JP2015072942A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2015072942A JP2015072942A JP2013206560A JP2013206560A JP2015072942A JP 2015072942 A JP2015072942 A JP 2015072942A JP 2013206560 A JP2013206560 A JP 2013206560A JP 2013206560 A JP2013206560 A JP 2013206560A JP 2015072942 A JP2015072942 A JP 2015072942A
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- semiconductor device
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Abstract
Description
集積回路が形成された半導体基板の場合では、ディスクリート等と異なり、複数の電極パッドが形成されているため、配線のデザインルールに制限がある。つまり、ある一つの電極パッドを大型化した場合、他の電極パッドは、当該一つの電極パッドを迂回するように形成する必要が生じ、それに伴って、各電極パッドに接続される引き回し配線およびボンディングワイヤの長さも調整しなければならなくなる。そのため、配線経路が長距離化し、それに応じて半導体チップの抵抗値が増加してしまう。
一方、電極パッドは、ボンディングワイヤ等の接合部材の太さとは切り離して設計できる。つまり、電極パッドを配線のデザインルールに従って適切なパターンで形成できる。その結果、配線経路の長距離化等を防止できるので、半導体チップにおける抵抗値の増加を抑制できる。
また、請求項3に記載の発明は、前記再配線は、前記半導体チップの表面に沿う方向において、互いに間隔を空けて前記半導体チップ上に複数形成されている、請求項1または2に記載の半導体装置である。
また、請求項4に記載の発明は、前記樹脂パッケージに選択的に封止されたリードと、前記樹脂パッケージに封止され、前記再配線と前記リードとを電気的に接続するための接合部材とを含む、請求項1〜3のいずれか一項に記載の半導体装置である。
この構成によれば、板状導電体により再配線とリードとを電気的に接続できるので、半導体チップ−樹脂パッケージ間の抵抗値を効果的に低減できる。
また、請求項6に記載の発明のように、前記半導体チップは、前記再配線が形成された面を上方に向く姿勢で、前記接合部材に接続されていてもよい。
この構成によれば、半田を用いて再配線と接合部材とを容易に接続できる。
また、請求項8に記載の発明は、前記再配線の表面から突出するように形成された柱状のポストをさらに含む、請求項6または7に記載の半導体装置である。
また、請求項10に記載の発明は、前記再配線の表面から突出するように形成された柱状のポストをさらに含む、請求項9に記載の半導体装置である。
また、請求項11に記載の発明は、前記ポストは、前記接合部材に直接接続されている、請求項10に記載の半導体装置である。
この構成によれば、半田を用いて再配線と接合部材とを容易に接続できる。また、再配線にポストが形成されている場合には、半田が溶融した際に生じる熱応力をポストで吸収できるので、当該熱応力が再配線や接合部材等に及ぶことを効果的に抑制できる。これにより、半導体チップと接合部材との接続強度をより一層高めることができる。
また、前記ポストは、請求項14に記載の発明のように、前記ポストは、前記電極パッドが形成された領域を回避するように形成されていることが好ましい。
この場合、ポストと接合部材とを接続する際の圧力が電極パッドに直接伝わらないため、電極パッドと集積回路との接続を良好に保つことができる。
この構成によれば、ポストがNiめっき、またはNi/Pd(ニッケル/パラジウム)めっきに覆われているので、ポストに対する半田の濡れ性を向上させることができる。また、ポストと接合部材とを半田によって接続する際に、当該ポストに半田が浸食することを効果的に抑制できる。これにより、ポストと接合部材との接続強度を高めることができる。
この構成によれば、配線パッド開口内に半田を収めるためのスペースを確保できる。そのため、半導体装置の製造工程において、半田が溶融した際に、隣接する配線パッドに半田流れ込むことを効果的に抑制できる。
また、請求項19に記載の発明のように、前記再配線は、CuまたはAlを含む金属材料からなることが好ましい。
この構成によれば、再配線がNiめっき、またはNi/Pd(ニッケル/パラジウム)めっきに覆われているので、再配線に対する半田の濡れ性を向上させることができる。また、Cuからなる再配線が形成された場合、再配線と接合部材とを半田によって接続する際に、当該再配線に半田が浸食することを効果的に抑制できる。これにより、再配線と接合部材との接続強度を高めることができる。
また、請求項22に記載の発明のように、前記電極パッドは、Alを含む金属材料からなることが好ましい。
図1は、本発明の第1実施形態に係る半導体装置1の内部を示す模式的な平面図である。図2は、図1に示す半導体装置1の模式的な断面図である。
図1および図2に示すように半導体装置1は、本発明の半導体チップの一例としての集積回路が形成された半導体チップ4と、半導体チップ4をマウントするためのアイランド5と、複数のリード3と、これらを封止する樹脂パッケージ2とを含む。樹脂パッケージ2は、たとえばエポキシ樹脂からなる。
複数の再配線20は、この実施形態では、互いに面積が異なる3つの再配線20を含む。各再配線20は、複数の第1電極パッド17を覆うように配置され、その下方に配置された複数の第1電極パッド17に一括して電気的に接続されている。各再配線20は、この実施形態では、平面視略四角形状に形成されていて、第1電極パッド17よりも広い面積で半導体チップ4の最表面に露出している。各再配線20は、配線領域15において互いに間隔を空けて形成されており、電気的に分離されている。これにより各再配線20には、他の再配線20の電圧から独立した値の電圧を印加することができる。
半導体チップ4は、集積回路が形成されたシリコン基板と、シリコン基板上に形成された多層配線構造とを含む。この多層配線構造を覆うように、図3Aおよび図3Bに示すパッシベーション膜24および保護膜25がこの順に堆積されている。パッシベーション膜24および保護膜25には、第1パッド開口26および第2パッド開口34が形成されており、第1パッド開口26および第2パッド開口34から多層配線構造の最上層配線の一部が第1電極パッド17および第2電極パッド18として露出している。
UBM膜27は、図3Aに示すように、保護膜25の表面、第1パッド開口26の内面、および第1電極パッド17の表面に沿って形成されている。換言すると、UBM膜27は、保護膜25の表面から、第1パッド開口26内に入り込むように形成されていて、当該第1パッド開口26内において第1電極パッド17と電気的に接続されている。また、UBM膜27は、図1の平面視において各再配線20と同一面積で形成されていて、その側面が再配線20の側面と面一になるように形成されている。つまり、UBM膜27は、複数の第1電極パッド17を一括して覆うように保護膜25上に形成されている。また、UBM膜27は、異なる金属材料からなる2層構造を有していて、この順により形成されたCuを含有するCu膜28と、Ti(チタン)を含有するTi膜29とを含む。
一方、第2パッド開口34は、この実施形態では、平面視略四角形状に形成されていて、これにより、第2電極パッド18も平面視略四角形状に形成されている。第2電極パッド18は、たとえばAlを含む金属材料からなる。ボンディングワイヤ8は、第2パッド開口34に入り込み、半導体チップ4の最表面に露出する第2電極パッド18に接続されている。
まず、半導体装置1を形成するためには、図4Aに示すように、集積回路が形成されたシリコン基板上に多層配線構造が形成される。次に、パッシベーション膜24および保護膜25が多層配線構造を覆うようにこの順に形成される。次に、パッシベーション膜24および保護膜25が選択的にエッチングされて、多層配線構造の最上層配線の一部を露出させる複数の第1パッド開口26および第2パッド開口34が形成される。これにより、パッシベーション膜24および保護膜25から多層配線構造の最上層配線の一部が第1電極パッド17および第2電極パッド18として露出する。
次に、図4Cに示すように、再配線20を形成すべき領域に選択的に開口を有するレジストマスク35がUBM膜27上にパターニングされる。次に、レジストマスク35を介して、AlまたはCuがUBM膜27上にめっき成膜される。これにより再配線20がUBM膜27上に形成される。再配線20が形成された後、レジストマスク35は除去される。
次に、図4Eに示すように、再配線20および保護膜25上にポリイミドが堆積される。次に、各再配線20の表面を配線パッド31として選択的に露出させるようにポリイミドがパターニングされる。これにより、配線パッド開口32を有する再配線用保護膜33が形成される。
以上のように、半導体装置1の構成によれば、第1電極パッド17よりも広い面積を有する再配線20が一括して複数の第1電極パッド17に接続されているので、第1電極パッド17に電力を供給するための接合部材として、第1電極パッド17の面積よりも大きいクリップ9を使用することができる。これにより、第1電極パッド17のそれぞれにボンディングワイヤ8を接続する場合に比べて半導体チップ4−樹脂パッケージ2間の抵抗値を低減できる。
図5は、本発明の第2実施形態に係る半導体装置41の配線領域15を示す模式的な拡大断面図である。
以上のように、半導体装置41の構成によっても、前述の第1実施形態において述べた効果と同様の効果を奏することができる。
第3実施形態に係る半導体装置47が、前述の第1実施形態に係る半導体装置1と異なる点は、クリップ9が金属フレーム49を介してインナーリード6に接続されている点、および配線パッド31上に複数のポスト50が形成されている点である。その他の構成は、第1実施形態に係る半導体装置1の構成と同等である。図6および図7において、前述の図1〜図5に示された各部と対応する部分には同一の参照符号を付して、説明を省略する。
図6および図7に示すように、各配線パッド31上には、各配線パッド31の表面から再配線用保護膜33の表面よりも上方に向けて突出するように柱状のポスト50が形成されている。
各ポスト50は、この実施形態では円柱状に形成されていて、その直径φは、たとえば25μm〜200μmである。また、各ポスト50は、一定の高さで形成されており、その高さhは、たとえば10μm〜50μmである。各ポスト50は、半田21よりも比較的に硬い金属材料により形成されていることが好ましく、たとえば、Cuを含む金属材料からなる。
図8A〜図8Fは、図6に示す半導体装置47の製造工程の一例を説明するための断面図である。
第3実施形態に係る半導体装置47の製造工程では、図4Eの工程後、図8Aに示すように、前述のUBM膜27を形成する工程(図4B参照)と同様の工程で、Cu膜64とTi膜65とがこの順にめっき成膜される。これにより、UBM膜52が配線パッド31を覆うように再配線用保護膜33上に形成される。
次に、図8Cに示すように、ドライフィルム53の開口を埋め戻すように、CuまたはAlがめっき成膜される。これにより、ポスト50が形成される。ポスト50が形成された後、ドライフィルム53およびUBM膜52が除去される。
以上のように、半導体装置47の構成によっても、前述の第1実施形態において述べた効果と同様の効果を奏することができる。
第4実施形態に係る半導体装置55が、前述の第3実施形態に係る半導体装置47と異なる点は、各配線パッド31および各ポスト50を覆うように金属めっき膜56が形成されている点である。その他の構成は、第3実施形態に係る半導体装置47の構成と同等である。図9において、前述の図1〜図8Dに示された各部と対応する部分には同一の参照符号を付して、説明を省略する。
また、半導体装置55によれば、ポスト50が金属めっき膜56に覆われているので、ポスト50に対する半田21の濡れ性を向上させることができる。また、ポスト50とクリップ9とを接続する際に、ポスト50に半田21が浸食することを効果的に抑制できる。これにより、ポスト50とクリップ9との接続強度をより一層高めることができる。
第5実施形態に係る半導体装置58が、前述の第3実施形態に係る半導体装置47と異なる点は、再配線用保護膜33に代えて、再配線20を覆う再配線用保護膜59が形成されている点、および当該再配線用保護膜59を貫通して再配線20と接続されるようにポスト60が形成されている点である。その他の構成は、第3実施形態に係る半導体装置47の構成と同等である。図10において、前述の図1〜図9に示された各部と対応する部分には同一の参照符号を付して、説明を省略する。
図11は、本発明の第6実施形態に係る半導体装置62の配線領域15を示す模式的な拡大断面図である。
第6実施形態に係る半導体装置62が、前述の第5実施形態に係る半導体装置58と異なる点は、ポスト60の再配線用保護膜59から突出する部分を覆うように金属めっき膜63が形成されている点である。その他の構成は、第5実施形態に係る半導体装置58の構成と同等である。図11において、前述の図1〜図10に示された各部と対応する部分には同一の参照符号を付して、説明を省略する。
また、半導体装置62の構成によれば、ポスト60の再配線用保護膜59から突出する部分が金属めっき膜63に覆われているので、当該部分に対する半田21の濡れ性を向上させることができる。また、ポスト60とクリップ9とを接続する際に、ポスト60に半田21が浸食することを効果的に抑制できる。これにより、ポスト60とクリップ9との接続強度を高めることができる。
第7実施形態に係る半導体装置66が、前述の第1実施形態に係る半導体装置1と異なる点は、本発明の接合部材(板状導電体)の一例としての配線プレート69がインナーリード6に接続されている点、信号領域16に信号領域用再配線67が形成されている点、再配線用保護膜33に代えて、配線領域15および信号領域16を選択的に覆うように再配線用保護膜72が形成されている点、および半導体チップ4が、配線プレート69にフリップチップ接続されている点である。その他の構成は、第1実施形態に係る半導体装置1の構成と同等である。図12〜図14Bにおいて、前述の図1〜図11に示された各部と対応する部分には同一の参照符号を付して、説明を省略する。
複数の信号領域用再配線67は、この実施形態では、互いに面積が異なる4つの信号領域用再配線67を含む。各信号領域用再配線67は、複数の第2電極パッド18を覆うように配置され、その下方に配置された複数の第2電極パッド18に一括して電気的に接続されている。各信号領域用再配線67は、平面視四角形状に形成されていて、各第2電極パッド18よりも広い面積で半導体チップ4の最表面に露出している。各信号領域用再配線67は、信号領域16において互いに間隔を空けて形成されており、電気的に分離されている。これにより各信号領域用再配線67には、他の信号領域用再配線67の電圧から独立した値の電圧を印加することができる。
配線プレート69は、半田21を介して、インナーリード6、各再配線20および各信号領域用再配線67にそれぞれ接続されている。配線プレート69は、たとえば四角形状の金属プレートを複数組み合わせた多角形状に形成されている。図12の平面視における配線プレート69の表面積は、たとえば前述の第1実施形態のクリップ9と同様、0.25mm2(正方形に換算すると0.5mm×0.5mm)以上であることが好ましい。
第7実施形態に係る配線領域15の構成は、図14Aに示すように、再配線用保護膜33に代えて、各再配線20の表面を配線パッド31として選択的に露出させる配線パッド開口32を有する再配線用保護膜72が形成されている点、および配線パッド31が半田21を介して配線プレート69にフリップチップ接続されている点を除き、前述の第1実施形態に係る配線領域15と同様の構成である。
信号領域16における第2電極パッド18は、信号領域用UBM膜73を介して信号領域用再配線67に電気的に接続されている。
各配線パッド31(各再配線20)および信号領域用配線パッド70(各信号領域用再配線67)は、半田21を介して配線プレート69に接続されている。配線プレート69の厚さT2は、たとえば50μm〜400μmである。配線プレート69は、たとえばCu等を含む導電材料からなる。
以上のように、半導体装置66の構成によれば、第1電極パッド17および第2電極パッド18よりも広い面積を有する再配線20および信号領域用再配線67が一括して各電極パッド17,18に接続されているので、各電極パッド17,18に電力を供給するための接合部材として、各電極パッド17,18の面積よりも大きい配線プレート69を使用できる。これにより、各電極パッド17,18のそれぞれにボンディングワイヤ8を接続する場合に比べて半導体チップ4−樹脂パッケージ2間の抵抗値を低減できる。
第8実施形態に係る半導体装置74が、前述の第7実施形態に係る半導体装置66と異なる点は、配線パッド31上および信号領域用配線パッド70上に金属めっき膜75が形成されている点である。その他の構成は、第7実施形態に係る半導体装置66の構成と同等である。図15において、前述の図1〜図14Bに示された各部と対応する部分には同一の参照符号を付して、説明を省略する。なお、信号領域16の構成は、配線領域15の構成と同様の構成であるので、図面を省略している。
以上のように、半導体装置74の構成によっても、前述の第7実施形態において述べた効果と同様の効果を奏することができる。
また、Cuからなる再配線20および信号領域用再配線67を形成した場合、再配線20および信号領域用再配線67と、配線プレート69とを接続する際に、再配線20および信号領域用再配線67に半田21が浸食することを効果的に抑制できる。これにより、半導体チップ4と配線プレート69との接続強度を高めることができる。
