JP5084184B2 - 有機薄膜トランジスタ、その製造方法、及びそれを備えた有機発光ディスプレイ装置 - Google Patents
有機薄膜トランジスタ、その製造方法、及びそれを備えた有機発光ディスプレイ装置Info
- Publication number
- JP5084184B2 JP5084184B2 JP2006170320A JP2006170320A JP5084184B2 JP 5084184 B2 JP5084184 B2 JP 5084184B2 JP 2006170320 A JP2006170320 A JP 2006170320A JP 2006170320 A JP2006170320 A JP 2006170320A JP 5084184 B2 JP5084184 B2 JP 5084184B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor layer
- film transistor
- electrode
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 81
- 239000010408 film Substances 0.000 claims description 16
- 230000001678 irradiating effect Effects 0.000 claims description 13
- 229910000510 noble metal Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 description 19
- 239000000758 substrate Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 9
- 239000011368 organic material Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000010329 laser etching Methods 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RDBHQZLQCUALTF-UHFFFAOYSA-N 4-(4-anilinophenyl)aniline Chemical compound C1=CC(N)=CC=C1C(C=C1)=CC=C1NC1=CC=CC=C1 RDBHQZLQCUALTF-UHFFFAOYSA-N 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- NRNFFDZCBYOZJY-UHFFFAOYSA-N p-quinodimethane Chemical class C=C1C=CC(=C)C=C1 NRNFFDZCBYOZJY-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- -1 tetracarboxylic anhydride Chemical class 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Description
121 ゲート電極、
123 ソース電極/ドレイン電極、
125 ゲート絶縁膜、
127 有機半導体層、
127a 灰化された領域、
CA チャンネル領域。
Claims (8)
- ソース電極及びドレイン電極と、
前記ソース電極及び前記ドレイン電極に各々接し、レーザビームの照射によって前記ソース電極と前記ドレイン電極との間のチャンネル領域外の領域の厚さがチャンネル領域の厚さより薄く形成された有機半導体層と、
前記ソース電極、前記ドレイン電極、及び前記有機半導体層と絶縁されたゲート電極と、
前記ゲート電極を前記ソース電極、前記ドレイン電極、及び前記有機半導体層から絶縁させるゲート絶縁膜と、を備えることを特徴とする有機薄膜トランジスタ。 - 前記有機半導体層は、前記ソース電極及び前記ドレイン電極を覆うように備えられることを特徴とする請求項1に記載の有機薄膜トランジスタ。
- 前記ソース電極及び前記ドレイン電極は、貴金属よりなることを特徴とする請求項1または2に記載の有機薄膜トランジスタ。
- 請求項1〜3のいずれか1項に記載の有機薄膜トランジスタを備えることを特徴とする有機発光ディスプレイ装置。
- ソース電極及びドレイン電極を形成するステップと、
有機半導体層を形成し、前記有機半導体層にレーザビームを照射してチャンネル領域外の領域の厚さをチャンネル領域の厚さより薄くするステップと、
ゲート電極、および前記ゲート電極を他の構成要素から絶縁させるゲート絶縁膜を形成するステップと、を備えることを特徴とする有機薄膜トランジスタの製造方法。 - 前記有機半導体層を形成するステップは、前記ソース電極及びドレイン電極を形成するステップ以後に行われることを特徴とする請求項5に記載の有機薄膜トランジスタの製造方法。
- 前記有機半導体層は、前記ソース電極及び前記ドレイン電極を覆うように形成されることを特徴とする請求項5または6に記載の有機薄膜トランジスタの製造方法。
- 前記ソース電極及び前記ドレイン電極は、貴金属より形成されることを特徴とする請求項5〜7のいずれか1項に記載の有機薄膜トランジスタの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050121955A KR100787438B1 (ko) | 2005-12-12 | 2005-12-12 | 유기 박막 트랜지스터, 이의 제조방법 및 이를 구비한 유기발광 디스플레이 장치 |
KR10-2005-0121955 | 2005-12-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007165828A JP2007165828A (ja) | 2007-06-28 |
JP5084184B2 true JP5084184B2 (ja) | 2012-11-28 |
Family
ID=37762631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006170320A Expired - Fee Related JP5084184B2 (ja) | 2005-12-12 | 2006-06-20 | 有機薄膜トランジスタ、その製造方法、及びそれを備えた有機発光ディスプレイ装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7696520B2 (ja) |
