JPS5529178A - Ac driving composite light emission diode device - Google Patents

Ac driving composite light emission diode device

Info

Publication number
JPS5529178A
JPS5529178A JP10313678A JP10313678A JPS5529178A JP S5529178 A JPS5529178 A JP S5529178A JP 10313678 A JP10313678 A JP 10313678A JP 10313678 A JP10313678 A JP 10313678A JP S5529178 A JPS5529178 A JP S5529178A
Authority
JP
Japan
Prior art keywords
diodes
electrode
region
light emission
driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10313678A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Yasuo Okuno
Keishiro Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP10313678A priority Critical patent/JPS5529178A/en
Publication of JPS5529178A publication Critical patent/JPS5529178A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE: To permit AC driving and at the same time, to increase substrate utilization efficiency by combining a pair of light emission diodes which are connected in parallel in the opposite direction.
CONSTITUTION: n-Type regions 2 and 3 are diffusion-formed on both sides of a p-type semiconductor substrate. An electrode 1' is attached through a low resistant region for ohm contact to the side surface of the substrate 1, an electrode 2', to the region 2, and an electrode 3', to the region 3. In this way , a diode pair consisting of two diodes D1 and D2 was formed and drived by use of AC source. The voltage of the AC source is transformed to ones suitable for driving the diodes D1 and D2 by use of a transformer T, and they are connected to the terminals of the diodes D1 and D2. In addition, an intermediate tap of the transformer T is connected to connection point of the diodes D1 and D2. Thus the diodes alternately emit light every half cycle of AC frequency and therefore continue the emission of light over all the cycle.
COPYRIGHT: (C)1980,JPO&Japio
JP10313678A 1978-08-24 1978-08-24 Ac driving composite light emission diode device Pending JPS5529178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10313678A JPS5529178A (en) 1978-08-24 1978-08-24 Ac driving composite light emission diode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10313678A JPS5529178A (en) 1978-08-24 1978-08-24 Ac driving composite light emission diode device

Publications (1)

Publication Number Publication Date
JPS5529178A true JPS5529178A (en) 1980-03-01

Family

ID=14346107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10313678A Pending JPS5529178A (en) 1978-08-24 1978-08-24 Ac driving composite light emission diode device

Country Status (1)

Country Link
JP (1) JPS5529178A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1251568A2 (en) * 2001-04-17 2002-10-23 Samsung Electronics Co., Ltd. Light-emitting device and display apparatus using the same
JP2003303683A (en) * 2002-04-09 2003-10-24 Semiconductor Energy Lab Co Ltd Luminous device
WO2007071173A1 (en) * 2005-12-23 2007-06-28 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Light emitting device
WO2007119663A1 (en) * 2006-04-04 2007-10-25 Rohm Co., Ltd. Semiconductor light emitting device
EP2270882A1 (en) * 2009-06-30 2011-01-05 Koninklijke Philips Electronics N.V. Light emitting diode circuit for ambient light
DE102010023342A1 (en) * 2010-06-10 2011-12-15 Osram Opto Semiconductors Gmbh Light-emitting diode arrangement and light-emitting means, in particular with such a light-emitting diode arrangement
DE102006021648B4 (en) 2005-05-13 2021-08-19 Epistar Corp. AC voltage light emitting device and manufacturing process therefor

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1251568A2 (en) * 2001-04-17 2002-10-23 Samsung Electronics Co., Ltd. Light-emitting device and display apparatus using the same
EP1251568A3 (en) * 2001-04-17 2008-02-27 Samsung Electronics Co., Ltd. Light-emitting device and display apparatus using the same
JP2003303683A (en) * 2002-04-09 2003-10-24 Semiconductor Energy Lab Co Ltd Luminous device
US7535440B2 (en) 2002-04-09 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
DE102006021648B4 (en) 2005-05-13 2021-08-19 Epistar Corp. AC voltage light emitting device and manufacturing process therefor
WO2007071173A1 (en) * 2005-12-23 2007-06-28 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Light emitting device
US7659546B2 (en) 2005-12-23 2010-02-09 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Light emitting device
WO2007119663A1 (en) * 2006-04-04 2007-10-25 Rohm Co., Ltd. Semiconductor light emitting device
US7847305B2 (en) 2006-04-04 2010-12-07 Rohm Co., Ltd. Semiconductor light emitting device
EP2270882A1 (en) * 2009-06-30 2011-01-05 Koninklijke Philips Electronics N.V. Light emitting diode circuit for ambient light
WO2011001334A1 (en) * 2009-06-30 2011-01-06 Koninklijke Philips Electronics N.V. Light emitting diode circuit for ambient light
DE102010023342A1 (en) * 2010-06-10 2011-12-15 Osram Opto Semiconductors Gmbh Light-emitting diode arrangement and light-emitting means, in particular with such a light-emitting diode arrangement
US9497826B2 (en) 2010-06-10 2016-11-15 Osram Opto Semiconductors Gmbh Light-emitting diode arrangement and light-emitting means, in particular with such a light-emitting diode arrangement

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