JP2017147328A - 現像ユニット、基板処理装置、現像方法および基板処理方法 - Google Patents
現像ユニット、基板処理装置、現像方法および基板処理方法 Download PDFInfo
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- JP2017147328A JP2017147328A JP2016028011A JP2016028011A JP2017147328A JP 2017147328 A JP2017147328 A JP 2017147328A JP 2016028011 A JP2016028011 A JP 2016028011A JP 2016028011 A JP2016028011 A JP 2016028011A JP 2017147328 A JP2017147328 A JP 2017147328A
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Abstract
Description
(1)基板処理装置
図1は、本発明の第1の実施の形態に係る基板処理装置の模式的平面図である。図1および図2以降の所定の図には、位置関係を明確にするために互いに直交するX方向、Y方向およびZ方向を示す矢印を付している。X方向およびY方向は水平面内で互いに直交し、Z方向は鉛直方向に相当する。
図2は、図1の塗布処理部121、現像処理部131および洗浄乾燥処理部161の内部構成を示す模式的側面図である。図2に示すように、塗布処理部121には、塗布処理室21,22,23,24が階層的に設けられる。各塗布処理室21〜24には、塗布処理ユニット129が設けられる。図3は、塗布処理ユニット129の構成を示す模式的平面図である。
図5は、図1の熱処理部123,133および洗浄乾燥処理部162の内部構成を示す模式的側面図である。図5に示すように、熱処理部123は、上方に設けられる上段熱処理部301および下方に設けられる下段熱処理部302を有する。上段熱処理部301および下段熱処理部302には、複数の熱処理ユニットPHP、複数の密着強化処理ユニットPAHPおよび複数の冷却ユニットCPが設けられる。
上記のように、図3のスピンチャック25により基板Wが回転された状態で、エッジリンスノズル41から基板Wの周縁部に膜除去液が吐出されることにより、基板Wの周縁部に塗布された金属含有塗布液が溶解される。それにより、基板Wの周縁部の金属含有塗布膜が除去される。しかしながら、基板Wの周縁部には金属含有塗布液に含有されていた金属成分が残存している。また、基板Wの裏面に金属含有塗布液が回り込んだ場合には、基板Wの裏面には金属含有塗布液に含有されていた金属成分が残存している。
図8は、搬送部122,132,163の内部構成を示す模式的側面図である。図8に示すように、搬送部122は、上段搬送室125および下段搬送室126を有する。搬送部132は、上段搬送室135および下段搬送室136を有する。上段搬送室125には搬送機構127が設けられ、下段搬送室126には搬送機構128が設けられる。また、上段搬送室135には搬送機構137が設けられ、下段搬送室136には搬送機構138が設けられる。
図1の現像処理部131の動作について説明する。図10および図11は、レジスト膜が形成された基板Wの部分拡大縦断面図である。なお、図10および図11においては、反射防止膜の図示および説明を省略している。図10(a)に示すように、基板Wは、中心層W1上に下地層W2が形成された構成を有する。中心層W1は、例えばシリコンを含む。下地層W2は、例えばシリコン窒化膜またはシリコン酸化膜等の薄膜を含む。塗布ブロック12(図1)により基板Wの下地層W2の被処理面上にレジスト膜RFが形成される。
図1、図2、図5および図8を参照しながら基板処理を説明する。インデクサブロック11のキャリア載置部111(図1)には、未処理の基板Wが収容されたキャリア113が載置される。搬送機構115は、キャリア113から基板載置部PASS1,PASS3(図8)に未処理の基板Wを搬送する。また、搬送機構115は、基板載置部PASS2,PASS4(図8)に載置された処理済みの基板Wをキャリア113に搬送する。
本実施の形態に係る基板処理装置100において、周縁部を除く基板Wの被処理面に金属含有塗布膜が形成され、基板Wの周縁部に金属が残存することが防止される。そのため、基板Wの周縁部を搬送機構115,127,128,137,138,141〜143が保持した場合でも、搬送機構115,127,128,137,138,141〜143には金属が付着しない。これにより、基板W上に金属含有塗布膜を形成するとともに金属汚染の発生を防止することが可能となる。
(a)第1の変形例
上記実施の形態において、インデクサブロック11、塗布ブロック12、現像ブロック13、洗浄乾燥処理ブロック14Aおよび搬入搬出ブロック14Bがこの順序で配置されるが、本発明はこれに限定されない。インデクサブロック11、塗布ブロック12、現像ブロック13、洗浄乾燥処理ブロック14Aおよび搬入搬出ブロック14Bは、他の順序で配置されてもよい。