EP (1) | EP1796184B1 (ja) |
JP (1) | JP5084184B2 (ja) |
KR (1) | KR100787438B1 (ja) |
CN (2) | CN1983662B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2959867B1 (fr) | 2010-05-05 | 2013-08-16 | Commissariat Energie Atomique | Dispositif microelectronique a portions disjointes de semi-conducteur et procede de realisation d'un tel dispositif |
KR101697370B1 (ko) * | 2010-10-07 | 2017-01-17 | 서울시립대학교 산학협력단 | 종이를 기판으로 하는 유기발광 다이오드 및 그 제조방법 |
KR101820365B1 (ko) | 2011-01-07 | 2018-01-22 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그의 제조 방법 |
JP5574996B2 (ja) * | 2011-01-19 | 2014-08-20 | 三菱重工業株式会社 | エンジンシステム及びエンジンシステムの運転制御方法 |
CN105470388B (zh) | 2015-11-18 | 2018-09-28 | 深圳市华星光电技术有限公司 | 有机半导体薄膜晶体管及其制作方法 |
CN108933179B (zh) | 2018-07-05 | 2020-06-16 | 深圳市华星光电半导体显示技术有限公司 | 一种薄膜晶体管及其制作方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4951834B2 (ja) * | 2001-09-19 | 2012-06-13 | 日本電気株式会社 | 薄膜トランジスタ |
CN1144301C (zh) * | 2002-04-05 | 2004-03-31 | 中国科学院长春应用化学研究所 | 一种有机薄膜晶体管开关器件及制作方法 |
JP2004241528A (ja) * | 2003-02-05 | 2004-08-26 | Ricoh Co Ltd | 有機半導体装置及びそれを有する表示素子 |
JP2005086144A (ja) * | 2003-09-11 | 2005-03-31 | Asahi Kasei Corp | 有機導電性薄膜の形成方法、半導体装置 |
US7019328B2 (en) * | 2004-06-08 | 2006-03-28 | Palo Alto Research Center Incorporated | Printed transistors |
KR100592278B1 (ko) * | 2004-06-08 | 2006-06-21 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 구비한 평판표시장치 |
KR100592302B1 (ko) * | 2004-11-03 | 2006-06-22 | 삼성에스디아이 주식회사 | 박막 트랜지스터를 구비한 기판의 제조방법, 이에 따라제조된 박막 트랜지스터를 구비한 기판, 평판 표시장치의제조방법, 및 이에 따라 제조된 평판 표시장치 |
JP4341529B2 (ja) * | 2004-11-05 | 2009-10-07 | セイコーエプソン株式会社 | 電子デバイス、電子デバイスの製造方法および電子機器 |
KR100670255B1 (ko) * | 2004-12-23 | 2007-01-16 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이를 구비한 평판표시장치, 상기 박막트랜지스터의 제조방법, 및 상기 평판 표시장치의 제조방법 |
-
2005
- 2005-12-12 KR KR1020050121955A patent/KR100787438B1/ko not_active IP Right Cessation
-
2006
- 2006-06-20 JP JP2006170320A patent/JP5084184B2/ja not_active Expired - Fee Related
- 2006-09-22 CN CN2006101598126A patent/CN1983662B/zh not_active Expired - Fee Related
- 2006-09-22 CN CN2009102245568A patent/CN101714569B/zh not_active Expired - Fee Related
- 2006-09-26 US US11/528,022 patent/US7696520B2/en not_active Expired - Fee Related
- 2006-10-25 EP EP06255489.4A patent/EP1796184B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1796184A2 (en) | 2007-06-13 |
CN101714569B (zh) | 2012-04-04 |
US7696520B2 (en) | 2010-04-13 |
JP2007165828A (ja) | 2007-06-28 |
US20070132023A1 (en) | 2007-06-14 |
EP1796184A3 (en) | 2010-12-15 |
KR20070062184A (ko) | 2007-06-15 |
CN1983662A (zh) | 2007-06-20 |
EP1796184B1 (en) | 2013-09-04 |
CN1983662B (zh) | 2011-09-14 |
KR100787438B1 (ko) | 2007-12-26 |
CN101714569A (zh) | 2010-05-26 |
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