CN104465975A - 一种功率型led集成封装结构 - Google Patents

一种功率型led集成封装结构 Download PDF

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CN104465975A
CN104465975A CN201410796210.6A CN201410796210A CN104465975A CN 104465975 A CN104465975 A CN 104465975A CN 201410796210 A CN201410796210 A CN 201410796210A CN 104465975 A CN104465975 A CN 104465975A
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led chip
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黄克亚
尤凤翔
陈畅
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Abstract

本发明公开了一种功率型LED集成封装结构，包括散热热管，CuW热沉，Si基板，LED芯片和蓝宝石，所述散热热管设置在所述结构的最底端，所述散热热管的上方设置有所述CuW热沉，所述CuW热沉上方设置有所述Si基板，所述Si基板上方设置有所述LED芯片，所述LED芯片的上方设置有所述蓝宝石。采用本发明技术方案，增加了芯片的电流密度；进一步提高了散热效果；银反光层消除了电极和引线的挡光，因此这种结构具有电、光、热等方面最优的特性。

Description

一种功率型LED集成封装结构
技术领域
本发明涉及LED封装的光学、热学、电学、力学、结构与工艺等技术领域，具体涉及一种功率型LED集成封装结构。
背景技术
随着照明技术的发展，大功率白光LED将是未来照明的核心。白光LED作为新型光源，与传统光源相比具有寿命长、体积小、节能、高效、响应速度快、抗震、无污染等优点，被认为是可以进入普通照明领域的“绿色照明光源”，尤其是大功率白光LED的诞生被业界称为“照明领域的第四次革命”，LED大规模应用于普通照明是一个必然的趋势。
目前，很多大功率LED的驱动电流达到350mA、700mA、甚到1A，这将会引起芯片内部热量聚集，导致发光波长漂移、出光效率下降、荧光粉加速老化以及使用寿命缩短等一系列问题。业内已经对大功率LED的散热问题做出了很多的努力：通过对芯片外延结构优化设计，使用表面粗化技术等提高芯片内外量子效率，减少无辐射复合产生的晶格振荡，从根本上减少了散热组件负荷；通过优化封装结构、材料，选择使用以铝基为主的金属芯印刷电路板、陶瓷、复合金属基板等方法，加快热量从外延层向散热基板散发。多数厂家还在高性能要求场合中使用散热片，依靠强对流散热等方法促进大功率LED散热。尽管如此，单个LED产品目前也仅处于1～10W级的水平，散热能力仍待提高。
另外，选择氮化镓作为制作LED芯片材料，以氮化镓为代表的第三代半导体材料是近十几年来国际上备受重视的半导体材料，在白光LED、短波长激光器、紫外探测器以及高温大功率器件中具有广泛的应用前景。用于氮化镓生长的最理想的衬底自然是氮化镓单晶材料，它可以大大提高外延膜的晶体质量，降低位错密度，提高器件工作寿命，提高发光效率，提高器件工作电流密度。
以及选择钨铜合金作为集成封装结构的热沉，因为其既具有钨的低膨胀特性，又具有铜的高导热特性，其热膨胀系数和导热导电性能可以通过调整钨铜的成分而加以改变，因而给钨铜提供了更广的应用范围。由于钨铜材料具有很高的耐热性和良好的导热导电性，同时又与硅片、砷化镓及陶瓷材料相匹配的热膨胀系数，因此在半导体材料中得到广泛的应用。
发明内容
为克服现有技术中的不足，本发明的目的在于提供一种功率型LED集成封装结构，应用于照明用大功率LED的生产和设计，该结构具有电、光、热等方面的最优特性，有效地提高了LED的性能和光效。
为实现上述技术目的，达到上述技术效果，本发明通过以下技术方案实现：
一种功率型LED集成封装结构，包括散热热管，CuW热沉，Si基板，LED芯片和蓝宝石，所述散热热管设置在所述结构的最底端，所述散热热管的上方设置有所述CuW热沉，所述CuW热沉上方设置有所述Si基板，所述Si基板上方设置有所述LED芯片，所述LED芯片的上方设置有所述蓝宝石。
进一步的，所述LED芯片包括P电极和N电极，所述P电极和N电极的下方分别设置有一个金属凸点，且所述Si基板和所述LED芯片的外侧通过金线连接，在所述P电极和PN结之间设置有银光反层。
与现有技术相比，本发明具有以下有益效果：
本发明技术方案，光从蓝宝石衬底中取出，不必从电流扩散层取出，由于不从电流扩散层取光，不透光的电流扩散层可以加厚，增加了芯片的电流密度；同时，这种结构还可以将PN结的热量直接通过金属凸点传导给热导率高的Si基板和CuW热沉，热管技术的应用更进一步提高了散热效果；银反光层消除了电极和引线的挡光，因此这种结构具有电、光、热等方面最优的特性。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，并可依照说明书的内容予以实施，以下以本发明的较佳实施例并配合附图详细说明如后。本发明的具体实施方式由以下实施例及其附图详细给出。
附图说明
此处所说明的附图用来提供对本发明的进一步理解，构成本申请的一部分，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：
图1为本发明的集成封装结构的总体结构框图。
图中标号说明：1、散热热管，2、CuW热沉，3、Si基板，4、金线，5、金属凸点，6、LED芯片，7、银反光层，8、蓝宝石。
具体实施方式
下面将参考附图并结合实施例，来详细说明本发明。
参照图1所示，一种功率型LED集成封装结构，包括散热热管1，CuW热沉2，Si基板3，LED芯片6和蓝宝石8，所述散热热管1设置在所述结构的最底端，所述散热热管1的上方设置有所述CuW热沉2，所述CuW热沉2上方设置有所述Si基板3，所述Si基板3上方设置有所述LED芯片6，所述LED芯片6的上方设置有所述蓝宝石8。
进一步的，所述LED芯片6包括P电极和N电极，所述P电极和N电极的下方分别设置有一个金属凸点5，且所述Si基板3和所述LED芯片6的外侧通过金线4连接，在所述P电极和PN结之间设置有银光反层7。
本发明的工作原理：
在这种结构中，光从蓝宝石8衬底中取出，不必从电流扩散层取出，由于不从电流扩散层取光，不透光的电流扩散层可以加厚，增加了LED芯片6的电流密度。同时，这种结构还可以将PN结的热量直接通过金属凸点5传导给热导率高的Si基板3和CuW热沉2，热管技术的应用更进一步提高了散热效果。而且在PN结和P电极之间的银反光层7，又消除了电极和引线的挡光，因此这种结构具有电、光、热等方面最优的特性。
封装结构采用倒装芯片技术，发光层(发光源)距离封装一侧较近，因此，容易将LED芯片6的热量散发到封装侧。另外，采用倒装芯片安装方法安装LED芯片6，其发光层的光射出外部时，不会受到电极的遮蔽。尤其是采用蓝宝石底板的LED等只在LED芯片一面设置电极的产品，其效果更为明显。通过倒装芯片安装的LED的发光效率，与采用引线键合的安装相比，可提高10％。
封装结构选择硅片作为氮化镓材料的衬底，其具有许多优点，如晶体质量高，尺寸大，成本低，易加工，良好的导电性、导热性和稳定性等。硅衬底的芯片电极采用垂直接触方式，使电流可以纵向流动，因此大大增加了LED发光面积，从而提高了LED的出光效率。因为硅是热的良导体，所以器件的导热性可以明显改善，从而延长了器件的寿命。
选择热管散热作为集成封装结构的散热方式，以快速将芯片传导出来的热量散发出去。热管散热不仅结构简单，其导热性能比铜棒还要优秀，具有“超导体”美誉。典型的热管由管壳和吸液芯组成，热管内工作介质在蒸发段吸热产生相变蒸汽，以管内压差为动力流向冷凝段，放热冷凝成液体，吸附在吸液芯内，以吸液芯中的毛细力为动力回流至蒸发段，实现循环散热。相对于其它散热方式，热管技术具有无额外动力需求、技术成熟、散热性能高等特点。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (2)

