JP4699287B2 - 白色発光素子およびその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 109
- 229910052751 metal Inorganic materials 0.000 claims description 72
- 239000002184 metal Substances 0.000 claims description 72
- 239000004065 semiconductor Substances 0.000 claims description 69
- 150000004767 nitrides Chemical class 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 35
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 230000000903 blocking effect Effects 0.000 claims description 16
- 239000010948 rhodium Substances 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 6
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 23
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 238000000605 extraction Methods 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 229910015363 Au—Sn Inorganic materials 0.000 description 3
- 229910020220 Pb—Sn Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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Description
22 n型窒化物半導体層
24、25 青色及び緑活性層
26 p型窒化物半導体層
27 電流遮断層
28 高反射性金属層
31 シリコンサブマウント基板
32 p側共通電極
40 第2発光部
41 GaAs基板
42 n型AlGaInP系半導体層
45 赤色活性層
46 p型AlGaInP系半導体層
49 n側共通電極
60 第1発光部
61a 凹凸パターン
61 伝導性基板
62 n型窒化物半導体層
64、65 窒化物系活性層
66 p型窒化物半導体層
68 第1金属層
69 n側電極
71 伝導性サブマウント基板
72 p側電極
77 絶縁層
78 第2金属層
80 第2発光部
82 n型AlGaInP系半導体層
88 p側電極
89 第2のn側電極
90 白色発光素子
120 第1発光部
121 絶縁性基板
121a 凹凸パターン
123 n型窒化物半導体層
124、125 窒化物系活性層
126 p型窒化物半導体層
128 第1金属層
130 白色発光素子
131 サブマウント基板
132a p側リード電極
132b n側リード電極
138 第2金属層
140 第2発光部
142、143 n型AlGaInP系半導体層
145 AlGaInP系活性層
146 p型AlGaInP系半導体層
148 p側電極
149 n側電極
Claims (15)
- 伝導性サブマウント基板と、
前記サブマウント基板上に金属層によって接合され、下からp型窒化物半導体層、第1活性層、n型窒化物半導体層及び伝導性基板が順次に積層されて成る第1発光部と、
前記伝導性基板の上面の一領域上に形成され、下からp型AlGaInP系半導体層、第2活性層及びn型AlGaInP系半導体層が順次に積層されて成る第2発光部と、
前記伝導性サブマウント基板の下面と前記n型AlGaInP系半導体層上面にそれぞれ形成されたp側及びn側電極
を含み、
前記第1発光部のp型窒化物半導体層には前記第2発光部が形成された領域と垂直方向に積み重なった領域に前記サブマウント基板と接する表面に沿って形成された電流遮断層をさらに含む白色発光素子。 - 前記第1発光部の伝導性基板と前記第2発光部のp型半導体層は直接ウェーハボンディングによって接合され、前記p側及びn側電極は前記第1及び第2発光部の共通電極であることを特徴とする請求項1に記載の白色発光素子。
- 前記電流遮断層はn型不純物でドーピングされた領域で成ることを特徴とする請求項1に記載の白色発光素子。
- 前記電流遮断層はシリコン酸化膜またはシリコン窒化膜であることを特徴とする請求項1に記載の白色発光素子。
- 前記第1発光部の伝導性基板の前記一領域に形成された絶縁層をさらに含み、前記絶縁層上に前記第2発光部のp型半導体層は追加的な金属層によって接合され、
前記追加的な金属層に接続されたp側電極と前記伝導性基板上に接続された n側電極とをさらに含むことを特徴とする請求項1〜4のいずれか一項に記載の白色発光素子。 - 前記金属層または前記追加的な金属層はアルミニウム(Al)、銀(Ag)、ロジウム(Rh)、ルテニウム(Ru)、白金(Pt)、パラジウム(Pd)及びその合金から成るグループより選択された高反射性金属を含むことを特徴とする請求項1〜5のいずれか一項に記載の白色発光素子。
- 前記伝導性サブマウント基板はp型シリコン基板であることを特徴とする請求項1〜6のいずれか一項に記載の白色発光素子。
- 前記第2発光部が形成された上面面積は前記伝導性基板の残り領域の上面面積より小さいことを特徴とする請求項1〜7のいずれか一項に記載の白色発光素子。
- 前記伝導性基板の前記第2発光部が形成されてない上面領域には凹凸パターンが形成されていることを特徴とする請求項1〜8のいずれか一項に記載の白色発光素子。
- 前記第1活性層は約450〜475nmの波長光を生成し、前記第2活性層は約550〜600nmの波長光を生成することを特徴とする請求項1〜9のいずれか一項に記載の白色発光素子。
- 前記第1活性層はそれぞれ約450〜475nmの波長光と約510〜535nmの波長光を生成する2つの活性層を含み、前記第2活性層は約600〜635nmの波長光を生成することを特徴とする請求項1〜9のいずれか一項に記載の白色発光素子。
- 伝導性基板を用意する段階と、
前記伝導性基板上に、第1波長光を生成する第1活性層を有する第1発光部を形成する段階と、
前記第1発光部の一方の面の一部に電流遮断層を形成する段階と、
前記第1発光部の前記一方の面に金属層を形成する段階と、
前記第1発光部をサブマウント基板に接合する段階と、
前記第1波長光と異なり、前記第1波長光と混色することにより白色光を発生する光である、第2の波長光を生成する第2の活性層を有する第2の発光部を形成する段階と、
前記第2の発光部を伝導性基板に接合する段階と、
前記第2の発光部を選択的に除去する段階と、
前記第2の発光部の形成に用いた前記伝導性基板を除去する段階と、
前記白色光発光素子の両面に電極を形成する段階
を備えたことを特徴とする白色発光素子の製造方法。 - 前記第2の発光部の除去された前記第1発光部の露出面に凹凸パターンを形成する段階をさらに備えたことを特徴とする請求項12に記載の白色発光素子の製造方法。
- 前記第1活性層は約450〜475nmの波長光を生成し、前記第2活性層は約550〜600nmの波長光を生成することを特徴とする請求項12または13に記載の白色発光素子の製造方法。
- 前記第1活性層はそれぞれ約450〜475nmの波長光と約510〜535nmの波長光を生成する2つの活性層を含み、前記第2活性層は約600〜635nmの波長光を生成することを特徴とする請求項12〜14のいずれか一項に記載の白色発光素子の製造方法。
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CN100561759C (zh) | 2009-11-18 |
KR100691177B1 (ko) | 2007-03-09 |
US7935974B2 (en) | 2011-05-03 |
JP2006339646A (ja) | 2006-12-14 |
US7514720B2 (en) | 2009-04-07 |
JP5512493B2 (ja) | 2014-06-04 |
KR20060124510A (ko) | 2006-12-05 |
CN1874017A (zh) | 2006-12-06 |
US20090173955A1 (en) | 2009-07-09 |
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US20060267026A1 (en) | 2006-11-30 |
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