JP7513668B2 - 半導体装置および半導体装置の製造方法 - Google Patents
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 24
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Electrodes Of Semiconductors (AREA)
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Description
Claims (17)
- 炭化珪素からなる基板と、前記基板の第1面上の第1導電型の半導体層とを備える半導体装置に前記半導体層の上から水素イオンを照射して、1μm以上の厚さにわたって水素濃度が1015/cm3を超える高濃度水素領域を形成することを備え、
前記高濃度水素領域の少なくとも一部は、前記第1導電型の半導体層内に形成されることを特徴とする半導体装置の製造方法。 - 前記高濃度水素領域の少なくとも一部は、前記第1面から5μm以内に形成されることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第1導電型の半導体層は、前記基板上のバッファ層と、前記バッファ層上の前記バッファ層よりも低不純物濃度である前記第1導電型のドリフト層とを備え、
前記高濃度水素領域の少なくとも一部は、前記バッファ層に形成されることを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記高濃度水素領域の少なくとも一部は、前記基板と前記バッファ層の界面に形成されることを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記第1導電型の半導体層は、前記基板上のバッファ層と、前記バッファ層上の前記バッファ層よりも低不純物濃度である前記第1導電型のドリフト層とを備え、
前記高濃度水素領域の少なくとも一部は、前記ドリフト層に形成されることを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記第1導電型の半導体層は、前記基板上のバッファ層と、前記バッファ層上の前記バッファ層よりも低不純物濃度である前記第1導電型のドリフト層とを備え、
前記高濃度水素領域は、前記バッファ層および前記ドリフト層にわたって形成されることを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記高濃度水素領域における水素濃度のピーク値は、1016/cm3以上であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記高濃度水素領域における水素濃度は、1020/cm3以下であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記水素イオンのドーズ量は、1012/cm2以上であることを特徴とする請求項1から8のいずれか一項に記載の半導体装置の製造方法。
- 前記水素イオンのドーズ量は、1016/cm2以下であることを特徴とする請求項9に記載の半導体装置の製造方法。
- 前記半導体層に前記第1導電型とは異なる第2導電型の不純物のイオンを照射することと、
前記第2導電型の不純物を活性化させるために1500℃以上の温度でアニールすることと、をさらに備え、
前記水素イオンの照射は、前記1500℃以上の温度でアニールする前に実行されることを特徴とする請求項1から8のいずれか一項に記載の半導体装置の製造方法。 - 前記基板の第1面とは反対側の第2面に金属電極層を形成することと、
前記金属電極層を450℃以上800℃以下の温度でアニールすることと、をさらに備え、
前記水素イオンの照射は、前記450℃以上800℃以下の温度でアニールする前に実行されることを特徴とする請求項1から8のいずれか一項に記載の半導体装置の製造方法。 - 水素濃度が10 15 /cm 3 以下となる前記高濃度水素領域の下端は、前記基板内または前記半導体層内に位置する、請求項1から8のいずれか一項に記載の半導体装置の製造方法。
- 水素濃度が10 15 /cm 3 以下となる前記高濃度水素領域の下端は、前記基板内に位置する、請求項1から8のいずれか一項に記載の半導体装置の製造方法。
- 水素濃度が10 15 /cm 3 以下となる前記高濃度水素領域の下端は、前記バッファ層内に位置する、請求項3に記載の半導体装置の製造方法。
- 水素濃度が10 15 /cm 3 以下となる前記高濃度水素領域の下端は、前記ドリフト層内に位置する、請求項5に記載の半導体装置の製造方法。
- 炭化珪素からなる基板と、
前記基板上に設けられる第1導電型の半導体層と、
1μm以上の厚さにわたって水素濃度が1015/cm3を超える高濃度水素領域と、を備え、
前記高濃度水素領域の少なくとも一部は、前記第1導電型の半導体層内に形成され、
水素濃度が10 15 /cm 3 以下となる前記高濃度水素領域の下端は、前記基板内または前記半導体層内に位置することを特徴とする半導体装置。
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PCT/JP2023/024274 WO2024024386A1 (ja) | 2022-07-29 | 2023-06-29 | 半導体装置および半導体装置の製造方法 |
TW112127519A TW202405906A (zh) | 2022-07-29 | 2023-07-24 | 半導體裝置及半導體裝置之製造方法 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US20130277793A1 (en) | 2012-04-24 | 2013-10-24 | Fairchild Korea Semiconductor, Ltd. | Power device and fabricating method thereof |
WO2016114057A1 (ja) | 2015-01-16 | 2016-07-21 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
WO2016120999A1 (ja) | 2015-01-27 | 2016-08-04 | 三菱電機株式会社 | 半導体装置 |
JP2017168776A (ja) | 2016-03-18 | 2017-09-21 | 三菱電機株式会社 | 半導体素子 |
US20190165151A1 (en) | 2017-11-29 | 2019-05-30 | Infineon Technologies Ag | Insulated Gate Bipolar Transistor Having First and Second Field Stop Zone Portions and Manufacturing Method |
US20190165090A1 (en) | 2017-11-29 | 2019-05-30 | Infineon Technologies Ag | Method of Manufacturing a Semiconductor Device Comprising First and Second Field Stop Zone Portions |
WO2020080295A1 (ja) | 2018-10-18 | 2020-04-23 | 富士電機株式会社 | 半導体装置および製造方法 |
JP2021145111A (ja) | 2020-03-13 | 2021-09-24 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
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- 2023-06-29 WO PCT/JP2023/024274 patent/WO2024024386A1/ja active Search and Examination
- 2023-07-24 TW TW112127519A patent/TW202405906A/zh unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US20130277793A1 (en) | 2012-04-24 | 2013-10-24 | Fairchild Korea Semiconductor, Ltd. | Power device and fabricating method thereof |
WO2016114057A1 (ja) | 2015-01-16 | 2016-07-21 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
WO2016120999A1 (ja) | 2015-01-27 | 2016-08-04 | 三菱電機株式会社 | 半導体装置 |
JP2017168776A (ja) | 2016-03-18 | 2017-09-21 | 三菱電機株式会社 | 半導体素子 |
US20190165151A1 (en) | 2017-11-29 | 2019-05-30 | Infineon Technologies Ag | Insulated Gate Bipolar Transistor Having First and Second Field Stop Zone Portions and Manufacturing Method |
US20190165090A1 (en) | 2017-11-29 | 2019-05-30 | Infineon Technologies Ag | Method of Manufacturing a Semiconductor Device Comprising First and Second Field Stop Zone Portions |
WO2020080295A1 (ja) | 2018-10-18 | 2020-04-23 | 富士電機株式会社 | 半導体装置および製造方法 |
JP2021145111A (ja) | 2020-03-13 | 2021-09-24 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
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