JP2020036215A - Memsマイクロフォン - Google Patents
Memsマイクロフォン Download PDFInfo
- Publication number
- JP2020036215A JP2020036215A JP2018161722A JP2018161722A JP2020036215A JP 2020036215 A JP2020036215 A JP 2020036215A JP 2018161722 A JP2018161722 A JP 2018161722A JP 2018161722 A JP2018161722 A JP 2018161722A JP 2020036215 A JP2020036215 A JP 2020036215A
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- Prior art keywords
- membrane
- back plate
- substrate
- air gap
- mems microphone
- Prior art date
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- 239000012528 membrane Substances 0.000 claims abstract description 135
- 239000000758 substrate Substances 0.000 claims description 109
- 238000006243 chemical reaction Methods 0.000 claims description 84
- 230000001629 suppression Effects 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 110
- 239000004020 conductor Substances 0.000 description 22
- 239000012212 insulator Substances 0.000 description 21
- 239000003990 capacitor Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000013256 coordination polymer Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
- H04R1/04—Structural association of microphone with electric circuitry therefor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
- H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only
- H04R1/28—Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
- H04R1/2807—Enclosures comprising vibrating or resonating arrangements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2410/00—Microphones
- H04R2410/03—Reduction of intrinsic noise in microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R3/00—Circuits for transducers, loudspeakers or microphones
- H04R3/005—Circuits for transducers, loudspeakers or microphones for combining the signals of two or more microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Pressure Sensors (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (6)
- 基板と、
前記基板上に設けられ、音を電気信号に変換する第1変換部及び第2変換部と、を備え、
前記第1変換部は、
前記基板を貫通する第1貫通孔と、
前記基板の一方面側において前記第1貫通孔を覆う第1メンブレンと、
前記基板の前記一方面側において前記第1貫通孔を覆い、且つ、前記第1メンブレンと第1エアギャップを介して対面する第1バックプレートと、を有し、
前記第2変換部は、
前記基板を貫通する第2貫通孔と、
前記基板の前記一方面側において前記第2貫通孔を覆う第2メンブレンと、
前記基板の前記一方面側において前記第2貫通孔を覆い、且つ、前記第2メンブレンと第2エアギャップを介して対面する第2バックプレートと、を有し、
前記基板の厚さ方向において、前記第2エアギャップの寸法は、前記第1エアギャップの寸法より大きい、MEMSマイクロフォン。 - 前記基板の厚さ方向において、前記第2エアギャップの寸法は、前記第1エアギャップの寸法の1.1倍以上2.0倍以下である、請求項1に記載のMEMSマイクロフォン。
- 前記第1変換部は、前記第1メンブレンと前記第1バックプレートとの接触を抑制する接触抑制部を有する、請求項1又は2に記載のMEMSマイクロフォン。
- 貫通孔を有する基板と、
前記基板の一方面側において前記貫通孔を覆うメンブレンと、
前記基板の一方面側において前記貫通孔を覆い、且つ、前記メンブレンと第1エアギャップを介して対面する第1バックプレートと、
前記メンブレンに対して前記第1バックプレートの反対側に設けられると共に前記基板の一方面側において前記貫通孔を覆い、且つ、前記メンブレンと第2エアギャップを介して対面する第2バックプレートと、を備え、
前記基板の厚さ方向において、前記第2エアギャップの寸法は、前記第1エアギャップの寸法より大きい、MEMSマイクロフォン。 - 前記基板の厚さ方向において、前記第2エアギャップの寸法は、前記第1エアギャップの寸法の1.1倍以上2.0倍以下である、請求項4に記載のMEMSマイクロフォン。
- 前記第1バックプレートは、前記メンブレンと前記第1バックプレートとの接触を抑制する接触抑制部を有する、請求項4又は5に記載のMEMSマイクロフォン。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018161722A JP2020036215A (ja) | 2018-08-30 | 2018-08-30 | Memsマイクロフォン |
US16/509,761 US10917728B2 (en) | 2018-08-30 | 2019-07-12 | MEMS microphone |
CN201910806650.8A CN110876107B (zh) | 2018-08-30 | 2019-08-29 | Mems传声器 |
