WO2022255053A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2022255053A1
WO2022255053A1 PCT/JP2022/019961 JP2022019961W WO2022255053A1 WO 2022255053 A1 WO2022255053 A1 WO 2022255053A1 JP 2022019961 W JP2022019961 W JP 2022019961W WO 2022255053 A1 WO2022255053 A1 WO 2022255053A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor element
clip
semiconductor device
lead frame
region
Prior art date
Application number
PCT/JP2022/019961
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English (en)
French (fr)
Inventor
太朗 井越
Original Assignee
株式会社デンソー
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Publication date
Application filed by 株式会社デンソー filed Critical 株式会社デンソー
Publication of WO2022255053A1 publication Critical patent/WO2022255053A1/ja
Priority to US18/497,089 priority Critical patent/US20240063150A1/en

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Definitions

  • the present disclosure relates to a semiconductor device in which a clip is joined to a semiconductor element.
  • a semiconductor device described in Patent Document 1 includes a die pad, a plurality of leads, a semiconductor element, a clip, a bonding material, and a sealing resin.
  • This semiconductor device has a structure in which a clip is joined to an electrode of a semiconductor element and some leads through a joining material, and the semiconductor element and some leads are electrically connected.
  • the area of the junction between the semiconductor element and the clip is made as large as possible to reduce the thermal resistance at these junctions, thereby improving the heat dissipation of the semiconductor element.
  • the present disclosure relates to a semiconductor device in which a clip is bonded to a semiconductor element, local heat generation in the vicinity of the bonding portion between the semiconductor element and the clip is suppressed, and reliability is improved.
  • a semiconductor device comprises a lead frame, a semiconductor element mounted on the lead frame, and an electrode on the surface of the semiconductor element opposite to the lead frame.
  • a clip that is bonded via a bonding material, a sealing material that covers the semiconductor element and the clip, and a region between the semiconductor element and the clip that is bonded via the bonding material as a bonding region and a thermal resistance portion disposed in the junction region, the thermal resistance portion having a higher thermal resistance than a region of the junction region different from the thermal resistance portion.
  • a thermal resistance portion is arranged in a bonding region bonded via a bonding material between a semiconductor element and a clip, and the thermal resistance portion has a higher thermal resistance than other portions in the bonding region. It has a large configuration. As a result, the portion of the bonding region where the thermal resistance portion is arranged has less heat dissipation than the other portions, so that the amount of heat generated is relatively large. As a result, regions with low heat dissipation are dispersed, and local heat concentration between the clip with high heat dissipation and the region with low heat dissipation in the vicinity of the clip in the semiconductor device is suppressed. Therefore, this semiconductor device is intentionally provided with a region with low heat dissipation, thereby suppressing excessive heat concentration in the vicinity of the connection portion between the semiconductor element and the clip, and current concentration and breakage resulting therefrom. , reliability is improved.
  • a semiconductor device comprises a lead frame, a semiconductor element mounted on the lead frame, and electrodes on a surface of the semiconductor element opposite to the lead frame. and a sealing material covering the semiconductor element and the clip, wherein the clips are arranged with a gap from each other and are bonded to the semiconductor element via the bonding material. At least two joints among the plurality of joints are arranged parallel to each other in the same extending direction, and are connected to a region of the electrode including the vicinity of the outer shell.
  • This semiconductor device has a configuration in which a semiconductor element and a clip are bonded together, and the clip has a plurality of bonding portions where the clip is bonded to the semiconductor element via a bonding material, and the plurality of bonding portions are arranged apart from each other. It's becoming As a result, the clip having a high heat dissipation is not connected to the portion of the electrode of the semiconductor element located between the plurality of joint portions of the clip, so that the heat dissipation property is lower than that of the joint portion.
  • this semiconductor device is intentionally provided with a region with low heat dissipation, thereby suppressing local heat concentration in the vicinity of the connection portion between the semiconductor element and the clip, and current concentration and breakage resulting therefrom. , reliability is improved.
  • this semiconductor device has a structure in which the area of the portion of the electrode of the semiconductor element with low heat dissipation on the outer side of the junction is reduced, and the region with low heat dissipation does not occur more than necessary.
