JP3699671B2 - ゾーンプーリングによる単結晶のプーリング法 - Google Patents

ゾーンプーリングによる単結晶のプーリング法 Download PDF

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Publication number
JP3699671B2
JP3699671B2 JP2001320567A JP2001320567A JP3699671B2 JP 3699671 B2 JP3699671 B2 JP 3699671B2 JP 2001320567 A JP2001320567 A JP 2001320567A JP 2001320567 A JP2001320567 A JP 2001320567A JP 3699671 B2 JP3699671 B2 JP 3699671B2
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Japan
Prior art keywords
melt
magnetic field
single crystal
pooling
zone
Prior art date
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Expired - Fee Related
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JP2001320567A
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English (en)
Japanese (ja)
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JP2002160993A (ja
Inventor
フィルブリス ヤニス
フォン アモン ヴィルフリート
ミュツニークス アンドリス
ラミング ゲオルク
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Siltronic AG
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Siltronic AG
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/26—Stirring of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2001320567A 2000-10-19 2001-10-18 ゾーンプーリングによる単結晶のプーリング法 Expired - Fee Related JP3699671B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10051885.0 2000-10-19
DE2000151885 DE10051885B4 (de) 2000-10-19 2000-10-19 Verfahren zum Ziehen eines Einkristalls durch Zonenziehen

Publications (2)

Publication Number Publication Date
JP2002160993A JP2002160993A (ja) 2002-06-04
JP3699671B2 true JP3699671B2 (ja) 2005-09-28

Family

ID=7660356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001320567A Expired - Fee Related JP3699671B2 (ja) 2000-10-19 2001-10-18 ゾーンプーリングによる単結晶のプーリング法

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Country Link
JP (1) JP3699671B2 (da)
DE (1) DE10051885B4 (da)
DK (1) DK176384B1 (da)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10216609B4 (de) * 2002-04-15 2005-04-07 Siltronic Ag Verfahren zur Herstellung der Halbleiterscheibe
DE10328859B4 (de) * 2003-06-20 2007-09-27 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Verfahren und Vorrichtung zum Ziehen von Einkristallen durch Zonenziehen
DE102005063346B4 (de) 2005-04-06 2010-10-28 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung einer einkristallinen Si-Scheibe mit annähernd rundem polygonalem Querschnitt
CN102586859A (zh) * 2012-03-10 2012-07-18 天津市环欧半导体材料技术有限公司 一种提高区熔硅单晶径向电阻率均匀性的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3401021A (en) * 1961-08-01 1968-09-10 Westinghouse Electric Corp Apparatus of zone refining and controlling solute segregation in solidifying melts by electromagnetic means
US4659423A (en) * 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation
DD263310A1 (de) * 1987-08-17 1988-12-28 Akad Wissenschaften Ddr Verfahren zur halbleiterkristallzuechtung aus elektrisch leitfaehigen schmelzen

Also Published As

Publication number Publication date
DK176384B1 (da) 2007-10-22
DE10051885A1 (de) 2002-05-02
DE10051885B4 (de) 2007-07-12
DK200101478A (da) 2002-04-20
JP2002160993A (ja) 2002-06-04

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