JP4015968B2 - 強誘電体メモリ - Google Patents

強誘電体メモリ Download PDF

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Publication number
JP4015968B2
JP4015968B2 JP2003164141A JP2003164141A JP4015968B2 JP 4015968 B2 JP4015968 B2 JP 4015968B2 JP 2003164141 A JP2003164141 A JP 2003164141A JP 2003164141 A JP2003164141 A JP 2003164141A JP 4015968 B2 JP4015968 B2 JP 4015968B2
Authority
JP
Japan
Prior art keywords
bit line
memory cell
dummy
dummy bit
electrically connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003164141A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005004811A (ja
Inventor
克彦 穂谷
大三郎 高島
ノルベルト・レーム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Toshiba Corp
Original Assignee
Infineon Technologies AG
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG, Toshiba Corp filed Critical Infineon Technologies AG
Priority to JP2003164141A priority Critical patent/JP4015968B2/ja
Priority to PCT/JP2004/008288 priority patent/WO2004109705A2/en
Priority to EP04736356A priority patent/EP1631964A2/de
Priority to CNB2004800161525A priority patent/CN100468566C/zh
Priority to KR20057023539A priority patent/KR100786428B1/ko
Publication of JP2005004811A publication Critical patent/JP2005004811A/ja
Application granted granted Critical
Publication of JP4015968B2 publication Critical patent/JP4015968B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Power Engineering (AREA)
JP2003164141A 2003-06-09 2003-06-09 強誘電体メモリ Expired - Fee Related JP4015968B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003164141A JP4015968B2 (ja) 2003-06-09 2003-06-09 強誘電体メモリ
PCT/JP2004/008288 WO2004109705A2 (en) 2003-06-09 2004-06-08 Ferroelectric memory device
EP04736356A EP1631964A2 (de) 2003-06-09 2004-06-08 Ferroelektrischer speicherbaustein
CNB2004800161525A CN100468566C (zh) 2003-06-09 2004-06-08 铁电存储器件
KR20057023539A KR100786428B1 (ko) 2003-06-09 2004-06-08 강유전성 메모리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003164141A JP4015968B2 (ja) 2003-06-09 2003-06-09 強誘電体メモリ

Publications (2)

Publication Number Publication Date
JP2005004811A JP2005004811A (ja) 2005-01-06
JP4015968B2 true JP4015968B2 (ja) 2007-11-28

Family

ID=33508777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003164141A Expired - Fee Related JP4015968B2 (ja) 2003-06-09 2003-06-09 強誘電体メモリ

Country Status (5)

Country Link
EP (1) EP1631964A2 (de)
JP (1) JP4015968B2 (de)
KR (1) KR100786428B1 (de)
CN (1) CN100468566C (de)
WO (1) WO2004109705A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009099235A (ja) 2007-10-19 2009-05-07 Toshiba Corp 半導体記憶装置
JP4908562B2 (ja) * 2009-09-07 2012-04-04 株式会社東芝 強誘電体メモリ装置
US8310856B2 (en) * 2010-06-09 2012-11-13 Radiant Technology Ferroelectric memories based on arrays of autonomous memory bits
CN102184946B (zh) * 2011-03-17 2017-04-12 复旦大学 金属半导体化合物薄膜和dram存储单元及其制备方法
SG11201901168UA (en) 2016-08-31 2019-03-28 Micron Technology Inc Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory
EP3507808A4 (de) * 2016-08-31 2020-05-27 Micron Technology, Inc. Speicherarrays
SG11201901211XA (en) * 2016-08-31 2019-03-28 Micron Technology Inc Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
EP3507804A4 (de) 2016-08-31 2020-07-15 Micron Technology, INC. Ferroelektrische speicherzellen
CN109690680B (zh) 2016-08-31 2023-07-21 美光科技公司 包含二晶体管一电容器的存储器及用于存取所述存储器的设备与方法
CN109087674A (zh) * 2017-06-14 2018-12-25 萨摩亚商费洛储存科技股份有限公司 铁电内存及其数据读取、写入与制造方法和电容结构
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells
CN107481751B (zh) * 2017-09-06 2020-01-10 复旦大学 一种铁电存储集成电路
CN110428861A (zh) * 2019-09-12 2019-11-08 上海明矽微电子有限公司 一种减小eeprom存储器面积的方法
CN117980993A (zh) * 2021-11-30 2024-05-03 华为技术有限公司 铁电存储器、数据读取方法及电子设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2746730B2 (ja) * 1990-05-17 1998-05-06 富士通株式会社 半導体記憶装置
US6320782B1 (en) * 1996-06-10 2001-11-20 Kabushiki Kaisha Toshiba Semiconductor memory device and various systems mounting them
KR100197576B1 (ko) * 1996-10-31 1999-06-15 윤종용 서브 더미 비트라인 및 서브 더미 워드라인을 가지는반도체 메모리 장치
JP3604524B2 (ja) * 1997-01-07 2004-12-22 東芝マイクロエレクトロニクス株式会社 不揮発性強誘電体メモリ
US5864496A (en) * 1997-09-29 1999-01-26 Siemens Aktiengesellschaft High density semiconductor memory having diagonal bit lines and dual word lines
US5909388A (en) * 1998-03-31 1999-06-01 Siemens Aktiengesellschaft Dynamic random access memory circuit and methods therefor
US6198652B1 (en) * 1998-04-13 2001-03-06 Kabushiki Kaisha Toshiba Non-volatile semiconductor integrated memory device
JP2001119410A (ja) * 1999-10-21 2001-04-27 Sony Corp 自己識別フェーズにおける処理方法

Also Published As

Publication number Publication date
WO2004109705A2 (en) 2004-12-16
JP2005004811A (ja) 2005-01-06
WO2004109705A3 (en) 2005-03-03
KR20060024402A (ko) 2006-03-16
EP1631964A2 (de) 2006-03-08
KR100786428B1 (ko) 2007-12-17
CN100468566C (zh) 2009-03-11
CN1806294A (zh) 2006-07-19

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