JP2020158344A - 誘電体膜および電子部品 - Google Patents
誘電体膜および電子部品 Download PDFInfo
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- JP2020158344A JP2020158344A JP2019059167A JP2019059167A JP2020158344A JP 2020158344 A JP2020158344 A JP 2020158344A JP 2019059167 A JP2019059167 A JP 2019059167A JP 2019059167 A JP2019059167 A JP 2019059167A JP 2020158344 A JP2020158344 A JP 2020158344A
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- dielectric film
- dielectric
- film
- thin film
- substrate
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- 239000011777 magnesium Substances 0.000 claims abstract description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052788 barium Inorganic materials 0.000 claims abstract description 9
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 9
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011575 calcium Substances 0.000 claims abstract description 7
- 239000010955 niobium Substances 0.000 claims abstract description 7
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000002441 X-ray diffraction Methods 0.000 claims abstract description 6
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 6
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 6
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- 239000011701 zinc Substances 0.000 claims abstract description 5
- 239000002131 composite material Substances 0.000 claims description 23
- 239000010408 film Substances 0.000 abstract description 112
- 239000010409 thin film Substances 0.000 abstract description 49
- 230000015556 catabolic process Effects 0.000 abstract description 33
- 239000000470 constituent Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 41
- 239000003990 capacitor Substances 0.000 description 33
- 238000000034 method Methods 0.000 description 25
- 239000013078 crystal Substances 0.000 description 18
- 239000000843 powder Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 239000000395 magnesium oxide Substances 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 5
- 239000011812 mixed powder Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000001354 calcination Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Abstract
Description
[1]一般式xAO−yBO−zC2O5で表される複合酸化物を主成分として含む誘電体膜であって、
Aは、バリウム、カルシウムおよびストロンチウムからなる群から選ばれる少なくとも1つであり、
Bは、マグネシウムおよび亜鉛からなる群から選ばれる少なくとも1つであり、
Cは、ニオブおよびタンタルからなる群から選ばれる少なくとも1つであり、
x、yおよびzは、x+y+z=1.000、0.375≦x≦0.563、0.250≦y≦0.500、x/3≦z≦(x/3)+1/9である関係を満足し、
誘電体膜のX線回折チャートにおいて、複合酸化物の(110)面の回折ピークの半値幅が0.40°以上である誘電体膜である。
1.薄膜コンデンサ
1.1.薄膜コンデンサの全体構成
1.2.誘電体膜
1.2.1.複合酸化物
1.3.基板
1.4.下部電極
1.5.上部電極
2.薄膜コンデンサの製造方法
3.本実施形態のまとめ
4.変形例
まず、本実施形態に係る電子部品として、誘電体層が薄膜状の誘電体膜から構成される薄膜コンデンサについて説明する。
図1に示すように、本実施形態に係る電子部品の一例としての薄膜コンデンサ10は、基板1と、下部電極3と、誘電体膜5と、上部電極4とがこの順序で積層された構成を有している。下部電極3と誘電体膜5と上部電極4とはコンデンサ部を形成しており、下部電極3および上部電極4が外部回路に接続されて電圧が印加されると、誘電体膜5が所定の静電容量を示し、コンデンサとしての機能を発揮することができる。各構成要素についての詳細な説明は後述する。
