JP4016144B2 - 有機発光素子およびその製造方法ならびに表示装置 - Google Patents
有機発光素子およびその製造方法ならびに表示装置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010410 layer Substances 0.000 claims description 175
- 239000012044 organic layer Substances 0.000 claims description 62
- 239000000463 material Substances 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 33
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 229910003437 indium oxide Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 229910006854 SnOx Inorganic materials 0.000 claims 1
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 12
- 239000004332 silver Substances 0.000 description 12
- 239000012790 adhesive layer Substances 0.000 description 10
- 230000005525 hole transport Effects 0.000 description 9
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
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- 229910052751 metal Inorganic materials 0.000 description 4
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- 238000002834 transmittance Methods 0.000 description 4
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
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- 229910052697 platinum Inorganic materials 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- YPJRZWDWVBNDIW-MBALSZOMSA-N n,n-diphenyl-4-[(e)-2-[4-[4-[(e)-2-[4-(n-phenylanilino)phenyl]ethenyl]phenyl]phenyl]ethenyl]aniline Chemical group C=1C=C(N(C=2C=CC=CC=2)C=2C=CC=CC=2)C=CC=1/C=C/C(C=C1)=CC=C1C(C=C1)=CC=C1\C=C\C(C=C1)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 YPJRZWDWVBNDIW-MBALSZOMSA-N 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Description
図1は、本発明の第1の実施の形態に係る表示装置の断面構造を表すものである。この表示装置は、極薄型の有機発光ディスプレイとして用いられるものであり、駆動パネル10と封止パネル20とが対向配置され、例えば熱硬化型樹脂よりなる接着層30により全面が貼り合わせられている。駆動パネル10は、例えば、ガラスなどの絶縁材料よりなる基板11の上に、TFT12および平坦化層13を介して、赤色の光を発生する有機発光素子10Rと、緑色の光を発生する有機発光素子10Gと、青色の光を発生する有機発光素子10Bとが、順に全体としてマトリクス状に設けられている。
(2L)/λ+Φ/(2π)=m
(式中、Lは第1端部P1と第2端部P2との間の光学的距離、Φは第1端部P1で生じる反射光の位相シフトΦ1 と第2端部P2で生じる反射光の位相シフトΦ2 との和(Φ=Φ1 +Φ2 )(rad)、λは第2端部P2の側から取り出したい光のスペクトルのピーク波長、mはLが正となる整数をそれぞれ表す。なお、数1においてLおよびλは単位が共通すればよいが、例えば(nm)を単位とする。)
図11は、本発明の第2の実施の形態に係る表示装置の断面構造を表すものである。この表示装置は、補助配線68が絶縁膜15の上に設けられていることを除いては、上記第1の実施の形態の表示装置と同一である。よって、同一の構成要素には同一の符号を付してその説明を省略する。
Claims (13)
- 基板上に能動素子および平坦化層を介して形成され、積層方向における厚みが100nm以上300nm以下である第1電極と、
前記第1電極と同一の材料により構成され、前記平坦化層の上に前記第1電極とは絶縁して形成された補助配線と、
前記第1電極の発光領域に対応する第1の開口部、および、前記補助配線に対応して設けられ前記補助配線の側面の少なくとも一部を露出させている第2の開口部を有する絶縁膜と、
発光層を含むと共に、前記基板上において少なくとも前記第1電極および前記補助配線を覆う有機層と、
この有機層を覆うと共に、前記補助配線の側面において前記補助配線に電気的に接続された第2電極と
を備えたことを特徴とする有機発光素子。 - 前記補助配線の積層方向における厚みは、前記有機層の積層方向における厚みよりも大きい
ことを特徴とする請求項1記載の有機発光素子。 - 前記補助配線の側面は、前記基板に対して垂直または逆テーパ状である
ことを特徴とする請求項1または2記載の有機発光素子。 - 前記補助配線は、側面に切欠きが設けられている
