JP2016133702A - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP2016133702A JP2016133702A JP2015009212A JP2015009212A JP2016133702A JP 2016133702 A JP2016133702 A JP 2016133702A JP 2015009212 A JP2015009212 A JP 2015009212A JP 2015009212 A JP2015009212 A JP 2015009212A JP 2016133702 A JP2016133702 A JP 2016133702A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- display device
- region
- semiconductor layer
- electrode portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 152
- 239000010409 thin film Substances 0.000 claims abstract description 77
- 239000011159 matrix material Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 5
- 239000010408 film Substances 0.000 description 99
- 239000010410 layer Substances 0.000 description 72
- 239000003990 capacitor Substances 0.000 description 48
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 40
- 239000000758 substrate Substances 0.000 description 13
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
の通りである。
本発明の第1の実施形態にかかる有機EL表示装置は、アレイ基板SUB(図3参照)と、アレイ基板SUBに対向する対向基板と、アレイ基板SUBに接続されるフレキシブル回路基板と、ドライバ集積回路とを含む。対向基板にカラーフィルタが設けられ、カラーフィルタと白色OLED(Organic Light Emitting Diode)との組合せによりフルカラー表示が実現される。白色OLEDの代わりにRGB等のそれぞれの色を発光する発光素子を用いる場合には、対向基板およびカラーフィルタは存在しなくてもよい。
次に本発明の第2の実施形態にかかる有機EL表示装置について説明する。以下では第2の実施形態にかかる有機EL表示装置のうち、第1の実施形態と異なる部分を中心に説明する。
次に本発明の第3の実施形態にかかる有機EL表示装置について説明する。本実施形態ではチャネル領域にホールアキュムレーション抑制のための構造が設けられている。以下では第3の実施形態にかかる有機EL表示装置のうち、第1の実施形態と異なる部分を中心に説明する。
Claims (21)
- マトリクス状に配置された複数の画素のそれぞれに設けられた、前記画素の輝度を調整する電流又は電圧を制御するための薄膜トランジスタを有し、
前記薄膜トランジスタは、半導体層と、前記半導体層の下に設けられた第1絶縁層と、前記半導体層の上に設けられた第2絶縁層と、前記半導体層に間隔をあけて対向するゲート電極と、を有し、
前記半導体層は、ソース領域及びドレイン領域と、前記ソース領域と前記ドレイン領域の間にあるチャネル領域と、を含み、
前記ゲート電極は、前記第1絶縁層を介して前記半導体層に下方で対向する第1ゲート電極部と、前記第2絶縁層を介して前記半導体層に上方で対向する第2ゲート電極部と、前記ソース領域と前記ドレイン領域との間の方向に直交する方向で前記半導体層に側方で対向して前記第1ゲート電極部及び前記第2ゲート電極部に接続する第3ゲート電極部と、を含み、
前記第1絶縁層及び前記第2絶縁層は、前記半導体層の周囲に相互に積層する積層部を有し、
前記第1絶縁層及び前記第2絶縁層の前記積層部の一部が、前記半導体層と前記第3ゲート電極部との間に介在する、
ことを特徴とする表示装置。 - 前記半導体層は、前記ソース領域と前記ドレイン領域との間の方向に、前記第1ゲート電極部及び前記第2ゲート電極部から突出し、
前記半導体層が前記第1ゲート電極部から突出する第1位置と、前記半導体層が前記第2ゲート電極部から突出する第2位置とは、ずれている、
ことを特徴とする請求項1に記載の表示装置。 - 前記第1ゲート電極部は、前記第2ゲート電極部の全体に対向する形状を超える大きさを有し、
前記第1位置は、前記第2位置よりも、前記ソース領域と前記ドレイン領域との間の方向で外側にある、
ことを特徴とする請求項2に記載の表示装置。 - 前記第2ゲート電極部は、前記第1ゲート電極部の全体に対向する形状を超える大きさを有し、
前記第2位置は、前記第1位置よりも、前記ソース領域と前記ドレイン領域との間の方向で外側にある、
ことを特徴とする請求項2に記載の表示装置。 - 前記半導体層の前記チャネル領域は、前記第1ゲート電極部及び前記第2ゲート電極部の両方が対向する重畳対向領域と、前記第1ゲート電極部及び前記第2ゲート電極部の一方のみが対向する片側対向領域と、を含み、
前記片側対向領域は、前記重畳対向領域の、前記ソース領域と前記ドレイン領域との間の方向の両側にある、
ことを特徴とする請求項1に記載の表示装置。 - 前記第1ゲート電極部及び前記第2ゲート電極部の一方は、前記ソース領域と前記ドレイン領域との間の方向に、前記半導体層と対向する領域が途切れるように、切り欠きを有する、
ことを特徴とする請求項1から5のいずれかに記載の表示装置。 - 前記切り欠きに入る配線をさらに有し、
前記配線は、前記半導体層の上面又は下面のうち、前記切り欠きを有する前記第1ゲート電極部又は前記第2ゲート電極部に対向する側で、前記半導体層に電気的に接続する、
ことを特徴とする請求項6に記載の表示装置。 - 前記配線は、前記ソース領域及び前記ドレイン領域の一方にさらに電気的に接続する、
ことを特徴とする請求項7に記載の表示装置。 - 前記第1絶縁層及び前記第2絶縁層は、前記ソース領域と前記ドレイン領域との間の方向に、前記半導体層に沿って長く延びる形状で前記積層部を貫通するコンタクトホールを有し、
前記第3ゲート電極部は、コンタクトホール内に設けられる、
ことを特徴とする請求項1から8のいずれかに記載の表示装置。 - 前記第1ゲート電極部は、前記第1絶縁層及び前記第2絶縁層から露出するように突出する突出領域を有するように設けられ、
前記第3ゲート電極部は、前記突出領域で前記第1ゲート電極部に接続する、
ことを特徴とする請求項1から8のいずれかに記載の表示装置。 - 前記第1絶縁層及び前記第2絶縁層は、前記第3ゲート電極部の前記半導体層とは反対側を避けて設けられる、
ことを特徴とする請求項1から8のいずれかに記載の表示装置。 - 前記ソース領域と前記ドレイン領域との間の方向で、前記3ゲート電極部の両端が、前記第1ゲート電極部及び前記第2ゲート電極部の両端の内側にある、
ことを特徴とする請求項1から11のいずれかに記載の表示装置。 - 前記第1ゲート電極部は、前記半導体層と対向する第1領域を有し、
前記第2ゲート電極部は、前記半導体層と対向する第2領域を有し、
前記第3ゲート電極部は、前記半導体層と対向する第3領域を有し、
前記ソース領域と前記ドレイン領域との間の方向で、前記第3領域の両端が、前記第1領域及び前記第2領域の両端の内側にある、
ことを特徴とする請求項12に記載の表示装置。 - 前記第1ゲート電極部は、前記半導体層と対向する第1領域を有し、
前記第2ゲート電極部は、前記半導体層と対向する第2領域を有し、
前記ソース領域と前記ドレイン領域との間の方向で、前記コンタクトホールの両端が、前記第1領域及び前記第2領域の一方の両端の外側にあって、他方の両端の内側にある、
ことを特徴とする請求項9に記載の表示装置。 - 前記第3ゲート電極部は、前記半導体層の両側に対向する、
ことを特徴とする請求項1から14のいずれかに記載の表示装置。 - 前記第3ゲート電極部は、前記半導体層の片側のみに対向する、
ことを特徴とする請求項1から14のいずれかに記載の表示装置。 - 前記第3ゲート電極部は、前記ソース領域と前記ドレイン領域との間の方向に、断続的に設けられる、
ことを特徴とする請求項1から16のいずれかに記載の表示装置。 - 前記第3ゲート電極部は、前記ソース領域と前記ドレイン領域との間の方向に、連続的に設けられる、
ことを特徴とする請求項1から16のいずれかに記載の表示装置。 - 前記半導体層は、前記ソース領域と前記ドレイン領域との間の前記方向に交差する方向に分岐する分岐半導体層を有し、
前記分岐半導体層は、前記チャネル領域から分岐する分岐チャネル領域を含む、
ことを特徴とする請求項1から18のいずれかに記載の表示装置。 - 前記第1ゲート電極部及び前記第2ゲート電極部の少なくとも一方は、前記分岐半導体層に対向するように分岐する分岐ゲート電極部を有する、
ことを特徴とする請求項19に記載の表示装置。 - 前記分岐チャネル領域の端部は、前記ソース領域と前記ドレイン領域のうち一方と電気的に接続される、
ことを特徴とする請求項19または20に記載の表示装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015009212A JP6506973B2 (ja) | 2015-01-21 | 2015-01-21 | 表示装置 |
PCT/JP2016/051586 WO2016117609A1 (ja) | 2015-01-21 | 2016-01-20 | 表示装置 |
CN201680006616.7A CN107210013B (zh) | 2015-01-21 | 2016-01-20 | 显示装置 |
KR1020177020006A KR101939518B1 (ko) | 2015-01-21 | 2016-01-20 | 표시 장치 |
US15/544,117 US10283643B2 (en) | 2015-01-21 | 2016-01-20 | Display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015009212A JP6506973B2 (ja) | 2015-01-21 | 2015-01-21 | 表示装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016133702A true JP2016133702A (ja) | 2016-07-25 |
JP2016133702A5 JP2016133702A5 (ja) | 2018-01-18 |
JP6506973B2 JP6506973B2 (ja) | 2019-04-24 |
Family
ID=56417147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015009212A Active JP6506973B2 (ja) | 2015-01-21 | 2015-01-21 | 表示装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10283643B2 (ja) |
JP (1) | JP6506973B2 (ja) |
KR (1) | KR101939518B1 (ja) |
CN (1) | CN107210013B (ja) |
