JP5065054B2 - 制御された二軸応力を有する超低誘電率膜および該作製方法 - Google Patents
制御された二軸応力を有する超低誘電率膜および該作製方法 Download PDFInfo
- Publication number
- JP5065054B2 JP5065054B2 JP2007557020A JP2007557020A JP5065054B2 JP 5065054 B2 JP5065054 B2 JP 5065054B2 JP 2007557020 A JP2007557020 A JP 2007557020A JP 2007557020 A JP2007557020 A JP 2007557020A JP 5065054 B2 JP5065054 B2 JP 5065054B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- low
- dielectric
- ppm
- ultra
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims description 59
- 229910052760 oxygen Inorganic materials 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 33
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 25
- 239000001301 oxygen Substances 0.000 claims description 25
- 230000008021 deposition Effects 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 23
- 239000003989 dielectric material Substances 0.000 claims description 17
- 230000001590 oxidative effect Effects 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 16
- 238000010894 electron beam technology Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 150000002430 hydrocarbons Chemical class 0.000 claims description 11
- 239000004215 Carbon black (E152) Substances 0.000 claims description 10
- 229930195733 hydrocarbon Natural products 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 10
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 4
- 230000001747 exhibiting effect Effects 0.000 claims 2
- 238000001816 cooling Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 117
- 239000007789 gas Substances 0.000 description 65
- 238000000137 annealing Methods 0.000 description 54
- 239000011810 insulating material Substances 0.000 description 40
- 239000004020 conductor Substances 0.000 description 25
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 23
- 239000002243 precursor Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910052734 helium Inorganic materials 0.000 description 12
- 238000005452 bending Methods 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052756 noble gas Inorganic materials 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 230000003247 decreasing effect Effects 0.000 description 7
- NBBQQQJUOYRZCA-UHFFFAOYSA-N diethoxymethylsilane Chemical compound CCOC([SiH3])OCC NBBQQQJUOYRZCA-UHFFFAOYSA-N 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- -1 methylsiloxane Chemical class 0.000 description 6
- 239000003870 refractory metal Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910018557 Si O Inorganic materials 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 238000001723 curing Methods 0.000 description 5
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- POFFJVRXOKDESI-UHFFFAOYSA-N 1,3,5,7-tetraoxa-4-silaspiro[3.3]heptane-2,6-dione Chemical compound O1C(=O)O[Si]21OC(=O)O2 POFFJVRXOKDESI-UHFFFAOYSA-N 0.000 description 4
- 238000003848 UV Light-Curing Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000012705 liquid precursor Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- 229910008045 Si-Si Inorganic materials 0.000 description 3
