JP4703138B2 - 絶縁ゲート型半導体装置 - Google Patents
絶縁ゲート型半導体装置 Download PDFInfo
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- JP4703138B2 JP4703138B2 JP2004181580A JP2004181580A JP4703138B2 JP 4703138 B2 JP4703138 B2 JP 4703138B2 JP 2004181580 A JP2004181580 A JP 2004181580A JP 2004181580 A JP2004181580 A JP 2004181580A JP 4703138 B2 JP4703138 B2 JP 4703138B2
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- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 35
- 230000002093 peripheral effect Effects 0.000 claims description 30
- 238000002955 isolation Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005192 partition Methods 0.000 claims 1
- 239000000969 carrier Substances 0.000 description 24
- 239000010410 layer Substances 0.000 description 23
- 239000011229 interlayer Substances 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 6
- 238000007599 discharging Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
半導体基板周辺部に周回状に形成され、内部の素子領域を画定する分離構造と、
前記半導体基板であって前記分離構造の外側に形成された周辺拡散領域と、
前記素子領域内に形成され、絶縁されたトレンチゲートで分割され、表面部にエミッタ領域を有するベース領域と、コレクタ領域と、前記エミッタ領域および前記ベース領域と接続されるエミッタ電極とを備えた複数のセル構造と、
前記セル構造に隣接し、表面部に前記エミッタ電極と接続されたエミッタ領域を有しないベース領域であるダミーベース領域と、
前記周辺拡散領域を前記エミッタ電極と電気的に接続する接続部と、を備え、
前記エミッタ電極は複数列2行の分割部分に分割され、各分割部分の端部において前記接続部が設けられたことを特徴とする絶縁ゲート型半導体装置が提供される。
1,12 エミッタ電極
15 金属配線
18 スルーホール
9,55 最内周終端部
56 ダミーベース領域
57 ベース領域
58 層間絶縁膜
59 トレンチゲート電極
60 エミッタ領域
61 エミッタ電極
62 キャリア排出用拡散層
Claims (2)
- 半導体基板周辺部に周回状に形成され、内部の素子領域を画定する分離構造と、
前記半導体基板であって前記分離構造の外側に形成された周辺拡散領域と、
前記素子領域内に形成され、絶縁されたトレンチゲートで分割され、表面部にエミッタ領域を有するベース領域と、コレクタ領域と、前記エミッタ領域および前記ベース領域と接続されるエミッタ電極とを備えた複数のセル構造と、
前記セル構造に隣接し、表面部に前記エミッタ電極と接続されたエミッタ領域を有しないベース領域であるダミーベース領域と、
前記周辺拡散領域を前記エミッタ電極と電気的に接続する接続部と、を備え、
前記エミッタ電極は複数列2行の分割部分に分割され、各分割部分の端部において前記接続部が設けられたことを特徴とする絶縁ゲート型半導体装置。 - 両端の列のいずれかのコーナ部にゲート電極が設けられ、このゲート電極とこのコーナ部が属する区画に設けられた分割エミッタ電極との間に前記周辺拡散領域が延びており、この区画ではこの周辺拡散領域と前記分割エミッタ電極との間に前記接続部が設けられたことを特徴とする請求項1に記載の絶縁ゲート型半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004181580A JP4703138B2 (ja) | 2004-06-18 | 2004-06-18 | 絶縁ゲート型半導体装置 |
EP05013117A EP1608024A3 (en) | 2004-06-18 | 2005-06-17 | Insulated gate semiconductor device |
US11/154,743 US7211861B2 (en) | 2004-06-18 | 2005-06-17 | Insulated gate semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004181580A JP4703138B2 (ja) | 2004-06-18 | 2004-06-18 | 絶縁ゲート型半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011013429A Division JP2011082585A (ja) | 2011-01-25 | 2011-01-25 | 絶縁ゲート型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006005248A JP2006005248A (ja) | 2006-01-05 |
JP4703138B2 true JP4703138B2 (ja) | 2011-06-15 |
Family
