JP4031764B2 - 弾性表面波素子、弾性表面波装置、デュプレクサ及び弾性表面波素子の製造方法 - Google Patents
弾性表面波素子、弾性表面波装置、デュプレクサ及び弾性表面波素子の製造方法 Download PDFInfo
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- JP4031764B2 JP4031764B2 JP2004066276A JP2004066276A JP4031764B2 JP 4031764 B2 JP4031764 B2 JP 4031764B2 JP 2004066276 A JP2004066276 A JP 2004066276A JP 2004066276 A JP2004066276 A JP 2004066276A JP 4031764 B2 JP4031764 B2 JP 4031764B2
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- acoustic wave
- surface acoustic
- piezoelectric substrate
- wave device
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- 238000010897 surface acoustic wave method Methods 0.000 title claims description 103
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 125
- 239000000654 additive Substances 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 16
- 230000000996 additive effect Effects 0.000 claims description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 229910052748 manganese Inorganic materials 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 229910052742 iron Inorganic materials 0.000 claims description 11
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 18
- 239000010936 titanium Substances 0.000 description 15
- 238000005259 measurement Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 230000005484 gravity Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005616 pyroelectricity Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02921—Measures for preventing electric discharge due to pyroelectricity
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02984—Protection measures against damaging
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
Claims (6)
- 焦電性の圧電性基板と、前記圧電性基板上にTiN又はTiからなるバッファ層を介して形成された単結晶アルミニウムからなるIDT電極とを備え、
前記圧電性基板の体積抵抗率が、3.6×1010Ω・cm以上、1.5×1014Ω・cm以下であり、
前記圧電性基板には、Fe、Mn、Cu及びTiのうちの少なくとも1種類の添加物が添加されている、弾性表面波素子。 - 前記添加物の添加率が、1.24wt%以下である、請求項1に記載の弾性表面波素子。
- 前記圧電性基板が、主にタンタル酸リチウムで構成されている、請求項1又は2に記載の弾性表面波素子。
- 焦電性の圧電性基板と、前記圧電性基板上にTiN又はTiからなるバッファ層を介して形成された単結晶アルミニウムからなるIDT電極とを有し、前記圧電性基板の体積抵抗率が、3.6×1010Ω・cm以上、1.5×1014Ω・cm以下であり、前記圧電性基板に、Fe、Mn、Cu及びTiのうちの少なくとも1種類の添加物が添加されている弾性表面波素子と、
前記弾性表面波素子が搭載される面に、前記IDT電極と電気的に接続される電極端子が形成された実装基板とを備える、弾性表面波装置。 - 焦電性の圧電性基板と、前記圧電性基板上にTiN又はTiからなるバッファ層を介して形成された単結晶アルミニウムからなるIDT電極とを有し、前記圧電性基板の体積抵抗率が、3.6×1010Ω・cm以上、1.5×1014Ω・cm以下であり、前記圧電性基板に、Fe、Mn、Cu及びTiのうちの少なくとも1種類の添加物が添加されている弾性表面波素子を備える、デュプレクサ。
- Fe、Mn、Cu及びTiのうちの少なくとも1種類の添加物が添加されており、体積抵抗率が3.6×1010Ω・cm以上、1.5×1014Ω・cm以下である焦電性の圧電性基板上に、TiN又はTiからなるバッファ層を介して単結晶アルミニウムからなるIDT電極を形成するステップを含む、弾性表面波素子の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004066276A JP4031764B2 (ja) | 2004-03-09 | 2004-03-09 | 弾性表面波素子、弾性表面波装置、デュプレクサ及び弾性表面波素子の製造方法 |
US11/071,303 US7504759B2 (en) | 2004-03-09 | 2005-03-04 | Surface acoustic wave element, surface acoustic wave device, duplexer, and method of making surface acoustic wave element |
CN200510053543A CN100593904C (zh) | 2004-03-09 | 2005-03-08 | 弹性表面波元件及其制造方法、弹性表面波装置、双工器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004066276A JP4031764B2 (ja) | 2004-03-09 | 2004-03-09 | 弾性表面波素子、弾性表面波装置、デュプレクサ及び弾性表面波素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005260372A JP2005260372A (ja) | 2005-09-22 |
JP4031764B2 true JP4031764B2 (ja) | 2008-01-09 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004066276A Expired - Lifetime JP4031764B2 (ja) | 2004-03-09 | 2004-03-09 | 弾性表面波素子、弾性表面波装置、デュプレクサ及び弾性表面波素子の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7504759B2 (ja) |
