JP4630103B2 - 近接ヘッドを用いたウエハ乾燥中の周囲環境の制御 - Google Patents
近接ヘッドを用いたウエハ乾燥中の周囲環境の制御 Download PDFInfo
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- JP4630103B2 JP4630103B2 JP2005100376A JP2005100376A JP4630103B2 JP 4630103 B2 JP4630103 B2 JP 4630103B2 JP 2005100376 A JP2005100376 A JP 2005100376A JP 2005100376 A JP2005100376 A JP 2005100376A JP 4630103 B2 JP4630103 B2 JP 4630103B2
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- 239000012530 fluid Substances 0.000 claims abstract description 159
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 230000005499 meniscus Effects 0.000 claims abstract description 65
- 238000001704 evaporation Methods 0.000 claims abstract description 47
- 230000008020 evaporation Effects 0.000 claims abstract description 46
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 144
- 239000007789 gas Substances 0.000 claims description 60
- 239000007788 liquid Substances 0.000 claims description 48
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 42
- 238000003672 processing method Methods 0.000 claims description 23
- 230000007613 environmental effect Effects 0.000 claims description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 3
- 150000002576 ketones Chemical class 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 37
- 230000008569 process Effects 0.000 abstract description 22
- 235000012431 wafers Nutrition 0.000 description 287
- 238000004140 cleaning Methods 0.000 description 28
- 238000010586 diagram Methods 0.000 description 15
- 239000008367 deionised water Substances 0.000 description 13
- 229910021641 deionized water Inorganic materials 0.000 description 13
- 230000002209 hydrophobic effect Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000011109 contamination Methods 0.000 description 7
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- 238000006467 substitution reaction Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
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- 230000004075 alteration Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004320 controlled atmosphere Methods 0.000 description 2
- 238000010981 drying operation Methods 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000012625 in-situ measurement Methods 0.000 description 2
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- 238000003032 molecular docking Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
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- 239000002245 particle Substances 0.000 description 2
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- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
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- 230000009897 systematic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
Description
Claims (24)
- 基板処理方法であって、
前記基板を処理するための流体メニスカスを生成する工程と、
前記基板の表面に前記流体メニスカスを作用させる工程と、
前記基板処理の環境における表面からの流体の蒸発を低減する工程と、を備え、
前記流体の蒸発を低減する工程は、基板処理環境を管理する工程を含み、
前記基板処理環境を管理する工程は、前記基板処理環境内に気体を投入して、前記基板処理環境内の流体の蒸発速度を低減する工程を備える、基板処理方法。 - 請求項1に記載の基板処理方法であって、
前記気体は、高い相対湿度を有する、基板処理方法。 - 請求項2に記載の基板処理方法であって、
前記高い相対湿度を有する前記気体は、液体槽に気体を送り込み、前記液体槽を通って気泡を形成する蒸気を捕らえることによって生成される、基板処理方法。 - 請求項2に記載の基板処理方法であって、
前記高い相対湿度を有する前記気体は、約50%から約100%の間の相対湿度を有する、基板処理方法。 - 請求項2に記載の基板処理方法であって、
