JP2016115766A - 逆導通igbt - Google Patents
逆導通igbt Download PDFInfo
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- JP2016115766A JP2016115766A JP2014252013A JP2014252013A JP2016115766A JP 2016115766 A JP2016115766 A JP 2016115766A JP 2014252013 A JP2014252013 A JP 2014252013A JP 2014252013 A JP2014252013 A JP 2014252013A JP 2016115766 A JP2016115766 A JP 2016115766A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- 230000004888 barrier function Effects 0.000 claims abstract description 75
- 210000000746 body region Anatomy 0.000 claims abstract description 59
- 239000012535 impurity Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 78
- 239000002344 surface layer Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000011084 recovery Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
図4に、変形例の逆導通IGBT2を示す。逆導通IGBT2の半導体層10は、p型の高濃度領域42を備えていることを特徴とする。高濃度領域42は、半導体層10の表層部に配置されている。高濃度領域42は、ボディ領域15内に配置されており、第2バリア部分領域18bの下方に配置されており、絶縁トレンチゲート部30の側面に接する。高濃度領域42は、イオン注入技術を利用して、半導体層10の表面10Bから半導体層10の表層部の一部にボロンを導入することで形成されている。高濃度領域42の不純物濃度は、ボディ領域15の不純物濃度よりも濃い。
Claims (2)
- 逆導通IGBTであって、
半導体層と、
前記半導体層の一方の主面を被膜するエミッタ電極と、
前記半導体層の一方の主面から前記半導体層内に向けて伸びる絶縁トレンチゲート部と、を備え、
前記半導体層は、
前記絶縁トレンチゲート部に接する第1導電型のドリフト領域と、
前記ドリフト領域上に設けられており、前記絶縁トレンチゲート部に接する第2導電型のボディ領域と、
前記ボディ領域内に設けられており、前記半導体層の一方の主面から伸びるピラー部を介して前記エミッタ電極と電気的に接続されている第1導電型のバリア領域と、を備え、
前記バリア領域は、
前記ドリフト領域までの距離が第1距離である第1バリア部分領域と、
前記ドリフト領域までの距離が前記第1距離よりも長い第2距離である第2バリア部分領域と、を有し、
前記第2バリア部分領域が、前記絶縁トレンチゲート部の側面に接する、逆導通IGBT。 - 前記半導体層は、
前記ボディ領域内に設けられており、前記第2バリア部分領域の下方に配置されており、その不純物濃度が前記ボディ領域の不純物濃度よりも濃い第2導電型の高濃度領域をさらに有する、請求項1に記載の逆導通IGBT。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014252013A JP6063915B2 (ja) | 2014-12-12 | 2014-12-12 | 逆導通igbt |
US14/925,037 US9520487B2 (en) | 2014-12-12 | 2015-10-28 | Reverse conducting insulated gate bipolar transistor |
CN201510918997.3A CN105702718B (zh) | 2014-12-12 | 2015-12-10 | 反向导通绝缘栅双极性晶体管 |
DE102015121516.0A DE102015121516B4 (de) | 2014-12-12 | 2015-12-10 | Umgekehrt leitender bipolarer Transistor mit isoliertem Gate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2014252013A JP6063915B2 (ja) | 2014-12-12 | 2014-12-12 | 逆導通igbt |
Publications (2)
Publication Number | Publication Date |
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JP2016115766A true JP2016115766A (ja) | 2016-06-23 |
JP6063915B2 JP6063915B2 (ja) | 2017-01-18 |
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JP2014252013A Active JP6063915B2 (ja) | 2014-12-12 | 2014-12-12 | 逆導通igbt |
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US (1) | US9520487B2 (ja) |
JP (1) | JP6063915B2 (ja) |
CN (1) | CN105702718B (ja) |
DE (1) | DE102015121516B4 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015121516A1 (de) | 2014-12-12 | 2016-06-16 | Toyota Jidosha Kabushiki Kaisha | Umgekehrt leitender bipolarer Transistor mit isoliertem Gate |
JP2016225560A (ja) * | 2015-06-03 | 2016-12-28 | トヨタ自動車株式会社 | 半導体装置 |
JP2019161112A (ja) * | 2018-03-15 | 2019-09-19 | トヨタ自動車株式会社 | 半導体装置 |
US11094808B2 (en) | 2017-05-31 | 2021-08-17 | Fuji Electric Co., Ltd. | Semiconductor device |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6164201B2 (ja) * | 2014-11-17 | 2017-07-19 | トヨタ自動車株式会社 | 半導体装置 |
JP2016096307A (ja) * | 2014-11-17 | 2016-05-26 | トヨタ自動車株式会社 | 半導体装置 |
