JP4823995B2 - 収差補正型質量分離装置 - Google Patents
収差補正型質量分離装置 Download PDFInfo
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- JP4823995B2 JP4823995B2 JP2007278898A JP2007278898A JP4823995B2 JP 4823995 B2 JP4823995 B2 JP 4823995B2 JP 2007278898 A JP2007278898 A JP 2007278898A JP 2007278898 A JP2007278898 A JP 2007278898A JP 4823995 B2 JP4823995 B2 JP 4823995B2
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- 230000004075 alteration Effects 0.000 title claims description 52
- 238000012937 correction Methods 0.000 title claims description 36
- 238000010884 ion-beam technique Methods 0.000 claims description 156
- 150000002500 ions Chemical class 0.000 claims description 131
- 238000000926 separation method Methods 0.000 claims description 44
- 230000005684 electric field Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 28
- 229910045601 alloy Inorganic materials 0.000 claims description 22
- 239000000956 alloy Substances 0.000 claims description 22
- 230000003287 optical effect Effects 0.000 claims description 18
- 229910002056 binary alloy Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 5
- 230000005496 eutectics Effects 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims 1
- 239000000523 sample Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 12
- 239000007788 liquid Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000004804 winding Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000003801 milling Methods 0.000 description 8
- 238000007689 inspection Methods 0.000 description 7
- 230000005284 excitation Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 229910001385 heavy metal Inorganic materials 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052777 Praseodymium Inorganic materials 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910000595 mu-metal Inorganic materials 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001793 charged compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/26—Mass spectrometers or separator tubes
- H01J49/28—Static spectrometers
- H01J49/284—Static spectrometers using electrostatic and magnetic sectors with simple focusing, e.g. with parallel fields such as Aston spectrometer
- H01J49/286—Static spectrometers using electrostatic and magnetic sectors with simple focusing, e.g. with parallel fields such as Aston spectrometer with energy analysis, e.g. Castaing filter
- H01J49/288—Static spectrometers using electrostatic and magnetic sectors with simple focusing, e.g. with parallel fields such as Aston spectrometer with energy analysis, e.g. Castaing filter using crossed electric and magnetic fields perpendicular to the beam, e.g. Wien filter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
- H01J2237/057—Energy or mass filtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0805—Liquid metal sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Description
Fe=q・E (1)、
及びローレンツ力
Fm=q・(vxB) (2)、
によって付与される。
θ=ql(νB−E)/(mν2) (3)
dθ/dν=−(ql/mν2)(1−2E/νB) (4)、
の観点から理解することが可能である。
Claims (24)
- イオンビーム装置であって、
第1軸(142)に沿って放射されるイオンビーム(170)を発生させるためのイオンビーム源(110)と、
イオンビームを整形するよう適合された開口ユニット(152)と、
所定の質量のイオンビームのイオンを偏向角(146)でもって収差補正型の偏向をするよう適合され、これによって同一質量を有するが速度の異なるイオンが実質的に同じ偏向角で偏向される収差補正型偏向ユニット(162)を含み、
収差補正型偏向ユニットは、
電場を発生させるための電場発生コンポーネント(165、466、567)と、
実質的に電場に直交する磁場を発生させるための磁場発生コンポーネント(163、464、569)を含み、
前記イオンビーム装置は更に所定の質量とは異なる質量のイオンをブロックし、既定の質量を有するイオンがその内部に侵入可能となるよう適合された質量分離開口部(154)と、
第1軸に対して傾斜した第2光軸(144)を有する対物レンズ(124)を含むイオンビーム装置。 - イオンビーム源が液体金属合金イオン源である請求項1記載のイオンビーム装置。
- 液体金属合金イオン源がシリコンと100g/モルを越える質量を有する材料とを含む二元合金である請求項2記載イオンビーム装置。
- 二元合金がPrSiである請求項3記載のイオンビーム装置。
- 金属合金が共晶である請求項2〜4のいずれか1項記載のイオンビーム装置。
- 第1軸(142)と第2光軸(144)との傾斜が少なくとも0.5°である上記請求項のいずれか1項記載のイオンビーム装置。
- 収差補正型偏向ユニットが、
電場を発生させるための1つの電場発生コンポーネントと、
実質的に電場に直交する磁場を発生させるための1つの磁場発生コンポーネントから成る上記請求項のいずれか1項記載のイオンビーム装置。 - 電場発生コンポーネントと磁場発生コンポーネントが調節可能なDC電源に接続されている上記請求項のいずれか1項記載のイオンビーム装置。
- 磁場発生コンポーネントのインダクタンスが0.1〜2μHである上記請求項のいずれか1項記載のイオンビーム装置。
- 磁場発生コンポーネントが50〜250アンペアターンを有する上記請求項のいずれか1項記載のイオンビーム装置。
- 磁場発生コンポーネントが少なくとも30、好ましくは少なくとも50の巻数を有するコイルを含む上記請求項のいずれか1項記載のイオンビーム装置。
- 電場発生コンポーネントが4V/mm〜75V/mmの電場を発生するように適合されている上記請求項のいずれか1項記載のイオンビーム装置。
- 質量分離開口部(154)が、所定の質量のイオンから成る群のイオンから成るイオンビームのビーム直径より大きい直径を有する上記請求項のいずれか1項記載のイオンビーム装置。
- 質量分離開口部が、所定の質量を有するイオン及び所定の質量±5g/モル範囲の質量を有するイオンから成る群のイオンから成るイオンビームのビーム直径より大きい直径を有する請求項1〜12のいずれか1項記載のイオンビーム装置。
- 質量分離開口部の直径が約0.5mm〜3mmである上記請求項のいずれか1項記載のイオンビーム装置。
- 更に集光レンズ(122、322)を含む上記請求項のいずれか1項記載のイオンビーム装置。
- 第1質量と第1質量とは異なる第2質量とを有する2つのイオン種を含むイオンビーム(170)を放射し、
第1質量を有するイオンを少なくとも0.1°の偏向角で収差補正型の偏向をさせて、これによって同一質量を有するが速度の異なるイオンが実質的に同じ偏向角で偏向され、
第2質量を有するイオンをブロックし、