  • a semiconductor device comprises a lead frame, a semiconductor element mounted on the lead frame, and a surface of the semiconductor element that is bonded to the surface opposite to the lead frame.
  • a plurality of clips connected via a material and a sealing material covering the semiconductor element and the clips are provided, and the plurality of clips are arranged with a gap therebetween.
  • This semiconductor device has a configuration in which a plurality of different clips are bonded to one semiconductor element via a bonding material, and the plurality of clips are arranged apart from each other. As a result, the portion of the surface of the semiconductor element located between the plurality of clips becomes a region with lower heat dissipation than other portions. As with the other semiconductor devices described above, this disperses areas with low heat dissipation, suppresses local heat concentration in the vicinity of the clip, and the resulting current concentration and damage, thereby improving reliability. An improved effect is obtained.
  • FIG. 1 is a top layout diagram showing the semiconductor device of the first embodiment
  • FIG. FIG. 2 is a cross-sectional view showing a cross section between II-II in FIG. 1
  • FIG. 2 is a cross-sectional view showing a cross section between III-III in FIG. 1
  • FIG. 3 is a cross-sectional view showing a semiconductor device of a comparative example, which corresponds to FIG. 2
  • It is an explanatory view for explaining local heat concentration in a semiconductor device of a comparative example.
  • FIG. 10 is a diagram showing a first arrangement example of an insulating layer as a thermal resistance section between a semiconductor element and a clip
  • FIG. 10 is a diagram showing a second arrangement example of insulating layers as a thermal resistance section
  • FIG. 10 is a diagram showing a third arrangement example of insulating layers as a thermal resistance section
  • FIG. 11 is a diagram showing a fourth arrangement example of insulating layers as a thermal resistance section
  • FIG. 11 is a diagram showing a fifth arrangement example of insulating layers as a thermal resistance section
  • FIG. 11 is a diagram showing a sixth arrangement example of insulating layers as a thermal resistance section
  • It is a figure which shows the example which arrange
  • FIG. 3 is a cross-sectional view showing a semiconductor device according to a second embodiment, which corresponds to FIG. 2
  • FIG. 11 is a top layout diagram showing a semiconductor device according to a third embodiment
  • FIG. 11 is a top layout diagram showing a modification of the semiconductor device of the third embodiment
  • FIG. 11 is a top layout diagram showing a semiconductor device according to a fourth embodiment;
  • a semiconductor device 1 according to the first embodiment will be described.
  • the semiconductor device 1 of the present embodiment is preferably applied to vehicle-mounted applications such as automobiles, but of course, it can also be applied to other applications.
  • FIG. 1 in order to make it easier to understand each member and the arrangement relationship that constitute the semiconductor device 1, a part of the outline of each member covered with a sealing material 9 described later is indicated by a solid line, and members other than the sealing material 9 are indicated by solid lines.
  • the outline of the part covered with is indicated by a dashed line.
  • the semiconductor device 1 of this embodiment includes, for example, as shown in FIG. and a sealing material 9 . 2 and 3, the semiconductor device 1 includes a bonding material 4 used for connecting the semiconductor element 3 and the clip 8, and an insulating layer 7 disposed between the semiconductor element 3 and the clip 8. , further comprising:
  • the lead frame 2 has, for example, a die pad 21, a plurality of first leads 22 extending from the die pad 21, a second lead 23 independent from the die pad 21, and a third lead 24.
  • the lead frame 2 is made of, for example, an arbitrary metal material such as Cu (copper) or Fe (iron), an alloy material thereof, or the like.
  • the die pad 21 and the plurality of leads 23 and 24 are connected by tie bars (not shown) until the semiconductor device 1 is manufactured. and these are separated.
  • a semiconductor element 3 and a control IC 6 for driving control thereof are mounted via a bonding material 4.
  • the surface of the die pad 21 opposite to the mounting surface on which the semiconductor element 3 is mounted is exposed from the sealing material 9, for example.
  • the plurality of first leads 22 are, for example, arranged in parallel with each other at a distance, and extend outward from the die pad 21 .
  • the end surfaces of the plurality of first leads 22 on the side opposite to the die pad 21 side are exposed from the sealing material 9 . This is the same for the second lead 23 and the third lead 24 as well.
