JP4473240B2 - Cmosイメージセンサの製造方法 - Google Patents
Cmosイメージセンサの製造方法 Download PDFInfo
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- JP4473240B2 JP4473240B2 JP2006194017A JP2006194017A JP4473240B2 JP 4473240 B2 JP4473240 B2 JP 4473240B2 JP 2006194017 A JP2006194017 A JP 2006194017A JP 2006194017 A JP2006194017 A JP 2006194017A JP 4473240 B2 JP4473240 B2 JP 4473240B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 238000000034 method Methods 0.000 claims description 70
- 238000009792 diffusion process Methods 0.000 claims description 65
- 239000010410 layer Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 43
- 239000012535 impurity Substances 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 21
- 150000004767 nitrides Chemical class 0.000 claims description 20
- 238000002955 isolation Methods 0.000 claims description 18
- 229910021332 silicide Inorganic materials 0.000 claims description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 13
- 239000011229 interlayer Substances 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 9
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical class CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 150000004756 silanes Chemical class 0.000 claims description 2
- 238000000638 solvent extraction Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
Claims (12)
- 半導体基板上に、フォトダイオードを形成する第1の領域とトランジスタを形成する第2の領域とを有するアクティブ領域を区画する素子分離膜を形成する段階と、
前記素子分離膜が形成されると、前記第2の領域に、ゲート絶縁膜を介在させてゲート電極を形成する段階と、
前記ゲート電極が形成されると、前記第1の領域に第1の低濃度の拡散領域を形成する段階と、
前記第1の低濃度拡散領域が形成されると、前記第2の領域に第2の低濃度の拡散領域を形成する段階と、
前記第2の低濃度拡散領域が形成されると、前記半導体基板の全面に、ギャザリング層となるバッファ層を形成し、そのバッファ層が前記第1の領域にのみ残されるように選択的に除去する段階と、
前記バッファ層が選択的に除去されると、前記半導体基板の全面にエッチング選択比が異なる第1の絶縁膜と第2の絶縁膜を順に形成する段階と、
前記第2の絶縁膜が形成されると、前記第2の絶縁膜を選択的にエッチングし、前記ゲート電極の両側面に第2の絶縁膜による側壁を形成する段階と、
前記側壁が形成されると、前記第2の低濃度拡散領域に形成された前記第1の絶縁膜を選択的に除去する段階と、
前記第1の絶縁膜が選択的に除去されると、前記露出された第2の領域において前記第2の低濃度の拡散領域と部分的に重畳するように高濃度の拡散領域を形成する段階と、
前記高度濃度拡散領域が形成されると、前記半導体基板に熱処理工程を行い、前記バッファ層を不純物に対する前記ギャザリング層として使って、前記第1の低濃度の拡散領域、前記第2の低濃度の拡散領域および前記高濃度の拡散領域内のそれぞれの不純物イオンを拡散させる段階と、
前記熱処理工程が行われると、前記高濃度の拡散領域の表面に金属シリサイド膜を形成する段階と、を備えることを特徴とするCMOSイメージセンサの製造方法。 - 前記第1の絶縁膜は、酸化膜で形成することを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記第2の絶縁膜は、窒化膜で形成することを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記酸化膜は、熱酸化膜またはTEOS系列の酸化膜で形成することを特徴とする請求項2に記載のCMOSイメージセンサの製造方法。
- 前記バッファ層は、O3−TEOS膜またはBPSG膜で形成することを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記バッファ層は、400Å〜3000Åの厚さで形成することを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記バッファ層の選択的除去は、シランガスを利用することを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記第1及び第2の低濃度の拡散領域が形成された後、前記高濃度の拡散領域が形成される前に、前記半導体基板に熱処理工程を行い、前記バッファ層を不純物に対する前記ギャザリング層として使って、前記第1の低濃度の拡散領域および前記第2の低濃度の拡散領域内のそれぞれの不純物イオンを拡散させる段階をさらに備えることを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記熱処理工程は、800℃〜1200℃の温度で実施することを特徴とする請求項1又は8に記載のCMOSイメージセンサの製造方法。
- 前記金属シリサイド膜を形成した後、前記半導体基板の全面に窒化膜を形成する段階と、
前記第1の領域の上部に形成された前記窒化膜の一部を選択的に除去する段階と、をさらに備えることを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。 - 前記残留する窒化膜を含む前記半導体基板の全面に層間絶縁膜を形成する段階をさらに備えることを特徴とする請求項10に記載のCMOSイメージセンサの製造方法。
- 前記層間絶縁膜は、シラン系列の絶縁膜で形成することを特徴とする請求項11に記載のCMOSイメージセンサの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050063732A KR100672729B1 (ko) | 2005-07-14 | 2005-07-14 | 씨모스 이미지 센서의 제조방법 |
Publications (2)
Publication Number | Publication Date |
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JP2007027748A JP2007027748A (ja) | 2007-02-01 |
JP4473240B2 true JP4473240B2 (ja) | 2010-06-02 |
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JP2006194017A Active JP4473240B2 (ja) | 2005-07-14 | 2006-07-14 | Cmosイメージセンサの製造方法 |
Country Status (5)
Country | Link |
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US (2) | US7544530B2 (ja) |
JP (1) | JP4473240B2 (ja) |
KR (1) | KR100672729B1 (ja) |
CN (1) | CN100452352C (ja) |
DE (1) | DE102006032459B4 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100731064B1 (ko) * | 2005-12-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
KR100772316B1 (ko) * | 2006-04-28 | 2007-10-31 | 매그나칩 반도체 유한회사 | 플라즈마손상으로부터 포토다이오드를 보호하는 씨모스이미지센서의 제조 방법 |
KR100836507B1 (ko) * | 2006-12-27 | 2008-06-09 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
KR100881016B1 (ko) * | 2007-06-25 | 2009-01-30 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
KR101275798B1 (ko) | 2007-07-13 | 2013-06-18 | 삼성전자주식회사 | Cmos 이미지 소자 및 그 제조방법 |
