 |
JP4424368B2 (ja) * | 2007-04-18 | 2010-03-03 | 株式会社日立製作所 | 半導体装置およびそれを用いたプラズマディスプレイ駆動用半導体集積回路装置 |
KR100880231B1 (ko) * | 2007-06-20 | 2009-01-28 | 주식회사 동부하이텍 | 반도체 소자 및 그의 제조 방법 |
KR100934797B1 (ko) * | 2007-12-27 | 2009-12-31 | 주식회사 동부하이텍 | 절연게이트 양극성 트랜지스터 및 그 제조방법 |
-
2009
- 2009-03-02 JP JP2009047490A patent/JP4857353B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-18 US US12/707,884 patent/US8384124B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2010205808A (ja) | 2010-09-16 |
US20100219448A1 (en) | 2010-09-02 |
US8384124B2 (en) | 2013-02-26 |
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