第9実施形態に係る半導体装置77が、前述の第7実施形態に係る半導体装置66と異なる点は、配線パッド31上および信号領域用配線パッド70上に複数のポスト78が形成されている点である。その他の構成は、第7実施形態に係る半導体装置66の構成と同等である。図16および図17において、前述の図1〜図15に示された各部と対応する部分には同一の参照符号を付して、説明を省略する。
また、半導体装置77の構成によれば、半導体チップ4は、一定の高さhを有するポスト78および半田21により、配線プレート69と接続されている。これにより、配線プレート69に配線パッド31および信号領域用配線パッド70が接続された際に、アライメントずれが生じること、および半導体チップ4が傾いた状態で接続されることを効果的に抑制できる。つまり、この半導体装置77の構成によれば、セルフアライメントおよびレベリングに強い半導体装置を提供することができる。
図18は、本発明の第10実施形態に係る半導体装置81の配線領域15を示す模式的な拡大断面図である。
以上のように、半導体装置81の構成によっても、前述の第7〜第9実施形態において述べた効果と同様の効果を奏することができる。
また、半導体装置81の構成によれば、各配線パッド31、各信号領域用配線パッド70、およびポスト78が金属めっき膜82に覆われているので、各配線パッド31、各信号領域用配線パッド70、およびポスト78に対する半田21の濡れ性を向上させることができる。また、ポスト78と配線プレート69とを接続する際に、各配線パッド31、各信号領域用配線パッド70、およびポスト78に半田21が浸食することを効果的に抑制できる。これにより、半導体チップ4と配線プレート69との接続強度を高めることができる。
第11実施形態に係る半導体装置84が、前述の第9実施形態に係る半導体装置77と異なる点は、再配線用保護膜72に代えて、再配線20および信号領域用再配線67を覆う再配線用保護膜85が形成されている点、および、配線領域15および信号領域16において、当該再配線用保護膜85を貫通して配線パッド31および信号領域用配線パッド70と接続されるようにポスト86が形成されている点である。その他の構成は、第9実施形態に係る半導体装置77の構成と同等である。図11において、前述の図1〜図18に示された各部と対応する部分には同一の参照符号を付して、説明を省略する。
図20は、本発明の第12実施形態に係る半導体装置88の配線領域15を示す模式的な拡大断面図である。
第12実施形態に係る半導体装置88が、前述の第11実施形態に係る半導体装置84と異なる点は、ポスト86の再配線用保護膜85から突出する部分を覆うように金属めっき膜89が形成されている点である。その他の構成は、第11実施形態に係る半導体装置84の構成と同等である。図20において、前述の図1〜図19に示された各部と対応する部分には同一の参照符号を付して、説明を省略する。
以上のように、半導体装置88の構成によっても、前述の第9実施形態において述べた効果と同様の効果を奏することができる。
また、半導体装置88の構成によれば、ポスト86の再配線用保護膜85から突出する部分が金属めっき膜89に覆われているので、当該部分に対する半田21の濡れ性を向上させることができる。また、ポスト86と配線プレート69とを接続する際に、ポスト86に半田21が浸食することを効果的に抑制できる。これにより、半導体チップ4と配線プレート69との接続強度を高めることができる。
第13実施形態に係る半導体装置101が、前述の第7実施形態に係る半導体装置66と異なる点は、再配線用保護膜72が形成されていない点、および半導体チップ4が、半田21を介さずに配線プレート69に直接フリップチップ接続されている点である。その他の構成は、第7実施形態に係る半導体装置66の構成と同等である。図21において、前述の図1〜図20に示された各部と対応する部分には同一の参照符号を付して、説明を省略する。
図23は、本発明の第14実施形態に係る半導体装置104の配線領域15を示す模式的な拡大断面図である。
第14実施形態に係る半導体装置104が、前述の第8実施形態に係る半導体装置74と異なる点は、再配線用保護膜72が形成されていない点、および半導体チップ4が、金属めっき膜75を介して配線プレート69に直接フリップチップ接続されている点である。その他の構成は、前述の第8実施形態に係る半導体装置74の構成と同等である。図23において、前述の図1〜図22に示された各部と対応する部分には同一の参照符号を付して、説明を省略する。
図24は、本発明の第15実施形態に係る半導体装置108の配線領域15を示す模式的な拡大断面図である。
第15実施形態に係る半導体装置108が、前述の第9実施形態に係る半導体装置77と異なる点は、再配線用保護膜72が形成されていない点、および半導体チップ4がポスト78を介して配線プレート69に直接フリップチップ接続されている点である。その他の構成は、前述の第9実施形態に係る半導体装置77の構成と同等である。図24において、前述の図1〜図23に示された各部と対応する部分には同一の参照符号を付して、説明を省略する。
また、半導体装置108の構成によれば、半導体チップ4は、一定の高さhを有するポスト78により、配線プレート69と接続されている。これにより、配線プレート69に配線パッド31および信号領域用配線パッド70が接続された際に、アライメントずれが生じること、および半導体チップ4が傾いた状態で接続されることを効果的に抑制できる。つまり、この半導体装置108の構成によれば、セルフアライメントおよびレベリングに強い半導体装置を提供することができる。
第16実施形態に係る半導体装置111が、前述の第10実施形態に係る半導体装置81と異なる点は、半導体チップ4が、ポスト78および金属めっき膜82を介して配線プレート69に直接フリップチップ接続されている点である。その他の構成は、前述の第10実施形態に係る半導体装置81の構成と同等である。図25において、前述の図1〜図24に示された各部と対応する部分には同一の参照符号を付して、説明を省略する。
図26は、本発明の第17実施形態に係る半導体装置112の配線領域15を示す模式的な拡大断面図である。
図27は、本発明の第18実施形態に係る半導体装置113の配線領域15を示す模式的な拡大断面図である。
第18実施形態に係る半導体装置113が、前述の第12実施形態に係る半導体装置88と異なる点は、半導体チップ4が、ポスト78および金属めっき膜89を介して配線プレート69に直接フリップチップ接続されている点である。その他の構成は、第12実施形態に係る半導体装置88の構成と同等である。図27において、前述の図1〜図26に示された各部と対応する部分には同一の参照符号を付して、説明を省略する。
以上、この発明の実施形態について説明したが、この発明はさらに他の形態で実施することもできる。
たとえば、前述の各実施形態では、リード3が、インナーリード6とアウターリード7とを含む例について説明したが、樹脂パッケージ2内にリードの全体が封止された裏面実装タイプの半導体装置が採用されてもよい。この場合、図28および図29に示す構成を採用してもよい。
変形例に係る半導体装置116が、前述の第1実施形態に係る半導体装置1と異なる点は、リード3に代えて、樹脂パッケージ117内にリード118が封止された裏面実装タイプの半導体装置の構成が採用されている点である。その他の構成は、第1実施形態に係る半導体装置1の構成と同等である。図28において、前述の図1〜図27に示された各部と対応する部分には同一の参照符号を付して、説明を省略する。なお、図28および図29では、説明の便宜上、半導体装置116を第1実施形態に係る半導体装置1の変形例として説明するが、むろん、当該半導体装置116の構成を前述の各実施形態の構成に組み合わせてもよい。
また、前述の第1〜第6実施形態では、半田21を介してクリップ9と配線パッド31とを接続する構成について説明したが、前述の第13〜第18実施形態の構成のようにクリップ9を直接再配線20に電気的に接続する構成を採用してもよい。
また、前述の第7〜第13実施形態では、半導体チップ4が配線プレート69にフリップチップ接続される例について説明したが、半導体チップ4がインナーリード6にフリップチップ接続される構成を採用してもよい。
また、前述の各実施形態では、UBM膜27,73を介して第1および第2電極パッド17,18と各再配線20,67とを電気的に接続する例について説明したが、第1および第2電極パッド17,18と各再配線20,67とを直接電気的に接続する構成を採用してもよい。
2 樹脂パッケージ
3 リード
4 半導体チップ
5 アイランド
9 クリップ
17 第1電極パッド
20 再配線
27 UBM膜
31 配線パッド
33 再配線用保護膜
41 半導体装置
42 金属めっき膜
47 半導体装置
50 ポスト
52 UBM膜
55 半導体装置
56 金属めっき膜
58 半導体装置
59 再配線用保護膜
60 ポスト
62 半導体装置
63 金属めっき膜
66 半導体装置
67 信号領域用再配線
69 配線プレート
70 信号領域用配線パッド
71 信号領域用配線パッド開口
72 再配線用保護膜
73 信号領域用UBM膜
74 半導体装置
75 金属めっき膜
77 半導体装置
78 ポスト
81 半導体装置
82 金属めっき膜
84 半導体装置
85 再配線用保護膜
86 ポスト
88 半導体装置
89 金属めっき膜
101 半導体装置
104 半導体装置
108 半導体装置
111 半導体装置
112 半導体装置
113 半導体装置
116 半導体装置
117 樹脂パッケージ
118 リード
120 クリップ
Claims (22)
- 集積回路が形成された半導体チップと、
前記半導体チップ上に形成され、それぞれが前記集積回路に接続された複数の電極パッドと、
前記複数の電極パッドに一括して電気的に接続され、各前記電極パッドよりも広い面積で前記半導体チップの最表面に露出する再配線と、
前記半導体チップを封止する樹脂パッケージとを含む、半導体装置。 - 前記再配線は、前記複数の電極パッドを覆うように形成されている、請求項1に記載の半導体装置。
- 前記再配線は、前記半導体チップの表面に沿う方向において、互いに間隔を空けて前記半導体チップ上に複数形成されている、請求項1または2に記載の半導体装置。
- 前記樹脂パッケージに選択的に封止されたリードと、
前記樹脂パッケージに封止され、前記再配線と前記リードとを電気的に接続するための接合部材とを含む、請求項1〜3のいずれか一項に記載の半導体装置。 - 前記接合部材は、板状導電体を含む、請求項4に記載の半導体装置。
- 前記半導体チップは、前記再配線が形成された面を上方に向く姿勢で、前記接合部材に接続されている、請求項4または5に記載の半導体装置。
- 前記再配線は、半田を介して、前記接合部材に接続されている、請求項6に記載の半導体装置。
- 前記再配線の表面から突出するように形成された柱状のポストをさらに含む、請求項6または7に記載の半導体装置。
- 前記半導体チップは、前記再配線が形成された面を下方に向く姿勢で、前記接合部材に接続されている、請求項4または5に記載の半導体装置。
- 前記再配線の表面から突出するように形成された柱状のポストをさらに含む、請求項9に記載の半導体装置。
- 前記ポストは、前記接合部材に直接接続されている、請求項10に記載の半導体装置。
- 前記再配線は、半田を介して、前記接合部材に接続されている、請求項9〜11のいずれか一項に記載の半導体装置。
- 前記ポストは、アレイ状に複数形成されている、請求項8,10および11のいずれか一項に記載の半導体装置。
- 前記ポストは、前記電極パッドが形成された領域を回避するように形成されている、請求項8,10,11および13のいずれか一項に記載の半導体装置。
- 前記ポストは、Cuを含む金属材料からなる、請求項8,10,11,13および14のいずれか一項記載の半導体装置。
- 前記ポストは、Niめっき、またはNi/Pd(ニッケル/パラジウム)めっきにより選択的に覆われている、請求項15に記載の半導体装置。
- 前記再配線を覆うように形成され、前記再配線の一部を配線パッドとして選択的に露出させる配線パッド開口が形成された表面保護膜を含み、前記ポストは、前記配線パッド開口を介して前記再配線に接続されている、請求項8,10,11および13〜16のいずれか一項に記載の半導体装置。
- 前記再配線を覆うように形成された表面保護膜を含み、
前記ポストは、前記表面保護膜を貫通して前記再配線に電気的に接続されるように形成されている、請求項8,10,11および13〜16のいずれか一項に記載の半導体装置。 - 前記再配線は、CuまたはAlを含む金属材料からなる、請求項1〜18のいずれか一項に記載の半導体装置。
- 前記再配線は、Niめっき、またはNi/Pd(ニッケル/パラジウム)めっきに選択的に覆われている、請求項19に記載の半導体装置。
- 前記再配線は、アンダーバンプメタル層を介して前記電極パッドと接続されている、請求項1〜20のいずれか一項に記載の半導体装置。
- 前記電極パッドは、Alを含む金属材料からなる、請求項1〜21のいずれか一項に記載の半導体装置。
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US9831212B2 (en) | 2017-11-28 |
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