CN101567366A - 发光二极管 - Google Patents
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Abstract
本发明提供一种发光二极管,其包括一基板、多个发光二极管晶粒、一混光装置以及一封装体。该多个发光二极管晶粒设置在基板上。该混光装置由透光材料制成且该混光装置内掺杂有散射粒子,该混光装置位于基板上并环绕该多个发光二极管晶粒设置。该封装体设置在该基板上并包覆该混光装置及多个发光二极管晶粒。该种发光二极管具有混光均匀的特点。
Description
技术领域
本发明涉及一种发光二极管,尤其是一种采用多个具有不同发光波长的发光二极管晶粒进行混光的发光二极管。
背景技术
采用半导体发光元件制作的发光二极管(LED,Light Emitting Diode)以其亮度高、工作电压低、功耗小、易与集成电路匹配、驱动简单、寿命长等优点,从而可作为光源而广泛应用于照明领域,可参见Joseph Bielecki等人在23rd IEEE SEMI-THERM Symposium中的Thermal Considerations for LED Components in an Automotive Lamp一文。
为满足各种环境的不同照明需求,通常采用混光机制获得预定颜色的光。例如,常见的发光二极管产生白光的机制一般包括以下几种:1.采用蓝色发光二极管晶粒产生蓝光,再配合使用黄色荧光粉,通过所述蓝光激发黄色荧光粉发光,进而混光形成白光;2.采用紫外发光二极管晶粒产生紫外光,再配合使用红、绿、蓝三色荧光粉,通过所述紫外光激发红、绿、蓝荧光粉发光,进而混光形成白光;3.采用蓝色、绿色、红色发光二极管晶粒分别产生蓝光、绿光、红光,三种颜色的光进而混成白光。
然而,采用上述第三种方法产生白光时,由于三种颜色的发光二极管晶粒不可能同时设置在发光二极管的中心位置,从而各发光二极管晶粒发出的不同颜色的光不能充分混合,其具有混光不均匀的缺点。
有鉴于此,提供一种混光均匀的发光二极管实为必要。
发明内容
以下将以具体实施例说明一种混光均匀的发光二极管。
一种发光二极管,其包括一基板、多个发光二极管晶粒、一混光装置以及一封装体,该多个发光二极管晶粒设置位于基板上;该混光装置位于基板上并环绕该多个发光二极管晶粒设置,该混光装置由透光材料制成且该混光装置的实体内部掺杂有散射粒子;该封装体设置在该基板上并包覆该混光装置及多个发光二极管晶粒。
所述发光二极管将混光装置环绕发光二极管晶粒设置,并在混光装置实体内部掺杂有散射粒子,该多个发光二极管晶粒发出光线可入射至混光装置实体内部并被散射粒子散射,该散射粒子可破坏各发光二极管晶粒所发出光线的方向性,从而使得来自各发光二极管晶粒的光线在封装体内部充分混光,从而该发光二极管所发出的光具有良好的均匀性。
附图说明
图1是本发明第一实施例提供的发光二极管结构示意图。
图2是本发明第二实施例提供的发光二极管结构示意图。
图3是本发明实施例提供的混光装置内壁为具有单一曲率半径的曲面的发光二极管结构示意图。
图4是本发明实施例提供的混光装置内壁为由多个曲率半径不同的曲面相连而成的几何面的发光二极管结构示意图。
具体实施方式
以下将结合附图对本发明实施例作进一步详细说明。
参见图1,本发明实施例提供的一种发光二极管10,其包括一基板11、一混光装置12、多个发光二极管晶粒13以及一封装体14。该混光装置12、多个发光二极管晶粒13以及一封装体14均设置在基板11上。
该基板11用于承载混光装置12及发光二极管晶粒13。该基板11上设置有电路层110。该基板11可为玻璃纤维板(FR4)、金属核心印刷电路板(Metal Core PCB,MCPCB)、陶瓷基底(Ceramic Substrate)、硅基板(Silicon Substrate)、陶瓷铝基板(Ceramic AluminumSubstrate)。
该混光装置12环绕该发光二极管晶粒13设置。该混光装置12由透光材料制成,如玻璃(Glass)、聚碳酸酯(Polycarbonate,PC)、聚甲基丙烯酸甲酯(Polymethylmethacrylate,PMMA)、硅树脂(Silicone)或环氧树脂(Epoxy Resin)等。该混光装置12内部掺杂有散射粒子122,该散射粒子122的折射率位于1.1至2.4之间,其材质可为二氧化钛(TiO2)、熔炼石英(Fused Silica)、聚碳酸酯(Polycarbonate,PC)、聚甲基丙烯酸甲酯(Polymethylmethacrylate,PMMA)、氧化铝(Al2O3)、氧化镁(MgO)、硅铝氧氮聚合材料(Sialon)或透明氧氮化物(Oxynitride)等。优选的,该散射粒子122的折射率与该混光装置12的折射率不同。本实施例中,该混光装置12可呈杯状连续分布在发光二极管晶粒13的周围,该混光装置12包括朝向发光二极管晶粒13的内壁,该内壁为阶梯状表面。当然,该混光装置12也可为中央掏空的棱台或圆台等其他形状,该发光二极管晶粒13可设置在掏空的部位,从而该混光装置12连续分布在光二极管晶粒13的周围。另外,该混光装置12也可非连续地分布在发光二极管晶粒13周围,相应的,该混光装置12可为中央掏空的、不连续的棱台或圆台等其他形状。
该多个发光二极管晶粒13通过金属线(图未标示)与基板11的电路层110实现电性连接。该多个发光二极管晶粒13中的至少有两个具有不同的发光颜色。该多个发光二极管晶粒13可利用粘胶如银胶、导电胶或非导电胶等通过粘合方式直接固定在基板11上。当然,该多个发光二极管晶粒13也可通过共晶方式(Eutectic Bonding)与基板接合。本实施例中,该发光二极管10用于发出白光且包括三个发光二极管晶粒13。该三个发光二极管晶粒13可分别为中心波长为440纳米至480纳米的蓝光发光二极管晶粒、中心波长为510纳米至540纳米的绿光发光二极管晶粒、中心波长为610纳米至650纳米的红光发光二极管晶粒。