JP6441192B2 (ja) * | 2015-09-11 | 2018-12-19 | 株式会社東芝 | 半導体装置 |
JP6560141B2 (ja) * | 2016-02-26 | 2019-08-14 | トヨタ自動車株式会社 | スイッチング素子 |
JP6560142B2 (ja) * | 2016-02-26 | 2019-08-14 | トヨタ自動車株式会社 | スイッチング素子 |
JP6891560B2 (ja) * | 2017-03-15 | 2021-06-18 | 富士電機株式会社 | 半導体装置 |
DE102017107174B4 (de) | 2017-04-04 | 2020-10-08 | Infineon Technologies Ag | IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT |
JP6740986B2 (ja) | 2017-08-31 | 2020-08-19 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP6946922B2 (ja) * | 2017-10-18 | 2021-10-13 | 株式会社デンソー | 半導体装置 |
DE102017124872B4 (de) | 2017-10-24 | 2021-02-18 | Infineon Technologies Ag | Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit |
DE102017124871B4 (de) | 2017-10-24 | 2021-06-17 | Infineon Technologies Ag | Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung |
JP7003688B2 (ja) | 2018-01-25 | 2022-01-20 | 株式会社デンソー | 半導体装置及びその製造方法 |
CN116632053B (zh) * | 2023-07-25 | 2024-01-30 | 深圳市美浦森半导体有限公司 | 一种rc-igbt器件的控制方法 |
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JP2013048230A (ja) * | 2011-07-27 | 2013-03-07 | Toyota Central R&D Labs Inc | ダイオード、半導体装置およびmosfet |
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CN102779847A (zh) * | 2012-07-18 | 2012-11-14 | 电子科技大学 | 一种载流子存储的沟槽双极型晶体管 |
CN103035521B (zh) * | 2012-11-05 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | 实现少子存储层沟槽型igbt的工艺方法 |
WO2014188569A1 (ja) | 2013-05-23 | 2014-11-27 | トヨタ自動車株式会社 | ダイオード内蔵igbt |
WO2015029116A1 (ja) | 2013-08-26 | 2015-03-05 | トヨタ自動車株式会社 | 半導体装置 |
JP5941448B2 (ja) * | 2013-09-11 | 2016-06-29 | 株式会社東芝 | 半導体装置 |
JP6063915B2 (ja) | 2014-12-12 | 2017-01-18 | 株式会社豊田中央研究所 | 逆導通igbt |
-
2014
- 2014-12-12 JP JP2014252013A patent/JP6063915B2/ja active Active
-
2015
- 2015-10-28 US US14/925,037 patent/US9520487B2/en active Active
- 2015-12-10 CN CN201510918997.3A patent/CN105702718B/zh active Active
- 2015-12-10 DE DE102015121516.0A patent/DE102015121516B4/de active Active
Patent Citations (4)
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JP2005210047A (ja) * | 2003-12-24 | 2005-08-04 | Toyota Central Res & Dev Lab Inc | 半導体装置 |
JP2008251620A (ja) * | 2007-03-29 | 2008-10-16 | Toyota Motor Corp | 半導体装置とその製造方法 |
JP2012049499A (ja) * | 2010-07-27 | 2012-03-08 | Denso Corp | 半導体装置およびその制御方法 |
JP2013048230A (ja) * | 2011-07-27 | 2013-03-07 | Toyota Central R&D Labs Inc | ダイオード、半導体装置およびmosfet |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102015121516A1 (de) | 2014-12-12 | 2016-06-16 | Toyota Jidosha Kabushiki Kaisha | Umgekehrt leitender bipolarer Transistor mit isoliertem Gate |
JP2016225560A (ja) * | 2015-06-03 | 2016-12-28 | トヨタ自動車株式会社 | 半導体装置 |
US11094808B2 (en) | 2017-05-31 | 2021-08-17 | Fuji Electric Co., Ltd. | Semiconductor device |
JP2019161112A (ja) * | 2018-03-15 | 2019-09-19 | トヨタ自動車株式会社 | 半導体装置 |
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Publication number | Publication date |
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US9520487B2 (en) | 2016-12-13 |
CN105702718B (zh) | 2018-10-30 |
US20160172471A1 (en) | 2016-06-16 |
JP6063915B2 (ja) | 2017-01-18 |
DE102015121516B4 (de) | 2019-07-18 |
DE102015121516A1 (de) | 2016-06-16 |
CN105702718A (zh) | 2016-06-22 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |