JP2017204557A - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
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- JP2017204557A JP2017204557A JP2016095248A JP2016095248A JP2017204557A JP 2017204557 A JP2017204557 A JP 2017204557A JP 2016095248 A JP2016095248 A JP 2016095248A JP 2016095248 A JP2016095248 A JP 2016095248A JP 2017204557 A JP2017204557 A JP 2017204557A
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- 238000003672 processing method Methods 0.000 title claims abstract description 24
- 238000007664 blowing Methods 0.000 claims abstract description 19
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 65
- 230000008569 process Effects 0.000 claims description 56
- 230000001681 protective effect Effects 0.000 claims description 14
- 239000010410 layer Substances 0.000 description 28
- 230000007246 mechanism Effects 0.000 description 12
- 238000005507 spraying Methods 0.000 description 10
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】ウェーハの加工方法であって、ウェーハ(11)に対して透過性を有する波長のレーザー光線(L)をウェーハの内部に集光しながら分割予定ライン(13)に沿って照射し、ウェーハの内部に分割予定ラインに沿う改質層(17)を形成する改質層形成工程と、改質層形成工程の前又は後に、ウェーハの裏面(11b)に伸縮性を有するダイシングテープ(31)を貼着し、ダイシングテープの外周部を環状のフレーム(33)に装着するウェーハ支持工程と、ダイシングテープを拡張するテープ拡張工程と、ダイシングテープが拡張された状態でウェーハにエアー(A)を吹き付け、改質層が形成された分割予定ラインに沿ってウェーハを個々のデバイスチップに分割するとともに、デバイスチップ同士の間隔を広げるエアー吹付工程と、を含む。
【選択図】図8
Description
11a 表面
11b 裏面
13 分割予定ライン(ストリート)
15 デバイス
17 改質層(改質領域)
21 保護部材
21a 第1面
21b 第2面
31 ダイシングテープ
33 フレーム
35 ダイボンド用フィルム
2 研削装置
4 チャックテーブル
4a 保持面
6 研削ユニット
8 スピンドル
10 マウント
12 研削ホイール
14 ホイール基台
16 研削砥石
22 レーザー加工装置
24 チャックテーブル
24a 保持面
26 レーザー加工ユニット
28 カメラ(撮像ユニット)
32 拡張分割装置
34 支持構造
36 拡張ドラム
38 フレーム支持テーブル
40 クランプ
42 昇降機構
44 シリンダケース
46 ピストンロッド
48 エアーナイフ(エアーノズル)
50 冷却ユニット
L レーザー光線
A エアー
Claims (4)
- 格子状に設定される複数の分割予定ラインによって区画された表面側の複数の領域にデバイスが形成されたウェーハを、該分割予定ラインに沿って個々のデバイスチップに分割するウェーハの加工方法であって、
ウェーハに対して透過性を有する波長のレーザー光線をウェーハの内部に集光しながら該分割予定ラインに沿って照射し、ウェーハの内部に該分割予定ラインに沿う改質層を形成する改質層形成工程と、
該改質層形成工程の前又は後に、ウェーハの裏面に伸縮性を有するダイシングテープを貼着し、該ダイシングテープの外周部を環状のフレームに装着するウェーハ支持工程と、
該ダイシングテープを拡張するテープ拡張工程と、
該ダイシングテープが拡張された状態でウェーハにエアーを吹き付け、該改質層が形成された該分割予定ラインに沿ってウェーハを個々のデバイスチップに分割するとともに、デバイスチップ同士の間隔を広げるエアー吹付工程と、を含むことを特徴とするウェーハの加工方法。 - 該エアー吹付工程では、エアーナイフでエアーを吹き付けることを特徴とする請求項1記載のウェーハの加工方法。
- 該改質層形成工程を実施する前に、表面に保護部材が貼着されたウェーハの裏面を研削し、ウェーハを所定の厚みに加工する裏面研削工程を実施することを特徴とする請求項1又は請求項2記載のウェーハの加工方法。
- 該テープ拡張工程と同時に該エアー吹付工程を開始することを特徴とする請求項1から請求項3のいずれかに記載のウェーハの加工方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016095248A JP6671794B2 (ja) | 2016-05-11 | 2016-05-11 | ウェーハの加工方法 |
TW106110739A TWI757277B (zh) | 2016-05-11 | 2017-03-30 | 晶圓的加工方法 |
SG10201703264YA SG10201703264YA (en) | 2016-05-11 | 2017-04-20 | Wafer processing method |
CN201710291264.0A CN107452609B (zh) | 2016-05-11 | 2017-04-28 | 晶片的加工方法 |
US15/586,889 US10109528B2 (en) | 2016-05-11 | 2017-05-04 | Wafer processing method |
DE102017207794.8A DE102017207794B4 (de) | 2016-05-11 | 2017-05-09 | Bearbeitungsverfahren für einen wafer |
KR1020170058101A KR102250216B1 (ko) | 2016-05-11 | 2017-05-10 | 웨이퍼의 가공 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016095248A JP6671794B2 (ja) | 2016-05-11 | 2016-05-11 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017204557A true JP2017204557A (ja) | 2017-11-16 |
JP6671794B2 JP6671794B2 (ja) | 2020-03-25 |
Family
ID=60163687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016095248A Active JP6671794B2 (ja) | 2016-05-11 | 2016-05-11 | ウェーハの加工方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10109528B2 (ja) |
JP (1) | JP6671794B2 (ja) |
KR (1) | KR102250216B1 (ja) |
CN (1) | CN107452609B (ja) |
DE (1) | DE102017207794B4 (ja) |
SG (1) | SG10201703264YA (ja) |
TW (1) | TWI757277B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190106568A (ko) * | 2018-03-09 | 2019-09-18 | 삼성전자주식회사 | 반도체 다이들의 개별화 방법 및 반도체 패키지의 제조 방법 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6887722B2 (ja) * | 2016-10-25 | 2021-06-16 | 株式会社ディスコ | ウェーハの加工方法及び切削装置 |
JP7154687B2 (ja) * | 2018-06-19 | 2022-10-18 | 株式会社ディスコ | テープ拡張装置 |
TWI678748B (zh) * | 2018-10-18 | 2019-12-01 | 大陸商蘇州工業園區雨竹半導體有限公司 | 將測試樣品自晶圓基材分離方法 |
JP7221649B2 (ja) * | 2018-10-30 | 2023-02-14 | 株式会社ディスコ | ウエーハの拡張方法およびウエーハの拡張装置 |
JP7199786B2 (ja) * | 2018-11-06 | 2023-01-06 | 株式会社ディスコ | ウェーハの加工方法 |
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JP2006012902A (ja) * | 2004-06-22 | 2006-01-12 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
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JP2016015360A (ja) * | 2014-07-01 | 2016-01-28 | 株式会社ディスコ | チップ間隔維持装置 |
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JP5977633B2 (ja) * | 2012-09-20 | 2016-08-24 | 株式会社ディスコ | 加工方法 |
JP6047353B2 (ja) | 2012-09-20 | 2016-12-21 | 株式会社ディスコ | 加工方法 |
JP6173059B2 (ja) | 2013-06-17 | 2017-08-02 | 株式会社ディスコ | ウェーハ分割装置 |
JP6178724B2 (ja) | 2013-12-26 | 2017-08-09 | 株式会社ディスコ | ウェーハの分割方法 |
-
2016
- 2016-05-11 JP JP2016095248A patent/JP6671794B2/ja active Active
-
2017
- 2017-03-30 TW TW106110739A patent/TWI757277B/zh active
- 2017-04-20 SG SG10201703264YA patent/SG10201703264YA/en unknown
- 2017-04-28 CN CN201710291264.0A patent/CN107452609B/zh active Active
- 2017-05-04 US US15/586,889 patent/US10109528B2/en active Active
- 2017-05-09 DE DE102017207794.8A patent/DE102017207794B4/de active Active
- 2017-05-10 KR KR1020170058101A patent/KR102250216B1/ko active IP Right Grant
Patent Citations (7)
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JP2003017457A (ja) * | 2001-07-03 | 2003-01-17 | Dainippon Screen Mfg Co Ltd | 基板洗浄方法及び装置 |
JP2006012902A (ja) * | 2004-06-22 | 2006-01-12 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2007067278A (ja) * | 2005-09-01 | 2007-03-15 | Tokyo Seimitsu Co Ltd | エキスパンド方法及びエキスパンド装置 |
JP2009272503A (ja) * | 2008-05-09 | 2009-11-19 | Disco Abrasive Syst Ltd | フィルム状接着剤の破断装置及び破断方法 |
JP2012174795A (ja) * | 2011-02-18 | 2012-09-10 | Tokyo Seimitsu Co Ltd | ワーク分割装置及びワーク分割方法 |
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JP2016015360A (ja) * | 2014-07-01 | 2016-01-28 | 株式会社ディスコ | チップ間隔維持装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20190106568A (ko) * | 2018-03-09 | 2019-09-18 | 삼성전자주식회사 | 반도체 다이들의 개별화 방법 및 반도체 패키지의 제조 방법 |
KR102563929B1 (ko) * | 2018-03-09 | 2023-08-04 | 삼성전자주식회사 | 반도체 다이들의 개별화 방법 및 반도체 패키지의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
DE102017207794B4 (de) | 2024-07-25 |
CN107452609A (zh) | 2017-12-08 |
US20170330799A1 (en) | 2017-11-16 |
TWI757277B (zh) | 2022-03-11 |
JP6671794B2 (ja) | 2020-03-25 |
CN107452609B (zh) | 2023-04-25 |
DE102017207794A1 (de) | 2017-11-16 |
KR20170127370A (ko) | 2017-11-21 |
KR102250216B1 (ko) | 2021-05-07 |
SG10201703264YA (en) | 2017-12-28 |
US10109528B2 (en) | 2018-10-23 |
TW201742131A (zh) | 2017-12-01 |
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