JP6801517B2 - 誘電体組成物および電子部品 - Google Patents
誘電体組成物および電子部品 Download PDFInfo
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- JP6801517B2 JP6801517B2 JP2017039709A JP2017039709A JP6801517B2 JP 6801517 B2 JP6801517 B2 JP 6801517B2 JP 2017039709 A JP2017039709 A JP 2017039709A JP 2017039709 A JP2017039709 A JP 2017039709A JP 6801517 B2 JP6801517 B2 JP 6801517B2
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- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
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Description
[1]一般式(aCaO+bSrO)−ZrO2で表される複合酸化物を主成分として含み、
aおよびbが、a≧0、b≧0、1.50<a+b≦4.00である関係を満足することを特徴とする誘電体組成物である。
1.薄膜コンデンサ
1.1 薄膜コンデンサの全体構成
1.2 誘電体膜
1.2.1 誘電体組成物
1.3 基板
1.4 下部電極
1.5 上部電極
2.薄膜コンデンサの製造方法
3.本実施形態における効果
4.変形例
まず、本実施形態に係る電子部品として、誘電体層が薄膜状の誘電体膜から構成される薄膜コンデンサについて説明する。
図1に示すように、本実施形態に係る電子部品の一例としての薄膜コンデンサ10は、基板1と、下部電極3と、誘電体膜5と、上部電極4とがこの順序で積層された構成を有している。下部電極3と誘電体膜5と上部電極4とはコンデンサ部を形成しており、下部電極3および上部電極4が外部回路に接続されて電圧が印加されると、誘電体膜5が所定の静電容量を示し、コンデンサとしての機能を発揮することができる。各構成要素についての詳細な説明は後述する。
誘電体膜5は、後述する本実施形態に係る誘電体組成物から構成されている。また、本実施形態では、誘電体膜5は、誘電体組成物の原料粉末を成形した成形体を焼成して得られる焼結体から構成されるのではなく、薄膜状であり公知の成膜法により形成された誘電体堆積膜であることが好ましい。なお、誘電体膜5は、結晶質であってもよいし、アモルファスであってもよいが、本実施形態では、誘電体膜5は結晶質であることが好ましい。
本実施形態に係る誘電体組成物は、一般式(aCaO+bSrO)-ZrO2で表される酸化物を主成分として含有している。すなわち、Caおよび/またはSrと、Zrとを含む複合酸化物である。上記の一般式において、「a」はZrO2の含有量に対するCaOの含有量のモル比を示し、「b」は、ZrO2の含有量に対するSrOの含有量のモル比を示している。本実施形態では、「a」および「b」は、a≧0、b≧0、1.50<a+b≦4.00である関係を満足し、1.55≦a+b≦4.00である関係を満足することが好ましい。
図1に示す基板1は、その上に形成される下地層2、下部電極3、誘電体膜5および上部電極4を支持できる程度の機械的強度を有する材料で構成されていれば特に限定されない。たとえば、Si単結晶、SiGe単結晶、GaAs単結晶、InP単結晶、SrTiO3単結晶、MgO単結晶、LaAlO3単結晶、ZrO2単結晶、MgAl2O4単結晶、NdGaO3単結晶等から構成される単結晶基板、Al2O3多結晶、ZnO多結晶、SiO2多結晶等から構成されるセラミック多結晶基板、Ni、Cu、Ti、W、Mo、Al、Pt等の金属、それらの合金等から構成される金属基板等が例示される。本実施形態では、低コスト、加工性等の観点から、Si単結晶を基板として用いる。
図1に示すように、基板1の上には、下地層2を介して、下部電極3が薄膜状に形成されている。下部電極3は、後述する上部電極4とともに誘電体膜5を挟み、コンデンサとして機能させるための電極である。下部電極3を構成する材料は、導電性を有する材料であれば特に制限されない。たとえば、Pt、Ru、Rh、Pd、Ir、Au、Ag、Cu、Ni等の金属、それらの合金、又は、導電性酸化物等が例示される。
図1に示すように、誘電体膜5の表面には、上部電極4が薄膜状に形成されている。上部電極4は、上述した下部電極3とともに、誘電体膜5を挟み、コンデンサとして機能させるための電極である。したがって、上部電極4は、下部電極3とは異なる極性を有している。
次に、図1に示す薄膜コンデンサ10の製造方法の一例について以下に説明する。
本実施形態では、高周波領域において良好な誘電特性を有する誘電体組成物として、ZrO2と2価の元素の酸化物との複合酸化物に着目している。そして、2価の元素として、CaおよびSrのみを選択し、かつZrO2に対するこれらの元素の酸化物のモル量の合計を1よりも大きい特定の範囲に制御している、すなわち、ZrO2に対して、CaOおよび/またはSrOを過剰に含有させている。
上述した実施形態では、誘電体膜は通常、本発明の誘電体組成物のみで構成される場合を説明したが、別の誘電体組成物の膜と組み合わせた積層構造であっても構わない。例えば、既存のSi3Nx、SiOx、Al2Ox、ZrOx、Ta2Ox等のアモルファス誘電体膜や結晶膜との積層構造とすることで、誘電体膜5のインピーダンスや比誘電率の温度変化を調整することが可能となる。
まず、誘電体膜の形成に必要なターゲットを以下のようにして作製した。
比誘電率およびQ値は、薄膜コンデンサ試料に対し、基準温度25℃において、RFインピーダンス/マテリアル・アナライザ(Agilent社製4991A)にて、周波数2GHz、入力信号レベル(測定電圧)0.5Vrmsの条件下で測定された静電容量と、上記で得られた誘電体膜の厚みと、から算出した(単位なし)。本実施例では、比誘電率は、アモルファスSiNx膜の比誘電率の約2倍に相当する13.0以上を良好とした。また、アモルファスSiNx膜のQ値は約500であったため、Q値は500以上を良好とした。結果を表1および図2に示す。
誘電体膜をスパッタリング法により成膜した以外は、実施例1の試料No.1と同じ方法により薄膜コンデンサを作製し、実施例1と同じ評価を行った。スパッタリング法による成膜条件は以下の条件とした。ターゲットとしては、実施例1のPLD用ターゲットと同じターゲットを用いた。結果を表2に示す。
誘電体膜の厚みを変更した以外は、実施例1の試料No.1と同じ方法により薄膜コンデンサを作製し、実施例1と同じ評価を行った。結果を表2に示す。
1… 基板
2… 下地層
3… 下部電極
4… 上部電極
5… 誘電体膜
Claims (4)
- 一般式(aCaO+bSrO)−ZrO2で表される複合酸化物を主成分として含み、
前記aおよび前記bが、a≧0、b≧0、1.55≦a+b≦4.00である関係を満足し、周波数2GHzにおける比誘電率が13.0以上であることを特徴とする誘電体堆積膜。 - 前記aおよび前記bが、1.55≦a+b≦2.20である関係を満足することを特徴とする請求項1に記載の誘電体堆積膜。
- 前記aおよび前記bが、3.00≦a+b≦4.00である関係を満足することを特徴とする請求項1に記載の誘電体堆積膜。
- 請求項1から3のいずれかに記載の誘電体堆積膜を備える電子部品。
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