JP2016012604A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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Abstract
Description
まず本実施の形態の半導体装置の構成としてパワーモジュールの構成について図1〜図2を用いて説明する。図1を参照して、本実施の形態のパワーモジュール100は、基板1と、半導体チップ2と、筒状電極3と、モールド樹脂4(樹脂材料)とを主に有している。なお図1においては図を見やすくする観点から、モールド樹脂4は想像線で示している。また図2以降の断面図においては、理解を容易にする観点から、当該図が示す部分の奥に見える後述のワイヤ配線9を加えたものを示している。
図3(A)、(B)を参照して、筒状電極3は、その延在方向に関する一方(はんだ8により接着される図の下側)の端部である下方端部11から、これと反対側の他方(図の上側)の端部である上方端部12に向けて、その外周の平面視における大きさ(図3の左右方向の寸法)が徐々に小さくなるように傾斜した形状を有している。なお筒状電極3の平面形状は、たとえば円形状であってもよいが、正方形状など多角形状であってもよい。
本実施の形態においては、筒状電極3の上方端部12が塞がれた状態で樹脂封止がなされるため、モールド樹脂4が上方端部12から筒状電極3の空洞部14内に進入することが抑制される。
Claims (6)
- 基板の一方の主表面上に、半導体チップと、筒状電極とを実装する工程と、
前記筒状電極の、前記基板に実装される一方の端部と反対側の他方の端部が少なくとも露出するように、前記基板、前記半導体チップおよび前記筒状電極を樹脂材料により封止する工程と、
前記封止する工程の後に、前記筒状電極の、前記他方の端部から前記筒状電極内の空洞部に通じる開口を形成する工程とを備え、
前記開口を形成する工程を行なう前においては、前記筒状電極の前記他方の端部は塞がっている、半導体装置の製造方法。 - 前記筒状電極は、前記一方の端部側にフランジを含むように形成され、
前記筒状電極は、前記フランジにおいて前記基板に実装される、請求項1に記載の半導体装置の製造方法。 - 前記筒状電極の外周は、前記筒状電極の外周の平面視における大きさが、前記一方の端部側から前記他方の端部側に向けて徐々に小さくなるように傾斜している、請求項1または請求項2に記載の半導体装置の製造方法。
- 前記開口を形成する工程を行なう前においては、前記筒状電極は、前記他方の端部の肉厚が、前記空洞部と平面視において重なる領域の少なくとも一部の真上において前記重なる領域以外の領域よりも薄くなっている、請求項1〜請求項3のいずれか1項に記載の半導体装置の製造方法。
- 前記開口を形成する工程を行なう前においては、前記筒状電極は、前記他方の端部の肉厚が、前記空洞部の外周の真上において前記空洞部の外周の真上以外の領域よりも薄くなっている、請求項4に記載の半導体装置の製造方法。
- 前記筒状電極を実装する工程は、単一の治具により複数の前記筒状電極を保持する工程と、
前記治具が複数の前記筒状電極を一括して前記基板の一方の主表面上に供給する工程とを含む、請求項1〜請求項5のいずれか1項に記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014132430A JP6249892B2 (ja) | 2014-06-27 | 2014-06-27 | 半導体装置の製造方法 |
US14/665,577 US9437460B2 (en) | 2014-06-27 | 2015-03-23 | Method for manufacturing semiconductor device |
DE102015210603.9A DE102015210603B4 (de) | 2014-06-27 | 2015-06-10 | Verfahren zur Herstellung einer Halbleitervorrichtung |
CN201510363009.3A CN105225971B (zh) | 2014-06-27 | 2015-06-26 | 半导体装置的制造方法 |
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US10522435B2 (en) | 2016-03-18 | 2019-12-31 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing the semiconductor device |
JP2020047377A (ja) * | 2018-09-14 | 2020-03-26 | 富士電機株式会社 | 半導体装置、半導体装置の製造方法 |
US11171078B2 (en) | 2019-07-19 | 2021-11-09 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing the same |
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US10062621B2 (en) * | 2016-04-30 | 2018-08-28 | Ixys, Llc | Power semiconductor device module having mechanical corner press-fit anchors |
US10347549B2 (en) * | 2016-04-30 | 2019-07-09 | Littelfuse, Inc. | Power semiconductor device module having mechanical corner press-fit anchors |
CN109417068B (zh) * | 2017-01-17 | 2022-05-06 | 富士电机株式会社 | 半导体装置 |
DE112017007673B4 (de) * | 2017-06-21 | 2022-08-18 | Mitsubishi Electric Corporation | Halbleitereinrichtung, Leistungsumwandlungsvorrichtung und Verfahren zum Herstellen einer Halbleitereinrichtung |
CN107946273A (zh) * | 2017-12-22 | 2018-04-20 | 江苏宏微科技股份有限公司 | 一种插接功率模块封装装置 |
JP7279354B2 (ja) * | 2018-12-17 | 2023-05-23 | 富士電機株式会社 | 半導体素子及び半導体素子の識別方法 |
JP7404834B2 (ja) * | 2019-12-06 | 2023-12-26 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
US11901273B2 (en) * | 2021-07-26 | 2024-02-13 | Infineon Technologies Ag | Power module with press-fit contacts |
US20240170378A1 (en) * | 2022-11-17 | 2024-05-23 | Semiconductor Components Industries, Llc | Power module package with molded via and dual side press-fit pin |
WO2024110052A1 (en) * | 2022-11-25 | 2024-05-30 | Huawei Digital Power Technologies Co., Ltd. | Molded power module |
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US9437460B2 (en) | 2016-09-06 |
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