JP2022091642A - 絶縁膜の製造方法 - Google Patents
絶縁膜の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 47
- 238000009413 insulation Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 239000000463 material Substances 0.000 claims abstract description 96
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 64
- 239000001257 hydrogen Substances 0.000 claims abstract description 63
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000010438 heat treatment Methods 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 239000012298 atmosphere Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- -1 hydrogen siloxane Chemical class 0.000 claims description 6
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 128
- 239000002243 precursor Substances 0.000 description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 34
- 229910052814 silicon oxide Inorganic materials 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 28
- 239000010703 silicon Substances 0.000 description 28
- 239000007789 gas Substances 0.000 description 17
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- 239000000470 constituent Substances 0.000 description 10
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- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 150000003376 silicon Chemical class 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000006068 polycondensation reaction Methods 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
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- 229920000642 polymer Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
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- 229920006015 heat resistant resin Polymers 0.000 description 1
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- 229910021331 inorganic silicon compound Inorganic materials 0.000 description 1
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- 239000002346 layers by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- 230000002123 temporal effect Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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Abstract
Description
図1は、絶縁膜の製造の流れを示す概念図である。図1(A)は、絶縁膜の製造方法の概要を説明する概念図であり、図1(B)~(D)は、図1(A)に示す各段階(S1~S3)を説明する概念的な断面図である。絶縁膜の製造方法は、基板11上に成膜材料を堆積させて成膜材料層12を形成する堆積工程(S1)と、基板11上の成膜材料層12を85℃以上450℃以下の加熱環境81で加熱する加熱工程(S2)と、基板11上の成膜材料層12又は前駆体層の表面SA2に対して水素のラジカルを含むプラズマ82を照射する暴露工程(S3)とを含む。この暴露工程(S3)により、例えばシリコン酸化膜を製造する場合について説明すると、図1(E)に示すように、成膜材料層12の構造FSに衝撃を与えないでネットワーク的な構造FS中に水素Hを拡散させ成膜材料層の成分である水素と結合させる。これによって形成された水素分子H2は成膜材料層12中を移動して成膜材料層12外に排出される。この際、成膜材料層12の構造FS中に処理用の水素Hを十分な密度で深くまで拡散させるという観点で、プラズマ82により形成されるラジカルの照射時間と密度との積は25×1014分・個/cm3以上とすることが望ましい。
図2(A)に示すように、半導体その他の材料で形成された平板状の基板11を準備する。基板11は、例えば半導体基板であり、或いは半導体基板に対して装置部分11dのパターン11pを形成した半導体装置付き基板であってもよい。基板11は、半導体基板に限らず、セラミック基板、ガラス基板、耐熱樹脂基板、金属基板等であってもよく、それらの上に半導体装置を形成したものであってもよい。
図2(C)に示すように、成膜材料層12が堆積された基板11を雰囲気下で加熱する。基板11の加熱温度は、85℃以上450℃以下、好ましくは100℃以上200℃以下とする。この加熱により、成膜材料層12が固化され、図2(D)に示すように、基板11上に前駆体層112が形成された状態となる。
図3(A)に示すように、前駆体層112が形成された基板11、つまり処理対象14の表面14aをプラズマに暴露する。より具体的には、処理対象14の表面14aを、密度が例えば5×1014/cm3以上のラジカルを含む高密度プラズマPZに例えば5分から20分暴露する。これにより、処理対象14のラジカル処理に用いられる高密度プラズマPZ中のラジカルRDの照射時間と密度との積が25×1014分・個/cm3以上となる。このとき、基板11の温度は、0℃~400℃の範囲で一定に保持される。また、プラズマと処理対象14の表面との間の電位差は、10V以下であることが好ましい。ラジカルRDの照射密度は、公知の手法によって決定することができる(T. Arai el al. (2016) "Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices" Journal of Materials Science and Chemical Engineering, 2016, 4, 29-33)。なお、プラズマの圧力に応じてラジカルRDの照射密度も変化するが、プラズマ圧力その他の条件に応じたラジカル照射密度を、予め実験によって求めておくことができる。
以上の工程により基板11上に形成されたシリコン系絶縁膜212,312は、シリコン酸化膜であり、リーク電流が1×10-8A/cm2以下であり、かつ、絶縁破壊電界が8MV/cm以上10MV/cm以下である。また、このシリコン酸化膜は、密度が2.50g/cm3以上2.65g/cm3以下であり、含有されるSi-OH結合及びSi-H結合の割合が1%以下である。
