JP3801597B2 - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- JP3801597B2 JP3801597B2 JP2004032753A JP2004032753A JP3801597B2 JP 3801597 B2 JP3801597 B2 JP 3801597B2 JP 2004032753 A JP2004032753 A JP 2004032753A JP 2004032753 A JP2004032753 A JP 2004032753A JP 3801597 B2 JP3801597 B2 JP 3801597B2
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- 239000004065 semiconductor Substances 0.000 title claims description 93
- 238000004519 manufacturing process Methods 0.000 title claims description 48
- 239000007789 gas Substances 0.000 claims description 81
- 239000013078 crystal Substances 0.000 claims description 73
- 238000000034 method Methods 0.000 claims description 48
- 238000005530 etching Methods 0.000 claims description 30
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 claims description 29
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 claims description 28
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 20
- UKDOTCFNLHHKOF-FGRDZWBJSA-N (z)-1-chloroprop-1-ene;(z)-1,2-dichloroethene Chemical group C\C=C/Cl.Cl\C=C/Cl UKDOTCFNLHHKOF-FGRDZWBJSA-N 0.000 claims description 17
- KNKRKFALVUDBJE-UHFFFAOYSA-N 1,2-dichloropropane Chemical compound CC(Cl)CCl KNKRKFALVUDBJE-UHFFFAOYSA-N 0.000 claims description 16
- 239000000460 chlorine Substances 0.000 claims description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 14
- 125000004432 carbon atom Chemical group C* 0.000 claims description 14
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 14
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 14
- 238000011049 filling Methods 0.000 claims description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 11
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- HRYZWHHZPQKTII-UHFFFAOYSA-N chloroethane Chemical compound CCCl HRYZWHHZPQKTII-UHFFFAOYSA-N 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 claims description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 4
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 25
- 229910004298 SiO 2 Inorganic materials 0.000 description 21
- 239000010408 film Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 14
- 229940050176 methyl chloride Drugs 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 239000012071 phase Substances 0.000 description 7
- 238000004891 communication Methods 0.000 description 6
- -1 InP compound Chemical class 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 229960003750 ethyl chloride Drugs 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 101150012579 ADSL gene Proteins 0.000 description 1
- 102100020775 Adenylosuccinate lyase Human genes 0.000 description 1
- 108700040193 Adenylosuccinate lyases Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geometry (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
11、101 n型(100)InP基板
12、102 n型InGaAsPガイド層
13、103 InGaAsP−MQW活性層
14、104 p型InPクラッド層
15、105 p型InGaAsコンタクト層
16、106 Feドープ高抵抗埋め込み層
17、107 n電極
18、108 p電極
19、109 SiO2保護膜
110 n型InGaAsP層
111 InGaAsP層
112 p型InP層
113 p型InGaAs層
114 SiO2選択成長マスク
Claims (17)
- InP系化合物半導体結晶の(100)面上の<011>方向あるいは<0−11>方向に設けられた凸状の段差領域をInP系埋め込み層により埋め込む工程において、
1分子中に塩素原子が1個結合した炭素原子を少なくとも2つ含む有機塩素化物を添加した原料ガスを供給して前記埋め込み層を気相成長させることを特徴とする半導体素子の製造方法。 - 前記炭素原子の数は2であることを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記有機塩素化物は、1,2−ジクロロエタン、1,2−ジクロロプロパン、または1,2−ジクロロエチレンの何れかであることを特徴とする請求項1に記載の半導体素子の製造方法。
- 前記化合物半導体結晶は、InP、InGaAs、またはInGaAsPの何れかであることを特徴とする請求項1から3のいずれか一項記載の半導体素子の製造方法。
- 前記埋め込み層は、InP、InGaP、またはInGaAsPの何れかの化合物半導体結晶であることを特徴とする請求項1から3のいずれか一項記載の半導体素子の製造方法。
- 前記埋め込み層はMOCVD法により気相成長され、