- 229910006411 Si—Si Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 150000002835 noble gases Chemical class 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical group C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 2
- 238000010336 energy treatment Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 239000012074 organic phase Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- GJEZBVHHZQAEDB-UHFFFAOYSA-N 6-oxabicyclo[3.1.0]hexane Chemical compound C1CCC2OC21 GJEZBVHHZQAEDB-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000002619 bicyclic group Chemical group 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- DGXPASZXUJQWLQ-UHFFFAOYSA-N diethyl(methoxy)silane Chemical compound CC[SiH](CC)OC DGXPASZXUJQWLQ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PESLMYOAEOTLFJ-UHFFFAOYSA-N ethoxymethylsilane Chemical compound CCOC[SiH3] PESLMYOAEOTLFJ-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000007783 nanoporous material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000003361 porogen Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249967—Inorganic matrix in void-containing component
- Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249978—Voids specified as micro
- Y10T428/249979—Specified thickness of void-containing component [absolute or relative] or numerical cell dimension
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
1.フォーミング・ガス・アニール、400℃、14時間。
2.10ppmのO2を有するN2ガス・アニール、400℃、14時間。
3.300ppmのO2を有するN2ガス・アニール、400℃、14時間。
・1700〜1800cm−1の領域の1つまたは2つ以上のピークはさまざまな隣接原子を有するC=Oによる。
・1607cm−1のピークはC=Cによる。
・1460cm−1のピークはSiから離れたCH2による。
・1411cm−1のピークはSiMexのCH3による。
・1378cm−1のピークはSiCH2SiのCH2による。
・2241および2172cm−1のピークはそれぞれHSiO3およびHSiO2Siによる。
・条件1〜3でアニールすると、
o膜の中のCHx含量は減少し、細孔源(porogen)の減少を示す。
oSiOSi結合全含量は増加し、架橋が増加したことを示す。
oSiCH3変角振動(bend)の強度は増加し、多孔度(多孔率)が増加し、その結果、振動の遮蔽が減少したことを意味する。
・条件1、フォーミング・ガス中、400℃、14時間、または条件2、10ppmのO2を有するN2ガス中、400℃、14時間、でアニールすると
oネットワーク・ピーク強度はほとんど同じであった。これは、SiOSi結合含量が保持されることを意味する。
o亜酸化物(suboxide)ピーク強度は増加した。これは、Si‐Si架橋形成によって説明される。
oSiHピーク強度は減少した。これは、この部分がSi‐Si架橋反応に関与することを意味する。
oC=Oピーク強度は減少した。これは、細孔源の損失が起こり、C=O結合が減少したことを意味する。
oCH2(無Si)ピーク強度は減少した。これは、細孔源の損失が起こったことを意味する。
oSiCH2Siは消失した。これは、Si‐Si架橋形成によって失われることを意味する。
・条件3、300ppmのO2を有するN2ガス中、400℃、14時間、でアニールすると、
oSiOSiネットワーク・ピーク強度は増加した。これは、より多くのSiOSi結合が形成されたことを意味する。
oSiOSi亜酸化物ピーク強度は減少した。これは、これらのアニールによってより多くのSiOSi結合が形成され、O以外のXを有するSiX結合が除去されたことを意味する。
o全SiHピーク強度は減少し、一方、HSiO2Siによるピークは完全に消失した。これは、新しいSiOSi架橋結合の生成に結びつけることができる。
oC=Oピーク強度は増加した。これは、SiCOH中の有機成分の酸化が起こったことを意味する。
oCH2(無Si)ピーク強度は増加した。これは、細孔源が膜の中に捕捉されたことを意味する
oSiCH2Siピーク強度は保持された。
・条件3、300ppmのO2を有するN2ガス中、400℃、14時間、または条件2、10ppmのO2を有するN2ガス中、400℃、14時間、でアニールすると、おそらく炭酸塩形成によって、C=Cピーク強度は増加する。これとは反対に、条件1、純フォーミング・ガス中、400℃、14時間、でアニールした膜の中では、C=Cピークは同じままであるか、または減少する。
32 シリコン基板またはシリコン含有基板
34 第1の絶縁材料層
36 第1の金属領域
38 第1の超低k膜
40 第1の導体層
44 第2の超低k膜
50 第2の導体領域
60 電子デバイス
62 誘電体キャップ層
70 電子デバイス
72 誘電体キャップ層
74 誘電体キャップ層
80 電子デバイス
82 誘電体層(エッチング停止層)
84 絶縁材料層
86 絶縁材料層
92 相互接続部
94 相互接続部
96 拡散障壁層
Claims (14)