図11は、上記絶縁膜の製造方法によって得られる回路装置である半導体装置10の一例を説明する断面図である。半導体装置10は、パワーデバイスの一種であるMOSFETである。この場合、基板11は、例えばSiCであり、基板11の裏面側がn+SiCのドレイン層11aとなっており、裏面にドレイン電極39が形成され、基板11の表面側がn-SiCのドリフト層11bとなっており、ドリフト層11bに埋め込まれるようにpSiCの一対のボディ領域24や、n+SiCの一対のソース領域25が形成されている。一対のソース領域25に挟まれたドリフト層11bの局所領域を覆うようにゲート酸化膜(絶縁膜)33が形成され、その上にゲート電極35が形成されている。一対のソース領域25には、配線31が接続されている。ボディ領域24、ソース領域25、ゲート酸化膜33、ゲート電極35等は、図2(A)に示す装置部分11dに相当し、シリコン系絶縁膜212で覆われている。なお、図示を省略しているが、配線31と基板11の表面との間には予め絶縁層を形成することができる。
以上実施形態に即して本発明を説明したが、本発明は、上記の実施形態に限られるものではなく、その要旨を逸脱しない範囲において種々の態様において実施することが可能である。例えば絶縁膜を組み込む対象は、図5に示すMOSFETに限らずIGBTその他のパワーデバイスとすることができ、さらにパワーデバイス以外の各種LSIとすることができ、ディスプレイの各部を構成する要素とすることもできる。
3SiH4+4NH3→Si3N4+12H2
3SiCl2H2+4NH3→Si3N4+6HCl+6H2
この場合も、窒化シリコンの前駆体層112を、例えば密度が5×1014/cm3以上のラジカルを含む高密度プラズマPZに暴露すること、より好ましくは高密度プラズマPZにより形成されるラジカルの照射時間と密度との積が25×1014分・個/cm3以上となるようにラジカル処理することにより、前駆体層112を凝縮させることができ、基板11上に窒化シリコン膜が形成される。ここで、高密度プラズマPZとしてHのラジカルを含むものを用いて水素濃度を低下させる。高密度プラズマPZに暴露された前駆体層112から得た窒化シリコン膜は、ラジカルの影響で凝縮し絶縁性が高まる。
Claims (12)
- 絶縁膜の製造方法であって、
堆積工程と、加熱工程と、暴露工程とを含み、
前記堆積工程では、基板上に成膜材料を堆積させて成膜材料層を形成し、
前記加熱工程では、前記基板上の前記成膜材料層を85℃以上450℃以下で加熱し、
前記暴露工程では、前記基板上の前記成膜材料層の表面に対して水素のラジカルを含むプラズマを照射することによって、前記成膜材料層の構造中に水素を拡散させ前記成膜材料層の成分と結合させる
絶縁膜の製造方法。 - 請求項1に記載の絶縁膜の製造方法において、
前記プラズマにより形成されるラジカルの照射時間と密度との積が25×1014分・個/cm3以上である
絶縁膜の製造方法。 - 請求項1及び2のいずれか一項に記載の絶縁膜の製造方法において、
前記ラジカルは、5Pa以上50Pa以下の圧力下でプラズマを立てることにより前記成膜材料層の表面に供給される
絶縁膜の製造方法。 - 請求項1~3のいずれか一項に記載の絶縁膜の製造方法において、
前記ラジカルは、水素原子Hである
絶縁膜の製造方法。 - 請求項1~4に記載の絶縁膜の製造方法において、
前記成膜材料は、SOGであり、
前記SOGを前記基板上に塗布して堆積させる
絶縁膜の製造方法。 - 請求項5に記載の絶縁膜の製造方法において、
前記SOGは、はしご型ハイドロゲンシルセスキオキサンと、ハイドロゲンシロキサンと、シリケートとのうちの1つ以上である
絶縁膜の製造方法。 - 請求項6に記載の絶縁膜の製造方法において、
前記加熱は、N2又は不活性ガスの雰囲気中で行われる
絶縁膜の製造方法。 - 請求項5に記載の絶縁膜の製造方法において、
前記SOGは、シラザンである
絶縁膜の製造方法。 - 請求項8に記載の絶縁膜の製造方法において、
前記加熱は、H2O、O2と、H2O2のいずれかの雰囲気中で行われる
絶縁膜の製造方法。 - 請求項1~8のいずれか1項に記載の絶縁膜の製造方法において、
前記基板は、半導体基板又は半導体装置のパターン付き基板である
絶縁膜の製造方法。 - 基板上に形成された絶縁膜を備える回路装置であって、
膜中水素濃度が1%以下である絶縁膜を備える回路装置。 - 請求項11に記載の回路装置であって、
水素濃度に関して、基板側で飽和し表面側で略ゼロとなる濃度パターンを複数繰り返す特性を有する
回路装置。
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07115136A (ja) * | 1993-10-20 | 1995-05-02 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP2000332010A (ja) * | 1999-03-17 | 2000-11-30 | Canon Sales Co Inc | 層間絶縁膜の形成方法及び半導体装置 |
JP2001085420A (ja) * | 1999-09-09 | 2001-03-30 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2006222171A (ja) * | 2005-02-09 | 2006-08-24 | Fujitsu Ltd | 絶縁膜の形成方法、多層構造の形成方法および半導体装置の製造方法 |
JP2007227720A (ja) * | 2006-02-24 | 2007-09-06 | Fujitsu Ltd | 半導体装置とその製造方法 |
JP2007335450A (ja) * | 2006-06-12 | 2007-12-27 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2009010043A (ja) * | 2007-06-26 | 2009-01-15 | Tokyo Electron Ltd | 基板処理方法,基板処理装置,記録媒体 |
JP2011139047A (ja) * | 2009-12-04 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 表示装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04116825A (ja) * | 1990-09-06 | 1992-04-17 | Fujitsu Ltd | 半導体装置の製造方法 |
US20130288485A1 (en) | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07115136A (ja) * | 1993-10-20 | 1995-05-02 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP2000332010A (ja) * | 1999-03-17 | 2000-11-30 | Canon Sales Co Inc | 層間絶縁膜の形成方法及び半導体装置 |
JP2001085420A (ja) * | 1999-09-09 | 2001-03-30 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2006222171A (ja) * | 2005-02-09 | 2006-08-24 | Fujitsu Ltd | 絶縁膜の形成方法、多層構造の形成方法および半導体装置の製造方法 |
JP2007227720A (ja) * | 2006-02-24 | 2007-09-06 | Fujitsu Ltd | 半導体装置とその製造方法 |
JP2007335450A (ja) * | 2006-06-12 | 2007-12-27 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2009010043A (ja) * | 2007-06-26 | 2009-01-15 | Tokyo Electron Ltd | 基板処理方法,基板処理装置,記録媒体 |
JP2011139047A (ja) * | 2009-12-04 | 2011-07-14 | Semiconductor Energy Lab Co Ltd | 表示装置 |
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