JP4634147B2 - 薄膜トランジスタを備えた電子装置の製造方法 - Google Patents
薄膜トランジスタを備えた電子装置の製造方法 Download PDFInfo
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- JP4634147B2 JP4634147B2 JP2004539297A JP2004539297A JP4634147B2 JP 4634147 B2 JP4634147 B2 JP 4634147B2 JP 2004539297 A JP2004539297 A JP 2004539297A JP 2004539297 A JP2004539297 A JP 2004539297A JP 4634147 B2 JP4634147 B2 JP 4634147B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 31
- 239000010409 thin film Substances 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000001257 hydrogen Substances 0.000 claims description 49
- 229910052739 hydrogen Inorganic materials 0.000 claims description 49
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 44
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 26
- 238000005984 hydrogenation reaction Methods 0.000 claims description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 15
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 26
- 229920005591 polysilicon Polymers 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 239000004020 conductor Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 11
- 229920000307 polymer substrate Polymers 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Description
これを直接加熱するパルスレーザビーム200の照射を受ける。ポリシリコン・アイランド20も熱伝導により窒化シリコンを間接的に加熱するレーザにより加熱される。これにより、水素が窒化シリコン層22から下部ポリシリコン・アイランド20内に拡散する。窒化シリコン層22上部には熱的ダメージを受けやすい介在層が無いので高レーザフルエンスを用いることができる。さらに、窒化シリコン層22がポリシリコン・アイランド20に非常に接近しているので水素の拡散する距離が短くなる。従って、ポリシリコン・アイランド20を完全に水素化するのに必要な高レーザフルエンスのレーザパルス数が比較的少なくなる。これらのパルスはポリマー基板12を溶融又は変形させるほどのものではない。
Claims (8)
- 薄膜トランジスタを備えた電子装置の製造方法であって、前記薄膜トランジスタは、ゲート電極とソース電極とドレイン電極と、ゲート絶縁層により前記ゲート電極から分離された半導体層とを備え、前記ソース電極と前記ドレイン電極との間の前記半導体層のチャネル領域を流れる電流を制御するように前記ゲート電極が配され、前記方法は、
基板上部に誘電体層を形成する誘電体層形成工程と、
前記誘電体層の直上に前記半導体層を形成する半導体層形成工程と、
前記半導体層の直上に水素含有層を形成する水素含有層形成工程と、
前記水素含有層にエネルギビームを照射して少なくとも前記半導体層の一部分を多結晶化及び水素化させる多結晶化及び水素化工程と、そして
前記多結晶化及び水素化工程が施された前記半導体層上部に前記ゲート電極、且つ又は、前記ソース電極と前記ドレイン電極とを形成する電極形成工程とを備えたことを特徴とする電子装置の製造方法。 - 前記ゲート電極が前記電極形成工程において形成され、前記ゲート絶縁層が前記水素含有層を備えることを特徴とする請求項1に記載の方法。
- 前記ゲート電極が前記電極形成工程において形成され、前記方法は、さらに、
前記水素含有層を除去する工程と、
前記電極形成工程の前に、前記半導体層上部に前記ゲート絶縁層を形成する工程とを備えたことを特徴とする請求項1に記載の方法。 - 前記ソース電極と前記ドレイン電極とが前記電極形成工程において形成され、前記方法は、さらに、前記電極形成工程の前に、前記水素含有層を除去する工程を備えたことを特徴とする請求項1に記載の方法。
- 前記水素含有層は窒化シリコンを備えたことを特徴とする請求項1乃至4いずれかに記載の方法。
- 前記半導体層はアモルファスシリコンを備えたことを特徴とする請求項1乃至5いずれかに記載の方法。
- 請求項1乃至6いずれかに記載の方法により製造された電子装置。
- 前記ゲート電極が前記電極形成工程において形成され、前記ゲート絶縁層が前記水素含有層を備え、前記半導体層がパターンニングされて半導体アイランドを形成しており、前記ゲート絶縁層が前記半導体アイランド上部の第一の領域と前記半導体アイランドの片側に沿って設けられた第二の領域とを備え、前記第一の領域の水濃度が前記第二の領域の水素濃度より低いことを特徴とする請求項1に記載の方法により製造された電子装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0222450.9A GB0222450D0 (en) | 2002-09-27 | 2002-09-27 | Method of manufacturing an electronic device comprising a thin film transistor |
PCT/IB2003/003986 WO2004030074A1 (en) | 2002-09-27 | 2003-09-12 | Method of manufacturing an electronic device comprising a thin film transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006500779A JP2006500779A (ja) | 2006-01-05 |
JP4634147B2 true JP4634147B2 (ja) | 2011-02-16 |
Family
ID=9944867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004539297A Expired - Fee Related JP4634147B2 (ja) | 2002-09-27 | 2003-09-12 | 薄膜トランジスタを備えた電子装置の製造方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7368751B2 (ja) |