  • the second lead 23 is independent from the die pad 21 and the third lead 24 and, for example, arranged apart from each other in parallel. Some of the second leads 23 among the plurality of second leads 23 are electrically connected to the control IC 6 via, for example, wires 5 and used to drive the control IC 6 .
  • the third lead 24 has a larger planar size than the second lead 23 and is joined to the clip 8 via the joining material 4 .
  • the third lead 24 is electrically connected to the second electrode 32 of the semiconductor element 3 via the clip 8 and serves as a current path when the semiconductor element 3 is driven.
  • the configuration of the lead frame 2 described above is merely an example, and the number, size, arrangement, etc., of the die pad 21 and the leads 22 to 24 may vary depending on the number, size, etc., of the semiconductor elements 3 and control ICs 6 to be mounted. may be changed as appropriate.
  • the lead frame 2 may be partially or wholly plated with Au (gold), Sn (tin), or the like, not shown, for example.
  • the semiconductor element 3 is, for example, a vertical power element such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor).
  • the semiconductor element 3 is, for example, mainly made of a semiconductor material such as Si (silicon) or SiC (silicon carbide) in a rectangular plate shape, and is manufactured by a known semiconductor process.
  • the semiconductor element 3 has, for example, a surface 3a opposite to the lead frame 2 and a back surface 3b facing the lead frame 2. Electrodes are formed on the front surface 3a and the back surface 3b.
  • the semiconductor element 3 has, for example, a first electrode 31 formed on the rear surface 3b, and a second electrode 32 paired with the first electrode 31 and a plurality of third electrodes 33 formed on the front surface 3a.
  • the semiconductor element 3 has, for example, a structure in which the first electrode 31 functions as a drain electrode, the second electrode 32 functions as a source electrode, and the third electrode 33 functions as a gate electrode.
  • the semiconductor element 3 has a first electrode 31 bonded to the die pad 21 via the bonding material 4 and a second electrode 32 bonded to the clip 8 via the bonding material 4 .
  • the third electrode 33 of the semiconductor element 3 is electrically connected to the control IC 6 via the wire 5 , and the current between the first electrode 31 and the second electrode 32 is on/off controlled by the control IC 6 .
  • the bonding material 4 is, for example, a conductive bonding material such as solder, and is composed of any bonding material.
  • the wire 5 is made of a metal material such as Au (gold) or Al (aluminum), and is connected to the lead frame 2, the semiconductor element 3 and the control IC 6 by wire bonding.
  • the control IC 6 is a control element having a control circuit used for current control of the semiconductor element 3, and is, for example, an arbitrary power supply control element corresponding to a power element such as a MOSFET.
  • the control IC 6 has, for example, a plurality of electrode pads 61 on one surface, and is connected to the third electrodes 33 of the semiconductor element 3 and the plurality of leads 23 via the wires 5, and is connected to the semiconductor element 3, an external power source, and the like. Electrical communication is possible.
  • the control IC 6 is, for example, mounted on the die pad 21 with the bonding material 4 interposed therebetween, similarly to the semiconductor element 3 .
  • the insulating layer 7 is disposed between the second electrode 32 of the semiconductor element 3 and the clip 8, for example, as shown in FIG. It is a member that functions as a heat resistance portion that is intentionally increased.
  • the insulating layer 7 is made of any insulating material such as PIQ (Polyimide-isoindoloquinazolinedione) or a resist material, and is formed by coating using a dispenser or the like.
  • PIQ Polyimide-isoindoloquinazolinedione
  • the insulating layer 7 intentionally forms a region with low heat dissipation between the second electrode 32 and the clip 8, and by dispersing the region with low heat dissipation, local heat concentration can be prevented in the region near the clip 8. play a role in preventing Details of this will be described later.
  • the clip 8 is a wiring member that is made of, for example, a highly conductive and thermally conductive metal material such as Cu or an alloy material thereof, and that electrically connects the semiconductor element 3 and the third lead 24 .
  • One end of the clip 8 is joined to the second electrode 32 of the semiconductor element 3 and the other end is joined to the third lead 24 by the joining material 4 .
  • the clip 8 is configured such that the thickness of the portion bonded to the semiconductor element 3 is greater than the thickness of the other portions.
