JP2022023154A - 発光素子パッケージ - Google Patents
発光素子パッケージ Download PDFInfo
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- JP2022023154A JP2022023154A JP2021171970A JP2021171970A JP2022023154A JP 2022023154 A JP2022023154 A JP 2022023154A JP 2021171970 A JP2021171970 A JP 2021171970A JP 2021171970 A JP2021171970 A JP 2021171970A JP 2022023154 A JP2022023154 A JP 2022023154A
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- light emitting
- emitting element
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- 239000000758 substrate Substances 0.000 description 118
- 239000000919 ceramic Substances 0.000 description 96
- 239000010949 copper Substances 0.000 description 61
- 229910045601 alloy Inorganic materials 0.000 description 49
- 239000000956 alloy Substances 0.000 description 49
- 229910052802 copper Inorganic materials 0.000 description 47
- 239000004065 semiconductor Substances 0.000 description 44
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 43
- 239000000126 substance Substances 0.000 description 28
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- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 13
- 238000000465 moulding Methods 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 11
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- 238000003780 insertion Methods 0.000 description 10
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- 229910052721 tungsten Inorganic materials 0.000 description 10
- 229910016525 CuMo Inorganic materials 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
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- 230000000903 blocking effect Effects 0.000 description 5
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 5
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- 230000005855 radiation Effects 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- 229960001296 zinc oxide Drugs 0.000 description 5
- 238000010292 electrical insulation Methods 0.000 description 4
- 239000000284 extract Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000008602 contraction Effects 0.000 description 3
- 238000003912 environmental pollution Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- -1 Indium-Aluminum-Zinc Chemical compound 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910002668 Pd-Cu Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- H01L2224/3201—Structure
- H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
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- H01L2924/12032—Schottky diode
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- Inorganic Chemistry (AREA)
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- Fastening Of Light Sources Or Lamp Holders (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
210 パッケージ本体
220 放熱部
230 発光素子
240 モールディング部
Claims (20)
- 発光素子が配置される第1電極パターンと、
前記第1電極パターンと第1方向に離隔配置される第2-1電極パターンと、
前記第1電極パターンと前記第1方向と垂直な第2方向に離隔配置される第2-2電極パターンと、を含み、
前記第1電極パターンは、前記発光素子が配置される中央領域で前記第1方向の第1幅を有し、
前記第1電極パターンは、前記発光素子が配置されない周辺領域で前記第1方向の第2幅を有し、
前記第1幅が前記第2幅より大きく、