第1質量を有するイオンのイオンビームを試料上に集束させることを含むイオンビーム装置の操作方法。 - 第2質量が第1質量より少なくとも10g/モル分低い請求項17記載の方法。
- 第1質量を有するイオンのイオンビームが試料を改変する請求項17〜18のいずれか1項記載の方法。
- 第2質量が第1質量よりも少なくとも10g/モル分高い請求項17記載の方法。
- 第1質量を有するイオンのイオンビームを試料の検査に使用する請求項20記載の方法。
- イオンビーム電流をアプリケーションごとに変化させる請求項17〜21のいずれか1項記載の方法。
- イオンビーム電流を偏向角を変えることなくアプリケーションに応じて変化させる請求項17〜21のいずれか1項記載の方法。
- 同一の質量と異なる速度を有するイオンが実質的に同一の偏向角で偏向される請求項17〜21のいずれか1項記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07002552A EP1956630A1 (en) | 2007-02-06 | 2007-02-06 | Achromatic mass separator |
EP07002552.3 | 2007-02-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008192596A JP2008192596A (ja) | 2008-08-21 |
JP4823995B2 true JP4823995B2 (ja) | 2011-11-24 |
Family
ID=38535366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007278898A Expired - Fee Related JP4823995B2 (ja) | 2007-02-06 | 2007-10-26 | 収差補正型質量分離装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8049180B2 (ja) |
EP (1) | EP1956630A1 (ja) |
JP (1) | JP4823995B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080078750A1 (en) * | 2004-08-24 | 2008-04-03 | Sela Semiconductor Engineering Laboratories Ltd. | Directed Multi-Deflected Ion Beam Milling of a Work Piece and Determining and Controlling Extent Thereof |
EP2091068A1 (en) * | 2008-02-15 | 2009-08-19 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | A sensor, a monitoring system and a method for detecting a substance in a gas sample |
EP2312610B1 (en) * | 2009-10-15 | 2015-11-25 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle device with an achromatic beam deflector, or an achromatic beam separator, and method of operating |
US8373136B2 (en) | 2009-10-15 | 2013-02-12 | Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh | Achromatic beam deflector, achromatic beam separator, charged particle device, method of operating an achromatic beam deflector, and method of operating an achromatic beam separator |
JP5666227B2 (ja) * | 2009-10-15 | 2015-02-12 | アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー | 色収差補正ビーム偏向器、色収差補正ビーム分離器、荷電粒子デバイス、色収差補正ビーム偏向器を動作させる方法、及び色収差補正ビーム分離器を動作させる方法 |
EP2510534A2 (de) * | 2009-12-11 | 2012-10-17 | Robert Bosch GmbH | Vorrichtung und verfahren zur ionenstrahlmodifikation eines halbleitersubstrates |
CN110660633B (zh) * | 2019-08-28 | 2022-03-25 | 中科晶源微电子技术(北京)有限公司 | 维恩过滤器和带电粒子束成像设备 |
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US4590379A (en) * | 1980-09-16 | 1986-05-20 | Martin Frederick W | Achromatic deflector and quadrupole lens |
EP0107320A3 (en) * | 1982-09-17 | 1986-11-20 | Dubilier Scientific Limited | Improvements relating to ion-beam apparatus |
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JPS61240553A (ja) * | 1985-04-18 | 1986-10-25 | Jeol Ltd | イオンビ−ム描画装置 |
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EP0523033A1 (de) * | 1991-07-10 | 1993-01-13 | IMS Ionen Mikrofabrikations Systeme Gesellschaft m.b.H. | Ionenoptisches Abbildungssystem |
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EP0745266B1 (en) * | 1994-11-18 | 2003-05-14 | Frederick Wight Martin | Chromatically compensated particle-beam column |
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DE69903439T2 (de) * | 1999-11-12 | 2003-07-03 | Advantest Corp., Tokio/Tokyo | Ablenkeinheit zur Separation zweier Teilchenstrahlen |
US6410924B1 (en) * | 1999-11-16 | 2002-06-25 | Schlumberger Technologies, Inc. | Energy filtered focused ion beam column |
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JP4993849B2 (ja) * | 2004-05-31 | 2012-08-08 | 株式会社日立ハイテクノロジーズ | 不良検査装置及び荷電粒子線装置 |
EP1622184B1 (en) * | 2004-07-28 | 2011-05-18 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Emitter for an ion source and method of producing same |
EP1622182B1 (en) | 2004-07-28 | 2007-03-21 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Emitter for an ion source and method of producing same |
WO2007008792A2 (en) * | 2005-07-08 | 2007-01-18 | Nexgensemi Holdings Corporation | Apparatus and method for controlled particle beam manufacturing |
WO2008140585A1 (en) * | 2006-11-22 | 2008-11-20 | Nexgen Semi Holding, Inc. | Apparatus and method for conformal mask manufacturing |
-
2007
- 2007-02-06 EP EP07002552A patent/EP1956630A1/en not_active Withdrawn
- 2007-10-26 US US11/925,598 patent/US8049180B2/en active Active
- 2007-10-26 JP JP2007278898A patent/JP4823995B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20080185514A1 (en) | 2008-08-07 |
JP2008192596A (ja) | 2008-08-21 |
US8049180B2 (en) | 2011-11-01 |
EP1956630A1 (en) | 2008-08-13 |
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