WO (1) | WO2016117609A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102503164B1 (ko) * | 2016-04-05 | 2023-02-24 | 삼성디스플레이 주식회사 | 표시 패널 및 이의 제조 방법 |
JP7022592B2 (ja) * | 2018-01-11 | 2022-02-18 | 株式会社ジャパンディスプレイ | 表示装置 |
CN109686794B (zh) * | 2019-01-02 | 2021-01-22 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制造方法、显示装置 |
CN112397579B (zh) * | 2020-10-22 | 2022-12-06 | 云谷(固安)科技有限公司 | 显示面板 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000236096A (ja) * | 1998-12-18 | 2000-08-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2003115497A (ja) * | 2001-10-03 | 2003-04-18 | Seiko Epson Corp | 薄膜半導体装置及びその製造方法並びに当該装置を備える電子デバイス |
JP2004165688A (ja) * | 2003-12-22 | 2004-06-10 | Fujitsu Display Technologies Corp | 薄膜トランジスタマトリックス基板、および液晶表示装置 |
JP2008151900A (ja) * | 2006-12-15 | 2008-07-03 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2009122253A (ja) * | 2007-11-13 | 2009-06-04 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2011181913A (ja) * | 2010-02-05 | 2011-09-15 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04217230A (ja) * | 1990-12-19 | 1992-08-07 | Nec Corp | 液晶表示素子およびその製造方法 |
JP3211291B2 (ja) | 1991-10-22 | 2001-09-25 | カシオ計算機株式会社 | 薄膜トランジスタ |
JPH10290012A (ja) * | 1997-04-14 | 1998-10-27 | Nec Corp | アクティブマトリクス型液晶表示装置およびその製造方法 |
TW526355B (en) * | 1999-07-14 | 2003-04-01 | Sanyo Electric Co | Reflection type liquid crystal display device |
JP2002118255A (ja) * | 2000-07-31 | 2002-04-19 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2007233270A (ja) * | 2006-03-03 | 2007-09-13 | Sanyo Electric Co Ltd | 有機el表示パネル |
JP5026019B2 (ja) * | 2006-08-08 | 2012-09-12 | 三菱電機株式会社 | 薄膜トランジスタ基板、薄膜トランジスタの製造方法、及び表示装置 |
JP2009043748A (ja) | 2007-08-06 | 2009-02-26 | Seiko Epson Corp | 半導体装置および電気光学装置 |
KR20110037220A (ko) | 2009-10-06 | 2011-04-13 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치 |
KR101797253B1 (ko) * | 2009-12-04 | 2017-11-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
KR101947163B1 (ko) * | 2012-02-10 | 2019-02-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR20130136063A (ko) * | 2012-06-04 | 2013-12-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법 |
JP6061536B2 (ja) * | 2012-07-30 | 2017-01-18 | 株式会社ジャパンディスプレイ | 表示装置 |
TWI624936B (zh) * | 2013-06-05 | 2018-05-21 | 半導體能源研究所股份有限公司 | 顯示裝置 |
KR102287013B1 (ko) * | 2014-11-25 | 2021-08-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법 |
-
2015
- 2015-01-21 JP JP2015009212A patent/JP6506973B2/ja active Active
-
2016
- 2016-01-20 US US15/544,117 patent/US10283643B2/en active Active
- 2016-01-20 WO PCT/JP2016/051586 patent/WO2016117609A1/ja active Application Filing
- 2016-01-20 CN CN201680006616.7A patent/CN107210013B/zh active Active