第2の変形例に係る基板処理装置100について、図1の基板処理装置100と異なる点を説明する。第2の変形例においては、図1の洗浄乾燥処理ブロック14Aに洗浄乾燥処理部162(金属除去ユニットMR)が設けられない。また、図4の現像処理ユニット139に代えて、図13の現像兼金属除去ユニットが設けられる。図13は、第2の変形例における現像兼金属除去ユニットの構成を示す模式的側面図である。なお、図13においては、洗浄ノズル30、リンスノズル36、スリットノズル38および移動機構39の図示を省略する。
第3の変形例に係る基板処理装置100について、図1の基板処理装置100と異なる点を説明する。図14は、第3の変形例における現像処理ユニット139の構成を示す模式的側面図である。図14に示すように、本例における現像処理ユニット139には、スピンチャック35に対応して1または複数の裏面洗浄ノズル40がさらに設けられる。図14の例では、スピンチャック35に対応して2個の裏面洗浄ノズル40が設けられている。
第2の実施の形態に係る基板処理装置100について、第1の実施の形態に係る基板処理装置100と異なる点を説明する。本実施の形態においては、現像処理ユニット139において、基板Wのネガティブトーン現像処理が行われる。この場合、現像液として、有機溶媒が用いられる。有機溶媒は、例えば、ケトン系溶剤、エステル系溶剤、アルコール系溶剤、アミド系溶剤もしくはエーテル系溶剤等の極性溶剤または炭化水素系溶剤を含む。具体的には、現像液として、例えば酢酸ブチル、酢酸アミルまたは2−ペプタノンが用いられる。
第3の実施の形態に係る基板処理装置100について、第1の実施の形態に係る基板処理装置100と異なる点を説明する。本実施の形態においては、第2の実施の形態と同様に、現像処理ユニット139において、基板Wのネガティブトーン現像処理が行われる。この場合、現像液として、有機溶媒が用いられる。有機溶媒は、例えば、ケトン系溶剤、エステル系溶剤、アルコール系溶剤、アミド系溶剤もしくはエーテル系溶剤等の極性溶剤または炭化水素系溶剤を含む。具体的には、現像液として、例えば酢酸ブチル、酢酸アミルまたは2−ペプタノンが用いられる。
(1)上記実施の形態において、現像処理ユニット139は基板処理装置100に設けられ、基板処理装置100の一部として用いられるが、本発明はこれに限定されない。現像処理ユニット139は、基板処理装置100に設けられずに、被処理面に金属含有塗布膜が形成された基板に現像処理を行うために単体で用いられてもよい。
以下、請求項の各構成要素と実施の形態の各要素との対応の例について説明するが、本発明は下記の例に限定されない。
2 回転軸
3,25,35 スピンチャック
4,27,37 カップ
5 排液部
6 排気部
7,40 裏面洗浄ノズル
8 周縁部洗浄ノズル
9 気体供給部
10 気液供給ノズル
10a 液体ノズル
10b 気体ノズル
11 インデクサブロック
12 塗布ブロック
13 現像ブロック
14A 洗浄乾燥処理ブロック
14B 搬入搬出ブロック
14 インターフェイスブロック
15 露光装置
20 待機部
21〜24 塗布処理室
28 塗布液ノズル
29 ノズル搬送機構
30 洗浄ノズル
31〜34 現像処理室
36 リンスノズル
38 スリットノズル
39 移動機構
41,45 エッジリンスノズル
46 バックリンスノズル
100 基板処理装置
111 キャリア載置部
112,122,132,163 搬送部
113 キャリア
114 メインコントローラ
115,127,128,137,138,141〜143 搬送機構
121 塗布処理部
123,133 熱処理部
125,135 上段搬送室
126,136 下段搬送室
129 塗布処理ユニット
131 現像処理部
139 現像処理ユニット
161,162 洗浄乾燥処理部
301,303 上段熱処理部
302,304 下段熱処理部
311〜313 ガイドレール
314 移動部材
315 回転部材
BSS 洗浄乾燥処理ユニット
CP 冷却ユニット
EEW エッジ露光部
H1〜H3 ハンド
LC1,LC2 ローカルコントローラ
Mk マスク
MR 金属除去ユニット
PAHP 密着強化処理ユニット
PASS1〜PASS9 基板載置部
P−BF1,P−BF2 載置兼バッファ部
P−CP 載置兼冷却部
PHP 熱処理ユニット
RF レジスト膜
Rm 除去部
W 基板
W1 中心層
W2 下地層
W3 部分
Claims (14)
- 金属を含有する塗布液の膜が被処理面に金属含有塗布膜として形成された基板に現像処理を行う現像ユニットであって、
金属含有塗布膜が所定のパターンに露光された基板を保持する基板保持部と、
前記基板保持部に支持された基板の被処理面に現像液を供給する現像液供給部と、
前記現像液供給部により現像液が供給された後の基板の被処理面に金属を除去するかまたは金属を溶解させる洗浄液を供給する洗浄液供給部とを備える、現像ユニット。 - 前記基板保持部は、ポジティブトーン現像処理を受けるべき基板を保持し、
現像液はアルカリ性水溶液を含み、
洗浄液は、キレート剤が添加された水溶液、アルカリ性水溶液または酸性水溶液を含む、請求項1記載の現像ユニット。 - 前記洗浄液供給部により洗浄液が供給された後の基板の被処理面にリンス液を供給するリンス液供給部をさらに備え、
