JP4674197B2 - 有機電界発光表示装置及びその製造方法 - Google Patents
有機電界発光表示装置及びその製造方法 Download PDFInfo
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- JP4674197B2 JP4674197B2 JP2006303590A JP2006303590A JP4674197B2 JP 4674197 B2 JP4674197 B2 JP 4674197B2 JP 2006303590 A JP2006303590 A JP 2006303590A JP 2006303590 A JP2006303590 A JP 2006303590A JP 4674197 B2 JP4674197 B2 JP 4674197B2
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- emitting display
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 150000003949 imides Chemical class 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 59
- 239000010408 film Substances 0.000 description 53
- 238000000034 method Methods 0.000 description 13
- 238000004140 cleaning Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 8
- NNJPGOLRFBJNIW-HNNXBMFYSA-N (-)-demecolcine Chemical compound C1=C(OC)C(=O)C=C2[C@@H](NC)CCC3=CC(OC)=C(OC)C(OC)=C3C2=C1 NNJPGOLRFBJNIW-HNNXBMFYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/341—Short-circuit prevention
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
105 バッファ層
112 半導体層
117 ゲート絶縁膜
122 ゲート電極
125 第1層間絶縁膜
131 ソース電極
133 ドレイン電極
135 第2層間絶縁膜
135a ビアホール
141 画素電極
145 画素定義膜
145a 開口部
145_i 中間部分
145_p 外郭部分
155 有機機能膜
160 対向電極
T トラップ
Claims (15)
- 基板と、
前記基板上に位置する画素電極と、
前記画素電極の一部を露出させる開口部と、前記画素電極の周辺部の少なくとも一辺に沿って形成された凹部であるトラップとを備え、BCB、アクリル系フォトレジスト、フェノール系フォトレジスト及びイミド系フォトレジストよりなる群から選ばれたいずれか一つの物質から形成された画素定義膜と、
前記露出された画素電極上に位置して発光層を備えた有機機能膜と、
前記有機機能膜上に位置する対向電極とを含み、
前記画素定義膜は、前記開口部と前記トラップとの間に位置する中間部分と、前記中間部分の外側に位置する外郭部分とを有し、前記中間部分は少なくとも前記画素電極のエッジ部を覆い、前記中間部分の高さは前記外郭部分の高さに比べて低いことを特徴とする有機電界発光表示装置。 - 前記トラップの幅は、500Å乃至10,000Åであることを特徴とする請求項1に記載の有機電界発光表示装置。
- 前記トラップは、四角形である前記画素電極の対向する二辺に位置することを特徴とする請求項1または請求項2に記載の有機電界発光表示装置。
- 前記トラップは、四角形である前記画素電極の四辺に位置することを特徴とする請求項1または請求項2に記載の有機電界発光表示装置。
- 前記トラップは、四角形である前記画素電極のいずれか一辺に位置することを特徴とする請求項1または請求項2に記載の有機電界発光表示装置。
- 前記トラップは、四角形である前記画素電極の隣接する二辺に位置することを特徴とする請求項1または請求項2に記載の有機電界発光表示装置。
- 前記有機機能膜は、電荷輸送層と電荷注入層の両方、あるいはいずれか一方をさらに含むことを特徴とする請求項1から請求項6のいずれか1項に記載の有機電界発光表示装置。
- 基板上に画素電極を形成するステップと、
前記画素電極上に前記画素電極の一部を露出させる開口部と、前記画素電極の周辺部の少なくとも一辺に沿って形成された凹部であるトラップとを備え、BCB、アクリル系フォトレジスト、フェノール系フォトレジスト及びイミド系フォトレジストよりなる群から選ばれたいずれか一つの物質から形成された画素定義膜を形成するステップと、
前記露出された画素電極上に、少なくとも発光層を備えた有機機能膜を形成するステップと、
前記有機機能膜上に対向電極を形成するステップとを含み、
前記画素定義膜を形成するステップでは、前記画素定義膜が、前記開口部と前記トラップとの間に位置する中間部分と、前記中間部分の外側に位置する外郭部分とを有するように形成され、前記中間部分は少なくとも前記画素電極のエッジ部を覆い、前記中間部分の高さは前記外郭部分の高さに比べて低く形成されることを特徴とする有機電界発光表示装置の製造方法。 - 前記画素定義膜の前記中間部分及び前記外郭部分は、ハーフトーンマスクを使用して同時に形成されることを特徴とする請求項8に記載の有機電界発光表示装置の製造方法。
- 前記トラップの幅は、500Å乃至10,000Åであることを特徴とする請求項8または請求項9に記載の有機電界発光表示装置の製造方法。
- 前記トラップは、四角形である前記画素電極の対向する二辺に形成されることを特徴とする請求項8から請求項10のいずれか1項に記載の有機電界発光表示装置の製造方法。
- 前記トラップは、四角形である前記画素電極の四辺に形成されることを特徴とする請求項8から請求項10のいずれか1項に記載の有機電界発光表示装置の製造方法。
- 前記トラップは、四角形である前記画素電極のいずれか一辺に形成されることを特徴とする請求項8から請求項10のいずれか1項に記載の有機電界発光表示装置の製造方法。
- 前記トラップは、四角形である前記画素電極の隣接する二辺に形成されることを特徴とする請求項8から請求項10のいずれか1項に記載の有機電界発光表示装置の製造方法。
- 前記画素定義膜は、BCB、アクリル系フォトレジスト、フェノール系フォトレジスト及びイミド系フォトレジストよりなる群から選ばれたいずれか一つの物質から形成されていることを特徴とする請求項8から請求項14のいずれか1項に記載の有機電界発光表示装置の製造方法。
Applications Claiming Priority (1)
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KR1020050109865A KR100721951B1 (ko) | 2005-11-16 | 2005-11-16 | 이물 트랩구조를 구비하는 유기전계발광표시장치 및 그의제조방법 |
Publications (2)
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JP2007141838A JP2007141838A (ja) | 2007-06-07 |
JP4674197B2 true JP4674197B2 (ja) | 2011-04-20 |
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JP2006303590A Active JP4674197B2 (ja) | 2005-11-16 | 2006-11-09 | 有機電界発光表示装置及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8018141B2 (ja) |
JP (1) | JP4674197B2 (ja) |
KR (1) | KR100721951B1 (ja) |
CN (1) | CN100541814C (ja) |
Families Citing this family (16)
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JP2007294413A (ja) * | 2006-03-29 | 2007-11-08 | Canon Inc | 有機elパネル及びその製造方法 |
US8221177B2 (en) | 2007-02-28 | 2012-07-17 | Canon Kabushiki Kaisha | Organic EL panel including an element substrate dehydrated in a shorter time and method for manufacturing the same |
KR100875101B1 (ko) * | 2007-08-08 | 2008-12-19 | 삼성모바일디스플레이주식회사 | 유기 발광 표시장치 및 유기 발광 표시장치의 제조방법 |
KR101100943B1 (ko) * | 2008-10-31 | 2011-12-29 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치의 제조방법 |
KR101871227B1 (ko) * | 2011-08-12 | 2018-08-03 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 그 제조 방법 |
KR101810048B1 (ko) * | 2011-09-22 | 2017-12-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN102709243B (zh) * | 2012-05-18 | 2015-04-29 | 京东方科技集团股份有限公司 | 有机发光二极管显示面板及其制造方法 |
KR102117849B1 (ko) * | 2013-08-12 | 2020-06-03 | 삼성디스플레이 주식회사 | 유기 발광 표시 패널 및 이의 제조 방법 |
JP2015072770A (ja) * | 2013-10-02 | 2015-04-16 | 株式会社ジャパンディスプレイ | 有機エレクトロルミネッセンス装置及びその製造方法 |
KR102103499B1 (ko) | 2013-10-16 | 2020-04-23 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102141208B1 (ko) | 2014-06-30 | 2020-08-05 | 삼성디스플레이 주식회사 | 휴대용 전자장치 |
KR102201827B1 (ko) * | 2014-09-16 | 2021-01-13 | 엘지디스플레이 주식회사 | 유기발광표시장치, 유기발광표시패널 및 그 제조방법 |
CN105762170B (zh) * | 2014-12-19 | 2019-03-15 | 昆山工研院新型平板显示技术中心有限公司 | Amoled显示装置及其制造方法 |
KR102349282B1 (ko) | 2015-03-27 | 2022-01-11 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
CN111192905A (zh) * | 2020-01-08 | 2020-05-22 | 武汉华星光电半导体显示技术有限公司 | 有机发光二极体显示器件及其制造方法 |
US11424270B2 (en) * | 2020-06-02 | 2022-08-23 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Flexible display device and manufacturing method thereof |
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-
2005
- 2005-11-16 KR KR1020050109865A patent/KR100721951B1/ko active IP Right Grant
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2006
- 2006-11-09 JP JP2006303590A patent/JP4674197B2/ja active Active
- 2006-11-15 US US11/600,501 patent/US8018141B2/en active Active
- 2006-11-16 CN CNB2006101381913A patent/CN100541814C/zh active Active
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JP2005276479A (ja) * | 2004-03-23 | 2005-10-06 | Seiko Epson Corp | 電気光学装置及びその製造方法、並びに電子機器 |
Also Published As
Publication number | Publication date |
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CN1967862A (zh) | 2007-05-23 |
KR20070052151A (ko) | 2007-05-21 |
CN100541814C (zh) | 2009-09-16 |
KR100721951B1 (ko) | 2007-05-25 |
US8018141B2 (en) | 2011-09-13 |
US20070108889A1 (en) | 2007-05-17 |
JP2007141838A (ja) | 2007-06-07 |
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