1.一种功率型LED集成封装结构，包括散热热管(1)，CuW热沉(2)，Si基板(3)，LED芯片(6)和蓝宝石(8)，其特征在于，所述散热热管(1)设置在所述结构的最底端，所述散热热管(1)的上方设置有所述CuW热沉(2)，所述CuW热沉(2)上方设置有所述Si基板(3)，所述Si基板(3)上方设置有所述LED芯片(6)，所述LED芯片(6)的上方设置有所述蓝宝石(8)。
2.根据权利要求1所述的功率型LED集成封装结构，其特征在于，所述LED芯片(6)包括P电极和N电极，所述P电极和N电极的下方分别设置有一个金属凸点(5)，且所述Si基板(3)和所述LED芯片(6)的外侧通过金线(4)连接，在所述P电极和PN结之间设置有银光反层(7)。
CN201410796210.6A 2014-12-18 2014-12-18 一种功率型led集成封装结构 Pending CN104465975A (zh)

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US20060192222A1 (en) * 2004-12-08 2006-08-31 Jyh-Chen Chen Light emitting device
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CN101043809A (zh) * 2006-03-23 2007-09-26 创新陶瓷工程技术公司 用于元件或电路的承载体
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CN101673802A (zh) * 2009-09-27 2010-03-17 上海大学 集成金属基氮化铝薄膜基板与热管的大功率led模块及其制备方法
CN201570516U (zh) * 2009-11-30 2010-09-01 杜姬芳 一种led封装结构
CN103078040A (zh) * 2011-08-22 2013-05-01 Lg伊诺特有限公司 发光器件封装件和光装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060192222A1 (en) * 2004-12-08 2006-08-31 Jyh-Chen Chen Light emitting device
CN101043809A (zh) * 2006-03-23 2007-09-26 创新陶瓷工程技术公司 用于元件或电路的承载体
CN1971952A (zh) * 2006-11-15 2007-05-30 重庆邮电大学 大功率led芯片倒焊装方法
US20090236729A1 (en) * 2006-11-15 2009-09-24 Industrial Technology Research Institute Melting temperature adjustable metal thermal interface materials and packaged semiconductors including thereof
CN101673802A (zh) * 2009-09-27 2010-03-17 上海大学 集成金属基氮化铝薄膜基板与热管的大功率led模块及其制备方法
CN201570516U (zh) * 2009-11-30 2010-09-01 杜姬芳 一种led封装结构
CN103078040A (zh) * 2011-08-22 2013-05-01 Lg伊诺特有限公司 发光器件封装件和光装置

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