ことを特徴とする請求項1ないし3のいずれか1項に記載の有機発光素子。 - 前記発光層は、前記第1電極と前記第2電極との間に互いに積層して設けられた赤色発光層、緑色発光層および青色発光層を有する
ことを特徴とする請求項1ないし4のいずれか1項に記載の有機発光素子。 - 前記第2電極は、複数の層の積層構造を有する
ことを特徴とする請求項1ないし5のいずれか1項に記載の有機発光素子。 - 前記第2電極は、透明電極を含む複数の層の積層構造を有する
ことを特徴とする請求項1ないし6のいずれか1項に記載の有機発光素子。 - 前記透明電極は、インジウム酸化物(InOx),スズ酸化物(SnOx)および亜鉛酸化物(ZnOx)のうちの少なくとも1種により構成されている
ことを特徴とする請求項7記載の有機発光素子。 - 基板上に能動素子および平坦化層を形成したのち、前記平坦化層の上に、積層方向における厚みが100nm以上300nm以下である第1電極およびこの第1電極とは絶縁された補助配線を、同一の材料および同一工程で形成する工程と、
前記第1電極および前記補助配線を形成する工程の後に絶縁膜を形成し、前記絶縁膜に、前記第1電極の発光領域に対応する第1の開口部、および、前記補助配線に対応して前記補助配線の側面の少なくとも一部を露出させる第2の開口部を形成する工程と、
少なくとも前記第1電極および前記補助配線の上に、発光層を含む有機層を形成すると共に、前記補助配線の側面の段差により前記有機層を途切れさせる工程と、
前記有機層の上に第2電極を形成すると共に、前記補助配線の側面で前記第2電極と前記補助配線とを電気的に接続する工程と
を含むことを特徴とする有機発光素子の製造方法。 - 前記第2電極として、透明電極を含む複数の層の積層構造を形成する
ことを特徴とする請求項9記載の有機発光素子の製造方法。 - 前記透明電極を、スパッタリング法により形成する
ことを特徴とする請求項10記載の有機発光素子の製造方法。 - 基板に複数の有機発光素子を有する表示装置であって、
前記有機発光素子は、
基板上に能動素子および平坦化層を介して形成され、積層方向における厚みが100nm以上300nm以下である第1電極と、
前記第1電極と同一の材料により構成され、前記平坦化層の上に前記第1電極とは絶縁して形成された補助配線と、
前記第1電極の発光領域に対応する第1の開口部、および、前記補助配線に対応して設けられ前記補助配線の側面の少なくとも一部を露出させている第2の開口部を有する絶縁膜と、
発光層を含むと共に、前記基板上において少なくとも前記第1電極および前記補助配線を覆う有機層と、
この有機層を覆うと共に、前記補助配線の側面において前記補助配線に電気的に接続された第2電極と
を備えたことを特徴とする表示装置。 - 前記複数の有機発光素子の各々は前記能動素子を有し、アクティブマトリクス方式により駆動される
ことを特徴とする請求項12記載の表示装置。
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- 2004-09-09 SG SG200405469A patent/SG110169A1/en unknown
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- 2004-09-17 TW TW093128114A patent/TWI249968B/zh not_active IP Right Cessation
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Cited By (4)
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US9954194B2 (en) | 2015-02-05 | 2018-04-24 | Samsung Display Co., Ltd. | Organic light emitting diode display and manufacturing method thereof |
US9865669B2 (en) | 2015-09-16 | 2018-01-09 | Samsung Display Co., Ltd. | Organic light emitting diode display and manufacturing method thereof |
US10243033B2 (en) | 2015-09-16 | 2019-03-26 | Samsung Display Co., Ltd. | Organic light emitting diode display and manufacturing method thereof |
US10177207B2 (en) | 2016-01-13 | 2019-01-08 | Samsung Display Co., Ltd. | Organic light emitting diode display and manufacturing method thereof |
Also Published As
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TWI249968B (en) | 2006-02-21 |
US7597602B2 (en) | 2009-10-06 |
KR101086580B1 (ko) | 2011-11-23 |
US20070066178A1 (en) | 2007-03-22 |
US20050077816A1 (en) | 2005-04-14 |
US7173373B2 (en) | 2007-02-06 |
KR20050028803A (ko) | 2005-03-23 |
SG110169A1 (en) | 2005-04-28 |
JP2005093398A (ja) | 2005-04-07 |
CN100441061C (zh) | 2008-12-03 |
TW200524467A (en) | 2005-07-16 |
CN1607876A (zh) | 2005-04-20 |
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