JP2020205298A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2020205298A JP2020205298A JP2019110944A JP2019110944A JP2020205298A JP 2020205298 A JP2020205298 A JP 2020205298A JP 2019110944 A JP2019110944 A JP 2019110944A JP 2019110944 A JP2019110944 A JP 2019110944A JP 2020205298 A JP2020205298 A JP 2020205298A
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- cell
- semiconductor device
- bonding pad
- wiring layer
- current
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- 239000004065 semiconductor Substances 0.000 title claims description 62
- 238000001514 detection method Methods 0.000 claims abstract description 63
- 239000010410 layer Substances 0.000 claims abstract description 56
- 239000011229 interlayer Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 28
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012887 quadratic function Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
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Abstract
Description
図1は、第1の実施形態の半導体装置の断面図を、図2は平面図を示す。なお、図1は図2における破線A−A’の断面図である。
図3は、第2の実施形態の半導体装置の断面図を示す。図3は、図2における破線A−A’の断面図である。なお、図1に示した第1の実施形態における断面図と同一の個所には同一の符号を付してその説明を省略する。
図4は、第3の実施形態の半導体装置の平面図を、図5は断面図を示す。なお、図5は図4における破線B−B’の断面図である。なお、図1、図2に示した第1の実施形態における断面図、平面図と同一の個所には同一の符号を付してその説明を省略する。
図7は、第4の実施形態の半導体装置の平面図を、図8は、図7における破線C−C’の断面図を、図9は、図7における破線D−D’の断面図を示す。なお、図1、図2に示した第1の実施形態における断面図、平面図と同一の個所には同一の符号を付してその説明を省略する。
また、半導体装置はボンディングパッド部およびボンディングワイヤで外部接続されているが、ボンディングパッド部およびボンディングワイヤは銅などのリードフレームとハンダ等で接続されていてもよい。
(1)半導体装置は、第1主表面及び第2主表面を有する半導体基板40と、半導体基板40に形成され、第1主表面に形成されたソース電極9aと、第2主表面に形成されたドレイン電極13を含む主電流セルと、第1主表面に形成され、半導体基板40に対してソース電極9aと同じ高さの位置に形成された第3電極(ゲート制御電極14、ソース電極9b)を含む副セル(電流検知セル22、ゲートセル23)と、第3電極(ゲート制御電極14、ソース電極9b)に接続され、ソース電極9aに対して層間絶縁膜を介してソース電極9aの一部を覆って形成されるボンディングパッド配線層12と、第1ボンディングパッド配線層12に接続されるボンディングパッド部32とを備える。これにより、副セル用のボンディングバッド配線層の面積によらず、主電流セルの面積を大きくすることができる。
2 N−型ドレインドリフト領域
3a 主電流セルのPウエル領域
3b 電流検知セルのPウエル領域
4a 主電流セルのN+ソース領域
4b 電流検知セルのN+ソース領域
5 ゲート酸化膜
6 ゲート電極
7 層間絶縁膜
8 コンタクト
9a 主電流セルのソース電極
9b 電流検知セルのソース電極
10 層間絶縁膜
11 配線層コンタクト
12 ボンディングパッド配線層
13 ドレイン電極
14 ゲート制御電極
15 ボンディングパッド配線層
16 引き回し配線層
17 絶縁膜
18 配線層コンタクト
19 ボンディングパッド配線層
21 主電流セル
22 電流検知セル
23 ゲートセル
31、32、33 ボンディングパッド部
40 炭化珪素半導体基板
Claims (8)
- 第1主表面及び第2主表面を有する半導体基板と、
前記半導体基板に形成され、前記第1主表面に形成された第1電極と、前記第2主表面に形成された第2電極を含む主電流セルと、
前記第1主表面に形成され、前記半導体基板に対して前記第1電極と同じ高さの位置に形成された第3電極を含む副セルと、