JP5095287B2 (ja) * | 2007-07-18 | 2012-12-12 | パナソニック株式会社 | 固体撮像素子及びその製造方法 |
KR100988778B1 (ko) * | 2007-12-31 | 2010-10-20 | 주식회사 동부하이텍 | 씨모스 이미지 센서, 그 제조 방법 |
US7800147B2 (en) * | 2008-03-27 | 2010-09-21 | International Business Machines Corporation | CMOS image sensor with reduced dark current |
JP5374980B2 (ja) * | 2008-09-10 | 2013-12-25 | ソニー株式会社 | 固体撮像装置 |
EP3514831B1 (en) | 2009-12-26 | 2021-10-13 | Canon Kabushiki Kaisha | Solid-state image pickup apparatus and image pickup system |
US9349768B2 (en) * | 2014-03-28 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor with epitaxial passivation layer |
JP6892221B2 (ja) * | 2016-03-04 | 2021-06-23 | エイブリック株式会社 | 半導体装置の製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3706278A1 (de) * | 1986-02-28 | 1987-09-03 | Canon Kk | Halbleitervorrichtung und herstellungsverfahren hierfuer |
JP3103064B2 (ja) * | 1998-04-23 | 2000-10-23 | 松下電子工業株式会社 | 固体撮像装置およびその製造方法 |
US6130422A (en) * | 1998-06-29 | 2000-10-10 | Intel Corporation | Embedded dielectric film for quantum efficiency enhancement in a CMOS imaging device |
US6228674B1 (en) * | 1998-12-08 | 2001-05-08 | United Microelectronics Corp. | CMOS sensor and method of manufacture |
US6339248B1 (en) * | 1999-11-15 | 2002-01-15 | Omnivision Technologies, Inc. | Optimized floating P+ region photodiode for a CMOS image sensor |
US6504194B1 (en) * | 1999-12-01 | 2003-01-07 | Innotech Corporation | Solid state imaging device, method of manufacturing the same, and solid state imaging system |
US6507059B2 (en) * | 2001-06-19 | 2003-01-14 | United Microelectronics Corp. | Structure of a CMOS image sensor |
CN1217416C (zh) * | 2001-07-06 | 2005-08-31 | 联华电子股份有限公司 | 互补式金氧半图像感测器及其制造方法 |
US6462365B1 (en) * | 2001-11-06 | 2002-10-08 | Omnivision Technologies, Inc. | Active pixel having reduced dark current in a CMOS image sensor |
JP3795843B2 (ja) * | 2002-08-01 | 2006-07-12 | 富士通株式会社 | 半導体受光装置 |
US6974715B2 (en) * | 2002-12-27 | 2005-12-13 | Hynix Semiconductor Inc. | Method for manufacturing CMOS image sensor using spacer etching barrier film |
EP1465258A1 (en) * | 2003-02-21 | 2004-10-06 | STMicroelectronics Limited | CMOS image sensors |
US6897082B2 (en) * | 2003-06-16 | 2005-05-24 | Micron Technology, Inc. | Method of forming well for CMOS imager |
US7148528B2 (en) * | 2003-07-02 | 2006-12-12 | Micron Technology, Inc. | Pinned photodiode structure and method of formation |
US7196314B2 (en) * | 2004-11-09 | 2007-03-27 | Omnivision Technologies, Inc. | Image sensor and pixel having an anti-reflective coating over the photodiode |
KR100698090B1 (ko) * | 2005-06-07 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR100720503B1 (ko) * | 2005-06-07 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR100720474B1 (ko) * | 2005-06-17 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR100781905B1 (ko) * | 2006-10-25 | 2007-12-04 | 한국전자통신연구원 | 헤테로 정션 바이폴라 트랜지스터를 포함하는 이미지 센서및 그 제조 방법 |
KR100782312B1 (ko) * | 2006-10-25 | 2007-12-06 | 한국전자통신연구원 | 고화질 cmos 이미지 센서 및 포토 다이오드 |
KR100836507B1 (ko) * | 2006-12-27 | 2008-06-09 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
KR101425619B1 (ko) * | 2008-01-16 | 2014-08-04 | 삼성전자주식회사 | 기판 표면 처리 방법, 이를 이용한 이미지 센서의 제조방법 및 이에 따라 제조된 이미지 센서 |
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2005
- 2005-07-14 KR KR1020050063732A patent/KR100672729B1/ko active IP Right Grant
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2006
- 2006-07-13 US US11/486,456 patent/US7544530B2/en active Active
- 2006-07-13 DE DE102006032459A patent/DE102006032459B4/de not_active Expired - Fee Related
- 2006-07-14 CN CNB2006100987964A patent/CN100452352C/zh not_active Expired - Fee Related
- 2006-07-14 JP JP2006194017A patent/JP4473240B2/ja active Active
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2009
- 2009-05-07 US US12/437,373 patent/US7994554B2/en active Active
Also Published As
Publication number | Publication date |
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DE102006032459A1 (de) | 2007-02-01 |
CN1897254A (zh) | 2007-01-17 |
JP2007027748A (ja) | 2007-02-01 |
US20070012963A1 (en) | 2007-01-18 |
KR100672729B1 (ko) | 2007-01-24 |
KR20070009825A (ko) | 2007-01-19 |
US20090224298A1 (en) | 2009-09-10 |
DE102006032459B4 (de) | 2009-11-26 |
CN100452352C (zh) | 2009-01-14 |
US7544530B2 (en) | 2009-06-09 |
US7994554B2 (en) | 2011-08-09 |
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