JP2014175367A - 逆導通igbt - Google Patents
逆導通igbt Download PDFInfo
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- JP2014175367A JP2014175367A JP2013044610A JP2013044610A JP2014175367A JP 2014175367 A JP2014175367 A JP 2014175367A JP 2013044610 A JP2013044610 A JP 2013044610A JP 2013044610 A JP2013044610 A JP 2013044610A JP 2014175367 A JP2014175367 A JP 2014175367A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 210000000746 body region Anatomy 0.000 claims abstract description 26
- 239000012535 impurity Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 35
- 238000005468 ion implantation Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】 逆導通IGBT1の半導体層10は、トレンチゲート30に接しているn型のドリフト領域14、ドリフト領域14上に設けられているとともにトレンチゲート30に接しているp型のボディ領域15、ボディ領域15上に設けられているとともにトレンチゲート30に接しているn型のエミッタ領域17、及びエミッタ領域17上に設けられているとともにエミッタ領域17とエミッタ電極24の間に介在しているp型の介在領域18を有している。
【選択図】図1
Description
(特徴1)本明細書で開示される技術は、IGBT構造が形成されている半導体層内にダイオード構造を一体化させた逆導通IGBTに具現化される。
(特徴2)本明細書で開示される逆導通IGBTは、エミッタ領域上に設けられているとともにエミッタ領域とエミッタ電極の間に介在している介在領域を有していることを特徴としている。
(特徴3)介在領域は、介在領域とエミッタ領域が逆バイアスされているときにパンチスルーするように構成されていてもよい。この形態によると、IGBT構造がオンするときに、介在領域がパンチスルーするので、介在領域とエミッタ領域の間のダイオードが消失する。このため、この形態によると、IGBT構造が良好にオンすることができる。
(特徴4)介在領域の不純物濃度は、エミッタ領域の不純物濃度よりも薄くてもよい。この形態によると、介在領域とエミッタ領域が逆バイアスされているときに、介在領域がパンチスルーし易い。
(特徴5)本明細書で開示される逆導通IGBTの半導体層は、ドリフト領域下の一部に設けられている第2導電型のコレクタ領域、及びドリフト領域下の他の一部に設けられている第1導電型のカソード領域を備えていてもよい。ここで、ドリフト領域下に設けられるコレクタ領域とカソード領域のレイアウトは特に限定されない。一例では、半導体層を特定の断面で観測したときに、コレクタ領域とカソード領域が交互に配置されるレイアウトであってもよい。
(特徴6)本明細書で開示される逆導通IGBTでは、半導体層を平面視したときに、コレクタ領域が存在する範囲をIGBT範囲とし、カソード領域が存在する範囲をダイオード範囲としたときに、介在領域は、少なくともダイオード範囲に設けられていてもよい。より好ましくは、介在領域は、IGBT範囲にも設けられていてもよい。
11:コレクタ領域
12:カソード領域
13:バッファ領域
14:ドリフト領域
15:ボディ領域
16:ボディコンタクト領域
17:エミッタ領域
18:介在領域
22:コレクタ電極
24:エミッタ電極
30:トレンチゲート
32:トレンチゲート電極
34:ゲート絶縁膜
Claims (7)
- 逆導通IGBTであって、
半導体層と、
絶縁ゲートと、
前記半導体層の表面に設けられているエミッタ電極と、を備えており、
前記半導体層は、
前記絶縁ゲートに接している第1導電型のドリフト領域と、
前記ドリフト領域上に設けられており、前記絶縁ゲートに接している第2導電型のボディ領域と、
前記ボディ領域上に設けられており、前記絶縁ゲートに接している第1導電型のエミッタ領域と、
前記エミッタ領域上に設けられており、前記エミッタ領域と前記エミッタ電極の間に介在している第2導電型の介在領域と、を有している逆導通IGBT。 - 前記介在領域は、前記介在領域と前記エミッタ領域が逆バイアスされたときにパンチスルーするように構成されている請求項1に記載の逆導通IGBT。
- 前記介在領域の不純物濃度は、前記エミッタ領域の不純物濃度よりも薄い請求項1又は2に記載の逆導通IGBT。
- 前記半導体層は、
前記ドリフト領域下の一部に設けられている第2導電型のコレクタ領域と、
前記ドリフト領域下の他の一部に設けられている第1導電型のカソード領域と、をさらに有する請求項1〜3のいずれか一項に記載の逆導通IGBT。 - 前記半導体層を平面視したときに、前記コレクタ領域が存在する範囲をIGBT範囲とし、前記カソード領域が存在する範囲をダイオード範囲としたときに、前記介在領域は、少なくとも前記ダイオード範囲に設けられている請求項4に記載の逆導通IGBT。
- 前記介在領域は、前記IGBT範囲にも設けられている請求項5に記載の逆導通IGBT。
- 前記絶縁ゲートは、前記半導体層の前記表面から深部に向けて伸びているトレンチゲートを有する請求項1〜6のいずれか一項に記載の逆導通IGBT。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013044610A JP6102354B2 (ja) | 2013-03-06 | 2013-03-06 | 逆導通igbt |
US14/182,923 US9099521B2 (en) | 2013-03-06 | 2014-02-18 | Reverse conducting IGBT |
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---|---|---|---|
JP2013044610A JP6102354B2 (ja) | 2013-03-06 | 2013-03-06 | 逆導通igbt |
Publications (2)
Publication Number | Publication Date |
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JP2014175367A true JP2014175367A (ja) | 2014-09-22 |
JP6102354B2 JP6102354B2 (ja) | 2017-03-29 |
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JP2013044610A Expired - Fee Related JP6102354B2 (ja) | 2013-03-06 | 2013-03-06 | 逆導通igbt |
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US (1) | US9099521B2 (ja) |
JP (1) | JP6102354B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015095467A (ja) * | 2013-11-08 | 2015-05-18 | 株式会社豊田中央研究所 | 逆導通igbt |
JP2020088878A (ja) * | 2018-11-15 | 2020-06-04 | 三菱電機株式会社 | スイッチング素子の制御装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104659112A (zh) * | 2015-03-09 | 2015-05-27 | 江苏中科君芯科技有限公司 | 降低动态损耗的沟槽式二极管结构 |
JP6514035B2 (ja) * | 2015-05-27 | 2019-05-15 | 株式会社豊田中央研究所 | 半導体装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006120789A (ja) * | 2004-10-20 | 2006-05-11 | Toshiba Corp | 半導体装置 |
JP2007242873A (ja) * | 2006-03-08 | 2007-09-20 | Toyota Industries Corp | 半導体装置 |
JP2008072848A (ja) * | 2006-09-14 | 2008-03-27 | Mitsubishi Electric Corp | 半導体装置 |
JP2009021557A (ja) * | 2007-06-14 | 2009-01-29 | Denso Corp | 半導体装置 |
JP2010118642A (ja) * | 2008-10-14 | 2010-05-27 | Denso Corp | 半導体装置 |
JP2013033919A (ja) * | 2011-07-04 | 2013-02-14 | Denso Corp | 半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4924578B2 (ja) | 2007-09-05 | 2012-04-25 | 株式会社デンソー | 半導体装置 |
US8384151B2 (en) * | 2011-01-17 | 2013-02-26 | Infineon Technologies Austria Ag | Semiconductor device and a reverse conducting IGBT |
JP2014075582A (ja) * | 2012-09-12 | 2014-04-24 | Fuji Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
-
2013
- 2013-03-06 JP JP2013044610A patent/JP6102354B2/ja not_active Expired - Fee Related
-
2014
- 2014-02-18 US US14/182,923 patent/US9099521B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006120789A (ja) * | 2004-10-20 | 2006-05-11 | Toshiba Corp | 半導体装置 |
JP2007242873A (ja) * | 2006-03-08 | 2007-09-20 | Toyota Industries Corp | 半導体装置 |
JP2008072848A (ja) * | 2006-09-14 | 2008-03-27 | Mitsubishi Electric Corp | 半導体装置 |
JP2009021557A (ja) * | 2007-06-14 | 2009-01-29 | Denso Corp | 半導体装置 |
JP2010118642A (ja) * | 2008-10-14 | 2010-05-27 | Denso Corp | 半導体装置 |
JP2013033919A (ja) * | 2011-07-04 | 2013-02-14 | Denso Corp | 半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015095467A (ja) * | 2013-11-08 | 2015-05-18 | 株式会社豊田中央研究所 | 逆導通igbt |
JP2020088878A (ja) * | 2018-11-15 | 2020-06-04 | 三菱電機株式会社 | スイッチング素子の制御装置 |
JP6999533B2 (ja) | 2018-11-15 | 2022-01-18 | 三菱電機株式会社 | スイッチング素子の制御装置 |
Also Published As
Publication number | Publication date |
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JP6102354B2 (ja) | 2017-03-29 |
US9099521B2 (en) | 2015-08-04 |
US20140252408A1 (en) | 2014-09-11 |
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