誘電体膜5は、後述する複合酸化物を主成分として含んでいる。本実施形態では、主成分とは、誘電体膜100mol%に対して、50mol%以上を占める成分である。
複合酸化物は、A元素、B元素およびC元素を含む酸化物であり、一般式xAO−yBO−zC2O5で表される。本実施形態では、A元素およびB元素は2価の元素から構成されており、C元素は5価の元素から構成されている。
図1に示す基板1は、その上に形成される下地層2、下部電極3、誘電体膜5および上部電極4を支持できる程度の機械的強度を有する材料で構成されていれば特に限定されない。たとえば、Si単結晶、SiGe単結晶、GaAs単結晶、InP単結晶、SrTiO3単結晶、MgO単結晶、LaAlO3単結晶、ZrO2単結晶、MgAl2O4単結晶、NdGaO3単結晶等から構成される単結晶基板、Al2O3多結晶、ZnO多結晶、SiO2多結晶等から構成されるセラミック多結晶基板、Ni、Cu、Ti、W、Mo、Al、Pt等の金属、それらの合金等から構成される金属基板等が例示される。本実施形態では、低コスト、加工性等の観点から、Si単結晶を基板として用いる。
図1に示すように、基板1の上には、下地層2を介して、下部電極3が薄膜状に形成されている。下部電極3は、後述する上部電極4とともに誘電体膜5を挟み、コンデンサとして機能させるための電極である。下部電極3を構成する材料は、導電性を有する材料であれば特に制限されない。たとえば、Pt、Ru、Rh、Pd、Ir、Au、Ag、Cu等の金属、それらの合金、または、導電性酸化物等が例示される。
図1に示すように、誘電体膜5の表面には、上部電極4が薄膜状に形成されている。上部電極4は、上述した下部電極3とともに、誘電体膜5を挟み、コンデンサとして機能させるための電極である。したがって、上部電極4は、下部電極3とは異なる極性を有している。
次に、図1に示す薄膜コンデンサ10の製造方法の一例について以下に説明する。
本実施形態では、成膜法により得られる誘電体膜の主成分として、バリウム、カルシウムおよびストロンチウムから選ばれるA元素と、マグネシウムおよび亜鉛から選ばれるB元素と、ニオブおよびタンタルから選ばれるC元素との複合酸化物に着目している。
上述した実施形態では、誘電体膜が本実施形態に係る誘電体膜のみで構成される場合を説明したが、本実施形態に係る誘電体膜と別の誘電体組成物から構成される膜とを組み合わせた積層構造を有する電子部品でもよい。たとえば、既存のSi3Nx、SiOx、Al2Ox、ZrOx、Ta2Ox等のアモルファス誘電体膜や結晶膜との積層構造とすることで、誘電体膜5のインピーダンスや比誘電率の温度変化を調整することが可能となる。
まず、誘電体膜の形成に必要なターゲットを以下のようにして作製した。
誘電体膜に対してXRD測定を行い、得られるX線回折チャートにおいて、(110)面の回折ピークを特定して、その半値幅を算出した。結果を表1に示す。
絶縁破壊電圧(Vbd)は、以下のようにして測定した。薄膜コンデンサに対し、下部電極が露出している領域と上部電極とに超絶縁計(HIOKI SM7120)を接続し、5V/秒のステップで電圧を印加して抵抗値を計測した。初期抵抗値から2桁低下したときの電圧値を破壊電圧値(V)とし、得られた破壊電圧値(V)を誘電体膜厚で除した数値を絶縁破壊電圧(Vbd)(V/μm)とした。本実施例では、各試料について、5個の薄膜コンデンサの絶縁破壊電圧を測定し、その平均値を各試料の絶縁破壊電圧とした。本実施例では、絶縁破壊電圧は高い方が好ましく、絶縁破壊電圧が500V/μm以上である試料を良好であると判断した。結果を表1に示す。
Q値は、薄膜コンデンサに対し、基準温度25℃において、RFインピーダンス/マテリアル・アナライザ(Agilent社製4991A)にて、周波数2GHz、入力信号レベル(測定電圧)0.5Vrmsの条件下で測定された誘電損失(tanδ)の逆数とした。本実施例では、Q値は高い方が好ましく、Q値が350以上である試料を良好であると判断した。結果を表1に示す。
試料番号9について、誘電体膜の厚みを表2に示す厚みに変更した以外は、実施例1と同じ条件により誘電体膜を形成し、実施例1と同じ条件により誘電体膜を評価した。結果を表2に示す。
1… 基板
2… 下地層
3… 下部電極
4… 上部電極
5… 誘電体膜
Claims (3)
- 一般式xAO−yBO−zC2O5で表される複合酸化物を主成分として含む誘電体膜であって、
前記Aは、バリウム、カルシウムおよびストロンチウムからなる群から選ばれる少なくとも1つであり、
前記Bは、マグネシウムおよび亜鉛からなる群から選ばれる少なくとも1つであり、
前記Cは、ニオブおよびタンタルからなる群から選ばれる少なくとも1つであり、
前記x、yおよびzは、x+y+z=1.000、0.375≦x≦0.563、0.250≦y≦0.500、x/3≦z≦(x/3)+1/9である関係を満足し、
前記誘電体膜のX線回折チャートにおいて、前記複合酸化物の(110)面の回折ピークの半値幅が0.40°以上である誘電体膜。 - (110)面の回折ピークの半値幅が0.40°以上6.00°以下である請求項1に記載の誘電体膜。
- 請求項1または2に記載の誘電体膜を備える電子部品。
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JPS62170102A (ja) * | 1986-01-21 | 1987-07-27 | 住友金属鉱山株式会社 | 誘電体磁器およびその製法 |
JPH04215204A (ja) * | 1990-12-13 | 1992-08-06 | Nippon Steel Corp | 誘電体磁器組成物及びその製法 |
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CN100344580C (zh) | 2004-11-04 | 2007-10-24 | 天津大学 | 钽镁酸钡纳米粉体的制备和复相微波介质陶瓷及制备方法 |
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JPH04215204A (ja) * | 1990-12-13 | 1992-08-06 | Nippon Steel Corp | 誘電体磁器組成物及びその製法 |
JP2016084268A (ja) * | 2014-10-27 | 2016-05-19 | Tdk株式会社 | 誘電体組成物および電子部品 |
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