ID=34982161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004181580A Expired - Fee Related JP4703138B2 (ja) | 2004-06-18 | 2004-06-18 | 絶縁ゲート型半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7211861B2 (ja) |
EP (1) | EP1608024A3 (ja) |
JP (1) | JP4703138B2 (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4721653B2 (ja) * | 2004-05-12 | 2011-07-13 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置 |
JP2006303287A (ja) * | 2005-04-22 | 2006-11-02 | Toshiba Corp | 電力用半導体装置 |
JP5044950B2 (ja) * | 2006-03-14 | 2012-10-10 | 株式会社デンソー | 半導体装置 |
JP5092548B2 (ja) * | 2007-05-30 | 2012-12-05 | 株式会社デンソー | 半導体装置 |
JP5596278B2 (ja) * | 2007-07-10 | 2014-09-24 | 富士電機株式会社 | トレンチ型絶縁ゲートmos半導体装置 |
JP5359182B2 (ja) * | 2008-01-28 | 2013-12-04 | 富士電機株式会社 | 半導体装置 |
US8264033B2 (en) | 2009-07-21 | 2012-09-11 | Infineon Technologies Austria Ag | Semiconductor device having a floating semiconductor zone |
KR101171886B1 (ko) * | 2009-07-31 | 2012-08-07 | 에스케이하이닉스 주식회사 | 매립게이트를 구비한 반도체장치 및 그 제조 방법 |
JP5638218B2 (ja) * | 2009-10-15 | 2014-12-10 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
KR101070289B1 (ko) * | 2009-12-30 | 2011-10-06 | 주식회사 하이닉스반도체 | 반도체 장치 제조방법 |
JP2011187693A (ja) * | 2010-03-09 | 2011-09-22 | Toshiba Corp | 半導体装置 |
JP5287893B2 (ja) * | 2011-02-08 | 2013-09-11 | 株式会社デンソー | 半導体装置およびその製造方法 |
EP2725623B1 (en) | 2011-09-08 | 2019-10-30 | Fuji Electric Co., Ltd. | Semiconductor device |
JP5973730B2 (ja) * | 2012-01-05 | 2016-08-23 | ルネサスエレクトロニクス株式会社 | Ie型トレンチゲートigbt |
JP5990437B2 (ja) * | 2012-09-10 | 2016-09-14 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP6077252B2 (ja) * | 2012-09-28 | 2017-02-08 | エスアイアイ・セミコンダクタ株式会社 | 半導体集積回路装置 |
JP6094392B2 (ja) | 2013-06-11 | 2017-03-15 | 株式会社デンソー | 半導体装置 |
JP6038737B2 (ja) * | 2013-06-24 | 2016-12-07 | 株式会社 日立パワーデバイス | 半導体装置及びそれを用いた電力変換装置 |
JP5987990B2 (ja) * | 2013-08-15 | 2016-09-07 | 富士電機株式会社 | 半導体装置 |
WO2015037095A1 (ja) * | 2013-09-11 | 2015-03-19 | 富士電機株式会社 | 半導体装置 |
JP2015162610A (ja) * | 2014-02-27 | 2015-09-07 | 株式会社東芝 | 半導体装置 |
CN107949916B (zh) * | 2015-08-26 | 2021-07-16 | 三菱电机株式会社 | 半导体元件 |
KR101870808B1 (ko) * | 2016-06-03 | 2018-06-27 | 현대오트론 주식회사 | 전력 반도체 소자 및 그 제조방법 |
DE102016112018B4 (de) * | 2016-06-30 | 2020-03-12 | Infineon Technologies Ag | Leistungshalbleitervorrichtung mit vollständig verarmten Kanalregionen |
JP6953734B2 (ja) * | 2017-02-06 | 2021-10-27 | 富士電機株式会社 | 半導体装置 |
DE102018112344A1 (de) | 2017-05-29 | 2018-11-29 | Infineon Technologies Ag | Leistungshalbleitervorrichtung mit dV/dt-Steuerbarkeit und Quergrabenanordnung |
KR101949519B1 (ko) * | 2017-06-27 | 2019-04-29 | 현대오트론 주식회사 | 전력 반도체 소자 및 그 제조방법 |
