JP4360911B2 - 有機電子デバイス用の絶縁体 - Google Patents
有機電子デバイス用の絶縁体 Download PDFInfo
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- JP4360911B2 JP4360911B2 JP2003541075A JP2003541075A JP4360911B2 JP 4360911 B2 JP4360911 B2 JP 4360911B2 JP 2003541075 A JP2003541075 A JP 2003541075A JP 2003541075 A JP2003541075 A JP 2003541075A JP 4360911 B2 JP4360911 B2 JP 4360911B2
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- insulator
- poly
- organic
- styrene
- layer
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- 239000012212 insulator Substances 0.000 title claims description 49
- 239000011368 organic material Substances 0.000 claims description 10
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 8
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 229920003270 Cymel® Polymers 0.000 claims description 3
- XXROGKLTLUQVRX-UHFFFAOYSA-N hydroxymethylethylene Natural products OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004971 Cross linker Substances 0.000 claims description 2
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 claims 1
- 239000004372 Polyvinyl alcohol Substances 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 claims 1
- 229920002451 polyvinyl alcohol Polymers 0.000 claims 1
- 239000010410 layer Substances 0.000 description 41
- 239000000463 material Substances 0.000 description 22
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229920002367 Polyisobutene Polymers 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229920002943 EPDM rubber Polymers 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229920005601 base polymer Polymers 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229920001002 functional polymer Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002605 large molecules Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002848 poly(3-alkoxythiophenes) Polymers 0.000 description 1
- 229920002959 polymer blend Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002102 polyvinyl toluene Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
- H01B3/442—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from aromatic vinyl compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
- H01B3/447—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from acrylic compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
- Organic Insulating Materials (AREA)
Description
(−CH2 CCl2−)x−(−CH2CH(CN)−)y−(CH2C(CH3)(CO2CH3)−)z
[式中、x、y及びzはそれぞれ相互に無関係で、0〜1の値を表し、有利に実施例中に記載された値を表すことができる]で示される市販のPVDC−PAN−PMMA−コポリマーを有する。
[Ax/B1-x]
のベースポリマーを有し、その際に、Aは例えばポリヒドロキシスチレンであり、Bはポリ(スチレン−コ−アリルアルコール)、例えばポリビニルトルエン、ポリ−アルファ−メチルスチレンであり、xは0.5〜1の値を表すことができる。
[Ax/By]
の2種のコポリマーの混合物を有する絶縁体を使用し、その際、特にポリ(ビニルトルエン−コ−アルファメチルスチレン)/ポリ(スチレン−コ−アリルアルコール)の混合物が適している。添字のx及びyは、この場合同じ又は異なることができ、0.5〜1の値をとることができる。特に有利にx及びyは同じである。この混合物はまた極性溶剤、特にジオキサン中に溶解されている。
a) プロセス技術的要求:
− この絶縁体層は慣用の有機溶剤、例えばジオキサン、ブタノール、他のアルコールなど中での良好な溶解性を示す。
− 絶縁体層の比誘電率は、1Hz〜100kHzの周波数領域においてほぼ一定である。「ほぼ一定」とは、この場合に比誘電率の変動が50%以下の場合の比誘電率を表す。
− この絶縁体層は、境界部で湾曲、伸張又は圧縮のような機械的負荷に対して耐性である。
− PIB(Aldrich)0.4gをヘキサン9.6g中に室温で溶かす;
− この溶液を0.45μmのPTFE−注射器型フィルタにより濾過する;
− この溶液を次ぎにスピンコーティング(4000rpm;20sec)により、ソース/ドレイン−電極及び半導体を備えた基板上にコーティングし(トップ−ゲート構造)、極めて均一な、約260nmの厚さの層が得られる
− この試料を約30分間室温で真空ポンプによる真空中で乾燥させる− 引き続き、フォトレジストの厚い層を絶縁体上に設置し、露光し、通常の条件下で現像する;
− 試料をヘキサン浴中に浸漬し、フォトレジストから露出した箇所に関して絶縁体を除去する
− 残りのフォトレジストを適当な溶剤により除去する。
− PVDC−co−PAN−co−PMMA(Aldrich)0.4gをジオキサン9g中に40から50℃で溶かす