JP (1) | JP4031764B2 (ja) |
CN (1) | CN100593904C (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2005091500A1 (ja) * | 2004-03-18 | 2007-08-09 | 株式会社村田製作所 | 弾性表面波装置 |
JP5507870B2 (ja) * | 2009-04-09 | 2014-05-28 | 信越化学工業株式会社 | 表面弾性波素子用基板の製造方法 |
KR101374303B1 (ko) | 2009-11-26 | 2014-03-14 | 가부시키가이샤 무라타 세이사쿠쇼 | 압전 디바이스 및 압전 디바이스의 제조방법 |
DE112014006039B4 (de) * | 2013-12-27 | 2022-08-25 | Murata Manufacturing Co., Ltd. | Vorrichtung für elastische Wellen und Herstellungsverfahren dafür |
US9991870B2 (en) | 2015-08-25 | 2018-06-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface acoustic wave (SAW) resonator |
US10020796B2 (en) | 2015-08-25 | 2018-07-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface acoustic wave (SAW) resonator |
US10523178B2 (en) | 2015-08-25 | 2019-12-31 | Avago Technologies International Sales Pte. Limited | Surface acoustic wave (SAW) resonator |
US10536133B2 (en) | 2016-04-22 | 2020-01-14 | Avago Technologies International Sales Pte. Limited | Composite surface acoustic wave (SAW) device with absorbing layer for suppression of spurious responses |
US10469056B2 (en) | 2015-08-25 | 2019-11-05 | Avago Technologies International Sales Pte. Limited | Acoustic filters integrated into single die |
US10177734B2 (en) | 2015-08-25 | 2019-01-08 | Avago Technologies International Sales Pte. Limited | Surface acoustic wave (SAW) resonator |
US10177735B2 (en) * | 2016-02-29 | 2019-01-08 | Avago Technologies International Sales Pte. Limited | Surface acoustic wave (SAW) resonator |
CN115882811A (zh) * | 2023-02-09 | 2023-03-31 | 深圳新声半导体有限公司 | 一种声表面波滤波器的封装结构及其制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3163606B2 (ja) * | 1993-01-29 | 2001-05-08 | 住友電気工業株式会社 | 表面弾性波素子 |
FR2714200B1 (fr) * | 1993-11-25 | 1996-12-27 | Fujitsu Ltd | Dispositif à onde acoustique de surface et son procédé de fabrication. |
WO1996004713A1 (fr) * | 1994-08-05 | 1996-02-15 | Japan Energy Corporation | Dispositif a ondes acoustiques de surface et procede de production |
JPH09199974A (ja) * | 1996-01-19 | 1997-07-31 | Nec Corp | 弾性表面波装置 |
JPH10126207A (ja) | 1996-08-29 | 1998-05-15 | Kyocera Corp | 弾性表面波装置 |
JPH10107573A (ja) | 1996-09-30 | 1998-04-24 | Kyocera Corp | 弾性表面波装置 |
JPH10163802A (ja) | 1996-11-29 | 1998-06-19 | Kyocera Corp | 弾性表面波装置 |
JPH10256862A (ja) | 1997-03-14 | 1998-09-25 | Tdk Corp | 弾性表面波装置 |
CN1081178C (zh) | 1998-07-08 | 2002-03-20 | 中国科学院上海硅酸盐研究所 | 高热导氮化铝陶瓷的制备方法 |
JP2001168676A (ja) | 1999-09-30 | 2001-06-22 | Matsushita Electric Ind Co Ltd | 弾性表面波デバイスおよびその製造方法 |
JP3520414B2 (ja) * | 2001-04-10 | 2004-04-19 | 株式会社村田製作所 | 弾性表面波装置およびその製造方法、通信装置 |
JP2004364041A (ja) | 2003-06-05 | 2004-12-24 | Fujitsu Media Device Kk | 弾性表面波デバイス及びその製造方法 |
JP4417747B2 (ja) | 2004-02-26 | 2010-02-17 | 京セラ株式会社 | 弾性表面波装置およびその製造方法 |
-
2004
- 2004-03-09 JP JP2004066276A patent/JP4031764B2/ja not_active Expired - Lifetime
-
2005
- 2005-03-04 US US11/071,303 patent/US7504759B2/en active Active
- 2005-03-08 CN CN200510053543A patent/CN100593904C/zh active Active
Also Published As
Publication number | Publication date |
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JP2005260372A (ja) | 2005-09-22 |
CN100593904C (zh) | 2010-03-10 |
US7504759B2 (en) | 2009-03-17 |
US20050200234A1 (en) | 2005-09-15 |
CN1667946A (zh) | 2005-09-14 |
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