- 2016-01-20 KR KR1020177020006A patent/KR101939518B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000236096A (ja) * | 1998-12-18 | 2000-08-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2003115497A (ja) * | 2001-10-03 | 2003-04-18 | Seiko Epson Corp | 薄膜半導体装置及びその製造方法並びに当該装置を備える電子デバイス |
JP2004165688A (ja) * | 2003-12-22 | 2004-06-10 | Fujitsu Display Technologies Corp | 薄膜トランジスタマトリックス基板、および液晶表示装置 |
JP2008151900A (ja) * | 2006-12-15 | 2008-07-03 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2009122253A (ja) * | 2007-11-13 | 2009-06-04 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2011181913A (ja) * | 2010-02-05 | 2011-09-15 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
Also Published As
Publication number | Publication date |
---|---|
US20180013007A1 (en) | 2018-01-11 |
CN107210013B (zh) | 2020-01-14 |
US10283643B2 (en) | 2019-05-07 |
WO2016117609A1 (ja) | 2016-07-28 |
JP6506973B2 (ja) | 2019-04-24 |
KR101939518B1 (ko) | 2019-01-16 |
CN107210013A (zh) | 2017-09-26 |
KR20170098886A (ko) | 2017-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6920785B2 (ja) | 表示装置 | |
US10388905B2 (en) | Display device having an auxiliary electrode | |
US10050097B2 (en) | Organic light-emitting diode display | |
US9276051B2 (en) | Light-emitting element display device | |
US8558222B2 (en) | Organic light emitting diode display | |
KR101877451B1 (ko) | 유기 발광 표시 장치 | |
KR20140022523A (ko) | 박막 트랜지스터 기판과 그 제조방법 및 그를 이용한 유기 발광장치 | |
WO2016117609A1 (ja) | 表示装置 | |
JP2017111184A (ja) | 表示装置 | |
US9806139B2 (en) | Light emitting element display device | |
KR102317835B1 (ko) | 박막 트랜지스터 어레이 기판 및 이를 구비하는 유기전계발광 표시장치 | |
JP2015176800A (ja) | 発光表示装置 | |
JP2015056375A (ja) | 発光装置および電子機器 | |
US10916177B2 (en) | Display apparatus having a unit pixel composed of four sub-pixels | |
US9448450B2 (en) | Display device | |
JP2015084069A (ja) | 発光装置および電子機器 | |
JP2015060782A (ja) | 発光装置および電子機器 | |
US20220157899A1 (en) | Display device | |
JP2018106803A (ja) | 有機el表示装置および有機el表示装置の製造方法 | |
JP2023120847A (ja) | 表示装置 | |
KR20230103148A (ko) | 박막 트랜지스터 및 이를 포함한 표시패널 | |
JP2021141193A (ja) | 半導体装置、及び表示装置 | |
JP2005215646A (ja) | 電気光学装置及び電子機器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171129 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171129 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181002 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181128 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190312 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190401 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6506973 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |