JP2017118104A - 半導体本体上の接触層形成 - Google Patents
半導体本体上の接触層形成 Download PDFInfo
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- JP2017118104A JP2017118104A JP2016233767A JP2016233767A JP2017118104A JP 2017118104 A JP2017118104 A JP 2017118104A JP 2016233767 A JP2016233767 A JP 2016233767A JP 2016233767 A JP2016233767 A JP 2016233767A JP 2017118104 A JP2017118104 A JP 2017118104A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- 229910052751 metal Inorganic materials 0.000 claims abstract description 162
- 239000002184 metal Substances 0.000 claims abstract description 162
- 238000000034 method Methods 0.000 claims abstract description 72
- 238000000137 annealing Methods 0.000 claims abstract description 26
- 239000002245 particle Substances 0.000 claims abstract description 23
- 230000001678 irradiating effect Effects 0.000 claims abstract description 9
- 125000004429 atom Chemical group 0.000 claims description 39
- 150000002500 ions Chemical class 0.000 claims description 31
- 239000002019 doping agent Substances 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- -1 Aluminum ions Chemical class 0.000 claims description 5
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 229910021332 silicide Inorganic materials 0.000 description 52
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 51
- 238000002513 implantation Methods 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 210000000746 body region Anatomy 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 3
- 229910001423 beryllium ion Inorganic materials 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005881 NiSi 2 Inorganic materials 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002815 nickel Chemical group 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
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Abstract
Description
21 金属原子含有領域
32 ソース領域
34 ドレイン領域
61 第1のエミッタ領域
63 第2のエミッタ領域
100 半導体本体
101 第1の表面
200 金属層
300 注入マスク
301 開口部
400 さらなる金属層
Claims (20)
- 半導体本体の第1の表面に金属層を形成するステップと、
前記金属層から前記半導体本体の中に金属原子を移動させて前記半導体本体の中に金属原子含有領域を形成するように、前記金属層に粒子を照射するステップと、
前記半導体本体を焼鈍するステップであって、少なくとも前記金属原子含有領域を500℃より低い温度に加熱するステップを含む、焼鈍するステップと、
を含む方法。 - 前記温度は350℃より高い、請求項1に記載の方法。
- 前記焼鈍の持続時間は、30秒〜30分の範囲から選択される、請求項1または2に記載の方法。
- 前記半導体本体は、前記第1の表面に隣接する領域にドープ領域を含む、請求項1〜3のいずれか一項に記載の方法。
- 前記ドープ領域のドーピング濃度は、2E17cm−3〜2E20cm−3の範囲から選択される、請求項4に記載の方法。
- 前記粒子は、希ガスイオンを含む、請求項1〜5のいずれか一項に記載の方法。
- 前記粒子は、半導体イオンおよび金属イオンのうちの1つを含む、請求項1〜5のいずれか一項に記載の方法。
- 前記粒子は、ドーパントイオンを含む、請求項1〜4のいずれか一項に記載の方法。
- 前記半導体本体は、SiCを含み、前記ドーパントイオンは、
アルミニウムイオンと、
窒素原子と、
からなる群から選択される、請求項8に記載の方法。 - 前記金属層に照射するステップは、前記金属層に異なるタイプの粒子を照射するステップを含む、請求項1〜9のいずれか一項に記載の方法。
- 前記焼鈍工程の後に前記金属層を除去するステップ
をさらに含む、請求項1〜10のいずれか一項に記載の方法。 - 前記第1の表面にさらなる金属層を形成するステップ
をさらに含む、請求項11に記載の方法。 - 前記さらなる金属層は、ショットキー金属を含む、請求項12に記載の方法。
- 前記ショットキー金属は、n型SiCに対して0.7eV〜1.6eVの障壁高さのショットキー接触を形成するように構成される、請求項13に記載の方法。
- 前記ショットキー金属は、
チタン(Ti)、
モリブデン(Mo)、
ニッケル(Ni)、
タンタル(Ta)、
窒化モリブデン(MoN)、
窒化チタン(TiN)
からなる群から選択される、請求項13または14に記載の方法。 - 前記金属層に粒子を照射するステップは、開口部を含み、前記金属層を部分的に覆う、マスクを使用するステップを含む、請求項1〜15のいずれか一項に記載の方法。
- 前記ドープ領域は、トランジスタデバイスのソース領域およびドレイン領域のうちの1つである、請求項4〜16のいずれか一項に記載の方法。
- 前記ドープ領域は、バイポーラダイオードのエミッタ領域である、請求項4〜16のいずれか一項に記載の方法。
- 前記ドープ領域は、統合されたバイポーラ・ショットキー・ダイオードのエミッタ領域である、請求項4〜16のいずれか一項に記載の方法。
- 前記半導体本体は、広バンドギャップ半導体材料を含む、請求項1に記載の方法。
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