前記第3電極に接続され、前記第1電極に対して層間絶縁膜を介して前記第1電極の一部を覆って形成される第1ボンディングパッド配線層と、
前記第1ボンディングパッド配線層に接続される第1ボンディングパッド部とを備える半導体装置。 - 請求項1に記載の半導体装置において、
前記副セルは、前記主電流セルから出力される電流量に対応する電流量を検知する電流検知セルである半導体装置。 - 請求項1に記載の半導体装置において、
前記副セルは、前記主電流セルから出力される電流量を制御するゲートセルである半導体装置。 - 請求項2または請求項3に記載の半導体装置において、
前記副セルの前記半導体基板に対する平面サイズは、前記第1ボンディングパッド部の前記第1ボンディングパッド配線層に対する平面サイズより小さい半導体装置。 - 請求項2に記載の半導体装置において、
前記電流検知セルは、前記主電流セルに四方を囲われている半導体装置。 - 請求項2に記載の半導体装置において、
前記電流検知セルは、前記電流検知セルに接続された前記第1ボンディングパッド部よりも、前記半導体基板の中央部により近くに配置される半導体装置。 - 請求項2に記載の半導体装置において、
前記主電流セルと前記電流検知セルに電流が流れた時の、前記主電流セルの平均温度と前記電流検知セルの温度が略等しくなるように、前記電流検知セルが配置される半導体装置。 - 請求項1に記載の半導体装置において、
前記第1電極上の一部に第2ボンディングパッド配線層が形成され、前記第1電極と前記第2ボンディングパッド配線層は電気的に接続され、前記第2ボンディングパッド配線層には第2ボンディングパッド部が接続される半導体装置。
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PCT/JP2020/022617 WO2020250869A1 (ja) | 2019-06-14 | 2020-06-09 | 半導体装置 |
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JPH0252468A (ja) * | 1988-08-17 | 1990-02-22 | Mitsubishi Electric Corp | 半導体装置 |
JPH03218643A (ja) * | 1989-11-17 | 1991-09-26 | Toshiba Corp | 大電力用半導体装置 |
JP2004014707A (ja) * | 2002-06-05 | 2004-01-15 | Renesas Technology Corp | 半導体装置 |
WO2011161721A1 (ja) * | 2010-06-24 | 2011-12-29 | 三菱電機株式会社 | 電力用半導体装置 |
WO2019106948A1 (ja) * | 2017-11-30 | 2019-06-06 | 住友電気工業株式会社 | ゲート絶縁型トランジスタ |
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JP3338185B2 (ja) | 1994-08-02 | 2002-10-28 | 株式会社東芝 | 半導体装置 |
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JP5369300B2 (ja) * | 2009-09-16 | 2013-12-18 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP4962665B2 (ja) * | 2010-04-06 | 2012-06-27 | 三菱電機株式会社 | 電力用半導体装置およびその製造方法、ならびにパワーモジュール |
JP6218462B2 (ja) * | 2013-07-04 | 2017-10-25 | 三菱電機株式会社 | ワイドギャップ半導体装置 |
JP6510310B2 (ja) * | 2014-05-12 | 2019-05-08 | ローム株式会社 | 半導体装置 |
JP2017005153A (ja) * | 2015-06-11 | 2017-01-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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JPH0252468A (ja) * | 1988-08-17 | 1990-02-22 | Mitsubishi Electric Corp | 半導体装置 |
JPH03218643A (ja) * | 1989-11-17 | 1991-09-26 | Toshiba Corp | 大電力用半導体装置 |
JP2004014707A (ja) * | 2002-06-05 | 2004-01-15 | Renesas Technology Corp | 半導体装置 |
WO2011161721A1 (ja) * | 2010-06-24 | 2011-12-29 | 三菱電機株式会社 | 電力用半導体装置 |
WO2019106948A1 (ja) * | 2017-11-30 | 2019-06-06 | 住友電気工業株式会社 | ゲート絶縁型トランジスタ |
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