- Si、C、OおよびHの原子を含む超低誘電率膜であって、共有結合による三次元ネットワーク構造体と、2.8以下の誘電率と、直径が0.5乃至30ナノメートル分子スケールの空洞を有する制御された多孔体であって、前記分子スケールの空洞は5%乃至40%の体積を占める前記多孔体と、を有し、46MPa未満の二軸応力を示す超低誘電率膜。
- 前記膜の前記二軸応力は、40MPa以下である、請求項1に記載の膜。
- 前記膜の前記二軸応力は、堆積後の未硬化の膜の応力プラス5MPa以下である、請求項1に記載の膜。
- 前記膜は、2.8以下の誘電率を有する、請求項1に記載の膜。
- 前記膜は、1.5から2.8の範囲の誘電率を有する、請求項1に記載の膜。
- 前記膜は、5から40原子パーセントのSiと、5から45原子パーセントのCと、0から50原子パーセントのOと、10から55原子パーセントのHと、を含む請求項1に記載の膜。
- Si、C、OおよびHの原子を含む誘電体材料を少なくとも含む電子構造体であって、前記誘電体材料は、共有結合による三次元ネットワーク構造体と、2.8以下の誘電率と、直径が0.5乃至30ナノメートル分子スケールの空洞を有する制御された多孔体であって、前記分子スケールの空洞は5%乃至40%の体積を占める前記多孔体と、46MPaおよび前記堆積後の未硬化の材料の応力プラス5MPaのどちらよりも高くない制御された二軸応力と、を有する電子構造体。
- 前記誘電体材料は、後工程相互接続配線レベル間、BEOL相互接続配線レベル内、キャップ層、ハード・マスク、CMP停止層およびエッチング停止層の一つにおいて用いられる、請求項7に記載の電子構造体。
- Si、C、OおよびHの元素を含み、低く、制御可能な二軸応力を示す超低誘電率膜を作製するための方法であって、
プラズマ促進化学的気相堆積法とスピン・コーティングとからなる群から選ばれたプロセスによって基板の上に前記膜を堆積する工程と、
前記堆積後の膜と、前記堆積後の膜を上に形成した基板とを、前記堆積後の膜を周囲雰囲気に暴露する前に、0から10ppmの範囲の制御された非常に低い酸素濃度を含む非酸化性環境中で放冷する工程と、
それぞれ0から10ppmの範囲の制御された非常に低い濃度の酸素と水とを含む環境中で前記堆積後の膜を硬化する工程と、
を含む方法。 - 前記硬化する工程は、それぞれ0から10ppmの範囲の制御された非常に低い濃度の酸素または水を含む環境中で、熱、電子線、プラズマ、UV、DUVまたはレーザを含む群から選ばれた一つ以上のエネルギー源に前記膜をもう一度曝露することをさらに含む、請求項9に記載の方法。
- 前記膜を、UV処理または電子線処理してから、同じ環境中で室温まで放冷する、請求項9に記載の方法。
- Si、C、OおよびHの元素を含み、低く、制御可能な二軸応力を示す超低誘電率膜を作製するための一体型プラズマ促進化学的気相堆積法の硬化ツールであって、
プラズマ促進化学的気相堆積法を用いて基板上に前記膜を堆積するプロセス工程と、
0から100ppmの範囲の制御された非常に低い酸素濃度を含む非酸化性環境中のツール中のプロセス領域の間で前記基板を移動するプロセス工程と、
それぞれ0から100ppmの範囲の制御された非常に低い濃度の酸素または水を含む環境中で前記堆積後の膜を硬化するプロセス工程と、
前記基板を周囲雰囲気に暴露する前に、それぞれ0から10ppmの範囲の制御された非常に低い濃度の酸素または水を含む非酸化性環境中で前記基板を放冷するプロセス工程と、
を実行するツール。 - 前記環境は、二重結合基を有し、硬化後の反応部位を不動態化し、SiCOHおよび多孔質SiCOH膜酸化を減らすために10ppm未満の酸素レベルを有する非酸化性炭化水素雰囲気である、請求項12に記載のツール。
- 前記非酸化性炭化水素雰囲気の二重結合基は、エチレンまたは1,3‐ブタジエンを含む、請求項13に記載のツール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/034,479 | 2005-01-13 | ||
US11/034,479 US7357977B2 (en) | 2005-01-13 | 2005-01-13 | Ultralow dielectric constant layer with controlled biaxial stress |
PCT/US2006/001154 WO2007089223A2 (en) | 2005-01-13 | 2006-01-12 | Ultralow dielectric constant layer with controlled biaxial stress |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008527757A JP2008527757A (ja) | 2008-07-24 |
JP2008527757A5 JP2008527757A5 (ja) | 2008-11-27 |
JP5065054B2 true JP5065054B2 (ja) | 2012-10-31 |
Family
ID=38327796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007557020A Expired - Fee Related JP5065054B2 (ja) | 2005-01-13 | 2006-01-12 | 制御された二軸応力を有する超低誘電率膜および該作製方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7357977B2 (ja) |
EP (1) | EP1854131A4 (ja) |
JP (1) | JP5065054B2 (ja) |
CN (1) | CN101548362B (ja) |
TW (1) | TW200636859A (ja) |
WO (1) | WO2007089223A2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7892648B2 (en) * | 2005-01-21 | 2011-02-22 | International Business Machines Corporation | SiCOH dielectric material with improved toughness and improved Si-C bonding |
US7202564B2 (en) * | 2005-02-16 | 2007-04-10 | International Business Machines Corporation | Advanced low dielectric constant organosilicon plasma chemical vapor deposition films |
US20070176292A1 (en) * | 2006-01-27 | 2007-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding pad structure |
JP4675258B2 (ja) * | 2006-02-22 | 2011-04-20 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法および半導体装置 |
JP2008103586A (ja) * | 2006-10-20 | 2008-05-01 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
US8053375B1 (en) * | 2006-11-03 | 2011-11-08 | Advanced Technology Materials, Inc. | Super-dry reagent compositions for formation of ultra low k films |
JP5140290B2 (ja) * | 2007-03-02 | 2013-02-06 | 富士フイルム株式会社 | 絶縁膜 |
JP5304033B2 (ja) * | 2007-08-31 | 2013-10-02 | 富士通株式会社 | 半導体装置の製造方法 |
US8338315B2 (en) * | 2008-02-26 | 2012-12-25 | Axcelis Technologies, Inc. | Processes for curing silicon based low-k dielectric materials |
JP2010129824A (ja) * | 2008-11-28 | 2010-06-10 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP5565314B2 (ja) * | 2008-12-08 | 2014-08-06 | 富士通株式会社 | 半導体装置の製造方法及びその製造装置 |
WO2014158448A1 (en) * | 2013-03-14 | 2014-10-02 | Applied Materials, Inc. | Enhancing uv compatibility of low k barrier film |
CN103531463A (zh) * | 2013-10-30 | 2014-01-22 | 苏州大学 | 低表面孔隙低介电常数薄膜材料的制备方法 |
CN104900580B (zh) * | 2014-03-04 | 2018-05-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
EP3367425A1 (en) * | 2017-02-28 | 2018-08-29 | IMEC vzw | A method for direct bonding of semiconductor substrates |
US11038153B2 (en) | 2019-01-15 | 2021-06-15 | Applied Materials, Inc. | Methods for HMDSO thermal stability |
US20230142684A1 (en) * | 2020-12-27 | 2023-05-11 | Applied Materials, Inc. | Single Precursor Low-K Film Deposition and UV Cure for Advanced Technology Node |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1177272B (it) * | 1984-11-20 | 1987-08-26 | Alusuisse Italia Spa | Catalizzatore per reazioni di ossidazione e procedimento per la sua produzione |
US5384156A (en) * | 1993-08-23 | 1995-01-24 | Litton Systems, Inc. | Reversible method of magnetic film annealing |
JP3209072B2 (ja) * | 1996-02-07 | 2001-09-17 | ソニー株式会社 | 絶縁膜の形成方法 |
WO2000013221A1 (en) * | 1998-08-27 | 2000-03-09 | Alliedsignal Inc. | Process for optimizing mechanical strength of nanoporous silica |
JP2001098218A (ja) * | 1999-09-28 | 2001-04-10 | Hitachi Chem Co Ltd | シリカ系被膜、シリカ系被膜の形成方法及びシリカ系被膜を有する電子部品 |
JP3530165B2 (ja) * | 2000-10-20 | 2004-05-24 | 株式会社東芝 | 半導体装置の製造方法 |
US6768200B2 (en) * | 2000-10-25 | 2004-07-27 | International Business Machines Corporation | Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device |
TW477029B (en) * | 2001-02-21 | 2002-02-21 | Nat Science Council | Method of reducing thick film stress of spin on dielectric and the resulting sandwich dielectric structure |
US6716770B2 (en) * | 2001-05-23 | 2004-04-06 | Air Products And Chemicals, Inc. | Low dielectric constant material and method of processing by CVD |
JP2003124207A (ja) * | 2001-10-12 | 2003-04-25 | Hitachi Chem Co Ltd | 被膜、被膜形成用塗布液、被膜の製造方法及びその被膜を有する電子部品 |
JP2003243386A (ja) * | 2002-02-19 | 2003-08-29 | Asahi Kasei Corp | 絶縁膜の製造方法 |
US7404990B2 (en) * | 2002-11-14 | 2008-07-29 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
TWI240959B (en) * | 2003-03-04 | 2005-10-01 | Air Prod & Chem | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
US7030468B2 (en) * | 2004-01-16 | 2006-04-18 | International Business Machines Corporation | Low k and ultra low k SiCOH dielectric films and methods to form the same |
JP2006086280A (ja) * | 2004-09-15 | 2006-03-30 | Seiko Epson Corp | SiOC膜の形成方法およびSiOC膜 |
US7491658B2 (en) * | 2004-10-13 | 2009-02-17 | International Business Machines Corporation | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality |
US7892648B2 (en) * | 2005-01-21 | 2011-02-22 | International Business Machines Corporation | SiCOH dielectric material with improved toughness and improved Si-C bonding |
JP5324734B2 (ja) * | 2005-01-21 | 2013-10-23 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 誘電体材料とその製造方法 |
-
2005
- 2005-01-13 US US11/034,479 patent/US7357977B2/en not_active Expired - Fee Related
-
2006
- 2006-01-09 TW TW095100786A patent/TW200636859A/zh unknown
- 2006-01-12 WO PCT/US2006/001154 patent/WO2007089223A2/en active Application Filing
- 2006-01-12 JP JP2007557020A patent/JP5065054B2/ja not_active Expired - Fee Related
- 2006-01-12 CN CN2006800022767A patent/CN101548362B/zh not_active Expired - Fee Related
- 2006-01-12 EP EP06849665A patent/EP1854131A4/en not_active Withdrawn
-
2008
- 2008-03-07 US US12/044,334 patent/US20080286494A1/en not_active Abandoned
-
2009
- 2009-08-17 US US12/542,287 patent/US20090304951A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2007089223A2 (en) | 2007-08-09 |
US7357977B2 (en) | 2008-04-15 |
JP2008527757A (ja) | 2008-07-24 |
EP1854131A2 (en) | 2007-11-14 |
CN101548362B (zh) | 2012-10-03 |
WO2007089223A3 (en) | 2007-11-01 |
TW200636859A (en) | 2006-10-16 |
US20090304951A1 (en) | 2009-12-10 |
CN101548362A (zh) | 2009-09-30 |
US20080044668A1 (en) | 2008-02-21 |
EP1854131A4 (en) | 2011-03-30 |
US20080286494A1 (en) | 2008-11-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5065054B2 (ja) | 制御された二軸応力を有する超低誘電率膜および該作製方法 | |
JP2008527757A5 (ja) | ||
JP4755831B2 (ja) | 低誘電率および超低誘電率のSiCOH誘電体膜ならびにその形成方法 | |
JP4410783B2 (ja) | 低誘電率膜を作製する方法 | |
US7312524B2 (en) | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made | |
JP5466365B2 (ja) | 基板上にSiCOH誘電体を形成する方法 | |
US7998880B2 (en) | Low k dielectric CVD film formation process with in-situ imbedded nanolayers to improve mechanical properties | |
KR100724508B1 (ko) | 초저 K(ULK) SiCOH 막 및 그 형성 방법 | |
JP5102618B2 (ja) | SiCOH誘電体膜を形成する方法 | |
JP2009010400A (ja) | Uv照射による高密度及び多孔質有機ケイ酸塩材料の機械的強化 | |
JP2013520841A (ja) | プラズマ化学気相堆積による、有機官能基と共にシリコンを含有するハイブリッド前駆体を使用する超低誘電材料 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081008 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20081008 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110722 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110726 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111017 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120724 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120809 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150817 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |