JP2019169575A - 半導体装置 - Google Patents
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Abstract
Description
第1の実施形態の半導体装置は、第1の面と、第1の面と対向する第2の面を有する半導体層と、半導体層の第1の面の側に設けられたエミッタ電極と、半導体層の第2の面の側に設けられたコレクタ電極と、半導体層の第1の面の側に設けられた第1のゲート電極パッドと、半導体層の第1の面の側に設けられた第2のゲート電極パッドと、半導体層の中に設けられた第1のトレンチと、第1のトレンチの中に設けられ第1のゲート電極パッドに電気的に接続された第1のゲート電極と、を有するセル領域と、半導体層の中に設けられた第2のトレンチと、第2のトレンチの中に設けられ第2のゲート電極パッドに電気的に接続された第2のゲート電極と、を有し、セル領域に隣り合うセル端領域と、を備えた。
第2の実施形態の半導体装置は、セル端領域は、半導体層の中に設けられた第3のトレンチと、第3のトレンチの中に設けられ第1のゲート電極パッドに接続された第3のゲート電極と、を有する点で、第1の実施形態と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第3の実施形態の半導体装置は、セル領域は、半導体層の中に設けられコレクタ電極に接するp型コレクタ領域と、p型コレクタ領域と第1の面との間に設けられたn型ドリフト領域と、n型ドリフト領域と第1の面との間に設けられたp型ベース領域と、p型ベース領域と第1の面との間に設けられエミッタ電極に接するn型エミッタ領域と、を有し、セル端領域は、p型コレクタ領域と、n型ドリフト領域と、n型ドリフト領域と第1の面との間に設けられたp型領域と、を有する。
第4の実施形態の半導体装置は、隣りあう2個の第2のトレンチの間にn型領域が設けられた点で、第3の実施形態と異なる。以下、第3の実施形態と重複する内容については、一部記述を省略する。
第5の実施形態の半導体装置は、p型領域の第1の面から第2の面に向かう方向の深さが、第2のトレンチの方向の深さよりも浅く、p型領域の第1の面から第2の面に向かう方向の深さが、p型ベース領域の第1の面から第2の面に向かう方向の深さと略同一である点で、第3の実施形態と異なる。以下、第3の実施形態と重複する内容については、一部記述を省略する。
12 エミッタ電極
14 コレクタ電極
20 メイントレンチ(第1のトレンチ)
22 コントロールトレンチ(第2のトレンチ)
23 メイントレンチ(第3のトレンチ)
24 メインゲート電極(第1のゲート電極)
25 メインゲート電極(第3のゲート電極)
26 コントロールゲート電極(第2のゲート電極)
28 p型コレクタ領域
32 n型ドリフト領域
34 p型ベース領域
36 第1のn型エミッタ領域
37 第2のn型エミッタ領域
50 n型領域
100 IGBT(半導体装置)
101 セル領域
102 セル端領域
111 第1のゲート電極パッド
112 第2のゲート電極パッド
122 コントロールトレンチ(第2のトレンチ)
126 コントロールゲート電極(第2のゲート電極)
136 n型エミッタ領域
138 p型領域
200 IGBT(半導体装置)
300 IGBT(半導体装置)
400 IGBT(半導体装置)
500 IGBT(半導体装置)
P1 第1の面
P2 第2の面
Claims (11)
- 第1の面と、前記第1の面と対向する第2の面を有する半導体層と、
前記半導体層の前記第1の面の側に設けられたエミッタ電極と、
前記半導体層の前記第2の面の側に設けられたコレクタ電極と、
前記半導体層の前記第1の面の側に設けられた第1のゲート電極パッドと、
前記半導体層の前記第1の面の側に設けられた第2のゲート電極パッドと、
前記半導体層の中に設けられた第1のトレンチと、前記第1のトレンチの中に設けられ前記第1のゲート電極パッドに電気的に接続された第1のゲート電極と、を有するセル領域と、
前記半導体層の中に設けられた第2のトレンチと、前記第2のトレンチの中に設けられ前記第2のゲート電極パッドに電気的に接続された第2のゲート電極と、を有し、前記セル領域に隣り合うセル端領域と、
を備えた半導体装置。 - 前記セル領域は、前記半導体層の中に設けられ前記コレクタ電極に接する第一導電型コレクタ領域と、前記第一導電型コレクタ領域と前記第1の面との間に設けられた第二導電型ドリフト領域と、前記第二導電型ドリフト領域と前記第1の面との間に設けられた第一導電型ベース領域と、前記第一導電型ベース領域と前記第1の面との間に設けられ前記エミッタ電極に接する第1の第二導電型エミッタ領域と、を有し、
前記セル端領域は、前記第一導電型コレクタ領域と、前記第二導電型ドリフト領域と、前記第一導電型ベース領域と、前記第一導電型ベース領域と前記第1の面との間に設けられ前記エミッタ電極に接する第2の第二導電型エミッタ領域と、を有する請求項1記載の半導体装置。 - 前記セル端領域は、前記半導体層の中に設けられた第3のトレンチと、前記第3のトレンチの中に設けられ前記第1のゲート電極パッドに電気的に接続された第3のゲート電極と、を有する請求項1又は請求項2記載の半導体装置。
- 前記第1のゲート電極及び前記第2のゲート電極に閾値以上の電圧が印加されたオン状態から、オフ状態に移行する際に、前記第2のゲート電極に閾値以下の電圧を印加した後、前記第1のゲート電極に閾値以下の電圧を印加する請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記セル領域は、前記半導体層の中に設けられ前記コレクタ電極に接する第一導電型コレクタ領域と、前記第一導電型コレクタ領域と前記第1の面との間に設けられた第二導電型ドリフト領域と、前記第二導電型ドリフト領域と前記第1の面との間に設けられた第一導電型ベース領域と、前記第一導電型ベース領域と前記第1の面との間に設けられ前記エミッタ電極に接する第二導電型エミッタ領域と、を有し、
前記セル端領域は、前記第一導電型コレクタ領域と、前記第二導電型ドリフト領域と、前記第二導電型ドリフト領域と前記第1の面との間に設けられた第一導電型領域と、を有する請求項1記載の半導体装置。 - 隣りあう2個の前記第2のトレンチの間隔は、隣り合う2個の前記第1のトレンチの間隔よりも狭い請求項5記載の半導体装置。