该封装体14包覆该混光装置12及多个发光二极管晶粒13。该封装体14的材质可为环氧树脂(Epoxy Resin)、硅树脂(Silicone)等透光材料。该封装体14可保护发光二极管晶粒不受外界水气的损害,并能增加发光二极管10的结构强度。另外,由于封装体14材质的选择,该封装体14的折射率通常位于发光二极管晶粒13(如,氮化镓发光二极管晶粒)与外界空气之间,从而可在折射率差别较大的发光二极管晶粒13和外界空气之间形成折射率过渡,从而提高发光二极管10的发光效率。本实施例中,该封装体14远离基板10的上表面140为沿远离基板11的方向凸起的圆弧形曲面。当然,该封装体14的上表面140还可为各种其他形状以适合发光二极管10的出光要求,例如沿远离基板11的方向凸起的非圆弧形曲面、朝向基板11方向凹陷的曲面或与基板11平行的平面等。
可以理解的是,该混光装置12还包括与其内壁相对设置、且相对远离该多个发光二极管晶粒13的外壁。该发光二极管10还可进一步包含一反射层15,且该反射层15位于该混光装置12之外壁上。来自发光二极管晶粒13的光线可依次经过所述混光装置12的内壁及混光装置12的内部,继而入射至混光装置12的外壁及该反射层15。该反射层15可将入射至其上的光线反射回混光装置12的内部,进一步充分混光并最终由该混光装置12之内壁射出。该反射层15的材质可为银或铝等易于反射光束的材料。
本发明第二实施例还提供一种发光二极管20,其包括一基板21、一混光装置22、多个发光二极管晶粒23以及一封装体24,该发光二极管20与上述发光二极管10的结构大体相同,其不同之处在于,该基板21上设置有多个衬底亚基板26,该多个发光二极管晶粒23利用覆晶方式(Flip Chip)通过金属凸块25接合到衬底亚基板26上,再通过金属线(图未标示)与基板21上的电路层210电性连接。
需要说明的是,上述混光装置12、22的朝向发光二极管晶粒13的内壁并不局限为阶梯面,其也可为其他形状的几何面。参见图3及图4,本发明实施例还提供两种混光装置内壁形状不同的发光二极管30、40。其中,图3所示的发光二极管30的混光装置32的内壁为具有单一曲率半径的曲面;图4所示的发光二极管40的混光装置42的内壁由多个曲率半径不同的曲面相连而成的几何面。
所述发光二极管10、20将混光装置12、22环绕发光二极管晶粒13、23设置,并在混光装置12、22实体内部掺杂有散射粒子122、222,该多个发光二极管晶粒13、23发出光线可入射至混光装置12、22实体内部并被散射粒子122、222散射,该散射粒子122、222可破坏各发光二极管晶粒13、23所发出光线的初始传播方向,从而使得来自各发光二极管晶粒13、23的光线在封装体14、24内部充分混光,从而该发光二极管10、20所发出的光具有良好的均匀性。
另外,本领域技术人员还可于本发明精神内做其它变化,如适当混光装置内壁的形状、发光二极管晶粒的个数或发光波长、发光二极管晶粒与基板的的固定方式等以用于本发明等设计,只要其不偏离本发明的技术效果均可。这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。
Claims (11)
1.一种发光二极管,其包括一基板、多个发光二极管晶粒以及一封装体,该多个发光二极管晶粒设置在该基板上,其特征在于:该发光二极管还包括一设置在基板上的混光装置,该混光装置环绕该多个发光二极管晶粒设置,该封装体设置在该基板上并包覆该混光装置及多个发光二极管晶粒,该混光装置由透光材料制成,且该混光装置内掺杂有散射粒子。
2.如权利要求1所述的发光二极管,其特征在于,该混光装置包括朝向该多个发光二极管晶粒的一内壁,且该内壁为阶梯状表面。
3.如权利要求1所述的发光二极管,其特征在于,该混光装置包括朝向该多个发光二极管晶粒的一内壁,该内壁为具有单一曲率半径的曲面,或者由多个曲率半径不同的曲面相连而成的几何面。
4.如权利要求1所述的发光二极管,其特征在于,该透光材料为玻璃、聚碳酸酯、聚甲基丙烯酸甲酯、硅树脂或环氧树脂。
5.如权利要求1所述的发光二极管,其特征在于,该发光二极管包括三个发光二极管晶粒,该三个发光二极管晶粒分别为红光发光二极管晶粒、绿光发光二极管晶粒及蓝光发光二极管晶粒。
6.如权利要求1所述的发光二极管,其特征在于,该发光二极管晶粒通过覆晶封装设置在基板上。
7.如权利要求1所述的发光二极管,其特征在于,该散射粒子的折射率位于1.1至2.4之间。
8.如权利要求1所述的发光二极管,其特征在于,该散射粒子的材质为二氧化钛、熔炼石英、聚碳酸酯、聚甲基丙烯酸甲酯、氧化铝、氧化镁、硅铝氧氮聚合材料或透明氧氮化物。
9.如权利要求1所述的发光二极管,其特征在于,该散射粒子的折射率与混光装置的折射率不同。
10.如权利要求1所述的发光二极管,其特征在于,该封装体的远离基板的表面为沿远离基板方向凸起的曲面、或朝向基板方向凹陷的曲面。
11.如权利要求1所述的发光二极管,其特征在于,该混光装置包括朝向该多个发光二极管晶粒的内壁,以及与该内壁相对设置且远离所述多个发光二极管的外壁,该外壁上设置有反射层。
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CNA2008103013205A CN101567366A (zh) | 2008-04-25 | 2008-04-25 | 发光二极管 |
US12/429,190 US8022426B2 (en) | 2008-04-25 | 2009-04-24 | Color mixing light emitting diode device |
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CNA2008103013205A CN101567366A (zh) | 2008-04-25 | 2008-04-25 | 发光二极管 |
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CN (1) | CN101567366A (zh) |