前記第1電極パターンは、前記発光素子が配置される中央領域で前記第2方向の第3幅を有し、
前記第1電極パターンは、前記発光素子が配置されない周辺領域で前記第2方向の第4幅を有し、
前記第3幅が前記第4幅より大きく、
前記第2-1電極パターンは、前記第1方向における幅が相互異なる領域を含む、発光素子パッケージ。 - 前記第2-1電極パターンの前記第1方向における最小幅を有する第2-1領域は、前記第1電極パターンにおいて前記第1幅を有する第1-1領域と前記第1方向に重なる、請求項1に記載の発光素子パッケージ。
- 前記第2-2電極パターンは、前記第2方向における幅が相互異なる領域を含み、
前記第2-2電極パターンの前記第2方向において最大幅を有する第2-2領域は、前記第1電極パターンにおいて前記第3幅を有する第1-2領域と前記第2方向に重なる、請求項2に記載の発光素子パッケージ。 - 前記第1電極パターンの前記第1方向の第2幅は、前記第2-1電極パターンの前記第1方向における幅より大きい、請求項1から3のいずれか一項に記載の発光素子パッケージ。
- 前記第1電極パターンの前記第2方向の第4幅は、前記第2-2電極パターンの前記第2方向における幅より大きい、請求項3に記載の発光素子パッケージ。
- 前記第1電極パターンは、複数形成され、同じ形状を有する、請求項1から5のいずれか一項に記載の発光素子パッケージ。
- 前記第1電極パターンと前記第1方向に離隔配置された第2-4、第2-5及び第2-8電極パターンと、
前記第1電極パターンと前記第2方向に離隔配置された第2-3、第2-6及び第2-7電極パターンと、を含み、
前記第2-1電極パターンと前記第2-8電極パターン、前記第2-2電極パターンと前記第2-3電極パターン、前記第2-4電極パターンと前記第2-5電極パターン、前記第2-6電極パターンと前記第2-7電極パターンのうちの少なくとも一つは相互線対称である、請求項6に記載の発光素子パッケージ。 - 前記第2-1電極パターンと前記第2-2電極パターン、前記第2-3電極パターンと前記第2-4電極パターン、前記第2-5電極パターンと前記第2-6電極パターン、前記第2-7電極パターンと前記第2-8電極パターンのうちの少なくとも一つは一体形成される、請求項7に記載の発光素子パッケージ。
- 前記複数の第1電極パターンのうちの少なくとも二つは線対称である、請求項6から8のいずれか一項に記載の発光素子パッケージ。
- 前記第2-1電極パターンと前記第2-8電極パターンの間及び前記第2-4電極パターンと前記第2-5電極パターンの間にそれぞれ配置された複数の第3電極パターンを含み、
前記複数の第3電極パターンは、前記第1方向に相互重なる、請求項9に記載の発光素子パッケージ。 - 前記第2-1電極パターンと前記第2-8電極パターン及び前記第2-4電極パターンと前記第2-5電極パターンのそれぞれは、前記複数の第3電極パターンのうちの少なくとも一つを基準に対称である、請求項10に記載の発光素子パッケージ。
- 前記複数の第3電極パターンのいずれか一つの上に配置された保護素子を含む、請求項11に記載の発光素子パッケージ。
- 前記保護素子は、ツェナーダイオードを含む、請求項12に記載の発光素子パッケージ。
- 前記第2-2電極パターンと前記第2-3電極パターンの間及び前記第2-6電極パターンと前記第2-7電極パターンの間にそれぞれ配置された複数の第4電極パターンを含み、
前記複数の第4電極パターンは、前記第1方向に相互重なる、請求項10に記載の発光素子パッケージ。 - 前記第2-2電極パターンと前記第2-3電極パターン及び前記第2-6電極パターンと前記第2-7電極パターンのそれぞれは、前記複数の第4電極パターンのうちの少なくとも一つを基準に対称である、請求項14に記載の発光素子パッケージ。
- 前記複数の第4電極パターンのうちの一つは、前記複数の第1電極パターンのうちの少なくとも一つと電気的に連結される、請求項15に記載の発光素子パッケージ。
- 前記複数の第4電極パターンのうちの一つは、前記複数の第1電極パターンのうちの一つと一体形成される、請求項15に記載の発光素子パッケージ。
- 前記第2-1電極パターンは、前記第1方向に相互異なる水平幅を有する複数の領域を有し、
前記第2-2電極パターンは、前記第2方向に相互異なる水平幅を有する複数の領域を
有し、
前記第2-1電極パターンの前記第1方向の水平幅のいずれか一つは、前記第2-2電極パターンの前記第2方向の水平幅のいずれか一つより大きい、請求項7から17のいずれか一項に記載の発光素子パッケージ。 - 前記第2-2電極パターンの前記第2方向の水平幅のいずれか一つは、前記第2-1電極パターンの前記第1方向の水平幅のいずれか一つより大きい、請求項18に記載の発光素子パッケージ。
- 請求項1から19のいずれか一項に記載の発光素子パッケージを有する照明装置。
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JP6626161B2 (ja) | 2019-12-25 |
JP2019036753A (ja) | 2019-03-07 |
CN107425103B (zh) | 2019-12-27 |
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JP6005440B2 (ja) | 2016-10-12 |
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JP6969806B2 (ja) | 2021-11-24 |
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US9634215B2 (en) | 2017-04-25 |
USRE48858E1 (en) | 2021-12-21 |
US20140225151A1 (en) | 2014-08-14 |
CN107425103A (zh) | 2017-12-01 |
US20130049564A1 (en) | 2013-02-28 |
JP2018190990A (ja) | 2018-11-29 |
US9196814B2 (en) | 2015-11-24 |
JP6691952B2 (ja) | 2020-05-13 |
JP2013046071A (ja) | 2013-03-04 |
JP6567482B2 (ja) | 2019-08-28 |
US8704433B2 (en) | 2014-04-22 |
JP6437154B2 (ja) | 2018-12-12 |
US20160043296A1 (en) | 2016-02-11 |
JP2018186284A (ja) | 2018-11-22 |
CN103078040B (zh) | 2016-12-21 |
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