JP2020108908A - ワークの保持方法及びワークの処理方法 - Google Patents
ワークの保持方法及びワークの処理方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000003672 processing method Methods 0.000 title claims description 14
- 239000007788 liquid Substances 0.000 claims abstract description 86
- 238000012545 processing Methods 0.000 claims abstract description 61
- 238000005520 cutting process Methods 0.000 claims description 69
- 230000002093 peripheral effect Effects 0.000 claims description 57
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000003825 pressing Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract 1
- 238000012546 transfer Methods 0.000 description 38
- 210000000078 claw Anatomy 0.000 description 33
- 238000004140 cleaning Methods 0.000 description 29
- 230000007246 mechanism Effects 0.000 description 27
- 239000010410 layer Substances 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 15
- 210000003371 toe Anatomy 0.000 description 12
- 230000003028 elevating effect Effects 0.000 description 11
- 230000033001 locomotion Effects 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
Description
よって、碗状に反りを有したワークを保持し処理する場合には、ワークの押圧による異物付着を引き起こすことなく、椀状に反ったワークを保持テーブルの保持面で適切に吸引保持して、その後適宜の処理を施すという課題がある。
なお、加工装置1は切削装置に限定されるものではなく、レーザビーム照射によりワークWにレーザ加工を施すレーザ加工装置やワークを研削する研削装置であってもよい。
図2に示すように、保持手段30は、支持カバー38b上に保持手段回転手段37を介して支持されており、保持手段回転手段37によってZ軸方向の軸心周りに回転可能となっている。
なお、保持手段30はポーラス部材32を備えず、支持面311に周方向に均等間隔を空けて吸引孔が形成されている、又は環状の吸引溝が形成されていてもよい。
なお、加工装置1は、突き上げ機構36を備えない構成となっていてもよい。
例えば、ベース部411の上面には、電動シリンダー又はエアシリンダー等からなる第一の昇降手段445が連結されており、第一の昇降手段445は第一の移動アーム441に連結されている。このように、本実施形態では、第一の移動アーム441と第一の昇降手段445とによって、第一の搬送手段41は鉛直方向(Z軸方向)及びY軸方向に移動可能となっている。
割り出し送り手段16は、Y軸方向の軸心を有するボールネジ160と、ボールネジ160と平行に配設された一対の図示しないガイドレールと、ボールネジ160の一端に連結されたモータ162と、内部のナットがボールネジ160に螺合し側部が図示しないガイドレールに摺接し第1の切削手段61が連結された第1の可動板163と、内部のナットがボールネジ160に螺合し側部が図示しないガイドレールに摺接し第2の切削手段62が連結された第2の可動板164とを備えている。そして、図示しないモータがボールネジ160を回動させると、これに伴い第1の可動板163(第2の可動板164)がガイドレールにガイドされてY軸方向に移動し、第1の可動板163(第2の可動板164)上に第1の切込み送り手段171(第2の切込み送り手段172)を介して連結された第1の切削手段61(第2の切削手段62)がY軸方向に移動される(割り出し送りされる)。
第2の切削手段62は、第1の切削手段61と同様の構成となっており、Y軸方向において第2の切削手段62の切削ブレード613が第1の切削手段61の切削ブレード613と対向する状態になっている。
図2、3に示すワークWは、例えば、COW(Chip On Wafer)プロセスによって製造された半導体ウェーハである。即ち、ワークWは、シリコン母材等からなる円形の半導体ウェーハであり、分割予定ラインで区切られた矩形領域に配設された図示しないデバイス、電極パッド、及びバンプ等が形成された表面Waは、所定の樹脂によってモールドがなされ一様な厚さのモールド層W2が積層されている。即ち、モールド層W2中には、複数のデバイス、電極パッド、及びバンプ等が封止されている。なお、ワークWはシリコン以外にガリウムヒ素、サファイア、窒化ガリウム又はシリコンカーバイド等を母材とするものであってもよい。
ワークの裏面Wbには、例えば図示しないダイシングテープが貼着されている。
ワークWは上記のようなモールド層W2が表面Waに積層された半導体ウェーハに限定されるものではなく、複数のウェーハを重ねて樹脂等からなる接着層でウェーハ同士を接合した積層ウェーハやパッケージ基板等の碗状の反りを有したものであってもよい。
まず、図1に示すロボット13が第1のカセット150aから棚状に収納されている一枚のワークWを引き出し、ワークWを仮置きテーブル141に移動させる。次いで、図示しない位置合わせ手段によりワークWがセンタリングされる。
ここで、図5に示すように、突き上げ機構36の突き上げピン360は、突き上げられており、保持手段30の支持面311よりもその先端が上方に位置している。
このように、保持手段30の保持面31にワークWが載置されることで、載置ステップが完了する。
次いで、保持手段30の保持面31上のワークWに液体L(純水)を供給して液体Lを保持面31とワークWの裏面Wbとの間(図7に示す隙間)に流入させる。
具体的には、図7に示すように、ワークWの上方に位置する第一の搬送手段41の液体供給ノズル418からワークWのモールド層W2の例えば中央領域に向けて液体L(純水)が適量滴下される。なお、第一の搬送手段41が液体供給ノズル418を備えていない場合には、図1に示す第二の搬送手段42を保持手段30で保持されたワークWの上方に位置付けて、第二の搬送手段42の液体供給ノズル418から液体LをワークWに対して供給してもよい。また、例えば、保持手段30の外周外側に液体供給ノズルを隣接するように配設し、ワークWの上方横側から該液体供給ノズルにより放物線を描くように噴射された液体Lをモールド層W2に供給するものとしてもよい。
液体供給ステップを実施した後、吸引手段339にポーラス部材32の吸引孔320を連通して液体LとともにワークWを吸引して保持手段30の保持面31の支持面311で吸引保持する。吸引ステップにおいてワークWを吸引保持するまでは、第一の搬送手段41の液体供給ノズル418からワークWに液体Lを供給し続けると好ましい。
吸引ステップでは、図8に示すように、ソレノイドバルブ338が開かれてポーラス部材32の吸引孔320が吸引手段339に連通される。次いで、吸引手段339が作動することで、吸引手段339が生み出す吸引力が吸引路33、保持手段30の貫通路303、及びポーラス部材32の吸引孔320を通り支持面311に伝達される。その結果、液体Lが吸引孔320から吸引路33に吸引されると共に、ワークWが吸引される液体Lにつられて碗状の反りに抗して支持面311に吸引保持され、保持面31上でワークWが平坦な状態になる。吸引の際には、ワークWの裏面Wbの外周側の領域と支持面311との間の隙間を満たす液体Lによって密閉性が高められて吸引力をリークさせる該隙間がシールされているため、保持面31でワークWが確実に吸引保持される。
例えば、ワークWが保持面31で吸引保持された後に、第一の搬送手段41からのワークWに対する液体Lの供給が停止される。
次いで、図1に示すワークWを吸引保持した保持手段30が、+X方向に送られ例えば第1の切削手段61の下方に位置付けられる。
本実施形態における処理ステップでは、ワークWの裏面Wbから図9に示す例えば第1の切削手段61の切削ブレード613で、モールド層W2とワークWとを切削することでモールド層W2とワークWとを例えば環状に除去する。
まず、図1に示すアライメント手段65によって、ワークWのエッジアライメントが実施される。即ち、保持手段30が回転し、保持手段30に保持されたワークWの外周縁Wdがアライメント手段65のカメラによって複数箇所撮像される。そして、撮像画像から例えば外周縁Wdの離間した3点の座標が検出され、該3点の座標に基づく幾何学的演算処理により、保持手段30上のワークWの正確な中心座標が求められる。
上記のように処理ステップを実施した後、図1に示す第二の搬送手段42で保持したワークWを保持手段30の保持面31上から搬出する。本実施形態における搬出ステップでは、図10に示すように、第二の搬送手段42の液体供給ノズル418からワークWのモールド層W2に対して液体Lを供給する。
W2:モールド層
1:加工装置 10:基台
A1:搬入エリア
150:第1のカセット載置部 150a:第1のカセット
151:第2のカセット載置部 151a:第2のカセット
13:ロボット 130:ハンド部 131:アーム部 132:移動手段
A2:加工エリア
141:仮置きテーブル
440:直動軸 441:第一の移動アーム
41:第一の搬送手段 411:ベース部 412:ガイド台 413:支持壁
414:ボールネジ 415:可動ブロック 416:爪部材 416a:爪先
418:液体供給ノズル 419:水供給源
445:第一の昇降手段
14:門型コラム
16:割り出し送り手段 160:ボールネジ 162:モータ 163:第1の可動板
164:第2の稼動板
171:第1の切込み送り手段 171a:第1のボールネジ 171b:第1可動台
172:第2の切込み送り手段 172a:第2のボールネジ 172b:第2可動台
61:第1の切削手段 610:スピンドル 611:ハウジング 613:切削ブレード 62:第2の切削手段 65:アライメント手段
30:保持手段 303:貫通路 31:保持面 310:中央領域 311:支持面 312:環状溝 310c:進入口
32:ポーラス部材 320:吸引孔
33:吸引路 339:吸引手段 338:ソレノイドバルブ
36:突き上げ機構 360:突き上げピン 37:保持手段回転手段
38a:蛇腹カバー 38b:支持カバー
42:第二の搬送手段 446:第二の昇降手段 452:第二の移動アーム 453:回転軸
A3:洗浄エリア
43:第三の搬送手段 447:第三の昇降手段 463:第三の移動アーム 461:直動軸
50:裏面洗浄機構
51:表面洗浄機構 511:スピンナテーブル
Claims (4)
- 椀状に反りを有したワークの保持方法であって、
ワークを保持する保持面と、該保持面に開口する吸引孔と、該吸引孔を吸引手段に選択的に連通する吸引路とを有した保持手段の該保持面上に、ワークを載置する載置ステップと、
該保持面上のワークに液体を供給して該液体を該保持面とワークとの間に流入させる液体供給ステップと、
該液体供給ステップを実施した後、該吸引手段に該吸引孔を連通して該液体とともにワークを吸引して該保持面で保持する吸引ステップと、を備えた保持方法。 - 前記載置ステップにおいては搬送手段で保持したワークを前記保持面に対して載置し、前記液体供給ステップでは、搬送手段から液体として水を供給する、請求項1記載の保持方法。
- 請求項1又は2に記載の保持方法で保持したワークに処理を施す処理方法であって、
前記吸引ステップを実施した後、ワークに処理を施す処理ステップと、
該処理ステップを実施した後、搬送手段で保持したワークを前記保持面上から搬出する搬出ステップと、を備える処理方法。 - 前記ワークは半導体ウェーハであり、
前記処理ステップでは、切削ブレードで該半導体ウェーハを外周縁に沿って環状に切削する、請求項3に記載の処理方法。
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