JP2006191095A - Cmosイメージセンサとその製造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 230000008569 process Effects 0.000 title description 36
- 239000012535 impurity Substances 0.000 claims abstract description 63
- 238000012546 transfer Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 238000005468 ion implantation Methods 0.000 claims description 14
- 125000006850 spacer group Chemical group 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 11
- 238000002955 isolation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
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Abstract
【解決手段】本発明に係るCMOSイメージセンサは、フォトダイオード領域とトランジスタ領域とが区画される第1導電型半導体基板と、トランジスタ領域のうち、トランスファトランジスタ領域の第1導電型半導体基板に形成されるトレンチと、トレンチの内部に形成されるトランスファトランジスタのゲート電極と、フォトダイオード領域の半導体基板内に形成される第2導電型不純物領域と、第2導電型不純物領域の表面に形成される第1導電型不純物領域とを含む。
【選択図】図4M
Description
トレンチが埋め込まれるように基板に酸化膜を形成し、化学機械研磨(CMP)工程でトレンチ領域にのみ残るようにパターニングして、素子分離領域に素子分離膜33を形成する。
即ち、感光膜43パターンは、素子分離膜33に隣接したアクティブ領域の一部をカバーするとともに、フォトダイオード領域のほかにトランスファトランジスタのゲート電極40aの一部を露出させるように形成する。そして、高エネルギーイオン注入工程でN型不純物イオンを露出したフォトダイオード領域のエピタキシャル層32に注入して、フォトダイオードN型不純物領域44を形成する。
Claims (11)
- フォトダイオード領域とトランジスタ領域とが区画される第1導電型半導体基板と、
前記第1導電型半導体基板のトランジスタ領域中のトランスファトランジスタの領域に形成されるトレンチと、
前記トレンチの内部に形成される前記トランスファトランジスタのゲート電極と、
前記フォトダイオード領域の半導体基板内に形成される第2導電型不純物領域と、
前記第2導電型不純物領域の表面に形成される第1導電型不純物領域と
を含むことを特徴とするCMOSイメージセンサ。 - 前記トランスファトランジスタ領域を除いた他のトランジスタ領域の前記半導体基板上に形成される複数のゲート電極と、
前記各ゲート電極の間の前記半導体基板に形成されるソース/ドレイン不純物領域と
を更に含むことを特徴とする請求項1に記載のCMOSイメージセンサ。 - 前記各トランジスタのゲート電極の下側の前記半導体基板に形成される閾値電圧調節用の不純物イオン注入領域を更に含むことを特徴とする請求項2に記載のCMOSイメージセンサ。
- 前記各ゲート電極の側壁に形成されるスペーサを更に含むことを特徴とする請求項1に記載のCMOSイメージセンサ。
- 第1導電型不純物領域は、前記スペーサの下部領域まで拡張されて形成されていることを特徴とする請求項4に記載のCMOSイメージセンサ。
- フォトダイオード領域とトランジスタ領域とが区画される第1導電型半導体基板の全面に第1絶縁膜を形成し、トランジスタ領域のうちトランスファトランジスタ形成領域上の前記第1絶縁膜を選択的に除去する段階と、
前記第1絶縁膜が除去された部分の前記半導体基板にトレンチを形成する段階と、
前記トレンチの下部領域に前記トランスファトランジスタの閾値電圧調節用の不純物イオン注入領域を形成する段階と、
前記トレンチ内にゲート絶縁膜と前記トランスファトランジスタのゲート電極を形成する段階と
を含むことを特徴とするCMOSイメージセンサの製造方法。 - 前記閾値電圧調節用の不純物イオン注入領域を形成する段階の前に、前記トレンチの内壁に酸化膜を形成する段階を更に含み、前記ゲート絶縁膜を形成する段階の前に、前記酸化膜を除去する段階を更に含むことを特徴とする請求項6に記載のCMOSイメージセンサの製造方法。
- 前記半導体基板の全面に第2絶縁膜を堆積し、前記トランスファトランジスタを除いたトランジスタ形成領域上の前記第1と第2絶縁膜を除去する段階と、
前記第1と第2絶縁膜が除去された前記半導体基板上に複数のゲート絶縁膜と複数のゲート電極を形成する段階と、
前記第1と第2絶縁膜を全て除去する段階と
を更に含むことを特徴とする請求項6に記載のCMOSイメージセンサの製造方法。 - 前記第1絶縁膜を形成する段階の前に、前記トランスファトランジスタ領域を除いた前記トランジスタ領域の前記第1導電型半導体基板に閾値電圧調節用の不純物イオン注入領域を形成する段階を更に含むことを特徴とする請求項8に記載のCMOSイメージセンサの製造方法。
- 前記各ゲート電極の側壁にスペーサを形成する段階を更に含むことを特徴とする請求項8に記載のCMOSイメージセンサの製造方法。
- 前記フォトダイオード領域の前記半導体基板内に第2導電型不純物領域を形成する段階と、
前記第2導電型不純物領域の表面に第1導電型不純物領域を形成する段階と、
前記ゲート電極の間の前記半導体基板にソース/ドレイン不純物領域を形成する段階と、
を更に含むことを特徴とする請求項8に記載のCMOSイメージセンサの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020040114785A KR100672669B1 (ko) | 2004-12-29 | 2004-12-29 | Cmos 이미지 센서 및 그의 제조 방법 |
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JP2006191095A true JP2006191095A (ja) | 2006-07-20 |
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JP2005378014A Pending JP2006191095A (ja) | 2004-12-29 | 2005-12-28 | Cmosイメージセンサとその製造方法 |
Country Status (4)
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US (1) | US7405437B2 (ja) |
JP (1) | JP2006191095A (ja) |
KR (1) | KR100672669B1 (ja) |
CN (1) | CN100438057C (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007027686A (ja) * | 2005-07-11 | 2007-02-01 | Magnachip Semiconductor Ltd | イメージセンサ及びその製造方法 |
WO2024111280A1 (ja) * | 2022-11-25 | 2024-05-30 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置および電子機器 |
Families Citing this family (21)