当該気相成長条件は、基板温度560〜600℃、成長圧力100〜760Torr、前記有機塩素化物のガス流量がIn供給用のトリメチルインジウム(TMI)ガス流量の6倍以上に設定されることを特徴とする請求項1から5のいずれか一項記載の半導体素子の製造方法。 - 前記段差領域の形状は、ストライプ状、円柱状、または矩形の何れかであることを特徴とする請求項1から6のいずれか一項記載の半導体素子の製造方法。
- InP系化合物半導体結晶の(100)面上に概ね<0−11>方向に延在する凸状の段差領域を設ける工程と、
前記段差領域を有機塩素化物を添加した原料ガスを供給してInP系埋め込み層をMOCVD法により気相成長させて前記段差領域を埋め込む工程と、を備え、
前記段差領域は、<0−11>方向から2.5度以上6.5度以下の角度だけ<011>方向にオフして設けられていることを特徴とする半導体素子の製造方法。 - 前記有機塩素化物は、1,2-ジクロロエタン、1,2−ジクロロエチレン、1,2−ジクロロプロパン、四塩化炭素、モノクロロエタン、モノクロロメタン、塩化水素、またはトリクロロエタンの何れかであることを特徴とする請求項8に記載の半導体素子の製造方法。
- 前記化合物半導体結晶は、InP、InGaAs、またはInGaAsPの何れかであることを特徴とする請求項8又は9に記載の半導体素子の製造方法。
- 前記埋め込み層は、InP、InGaP、またはInGaAsPの何れかの化合物半導体結晶であることを特徴とする請求項8又は9に記載の半導体素子の製造方法。
- 前記凸状の段差領域の上部表面に前記埋め込み層の成長を抑制するためのマスク層を設ける工程を備え、
前記埋め込み層の表面と前記段差領域の上部表面とが実質的に同じ高さとなるように前記埋め込み層が成膜されることを特徴とする請求項1から11の何れか一項記載の半導体素子の製造方法。 - 前記埋め込み層の成膜は、前記凸状の段差領域の上部表面を被覆するように実行されることを特徴とする請求項1から11の何れか一項記載の半導体素子の製造方法。
- 前記埋め込み層の成膜後に、当該埋め込み層の表面と前記段差領域の上部表面とが実質的に同じ高さとなるようにエッチングする工程を備えることを特徴とする請求項1から11、13のいずれか一項に記載の半導体素子の製造方法。
- 前記エッチングは、塩素を含有するガスを用いたドライエッチングにより実行されることを特徴とする請求項14に記載の半導体素子の製造方法。
- 前記エッチングは、少なくとも塩酸:酢酸:過酸化水素水:水=1:1:1:1の混合液を用いたウェットエッチングにより実行されることを特徴とする請求項14に記載の半導体素子の製造方法。
- 前記段差領域は、半導体レーザ素子または光変調器の活性層の両側領域若しくは光検出器の光入射面領域の両側であることを特徴とする請求項1から16の何れか一項記載の半導体素子の製造方法。
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JP2004032753A JP3801597B2 (ja) | 2004-02-09 | 2004-02-09 | 半導体素子の製造方法 |
US11/052,114 US7125735B2 (en) | 2004-02-09 | 2005-02-08 | Method of fabricating semiconductor device |
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JP2004032753A JP3801597B2 (ja) | 2004-02-09 | 2004-02-09 | 半導体素子の製造方法 |
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JP2005223300A JP2005223300A (ja) | 2005-08-18 |
JP3801597B2 true JP3801597B2 (ja) | 2006-07-26 |
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JP2004032753A Expired - Lifetime JP3801597B2 (ja) | 2004-02-09 | 2004-02-09 | 半導体素子の製造方法 |
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US (1) | US7125735B2 (ja) |
JP (1) | JP3801597B2 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4694395B2 (ja) * | 2006-03-22 | 2011-06-08 | 日本オプネクスト株式会社 | 窒化物半導体発光素子及びその製造方法 |
JP5185537B2 (ja) * | 2007-01-19 | 2013-04-17 | 富士通株式会社 | 光半導体装置およびその製造方法 |
JP2008218915A (ja) * | 2007-03-07 | 2008-09-18 | Hamamatsu Photonics Kk | 量子カスケードレーザ素子 |
JP4406023B2 (ja) | 2007-08-24 | 2010-01-27 | 富士通株式会社 | 光集積素子 |
JP5029239B2 (ja) * | 2007-09-13 | 2012-09-19 | 日本電気株式会社 | 半導体光素子およびその製造方法 |
JP5228508B2 (ja) * | 2008-01-31 | 2013-07-03 | 富士通株式会社 | 集積化光半導体装置の製造方法及びその集積化光半導体装置 |
JP2009194023A (ja) * | 2008-02-12 | 2009-08-27 | Sumitomo Electric Ind Ltd | 半導体光素子を作製する方法 |
JP5672771B2 (ja) * | 2010-05-24 | 2015-02-18 | 富士通株式会社 | 半導体光素子及びその製造方法 |
JP5906593B2 (ja) * | 2011-06-27 | 2016-04-20 | 富士通株式会社 | 光半導体集積素子の製造方法 |
JP5803366B2 (ja) * | 2011-07-14 | 2015-11-04 | 住友電気工業株式会社 | 埋め込みヘテロ構造半導体レーザの製造方法及び埋め込みヘテロ構造半導体レーザ |
JP5867129B2 (ja) | 2012-02-08 | 2016-02-24 | 富士通株式会社 | 光半導体素子及び光半導体素子の製造方法 |
IN2015DN01983A (ja) * | 2012-08-23 | 2015-08-14 | Sixpoint Materials Inc |
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JPH01101624A (ja) | 1987-10-15 | 1989-04-19 | Toshiba Corp | 半導体装置の製造方法 |
JP3729210B2 (ja) | 1994-07-26 | 2005-12-21 | 富士通株式会社 | 半導体装置の製造方法 |
US5783844A (en) * | 1994-09-28 | 1998-07-21 | Nippon Telegraph And Telephone Corporation | Optical semiconductor device |
JP3762640B2 (ja) | 2000-12-25 | 2006-04-05 | ユーディナデバイス株式会社 | 半導体装置の製造方法および光導波路の製造方法、多層光導波路の製造方法 |
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US20060177953A1 (en) | 2006-08-10 |
US7125735B2 (en) | 2006-10-24 |
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