リンス液は水溶液を含む、請求項2記載の現像ユニット。 - キレート剤は、有機酸、有機酸の塩、アミノ酸、アミノ酸の誘導体、無機アルカリ、無機アルカリの塩、アルキルアミン、アルキルアミンの誘導体、アルカノールアミンおよびアルカノールアミンの誘導体よりなる群から選択された一種または複数種を含む、請求項2または3記載の現像ユニット。
- 前記基板保持部は、ネガティブトーン現像処理を受けるべき基板を保持し、
現像液は有機溶媒を含み、
洗浄液は、キレート剤が添加された有機溶媒を含む、請求項1記載の現像ユニット。 - 前記洗浄液供給部により洗浄液が供給された後の基板の被処理面にリンス液を供給するリンス液供給部をさらに備え、
リンス液は有機溶媒を含む、請求項5記載の現像ユニット。 - 前記基板保持部は、ネガティブトーン現像処理を受けるべき基板を保持し、
現像液は有機溶媒を含み、
洗浄液は、キレート剤が添加された水溶液を含む、請求項1記載の現像ユニット。 - 前記洗浄液供給部により洗浄液が供給された後の基板の被処理面にリンス液を供給するリンス液供給部をさらに備え、
リンス液は水溶液を含む、請求項7記載の現像ユニット。 - キレート剤は、有機酸または有機酸の塩を含む、請求項5〜8のいずれか一項に記載の現像ユニット。
- 洗浄液には、界面活性剤がさらに添加される請求項1〜9のいずれか一項に記載の現像ユニット。
- 前記現像液供給部により現像液が供給された後の基板の被処理面と反対側の裏面に金属を除去するかまたは金属を溶解させる洗浄液を供給する裏面洗浄部をさらに備える、請求項1〜10のいずれか一項に記載の現像ユニット。
- 基板の被処理面を露光する露光装置に隣接するように配置される基板処理装置であって、
金属を含有する塗布液を金属含有塗布液として基板の被処理面に供給することにより被処理面に金属含有塗布膜を形成する膜形成ユニットと、
前記膜形成ユニットによる金属含有塗布膜の形成後に、基板の被処理面の周縁部を除く領域に金属含有塗布膜が残存するように金属を溶解させる除去液を基板の周縁部に供給する周縁部除去ユニットと、
前記露光装置により被処理面の金属含有塗布膜が露光された基板に現像処理を行う請求項1〜11のいずれか一項に記載の現像ユニットと、
前記周縁部除去ユニットにより除去液が供給された後の基板を前記露光装置に搬送するとともに、前記露光装置により露光された後の基板を前記現像ユニットに搬送する搬送機構とを備える、基板処理装置。 - 金属を含有する塗布液の膜が被処理面に金属含有塗布膜として形成された基板に現像処理を行う現像方法であって、
金属含有塗布膜が所定のパターンに露光された基板を基板保持部により保持するステップと、
前記基板保持部により支持された基板の被処理面に現像液を供給するステップと、
現像液が供給された後の基板の被処理面に金属を除去するかまたは金属を溶解させる洗浄液を供給するステップとを含む、現像方法。 - 基板の被処理面を露光する露光装置を用いた基板処理方法であって、
金属を含有する塗布液を金属含有塗布液として基板の被処理面に供給することにより被処理面に金属含有塗布膜を形成するステップと、
金属含有塗布膜の形成後に、基板の被処理面の周縁部を除く領域に金属含有塗布膜が残存するように金属を溶解させる除去液を基板の周縁部に供給するステップと、
除去液が供給された後の基板を搬送機構により前記露光装置に搬入するとともに、前記露光装置により露光された後の基板を前記搬送機構により前記露光装置から搬出するステップと、
前記露光装置により被処理面の金属含有塗布膜が露光された基板に請求項13記載の現像方法を用いて現像処理を行うステップとを含む、基板処理方法。
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JP7274920B2 (ja) | 2019-04-11 | 2023-05-17 | 東京応化工業株式会社 | 洗浄液、及び金属レジストを備えた支持体の洗浄方法 |
JP7274919B2 (ja) | 2019-04-11 | 2023-05-17 | 東京応化工業株式会社 | 洗浄液、及び金属レジストを備えた支持体の洗浄方法 |
JP2020173360A (ja) * | 2019-04-11 | 2020-10-22 | 東京応化工業株式会社 | 洗浄液、及び金属レジストを備えた支持体の洗浄方法 |
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TWI653663B (zh) | 2019-03-11 |
KR102119331B1 (ko) | 2020-06-04 |
US10754251B2 (en) | 2020-08-25 |
TW201742112A (zh) | 2017-12-01 |
CN108604535B (zh) | 2022-12-20 |
JP6742748B2 (ja) | 2020-08-19 |
KR20180100172A (ko) | 2018-09-07 |
US20190041755A1 (en) | 2019-02-07 |
CN108604535A (zh) | 2018-09-28 |
WO2017141737A1 (ja) | 2017-08-24 |
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