JP4413884B2 - 交流発光装置及びその製造方法 - Google Patents
交流発光装置及びその製造方法 Download PDFInfo
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- JP4413884B2 JP4413884B2 JP2006129663A JP2006129663A JP4413884B2 JP 4413884 B2 JP4413884 B2 JP 4413884B2 JP 2006129663 A JP2006129663 A JP 2006129663A JP 2006129663 A JP2006129663 A JP 2006129663A JP 4413884 B2 JP4413884 B2 JP 4413884B2
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- light
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- emitting device
- light emitting
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- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000010410 layer Substances 0.000 claims description 210
- 239000002245 particle Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 25
- 239000011241 protective layer Substances 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 14
- 239000013078 crystal Substances 0.000 description 11
- 239000002356 single layer Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000003086 colorant Substances 0.000 description 8
- 230000009471 action Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000013081 microcrystal Substances 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Devices (AREA)
Description
本発明では、チップに適用される交流発光装置が提供されており、この交流発光装置は、印加された交流電力(AC power)によって使用者が利用できるための単色光源や白色光源または非単色光源を生成する。この単色光源または非単色光源は、常時発光するようにチップの出光面に表現されている。ここで、前記交流電力は、各国の電気基準によれば、その好ましい電圧は、110V(ボルト)または220Vであり、好ましい周波数は、60Hz(ヘルツ)または50Hzである。
2 交流微小結晶粒子発光モジュール
20、20a、20b、20c、20d 微小結晶粒子
200、200a、200b、200c、200d 上部能動層
201、201a、201b、201c、201d 下部能動層
202a、202b、203a、203b、204a、204b、205a、205b オーミック電極
3 導電構造
30a、30b、30c 導体
4、9 開口
5、10 保護層
6a、6b、6c、6d、6e、6f、6g、6h 導電端子
70 第1の能動層
71 第2の能動層
72 連結層
8 第2の基材
L1 第1の層
L2 第2の層
L3 第3の層
C1 第1の回路
C2 第2の回路
C3 第3の回路
C30、C31、C32、C33、C34 発光回路
C4 第4の回路
C5 第5の回路
B1 ブリッジ発光ユニット
E1、E2、E3、E4 導電電極
F1、F2 単層発光色が赤色である構造及び単層発光色が緑色である構造
P1、P2 電気接続パッド
Claims (7)
- 基材と、
前記基材に形成され、少なくとも2つの微小結晶粒子を有し、当該微小結晶粒子のそれぞれが少なくとも2層の能動層を有する交流微小結晶粒子発光モジュールと、
各微小結晶粒子のそれぞれに電気的に接続されることにより、各微小結晶粒子の各能動層が交流電力の正負半波に応じて交互に発光する導電構造と、
を備えることを特徴とする交流発光装置。 - 各微小結晶粒子の同一層の能動層は、交流電力の正負波に応じて交互に発光することを特徴とする請求項1に記載の交流発光装置。
- 各微小結晶粒子の異なる層の能動層は、交流電力の正負波に応じて交互に発光することを特徴とする請求項1に記載の交流発光装置。
- 基材を準備する工程と、
前記基材に少なくとも2層の能動層を形成する工程と、
前記能動層に前記基材が露出される開口を複数形成する工程と、
前記能動層の外周に保護層を被覆する工程と、
複数の導電端子を形成し前記保護層を貫通して、前記能動層と電気的に接続する工程と、
前記開口に複数の導電構造が形成され、能動層のそれぞれに電気的に接続され、能動層のそれぞれが交流電力の印加後に、前記交流電力の正負半波に応じて交互に発光する工程と、
を備えることを特徴とする交流発光装置の製造方法。 - 前記微小結晶粒子の能動層は異なる波長の光を発光することを特徴とする請求項1に記載の交流発光装置。
- 前記2層の能動層の間にさらに連結層を有することを特徴とする請求項1に記載の交流発光装置。
- 導電端子は蒸着技術によって形成され、基材上の能動層はエピタキシャル技術によって形成されることを特徴とする請求項4に記載の交流発光装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW94115514 | 2005-05-13 | ||
TW095109419A TW200640045A (en) | 2005-05-13 | 2006-03-20 | Alternating current light-emitting device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009207007A Division JP2009290239A (ja) | 2005-05-13 | 2009-09-08 | 交流発光装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006319333A JP2006319333A (ja) | 2006-11-24 |
JP2006319333A5 JP2006319333A5 (ja) | 2008-04-10 |
JP4413884B2 true JP4413884B2 (ja) | 2010-02-10 |
Family
ID=37311289
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006129663A Active JP4413884B2 (ja) | 2005-05-13 | 2006-05-08 | 交流発光装置及びその製造方法 |
JP2009207007A Pending JP2009290239A (ja) | 2005-05-13 | 2009-09-08 | 交流発光装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009207007A Pending JP2009290239A (ja) | 2005-05-13 | 2009-09-08 | 交流発光装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7544524B2 (ja) |
JP (2) | JP4413884B2 (ja) |
KR (1) | KR100858319B1 (ja) |
DE (1) | DE102006021648B4 (ja) |
NL (1) | NL1031772C2 (ja) |
TW (1) | TW200640045A (ja) |
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US8847239B2 (en) * | 2005-05-13 | 2014-09-30 | Epistar Corporation | AC LED device and method for fabricating the same |
US8704241B2 (en) * | 2005-05-13 | 2014-04-22 | Epistar Corporation | Light-emitting systems |
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2006
- 2006-03-20 TW TW095109419A patent/TW200640045A/zh unknown
- 2006-05-08 DE DE102006021648.2A patent/DE102006021648B4/de active Active
- 2006-05-08 JP JP2006129663A patent/JP4413884B2/ja active Active
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JP2009290239A (ja) | 2009-12-10 |
US7544524B2 (en) | 2009-06-09 |
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NL1031772C2 (nl) | 2008-05-14 |
JP2006319333A (ja) | 2006-11-24 |
KR20060117210A (ko) | 2006-11-16 |
TWI304274B (ja) | 2008-12-11 |
NL1031772A1 (nl) | 2006-11-14 |
TW200640045A (en) | 2006-11-16 |
DE102006021648A1 (de) | 2006-11-23 |
KR100858319B1 (ko) | 2008-09-11 |
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