EP (1) | EP1547140A1 (ja) |
JP (1) | JP4634147B2 (ja) |
KR (1) | KR101024192B1 (ja) |
CN (1) | CN100350576C (ja) |
AU (1) | AU2003259510A1 (ja) |
GB (1) | GB0222450D0 (ja) |
TW (1) | TW200419676A (ja) |
WO (1) | WO2004030074A1 (ja) |
Families Citing this family (17)
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KR100601950B1 (ko) * | 2004-04-08 | 2006-07-14 | 삼성전자주식회사 | 전자소자 및 그 제조방법 |
TWI246199B (en) | 2004-07-09 | 2005-12-21 | Au Optronics Corp | Semiconductor device and LTPS-TFT within and method of making the semiconductor device |
CN100350629C (zh) * | 2004-07-14 | 2007-11-21 | 友达光电股份有限公司 | 半导体元件与其中的多晶硅薄膜晶体管及其制造方法 |
TWI312545B (en) * | 2004-10-22 | 2009-07-21 | Ind Tech Res Inst | Method of enhancing laser crystallization for poly-silicon fabrication |
KR100646937B1 (ko) * | 2005-08-22 | 2006-11-23 | 삼성에스디아이 주식회사 | 다결정 실리콘 박막트랜지스터 및 그 제조방법 |
KR20070071968A (ko) * | 2005-12-30 | 2007-07-04 | 삼성전자주식회사 | 다결정 실리콘 필름 제조방법 및 이를 적용한 박막트랜지스터의 제조방법 |
US9048180B2 (en) * | 2006-05-16 | 2015-06-02 | Texas Instruments Incorporated | Low stress sacrificial cap layer |
JP5361249B2 (ja) * | 2007-05-31 | 2013-12-04 | キヤノン株式会社 | 酸化物半導体を用いた薄膜トランジスタの製造方法 |
US8586189B2 (en) * | 2007-09-19 | 2013-11-19 | Fujifilm Corporation | Gas-barrier film and organic device comprising same |
KR101406889B1 (ko) | 2007-12-24 | 2014-06-13 | 삼성디스플레이 주식회사 | 박막트랜지스터 및 그의 제조 방법 |
JP5305696B2 (ja) * | 2008-03-06 | 2013-10-02 | キヤノン株式会社 | 半導体素子の処理方法 |
WO2011052413A1 (en) * | 2009-10-30 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Non-linear element, display device, and electronic device |
TWI422035B (zh) * | 2009-12-22 | 2014-01-01 | Au Optronics Corp | 半導體元件結構及其製造方法 |
CN103985637B (zh) | 2014-04-30 | 2017-02-01 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜晶体管及其制作方法和显示装置 |
JP6537341B2 (ja) * | 2014-05-07 | 2019-07-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN105655353A (zh) * | 2016-01-21 | 2016-06-08 | 武汉华星光电技术有限公司 | Tft阵列基板结构及其制作方法 |
CN107195636B (zh) * | 2017-05-12 | 2020-08-18 | 惠科股份有限公司 | 显示面板、显示面板的制程和显示装置 |
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-
2002
- 2002-09-27 GB GBGB0222450.9A patent/GB0222450D0/en not_active Ceased
-
2003
- 2003-09-12 AU AU2003259510A patent/AU2003259510A1/en not_active Abandoned
- 2003-09-12 JP JP2004539297A patent/JP4634147B2/ja not_active Expired - Fee Related
- 2003-09-12 CN CNB038229331A patent/CN100350576C/zh not_active Expired - Fee Related
- 2003-09-12 EP EP03798277A patent/EP1547140A1/en not_active Withdrawn
- 2003-09-12 KR KR1020057005165A patent/KR101024192B1/ko not_active IP Right Cessation
- 2003-09-12 US US10/529,117 patent/US7368751B2/en not_active Expired - Fee Related
- 2003-09-12 WO PCT/IB2003/003986 patent/WO2004030074A1/en active Application Filing
- 2003-09-24 TW TW092126330A patent/TW200419676A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20050282316A1 (en) | 2005-12-22 |
CN100350576C (zh) | 2007-11-21 |
TW200419676A (en) | 2004-10-01 |
WO2004030074A1 (en) | 2004-04-08 |
US7368751B2 (en) | 2008-05-06 |
AU2003259510A1 (en) | 2004-04-19 |
JP2006500779A (ja) | 2006-01-05 |
KR101024192B1 (ko) | 2011-03-22 |
CN1685488A (zh) | 2005-10-19 |
GB0222450D0 (en) | 2002-11-06 |
EP1547140A1 (en) | 2005-06-29 |
KR20050056217A (ko) | 2005-06-14 |
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