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KR100672701B1 (ko) * | 2004-12-29 | 2007-01-22 | 동부일렉트로닉스 주식회사 | 씨모스(cmos) 이미지 센서 및 그의 제조 방법 |
KR100731095B1 (ko) * | 2005-12-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지센서의 제조방법 |
KR100815941B1 (ko) * | 2006-11-27 | 2008-03-21 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 형성 방법 |
KR100810423B1 (ko) * | 2006-12-27 | 2008-03-04 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 이미지 센서의 제조 방법 |
KR100884976B1 (ko) * | 2006-12-29 | 2009-02-23 | 동부일렉트로닉스 주식회사 | 이미지 센서의 제조 방법 |
KR100869744B1 (ko) * | 2006-12-29 | 2008-11-21 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR100824629B1 (ko) * | 2006-12-29 | 2008-04-25 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
US7768047B2 (en) * | 2007-05-10 | 2010-08-03 | Micron Technology, Inc. | Imager element, device and system with recessed transfer gate |
US8658956B2 (en) * | 2009-10-20 | 2014-02-25 | Omnivision Technologies, Inc. | Trench transfer gate for increased pixel fill factor |
US8872953B2 (en) * | 2009-10-30 | 2014-10-28 | Sony Corporation | Solid-state imaging device, manufacturing method thereof, camera, and electronic device |
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JP5537523B2 (ja) * | 2011-09-22 | 2014-07-02 | 株式会社東芝 | 固体撮像装置 |
KR101967835B1 (ko) | 2012-05-31 | 2019-04-10 | 삼성전자주식회사 | 이미지 센서의 단위 픽셀 및 이를 포함하는 픽셀 어레이 |
US20140104942A1 (en) * | 2012-10-12 | 2014-04-17 | Samsung Electronics Co., Ltd. | Recess gate transistors and devices including the same |
KR102087233B1 (ko) | 2013-01-17 | 2020-03-10 | 삼성전자주식회사 | 수직 구조 전송 게이트 전극을 갖는 시모스 이미지 센서 및 제조방법 |
KR102087112B1 (ko) | 2013-04-23 | 2020-03-10 | 삼성전자 주식회사 | 이미지 센서 |
KR102255183B1 (ko) | 2014-02-21 | 2021-05-24 | 삼성전자주식회사 | 수직형 트랜지스터를 갖는 씨모스 이미지 센서 및 그 제조 방법 |
KR102209097B1 (ko) | 2014-02-27 | 2021-01-28 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
CN107046044B (zh) * | 2016-12-30 | 2020-03-31 | 上海集成电路研发中心有限公司 | 一种图像传感器像素单元及其制造方法 |
CN108281450A (zh) * | 2018-01-30 | 2018-07-13 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
US20220059582A1 (en) * | 2020-08-20 | 2022-02-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and methods for effective impurity gettering |
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KR100381026B1 (ko) * | 2001-05-22 | 2003-04-23 | 주식회사 하이닉스반도체 | 펀치전압과 포토다이오드의 집전양을 증가시킬 수 있는씨모스 이미지 센서 및 그 제조 방법 |
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-
2004
- 2004-12-29 KR KR1020040114785A patent/KR100672669B1/ko not_active IP Right Cessation
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2005
- 2005-12-27 CN CNB2005101351561A patent/CN100438057C/zh not_active Expired - Fee Related
- 2005-12-28 JP JP2005378014A patent/JP2006191095A/ja active Pending
- 2005-12-28 US US11/318,577 patent/US7405437B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007027686A (ja) * | 2005-07-11 | 2007-02-01 | Magnachip Semiconductor Ltd | イメージセンサ及びその製造方法 |
WO2024111280A1 (ja) * | 2022-11-25 | 2024-05-30 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置および電子機器 |
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Publication number | Publication date |
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US20060138493A1 (en) | 2006-06-29 |
US7405437B2 (en) | 2008-07-29 |
KR20060076390A (ko) | 2006-07-04 |
KR100672669B1 (ko) | 2007-01-24 |
CN1819237A (zh) | 2006-08-16 |
CN100438057C (zh) | 2008-11-26 |
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