JP7027287B2 (ja) * | 2018-09-19 | 2022-03-01 | 株式会社東芝 | 半導体装置 |
JP6806213B2 (ja) * | 2019-10-02 | 2021-01-06 | 三菱電機株式会社 | 半導体素子 |
CN111933702B (zh) * | 2020-09-22 | 2021-01-29 | 中芯集成电路制造(绍兴)有限公司 | 绝缘栅双极型晶体管及其制造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH10163483A (ja) * | 1996-11-29 | 1998-06-19 | Toshiba Corp | 電力用半導体装置 |
JPH10173170A (ja) * | 1996-12-05 | 1998-06-26 | Toshiba Corp | 半導体装置 |
JPH11345969A (ja) * | 1998-06-01 | 1999-12-14 | Toshiba Corp | 電力用半導体装置 |
JP2001168324A (ja) * | 1999-12-06 | 2001-06-22 | Toyota Central Res & Dev Lab Inc | 半導体装置 |
JP2001203356A (ja) * | 2000-01-20 | 2001-07-27 | Toshiba Corp | 半導体装置 |
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JPH10256550A (ja) * | 1997-01-09 | 1998-09-25 | Toshiba Corp | 半導体装置 |
JP3545590B2 (ja) * | 1997-03-14 | 2004-07-21 | 株式会社東芝 | 半導体装置 |
FR2776872B1 (fr) * | 1998-03-25 | 2000-06-02 | Nortel Matra Cellular | Procede d'egalisation numerique, et recepteur de radiocommunication mettant en oeuvre un tel procede |
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KR100745557B1 (ko) | 1999-02-17 | 2007-08-02 | 가부시키가이샤 히타치세이사쿠쇼 | Igbt 및 전력변환 장치 |
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JP2001168333A (ja) | 1999-09-30 | 2001-06-22 | Toshiba Corp | トレンチゲート付き半導体装置 |
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JP4581179B2 (ja) * | 2000-04-26 | 2010-11-17 | 富士電機システムズ株式会社 | 絶縁ゲート型半導体装置 |
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JP3906181B2 (ja) * | 2003-05-26 | 2007-04-18 | 株式会社東芝 | 電力用半導体装置 |
JP2004363136A (ja) * | 2003-06-02 | 2004-12-24 | Nec Electronics Corp | 半導体回路装置 |
-
2004
- 2004-06-18 JP JP2004181580A patent/JP4703138B2/ja not_active Expired - Fee Related
-
2005
- 2005-06-17 US US11/154,743 patent/US7211861B2/en not_active Expired - Fee Related
- 2005-06-17 EP EP05013117A patent/EP1608024A3/en not_active Withdrawn
Patent Citations (5)
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JPH10163483A (ja) * | 1996-11-29 | 1998-06-19 | Toshiba Corp | 電力用半導体装置 |
JPH10173170A (ja) * | 1996-12-05 | 1998-06-26 | Toshiba Corp | 半導体装置 |
JPH11345969A (ja) * | 1998-06-01 | 1999-12-14 | Toshiba Corp | 電力用半導体装置 |
JP2001168324A (ja) * | 1999-12-06 | 2001-06-22 | Toyota Central Res & Dev Lab Inc | 半導体装置 |
JP2001203356A (ja) * | 2000-01-20 | 2001-07-27 | Toshiba Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US7211861B2 (en) | 2007-05-01 |
EP1608024A2 (en) | 2005-12-21 |
EP1608024A3 (en) | 2008-08-06 |
JP2006005248A (ja) | 2006-01-05 |
US20050280078A1 (en) | 2005-12-22 |
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