前記高い相対湿度を有する前記気体は、約90%から約100%の間の相対湿度を有する、基板処理方法。 - 請求項2に記載の基板処理方法であって、
前記高い相対湿度を有する前記気体は、約100%の相対湿度を有する、基板処理方法。 - 請求項1に記載の基板処理方法であって、
前記基板処理環境を管理する工程は、さらに、前記基板表面上の流体の厚さを検出する工程を備える、基板処理方法。 - 請求項1に記載の基板処理方法であって、
前記気体は、特定の液体の水中濃度を維持する、基板処理方法。 - 請求項8に記載の基板処理方法であって、
前記特定の液体は、アルコール、アセトン、および共沸混合物の内のいずれかである、基板処理方法。 - 請求項8に記載の基板処理方法であって、
前記特定の液体はイソプロピルアルコール(IPA)である、基板処理方法。 - 請求項8に記載の基板処理方法であって、
前記特定の液体の水中濃度を維持する前記気体は、イソプロピルアルコール(IPA)を蒸気の状態で含むN2搬送ガスである、基板処理方法。 - 基板処理装置であって、
基板表面を処理するための流体メニスカスを生成できる近接ヘッドと、
前記近接ヘッドを収容すると共に、環境制御気体を供給されるよう構成されたチャンバと、を備え、
前記環境制御気体は、前記近接ヘッドの表面からの流体の蒸発速度を低減する、基板処理装置。 - 請求項12に記載の基板処理装置であって、さらに、
前記環境制御気体を生成するよう構成されたウエハ処理環境生成部を備える、基板処理装置。 - 請求項12に記載の基板処理装置であって、
前記ウエハ処理環境生成部は気泡生成部である、基板処理装置。 - 請求項14に記載の基板処理装置であって、
前記気泡生成部は、液体槽に気体を投入すると共に前記液体槽を通過した前記気体を捕らえるよう構成されている、基板処理装置。 - 請求項12に記載の基板処理装置であって、
前記環境制御気体は、高い相対湿度を有する気体である、基板処理装置。 - 請求項12に記載の基板処理装置であって、
前記環境制御気体は、特定の液体の水中濃度を維持する、基板処理装置。 - 請求項17に記載の基板処理装置であって、
前記特定の液体は、イソプロピルアルコール、DIWおよびIPA、アルコール、DIWおよびアルコール、ケトン、およびエーテルの内のいずれかである、基板処理装置。 - 基板処理装置であって、
基板表面を処理するための流体メニスカスを生成できる近接ヘッドと、
前記近接ヘッドの表面に配置され、前記近接ヘッドの前縁側に位置する領域に環境制御気体を供給するよう構成された開口部と、を備え、
前記環境制御気体は、前記近接ヘッドの表面からの流体の蒸発速度を低減する、基板処理装置。 - 請求項19に記載の基板処理装置であって、
前記環境制御気体は、高い相対湿度を有する気体である、基板処理装置。 - 請求項19に記載の基板処理装置であって、
高い相対湿度を有する前記気体は、約50%から約100%の間の相対湿度を有する、基板処理装置。 - 請求項20に記載の基板処理装置であって、
前記高い相対湿度を有する前記気体は、約90%から約100%の間の相対湿度を有する、基板処理装置。 - 請求項20に記載の基板処理装置であって、
前記高い相対湿度を有する前記気体は、約100%の相対湿度を有する、基板処理装置。 - 請求項19に記載の基板処理装置であって、
前記環境制御気体は、特定の液体の水中濃度を維持する、基板処理装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/817,398 US7614411B2 (en) | 2002-09-30 | 2004-04-01 | Controls of ambient environment during wafer drying using proximity head |
Publications (3)
Publication Number | Publication Date |
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JP2005311354A JP2005311354A (ja) | 2005-11-04 |
JP2005311354A5 JP2005311354A5 (ja) | 2008-05-15 |
JP4630103B2 true JP4630103B2 (ja) | 2011-02-09 |
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JP2005100376A Expired - Fee Related JP4630103B2 (ja) | 2004-04-01 | 2005-03-31 | 近接ヘッドを用いたウエハ乾燥中の周囲環境の制御 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7614411B2 (ja) |
EP (1) | EP1583136B1 (ja) |
JP (1) | JP4630103B2 (ja) |
KR (1) | KR101147944B1 (ja) |
CN (1) | CN100452308C (ja) |
AT (1) | ATE467230T1 (ja) |
DE (1) | DE602005021010D1 (ja) |
MY (1) | MY143956A (ja) |
SG (2) | SG115836A1 (ja) |
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JP6489524B2 (ja) * | 2015-08-18 | 2019-03-27 | 株式会社Screenホールディングス | 基板処理装置 |
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JP7017343B2 (ja) * | 2017-08-31 | 2022-02-08 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
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US7614411B2 (en) | 2009-11-10 |
SG115836A1 (en) | 2005-10-28 |
DE602005021010D1 (de) | 2010-06-17 |
EP1583136A1 (en) | 2005-10-05 |
EP1583136B1 (en) | 2010-05-05 |
JP2005311354A (ja) | 2005-11-04 |
CN100452308C (zh) | 2009-01-14 |
US20050145267A1 (en) | 2005-07-07 |
ATE467230T1 (de) | 2010-05-15 |
MY143956A (en) | 2011-07-29 |
SG136145A1 (en) | 2007-10-29 |
KR101147944B1 (ko) | 2012-05-24 |
KR20060045439A (ko) | 2006-05-17 |
CN1707758A (zh) | 2005-12-14 |
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