JP2016510893A - 一貫性のあるセンサ表面積を有する化学センサ - Google Patents
一貫性のあるセンサ表面積を有する化学センサ Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
- B01L3/502761—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip specially adapted for handling suspended solids or molecules independently from the bulk fluid flow, e.g. for trapping or sorting beads, for physically stretching molecules
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
- B01L2200/06—Fluid handling related problems
- B01L2200/0647—Handling flowable solids, e.g. microscopic beads, cells, particles
- B01L2200/0668—Trapping microscopic beads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2300/00—Additional constructional details
- B01L2300/06—Auxiliary integrated devices, integrated components
- B01L2300/0627—Sensor or part of a sensor is integrated
- B01L2300/0636—Integrated biosensor, microarrays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2300/00—Additional constructional details
- B01L2300/08—Geometry, shape and general structure
- B01L2300/0861—Configuration of multiple channels and/or chambers in a single devices
- B01L2300/0877—Flow chambers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
Abstract
Description
本出願は、2013年8月22日出願の米国仮特許出願第61/868,739号、及び2013年3月15日出願の同第61/790,866号に対する優先権を主張するものであり、その内容全体は参照によりそれらの全体が本明細書に組み込まれる。
Claims (20)
- 化学センサであって、
上面を有する浮遊ゲート導体を含む化学感応性電界効果トランジスタと、
前記浮遊ゲート導体の前記上面にまで延伸する開口部を画定する材料であって、第2の絶縁体の下にある第1の絶縁体を備える材料と、
前記浮遊ゲート導体の前記上面に接触し、かつ前記開口部の側壁に沿ってある距離を延伸する伝導性素子であって、前記距離が前記第1の絶縁体の厚さによって画定される、伝導性素子と、を備える、前記化学センサ。 - 前記開口部が、前記第1の絶縁体内に下部、及び前記第2の絶縁体内に上部を含む、請求項1に記載の前記化学センサ。
- 前記伝導性素子が前記第1の絶縁体の上面にわたって延伸するように、前記開口部の前記下部の幅が前記上部の幅よりも小さい、請求項2に記載の前記化学センサ。
- 前記上部が、前記第2の絶縁体の内面によって画定される、請求項2に記載の前記化学センサ。
- 前記伝導性素子が、前記第1の絶縁体の上面にまで延伸する、請求項1に記載の前記化学センサ。
- 前記伝導性素子が、前記化学センサの反応領域の下部を画定する内面を含み、前記第2の絶縁体が、前記開口部の上部を画定する内面を含む、請求項1に記載の前記化学センサ。
- 前記伝導性素子が、前記化学センサの反応領域の底面を画定するように、前記浮遊ゲート導体の前記上面を横切って延伸する、請求項1に記載の前記化学センサ。
- 前記伝導性素子が、導電性材料を備え、前記伝導性素子の内面が、前記導電性材料の酸化物を含む、請求項1に記載の前記化学センサ。
- 前記化学センサの検知表面が、前記伝導性素子の内面を含む、請求項1に記載の前記化学センサ。
- 前記化学感応性電界効果トランジスタが、前記伝導性素子に近接して発生する化学反応に応答してセンサ信号を生成する、請求項1に記載の前記化学センサ。
- 化学センサの製造方法であって、
上面を有する浮遊ゲート導体を含む化学感応性電界効果トランジスタを形成することと、
前記浮遊ゲート導体の前記上面にまで延伸する開口部を画定する材料を形成することであって、前記材料が第2の絶縁体の下にある第1の絶縁体を備える、形成することと、
前記浮遊ゲート導体の前記上面に接触し、かつ前記開口部の側壁に沿ってある距離を延伸する伝導性素子であって、前記距離が前記第1の絶縁体の厚さによって画定される、伝導性素子を形成することと、を含む、前記方法。 - 前記材料を形成すること及び前記伝導性素子を形成することが、
前記浮遊ゲート導体上に前記第1の絶縁体を形成することであって、前記第1の絶縁体が前記浮遊ゲート導体の前記上面にまで延伸する空洞を画定する、形成することと、
前記空洞内に前記伝導性素子を形成することと、
前記伝導性素子上に前記第2の絶縁体を形成することと、
前記伝導性素子を曝露するために、前記第2の絶縁体をエッチングすることと、を含む、請求項11に記載の前記方法。 - 前記空洞内に前記伝導性素子を形成することが、
伝導性材料を前記空洞内かつ前記第1の絶縁体の上面上に堆積することと、
前記伝導性材料の少なくとも一部分を前記第1の絶縁体の前記上面から取り除くことと、を含む、請求項12に記載の前記方法。 - 前記伝導性材料の少なくとも前記一部分を取り除くことが、前記第1の絶縁体の前記上面を曝露するために平面化プロセスを実施すること含む、請求項13に記載の前記方法。
- 前記第2の絶縁体上にハードマスクを形成することをさらに含み、前記第2の絶縁体をエッチングすることが、エッチマスクとして前記ハードマスクを使用することを含む、請求項12に記載の前記方法。
- 前記開口部が、前記第1の絶縁体内に下部、及び前記第2の絶縁体内に上部を含む、請求項11に記載の前記方法。
- 前記伝導性素子が前記第1の絶縁体の上面にわたって延伸するように、前記開口部の下部の幅が上部の幅よりも小さい、請求項16に記載の前記方法。
- 前記上部が、前記第2の絶縁体の内面によって画定される、請求項16に記載の前記方法。
- 前記伝導性素子が、前記化学センサの反応領域の下部を画定する内面を含み、前記第2の絶縁体が、前記開口部の上部を画定する内面を含む、請求項11に記載の前記方法。
- 前記伝導性素子が、前記化学センサの反応領域の底面を画定するように、前記浮遊ゲート導体の前記上面を横切って延伸する、請求項11に記載の前記方法。
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