Cited By (2)
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US11114594B2 (en) * | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
US8946987B2 (en) * | 2007-11-07 | 2015-02-03 | Industrial Technology Research Institute | Light emitting device and fabricating method thereof |
US9287469B2 (en) * | 2008-05-02 | 2016-03-15 | Cree, Inc. | Encapsulation for phosphor-converted white light emitting diode |
US8415692B2 (en) * | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
US20110254030A1 (en) * | 2010-04-15 | 2011-10-20 | Perkinelmer Elcos Gmbh | Liquid reflector |
CN102956792B (zh) * | 2011-08-29 | 2015-07-08 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
JP2014160811A (ja) * | 2013-01-22 | 2014-09-04 | Kyocera Corp | 発光装置 |
DE102017117536A1 (de) * | 2017-08-02 | 2019-02-07 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
US11335833B2 (en) | 2018-08-31 | 2022-05-17 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
US11233183B2 (en) * | 2018-08-31 | 2022-01-25 | Creeled, Inc. | Light-emitting diodes, light-emitting diode arrays and related devices |
TWI775074B (zh) * | 2018-11-01 | 2022-08-21 | 邱昱維 | 在佈局有電路的陶瓷基板上成形環繞壁的方法及該基板 |
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US6737681B2 (en) * | 2001-08-22 | 2004-05-18 | Nichia Corporation | Light emitting device with fluorescent member excited by semiconductor light emitting element |
US20050225222A1 (en) * | 2004-04-09 | 2005-10-13 | Joseph Mazzochette | Light emitting diode arrays with improved light extraction |
EP1794808B1 (en) * | 2004-09-10 | 2017-08-09 | Seoul Semiconductor Co., Ltd. | Light emitting diode package having multiple molding resins |
JP2008108439A (ja) * | 2006-10-23 | 2008-05-08 | Nec Lighting Ltd | 電界発光素子および電界発光パネル |
US7999283B2 (en) * | 2007-06-14 | 2011-08-16 | Cree, Inc. | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
-
2008
- 2008-04-25 CN CNA2008103013205A patent/CN101567366A/zh active Pending
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CN107425103A (zh) * | 2011-08-22 | 2017-12-01 | Lg伊诺特有限公司 | 发光器件封装件和光装置 |
CN107425103B (zh) * | 2011-08-22 | 2019-12-27 | Lg伊诺特有限公司 | 发光器件封装件和光装置 |
USRE48858E1 (en) | 2011-08-22 | 2021-12-21 | Suzhou Lekin Semiconductor Co., Ltd. | Light emitting device package and light unit |
CN103996780A (zh) * | 2013-02-16 | 2014-08-20 | 奇麟光电股份有限公司 | Led灯与led灯的制法及其led字幕面板 |
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US20090267090A1 (en) | 2009-10-29 |
US8022426B2 (en) | 2011-09-20 |
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