− 次いで、Cymel 327(Cytec Industries Inc.)0.5g及びショウノウスルホン酸0.1gを添加し、なお数秒間振盪させる;
− この溶液を0.45μmのPTFE−フィルタにより濾過する;
− この溶液をスピンコーティング(8000rpm;20sec)により、ソース/ドレイン−電極及び半導体を備えた基板上にコーティングし(トップ−ゲート構造)、極めて均一な、約400nmの厚さの層が得られる;
− この試料を約30分間室温で真空ポンプによる真空中で乾燥させる;
− この層に次ぎに薄い金層を蒸着し、この金層を再びフォトリソグラフィーにより構造化する(フォトレジスト、次ぎにKJ/J2−溶液でエッチング)
− この設置された金属マスクは、露出した絶縁体面をトルエンに浸した布で除去することにより絶縁層の構造化を可能にする
− 次いで、残留する金の除去をKJ/J2−溶液で行う
− 最後の工程は、絶縁体の架橋である(90℃で10分)。
Claims (7)
- 絶縁体層の誘電率の変動は1Hz〜100kHzの周波数領域において≦50%である、有機電界効果型トランジスタ及び/又は少なくとも部分的に有機材料をベースとするキャパシタ用の絶縁体において、前記絶縁体は主として有機材料からなり、かつ一般式
(−CH 2 CCl 2 −) x −(−CH 2 CH(CN)−) y −(CH 2 C(CH 3 )(CO 2 CH 3 )−) z
[式中、x、y及びzはそれぞれ相互に無関係で、0〜1の値を表すことができる]のPVDC−PAN−PMMA−コポリマーを有する、絶縁体。 - さらに架橋剤成分のHMMMを有する、請求項1記載の絶縁体。
- さらにCymelを有する、請求項1又は2記載の絶縁体。
- 絶縁体層の誘電率の変動は1Hz〜100kHzの周波数領域において≦50%である、有機電界効果型トランジスタ及び/又は少なくとも部分的に有機材料をベースとするキャパシタ用の絶縁体において、前記絶縁体は主として有機材料からなり、かつ一般式
[Ax/B1-x]
[式中、Aはポリヒドロキシスチレンであり、Bはポリ(スチレン−コ−アリルアルコール)、ポリビニルアルコール、及び/又はポリ−α−メチルスチレンであり、xは0.5〜1の値を表すことができる]のポリマーを有する、絶縁体。 - ポリヒドロキシスチレン50%/ポリ(スチレン−コ−アリルアルコール)50%からなる混合物を有する、請求項4記載の絶縁体。
- 絶縁体層の誘電率の変動は1Hz〜100kHzの周波数領域において≦50%である、有機電界効果型トランジスタ及び/又は少なくとも部分的に有機材料をベースとするキャパシタ用の絶縁体において、前記絶縁体は主として有機材料からなり、かつ一般式
[Ax/By]
[式中、Aはポリ(ビニルトルエン−コ−アルファメチルスチレン)であり、Bはポリ(スチレン−コ−アリルアルコール)であり、その際、x及びyの値は同じ又は異なり、0.5〜1の値を有する]の2種のポリマーの混合物を有する、絶縁体。 - 前記ポリマーをジオキサン中に溶かし、前記溶液を基材に塗布しかつ乾燥させることにより製造された、請求項1から6までのいずれか1項記載の絶縁体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10151036A DE10151036A1 (de) | 2001-10-16 | 2001-10-16 | Isolator für ein organisches Elektronikbauteil |
PCT/DE2002/003292 WO2003038921A1 (de) | 2001-10-16 | 2002-09-05 | Isolator für ein organisches elektronikbauteil |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005507180A JP2005507180A (ja) | 2005-03-10 |
JP2005507180A5 JP2005507180A5 (ja) | 2009-03-19 |
JP4360911B2 true JP4360911B2 (ja) | 2009-11-11 |
Family
ID=7702674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003541075A Expired - Fee Related JP4360911B2 (ja) | 2001-10-16 | 2002-09-05 | 有機電子デバイス用の絶縁体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7298023B2 (ja) |
EP (1) | EP1436850A1 (ja) |
JP (1) | JP4360911B2 (ja) |
DE (1) | DE10151036A1 (ja) |
WO (1) | WO2003038921A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10043204A1 (de) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
ATE525757T1 (de) * | 2001-12-19 | 2011-10-15 | Merck Patent Gmbh | Organischer feldeffekttransistor mit organischem dielektrikum |
US20040094761A1 (en) * | 2002-11-02 | 2004-05-20 | David Sparrowe | Polymerizable amine mixtures, amine polymer materials and their use |
US20040171743A1 (en) * | 2003-01-21 | 2004-09-02 | Terry Brewer, Ph.D. | Hybrid organic-inorganic polymer coatings with high refractive indices |
WO2006104069A1 (ja) * | 2005-03-28 | 2006-10-05 | Pioneer Corporation | ゲート絶縁膜、有機トランジスタ、有機el表示装置の製造方法、ディスプレイ |
DE102005031448A1 (de) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Aktivierbare optische Schicht |
DE102005044306A1 (de) | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Elektronische Schaltung und Verfahren zur Herstellung einer solchen |
CH705051B1 (fr) * | 2007-12-21 | 2012-12-14 | Swatch Group Res & Dev Ltd | Dispositif d'affichage à matrice active. |
US8692238B2 (en) | 2012-04-25 | 2014-04-08 | Eastman Kodak Company | Semiconductor devices and methods of preparation |
US8779415B2 (en) | 2012-11-08 | 2014-07-15 | Eastman Kodak Company | Devices containing organic polymeric multi-metallic composites |
WO2015191293A1 (en) | 2014-06-11 | 2015-12-17 | Eastman Kodak Company | Devices having dielectric layers with thiosulfate-containing polymers |
DE102016115742B4 (de) | 2015-12-08 | 2022-11-24 | Shanghai Tianma Micro-electronics Co., Ltd. | Verbundsubstrat, flexible Anzeigevorrichtung und Verfahren zu deren Herstellung |
Family Cites Families (111)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3512052A (en) | 1968-01-11 | 1970-05-12 | Gen Motors Corp | Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric |
US3769096A (en) * | 1971-03-12 | 1973-10-30 | Bell Telephone Labor Inc | Pyroelectric devices |
JPS543594B2 (ja) | 1973-10-12 | 1979-02-24 | ||
JPS54101176A (en) | 1978-01-26 | 1979-08-09 | Shinetsu Polymer Co | Contact member for push switch |
US4442019A (en) | 1978-05-26 | 1984-04-10 | Marks Alvin M | Electroordered dipole suspension |
US4340657A (en) * | 1980-02-19 | 1982-07-20 | Polychrome Corporation | Novel radiation-sensitive articles |
US4666735A (en) * | 1983-04-15 | 1987-05-19 | Polyonics Corporation | Process for producing product having patterned metal layer |
DE3338597A1 (de) | 1983-10-24 | 1985-05-02 | GAO Gesellschaft für Automation und Organisation mbH, 8000 München | Datentraeger mit integriertem schaltkreis und verfahren zur herstellung desselben |
JPS60117769A (ja) | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体メモリ装置 |
EP0239808B1 (en) * | 1986-03-03 | 1991-02-27 | Kabushiki Kaisha Toshiba | Radiation detecting device |
JP2728412B2 (ja) | 1987-12-25 | 1998-03-18 | 株式会社日立製作所 | 半導体装置 |
GB2215307B (en) | 1988-03-04 | 1991-10-09 | Unisys Corp | Electronic component transportation container |
US5364735A (en) * | 1988-07-01 | 1994-11-15 | Sony Corporation | Multiple layer optical record medium with protective layers and method for producing same |
US4937119A (en) * | 1988-12-15 | 1990-06-26 | Hoechst Celanese Corp. | Textured organic optical data storage media and methods of preparation |
US5892244A (en) * | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
US6331356B1 (en) * | 1989-05-26 | 2001-12-18 | International Business Machines Corporation | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
US5206525A (en) * | 1989-12-27 | 1993-04-27 | Nippon Petrochemicals Co., Ltd. | Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials |
FR2664430B1 (fr) * | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
FR2673041A1 (fr) | 1991-02-19 | 1992-08-21 | Gemplus Card Int | Procede de fabrication de micromodules de circuit integre et micromodule correspondant. |
US5408109A (en) * | 1991-02-27 | 1995-04-18 | The Regents Of The University Of California | Visible light emitting diodes fabricated from soluble semiconducting polymers |
JPH0580530A (ja) | 1991-09-24 | 1993-04-02 | Hitachi Ltd | 薄膜パターン製造方法 |
US5173835A (en) | 1991-10-15 | 1992-12-22 | Motorola, Inc. | Voltage variable capacitor |
DE59105477D1 (de) * | 1991-10-30 | 1995-06-14 | Fraunhofer Ges Forschung | Belichtungsvorrichtung. |
JP2709223B2 (ja) * | 1992-01-30 | 1998-02-04 | 三菱電機株式会社 | 非接触形携帯記憶装置 |
DE4243832A1 (de) | 1992-12-23 | 1994-06-30 | Daimler Benz Ag | Tastsensoranordnung |
JP3457348B2 (ja) * | 1993-01-15 | 2003-10-14 | 株式会社東芝 | 半導体装置の製造方法 |