US17/143,401 US11350221B2 (en) | 2018-08-30 | 2021-01-07 | MEMS microphone module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018161722A JP2020036215A (ja) | 2018-08-30 | 2018-08-30 | Memsマイクロフォン |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2020036215A true JP2020036215A (ja) | 2020-03-05 |
Family
ID=69639653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018161722A Pending JP2020036215A (ja) | 2018-08-30 | 2018-08-30 | Memsマイクロフォン |
Country Status (3)
Country | Link |
---|---|
US (2) | US10917728B2 (ja) |
JP (1) | JP2020036215A (ja) |
CN (1) | CN110876107B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020036214A (ja) * | 2018-08-30 | 2020-03-05 | Tdk株式会社 | Memsマイクロフォン |
JP2020036215A (ja) * | 2018-08-30 | 2020-03-05 | Tdk株式会社 | Memsマイクロフォン |
US11580646B2 (en) | 2021-03-26 | 2023-02-14 | Nanjing University Of Posts And Telecommunications | Medical image segmentation method based on U-Net |
US11765509B1 (en) * | 2022-05-27 | 2023-09-19 | Aac Acoustic Technologies (Shenzhen) Co., Ltd. | MEMS device and electro-acoustic transducer |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008245267A (ja) * | 2007-02-26 | 2008-10-09 | Yamaha Corp | シリコンマイクロフォン |
JP2011193342A (ja) * | 2010-03-16 | 2011-09-29 | Panasonic Corp | Memsデバイス |
JP2015056881A (ja) * | 2013-09-13 | 2015-03-23 | オムロン株式会社 | 音響トランスデューサ、およびマイクロホン |
JP2015056833A (ja) * | 2013-09-13 | 2015-03-23 | オムロン株式会社 | 音響トランスデューサ及びマイクロフォン |
US20150129992A1 (en) * | 2012-05-09 | 2015-05-14 | Korea Institute Of Machinery Materials | Mems microphone having dual back plate and method for manufacturing same |
Family Cites Families (29)
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US6654468B1 (en) | 1998-08-25 | 2003-11-25 | Knowles Electronics, Llc | Apparatus and method for matching the response of microphones in magnitude and phase |
WO2001043494A1 (fr) | 1999-12-13 | 2001-06-14 | Kabushiki Kaisha Kenwood | Transducteur electroacoustique optique |
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-
2018
- 2018-08-30 JP JP2018161722A patent/JP2020036215A/ja active Pending
-
2019
- 2019-07-12 US US16/509,761 patent/US10917728B2/en active Active
- 2019-08-29 CN CN201910806650.8A patent/CN110876107B/zh active Active
-
2021
- 2021-01-07 US US17/143,401 patent/US11350221B2/en active Active
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JP2008245267A (ja) * | 2007-02-26 | 2008-10-09 | Yamaha Corp | シリコンマイクロフォン |
JP2011193342A (ja) * | 2010-03-16 | 2011-09-29 | Panasonic Corp | Memsデバイス |
US20150129992A1 (en) * | 2012-05-09 | 2015-05-14 | Korea Institute Of Machinery Materials | Mems microphone having dual back plate and method for manufacturing same |
JP2015056881A (ja) * | 2013-09-13 | 2015-03-23 | オムロン株式会社 | 音響トランスデューサ、およびマイクロホン |
JP2015056833A (ja) * | 2013-09-13 | 2015-03-23 | オムロン株式会社 | 音響トランスデューサ及びマイクロフォン |
Also Published As
Publication number | Publication date |
---|---|
US20210127214A1 (en) | 2021-04-29 |
US20200077202A1 (en) | 2020-03-05 |
CN110876107B (zh) | 2021-10-29 |
US11350221B2 (en) | 2022-05-31 |
US10917728B2 (en) | 2021-02-09 |
CN110876107A (zh) | 2020-03-10 |
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