- 前記第一導電型領域の前記第1の面から前記第2の面に向かう方向の深さが、前記第2のトレンチの前記方向の深さよりも深い請求項5又は請求項6記載の半導体装置。
- 隣りあう2個の前記第2のトレンチの間に第二導電型領域が設けられた請求項5ないし請求項7いずれか一項記載の半導体装置。
- 前記第一導電型領域の前記第1の面から前記第2の面に向かう方向の深さが、前記第2のトレンチの前記方向の深さよりも浅い請求項5又は請求項6記載の半導体装置。
- 前記第一導電型領域の前記方向の深さが、前記第一導電型ベース領域の前記方向の深さと略同一である請求項9記載の半導体装置。
- 前記第1のゲート電極パッドに閾値以上の電圧が印加されたオン状態から、オフ状態に移行する際に、前記第2のゲート電極パッドに負電圧を印加した後、前記第1のゲート電極パッドに閾値以下の電圧を印加する請求項5ないし請求項10いずれか一項記載の半導体装置。
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US16/137,763 US10903346B2 (en) | 2018-03-23 | 2018-09-21 | Trench-gate semiconductor device having first and second gate pads and gate electrodes connected thereto |
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Cited By (6)
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---|---|---|---|---|
US11063130B2 (en) | 2019-09-20 | 2021-07-13 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor circuit |
US11222891B2 (en) | 2019-09-20 | 2022-01-11 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor circuit |
US11335771B2 (en) | 2020-03-13 | 2022-05-17 | Kabushiki Kaisha Toshiba | Semiconductor device |
US11374563B2 (en) | 2020-03-03 | 2022-06-28 | Kabushiki Kaisha Toshiba | Method for controlling semiconductor device |
WO2023139931A1 (ja) * | 2022-01-20 | 2023-07-27 | 富士電機株式会社 | 半導体装置 |
WO2023153027A1 (ja) * | 2022-02-09 | 2023-08-17 | 株式会社日立パワーデバイス | 半導体装置およびそれを用いた電力変換装置 |
Families Citing this family (2)
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---|---|---|---|---|
JP7263286B2 (ja) * | 2020-03-24 | 2023-04-24 | 株式会社東芝 | 半導体装置 |
DE102022107009A1 (de) | 2022-03-24 | 2023-09-28 | Infineon Technologies Ag | Dual-gate-leistungshalbleitervorrichtung und verfahren zum steuern einer dual-gateleistungshalbleitervorrichtung |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000101076A (ja) * | 1998-09-25 | 2000-04-07 | Toshiba Corp | 絶縁ゲート型半導体素子とその駆動方法 |
JP2004319624A (ja) * | 2003-04-14 | 2004-11-11 | Denso Corp | 半導体装置 |
JP2011181886A (ja) * | 2010-02-05 | 2011-09-15 | Denso Corp | 絶縁ゲート型半導体装置 |
JP2013098415A (ja) * | 2011-11-02 | 2013-05-20 | Denso Corp | 半導体装置 |
WO2013179648A1 (ja) * | 2012-05-30 | 2013-12-05 | 株式会社デンソー | 半導体装置 |
JP2018014419A (ja) * | 2016-07-21 | 2018-01-25 | 株式会社デンソー | 半導体装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10256550A (ja) * | 1997-01-09 | 1998-09-25 | Toshiba Corp | 半導体装置 |
JP5190485B2 (ja) | 2010-04-02 | 2013-04-24 | 株式会社豊田中央研究所 | 半導体装置 |
JP5701447B2 (ja) * | 2012-03-05 | 2015-04-15 | 三菱電機株式会社 | 半導体装置 |
JP5979993B2 (ja) * | 2012-06-11 | 2016-08-31 | ルネサスエレクトロニクス株式会社 | 狭アクティブセルie型トレンチゲートigbtの製造方法 |
JP2014103376A (ja) * | 2012-09-24 | 2014-06-05 | Toshiba Corp | 半導体装置 |
JP6404591B2 (ja) * | 2014-04-23 | 2018-10-10 | 富士電機株式会社 | 半導体装置の製造方法、半導体装置の評価方法および半導体装置 |
JP6459791B2 (ja) * | 2014-07-14 | 2019-01-30 | 株式会社デンソー | 半導体装置およびその製造方法 |
US9641168B2 (en) * | 2015-05-29 | 2017-05-02 | Infineon Technologies Ag | Controlling reverse conducting IGBT |
JP6531589B2 (ja) | 2015-09-17 | 2019-06-19 | 株式会社デンソー | 半導体装置 |
JP6531026B2 (ja) * | 2015-10-20 | 2019-06-12 | 株式会社 日立パワーデバイス | 電力変換装置 |
JP6407455B2 (ja) * | 2016-01-19 | 2018-10-17 | 三菱電機株式会社 | 半導体装置 |
JP6740759B2 (ja) * | 2016-07-05 | 2020-08-19 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP6565814B2 (ja) * | 2016-07-21 | 2019-08-28 | 株式会社デンソー | 半導体装置 |
DE102016117264B4 (de) * | 2016-09-14 | 2020-10-08 | Infineon Technologies Ag | Leistungshalbleiterbauelement mit Steuerbarkeit von dU/dt |
JP6589817B2 (ja) * | 2016-10-26 | 2019-10-16 | 株式会社デンソー | 半導体装置 |
JP6656414B2 (ja) * | 2016-12-12 | 2020-03-04 | 三菱電機株式会社 | 半導体装置の駆動方法および駆動回路 |
JP6729452B2 (ja) * | 2017-03-06 | 2020-07-22 | 株式会社デンソー | 半導体装置 |
JP6791084B2 (ja) * | 2017-09-28 | 2020-11-25 | 豊田合成株式会社 | 半導体装置 |
US11081554B2 (en) * | 2017-10-12 | 2021-08-03 | Semiconductor Components Industries, Llc | Insulated gate semiconductor device having trench termination structure and method |
CN110574169B (zh) * | 2017-11-16 | 2023-06-23 | 富士电机株式会社 | 半导体装置 |
JP7143085B2 (ja) * | 2018-01-31 | 2022-09-28 | 三菱電機株式会社 | 半導体装置、電力変換装置及び半導体装置の製造方法 |
JP6896673B2 (ja) * | 2018-03-23 | 2021-06-30 | 株式会社東芝 | 半導体装置 |
-
2018
- 2018-03-23 JP JP2018055402A patent/JP6946219B2/ja active Active
- 2018-09-21 US US16/137,763 patent/US10903346B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000101076A (ja) * | 1998-09-25 | 2000-04-07 | Toshiba Corp | 絶縁ゲート型半導体素子とその駆動方法 |
JP2004319624A (ja) * | 2003-04-14 | 2004-11-11 | Denso Corp | 半導体装置 |
JP2011181886A (ja) * | 2010-02-05 | 2011-09-15 | Denso Corp | 絶縁ゲート型半導体装置 |
JP2013098415A (ja) * | 2011-11-02 | 2013-05-20 | Denso Corp | 半導体装置 |
WO2013179648A1 (ja) * | 2012-05-30 | 2013-12-05 | 株式会社デンソー | 半導体装置 |
JP2018014419A (ja) * | 2016-07-21 | 2018-01-25 | 株式会社デンソー | 半導体装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11063130B2 (en) | 2019-09-20 | 2021-07-13 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor circuit |
US11222891B2 (en) | 2019-09-20 | 2022-01-11 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor circuit |
US11715776B2 (en) | 2019-09-20 | 2023-08-01 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor circuit |
US11374563B2 (en) | 2020-03-03 | 2022-06-28 | Kabushiki Kaisha Toshiba | Method for controlling semiconductor device |
US11335771B2 (en) | 2020-03-13 | 2022-05-17 | Kabushiki Kaisha Toshiba | Semiconductor device |
WO2023139931A1 (ja) * | 2022-01-20 | 2023-07-27 | 富士電機株式会社 | 半導体装置 |
WO2023153027A1 (ja) * | 2022-02-09 | 2023-08-17 | 株式会社日立パワーデバイス | 半導体装置およびそれを用いた電力変換装置 |
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