US5567550A (en) * | 1993-03-25 | 1996-10-22 | Texas Instruments Incorporated | Method of making a mask for making integrated circuits |
JPH0722669A (ja) * | 1993-07-01 | 1995-01-24 | Mitsubishi Electric Corp | 可塑性機能素子 |
JP3460863B2 (ja) * | 1993-09-17 | 2003-10-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5556706A (en) * | 1993-10-06 | 1996-09-17 | Matsushita Electric Industrial Co., Ltd. | Conductive layered product and method of manufacturing the same |
IL111151A (en) | 1994-10-03 | 1998-09-24 | News Datacom Ltd | Secure access systems |
JP3246189B2 (ja) * | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | 半導体表示装置 |
US5574291A (en) * | 1994-12-09 | 1996-11-12 | Lucent Technologies Inc. | Article comprising a thin film transistor with low conductivity organic layer |
JP3068430B2 (ja) | 1995-04-25 | 2000-07-24 | 富山日本電気株式会社 | 固体電解コンデンサ及びその製造方法 |
US5652645A (en) * | 1995-07-24 | 1997-07-29 | Anvik Corporation | High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates |
US5625199A (en) * | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
GB2310493B (en) | 1996-02-26 | 2000-08-02 | Unilever Plc | Determination of the characteristics of fluid |
JP3080579B2 (ja) | 1996-03-06 | 2000-08-28 | 富士機工電子株式会社 | エアリア・グリッド・アレイ・パッケージの製造方法 |
DE19629656A1 (de) * | 1996-07-23 | 1998-01-29 | Boehringer Mannheim Gmbh | Diagnostischer Testträger mit mehrschichtigem Testfeld und Verfahren zur Bestimmung von Analyt mit dessen Hilfe |
US6344662B1 (en) * | 1997-03-25 | 2002-02-05 | International Business Machines Corporation | Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
KR100248392B1 (ko) * | 1997-05-15 | 2000-09-01 | 정선종 | 유기물전계효과트랜지스터와결합된유기물능동구동전기발광소자및그소자의제작방법 |
JPH1135893A (ja) * | 1997-05-22 | 1999-02-09 | Toray Dow Corning Silicone Co Ltd | シート状ホットメルト接着剤、および半導体装置 |
EP0968537B1 (en) * | 1997-08-22 | 2012-05-02 | Creator Technology B.V. | A method of manufacturing a field-effect transistor substantially consisting of organic materials |
CA2301626C (en) * | 1997-09-11 | 2008-05-20 | Precision Dynamics Corporation | Radio frequency identification tag on flexible substrate |
US6078196A (en) * | 1997-09-17 | 2000-06-20 | Intel Corporation | Data enabled logic circuits |
US6251513B1 (en) * | 1997-11-08 | 2001-06-26 | Littlefuse, Inc. | Polymer composites for overvoltage protection |
JPH11142810A (ja) | 1997-11-12 | 1999-05-28 | Nintendo Co Ltd | 携帯型情報処理装置 |
US5997817A (en) * | 1997-12-05 | 1999-12-07 | Roche Diagnostics Corporation | Electrochemical biosensor test strip |
EP0958663A1 (en) * | 1997-12-05 | 1999-11-24 | Koninklijke Philips Electronics N.V. | Identification transponder |
US5998805A (en) * | 1997-12-11 | 1999-12-07 | Motorola, Inc. | Active matrix OED array with improved OED cathode |
US6083104A (en) * | 1998-01-16 | 2000-07-04 | Silverlit Toys (U.S.A.), Inc. | Programmable toy with an independent game cartridge |
AU733522B2 (en) * | 1998-01-28 | 2001-05-17 | Thin Film Electronics Asa | A method for generating electrical conducting and/or semiconducting structures in three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating |
US6087196A (en) | 1998-01-30 | 2000-07-11 | The Trustees Of Princeton University | Fabrication of organic semiconductor devices using ink jet printing |
US6045977A (en) * | 1998-02-19 | 2000-04-04 | Lucent Technologies Inc. | Process for patterning conductive polyaniline films |
DE19816860A1 (de) | 1998-03-06 | 1999-11-18 | Deutsche Telekom Ag | Chipkarte, insbesondere Guthabenkarte |
US6033202A (en) * | 1998-03-27 | 2000-03-07 | Lucent Technologies Inc. | Mold for non - photolithographic fabrication of microstructures |
GB9808061D0 (en) * | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
TW410478B (en) * | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
US5967048A (en) * | 1998-06-12 | 1999-10-19 | Howard A. Fromson | Method and apparatus for the multiple imaging of a continuous web |
US6215130B1 (en) * | 1998-08-20 | 2001-04-10 | Lucent Technologies Inc. | Thin film transistors |
JP4689825B2 (ja) * | 1998-08-26 | 2011-05-25 | センサーズ・フォー・メデセン・アンド・サイエンス・インコーポレーテッド | 光学式検知装置 |
US6315883B1 (en) * | 1998-10-26 | 2001-11-13 | Novellus Systems, Inc. | Electroplanarization of large and small damascene features using diffusion barriers and electropolishing |
DE19851703A1 (de) | 1998-10-30 | 2000-05-04 | Inst Halbleiterphysik Gmbh | Verfahren zur Herstellung von elektronischen Strukturen |
US6207522B1 (en) * | 1998-11-23 | 2001-03-27 | Microcoating Technologies | Formation of thin film capacitors |
US6384804B1 (en) * | 1998-11-25 | 2002-05-07 | Lucent Techonologies Inc. | Display comprising organic smart pixels |
US6506438B2 (en) * | 1998-12-15 | 2003-01-14 | E Ink Corporation | Method for printing of transistor arrays on plastic substrates |
US6321571B1 (en) * | 1998-12-21 | 2001-11-27 | Corning Incorporated | Method of making glass structures for flat panel displays |
US6114088A (en) * | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
GB2347013A (en) * | 1999-02-16 | 2000-08-23 | Sharp Kk | Charge-transport structures |
WO2000052457A1 (en) * | 1999-03-02 | 2000-09-08 | Helix Biopharma Corporation | Card-based biosensor device |
US6207472B1 (en) * | 1999-03-09 | 2001-03-27 | International Business Machines Corporation | Low temperature thin film transistor fabrication |
US6498114B1 (en) * | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
US6072716A (en) * | 1999-04-14 | 2000-06-06 | Massachusetts Institute Of Technology | Memory structures and methods of making same |
DE19921024C2 (de) | 1999-05-06 | 2001-03-08 | Wolfgang Eichelmann | Videospielanlage |
US6383664B2 (en) * | 1999-05-11 | 2002-05-07 | The Dow Chemical Company | Electroluminescent or photocell device having protective packaging |
JP3940546B2 (ja) * | 1999-06-07 | 2007-07-04 | 株式会社東芝 | パターン形成方法およびパターン形成材料 |
EP1192676A1 (en) * | 1999-06-21 | 2002-04-03 | Cambridge University Technical Services Limited | Aligned polymers for an organic tft |
DE19933757A1 (de) | 1999-07-19 | 2001-01-25 | Giesecke & Devrient Gmbh | Chipkarte mit integrierter Batterie |
DE19935527A1 (de) | 1999-07-28 | 2001-02-08 | Giesecke & Devrient Gmbh | Aktive Folie für Chipkarten mit Display |
DE19937262A1 (de) | 1999-08-06 | 2001-03-01 | Siemens Ag | Anordnung mit Transistor-Funktion |
US6593690B1 (en) * | 1999-09-03 | 2003-07-15 | 3M Innovative Properties Company | Large area organic electronic devices having conducting polymer buffer layers and methods of making same |
US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
WO2001027998A1 (en) * | 1999-10-11 | 2001-04-19 | Koninklijke Philips Electronics N.V. | Integrated circuit |
US6335539B1 (en) * | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
US6284562B1 (en) * | 1999-11-17 | 2001-09-04 | Agere Systems Guardian Corp. | Thin film transistors |
US6621098B1 (en) * | 1999-11-29 | 2003-09-16 | The Penn State Research Foundation | Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material |
US6673434B2 (en) * | 1999-12-01 | 2004-01-06 | Honeywell International, Inc. | Thermal interface materials |
US6197663B1 (en) * | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
CA2395004C (en) * | 1999-12-21 | 2014-01-28 | Plastic Logic Limited | Solution processing |
US6304232B1 (en) * | 2000-02-24 | 2001-10-16 | The Goodyear Tire & Rubber Company | Circuit module |
DE10012204A1 (de) | 2000-03-13 | 2001-09-20 | Siemens Ag | Einrichtung zum Kennzeichnen von Stückgut |
US6441196B2 (en) * | 2000-05-19 | 2002-08-27 | Alcon, Inc. | Processes and novel intermediates for 11-oxa prostaglandin synthesis |
US6329226B1 (en) * | 2000-06-01 | 2001-12-11 | Agere Systems Guardian Corp. | Method for fabricating a thin-film transistor |
DE10033112C2 (de) | 2000-07-07 | 2002-11-14 | Siemens Ag | Verfahren zur Herstellung und Strukturierung organischer Feldeffekt-Transistoren (OFET), hiernach gefertigter OFET und seine Verwendung |
JP3609697B2 (ja) * | 2000-08-10 | 2005-01-12 | 北川工業株式会社 | 電気・電子装置用の導電性箔付き熱伝導シート |
US7875975B2 (en) * | 2000-08-18 | 2011-01-25 | Polyic Gmbh & Co. Kg | Organic integrated circuit completely encapsulated by multi-layered barrier and included in RFID tag |
DE10043204A1 (de) | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
DE10045192A1 (de) | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
DE10047171A1 (de) | 2000-09-22 | 2002-04-18 | Siemens Ag | Elektrode und/oder Leiterbahn für organische Bauelemente und Herstellungverfahren dazu |
KR20020036916A (ko) | 2000-11-11 | 2002-05-17 | 주승기 | 실리콘 박막의 결정화 방법 및 이에 의해 제조된 반도체소자 |
GB0028867D0 (en) * | 2000-11-28 | 2001-01-10 | Avecia Ltd | Field effect translators,methods for the manufacture thereof and materials therefor |
KR100390522B1 (ko) | 2000-12-01 | 2003-07-07 | 피티플러스(주) | 결정질 실리콘 활성층을 포함하는 박막트랜지스터 제조 방법 |
US20020170897A1 (en) | 2001-05-21 | 2002-11-21 | Hall Frank L. | Methods for preparing ball grid array substrates via use of a laser |
US6870180B2 (en) | 2001-06-08 | 2005-03-22 | Lucent Technologies Inc. | Organic polarizable gate transistor apparatus and method |
JP3865601B2 (ja) * | 2001-06-12 | 2007-01-10 | 日東電工株式会社 | 電磁波抑制体シート |
JP2003089259A (ja) * | 2001-09-18 | 2003-03-25 | Hitachi Ltd | パターン形成方法およびパターン形成装置 |
US7351660B2 (en) | 2001-09-28 | 2008-04-01 | Hrl Laboratories, Llc | Process for producing high performance interconnects |
US6946332B2 (en) * | 2002-03-15 | 2005-09-20 | Lucent Technologies Inc. | Forming nanoscale patterned thin film metal layers |
US6812509B2 (en) | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
US6870183B2 (en) * | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
-
2001
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2002
- 2002-09-05 US US10/492,922 patent/US7298023B2/en not_active Expired - Fee Related
- 2002-09-05 EP EP02769910A patent/EP1436850A1/de not_active Withdrawn
- 2002-09-05 WO PCT/DE2002/003292 patent/WO2003038921A1/de active Application Filing
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JP2005507180A (ja) | 2005-03-10 |
US20050048803A1 (en) | 2005-03-03 |
US7298023B2 (en) | 2007-11-20 |
EP1436850A1 (de) | 2004-07-14 |
DE10151036A1 (de) | 2003-05-08 |
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