  • the clip 8 is obtained by, for example, preparing a plate material made of Cu or the like, forming a partially thin portion by cutting or half-etching, and then bending the plate material.
  • the clip 8 is not limited to the structure described above, and may have a structure having a uniform thickness. In this case, the clip 8 is obtained by bending a plate material made of Cu or the like.
  • the encapsulant 9 is a member that is made of an arbitrary insulating and hardening resin material such as epoxy resin, and that covers a part of the lead frame 2 and other constituent members of the semiconductor device 1 .
  • the encapsulant 9 is molded by any resin molding method such as compression molding using a mold (not shown).
  • the above is the basic configuration of the semiconductor device 1 of this embodiment.
  • the semiconductor device 100 of the comparative example has a basic configuration similar to that of the semiconductor device 1, but does not have the insulating layer 7 and does not have the insulating layer 7 between the semiconductor element 3 and the clip 8, as shown in FIG. , the insulating layer 7 is not arranged.
  • the clip 8 is joined to the second electrode 32 of the semiconductor element 3 , and the joining area between them is approximately the same as the plane area of the second electrode 32 .
  • the resistance at the joint portion between the second electrode 32 of the semiconductor element 3 and the clip 8 is reduced, and the amount of heat generated due to the connection resistance at the joint portion is reduced.
  • the semiconductor device 100 of the comparative example includes, for example, as shown in FIG. It has a neighboring portion 3ab which is a non-bonded portion.
  • a portion 3aa immediately below where the clip 8 made of Cu or the like having high thermal conductivity is arranged serves as a high heat dissipation region RH .
  • the vicinity portion 3ab where the sealing material 9 having a lower thermal conductivity than the clip 8 is arranged serves as a low heat radiation region RL .
  • the insulating layer 7 is arranged as a thermal resistance portion in the junction region Rj .
  • the insulating layer 7 can be composed of, for example, a plurality of island portions 71 arranged in an island shape with a distance therebetween.
  • Each of the plurality of island portions 71 has, for example, a substantially rectangular shape when viewed from above, and is arranged inside the outer contour of the joint region Rj , so that the heat resistance in the inner region of the clip 8 is greater than the outer contour. play a role in That is, the portion of the joint surface 8a of the clip 8 located above the island portion 71 has a lower heat dissipation than the other portions of the joint surface 8a.
  • the heat generation areas on the joint surface 8a of the clip 8 are dispersed by the number of the island parts 71, the heat concentration in the vicinity of the clip 8 is alleviated, and the resulting current concentration and breakage are suppressed.
  • the insulating layer 7 is not limited to the example shown in FIG. 6A, and for example, as shown in FIG. may be aligned and arranged in parallel in the vertical direction of the paper surface. As shown in FIGS. 6C and 6D, the insulating layer 7 may have a configuration in which a plurality of island portions 71 are arranged in parallel with their longitudinal directions aligned in the lateral direction of the paper surface. For example, as shown in FIG. 6E, the insulating layer 7 has a substantially rectangular shape when viewed from the top, and is positioned at a distance from the outline of the bonding region Rj , that is, in a predetermined region including the center of the bonding region Rj . Only one may be arranged. Also, the insulating layer 7 may be substantially circular in top view, as shown in FIG. 6F, for example.
  • the insulating layer 7 is arranged at a position away from the vicinity of the outer contour of the joint region Rj , and it is sufficient that the heat generating region in the clip 8 can be dispersed. may be changed as appropriate. From the viewpoint of dispersing heat generation areas in the clip 8 , it is preferable that the insulating layer 7 has a configuration having a plurality of island portions 71 .
  • the insulating layer 7 may be arranged between the second electrode 32 and the joint surface 8a of the clip 8. For example, as shown in FIG. good.
  • the insulating layer 7 is pattern-formed in advance on the bonding surface 8 a of the clip 8 , for example, before bonding the clip 8 to the semiconductor element 3 .
  • the insulating layer 7 may have a plurality of island portions 71 arranged on the bonding surface 8a, or may have a configuration in which only one island portion 71 is arranged on the bonding surface 8a, and is formed on the semiconductor element 3 side. As in the case, the arrangement, configuration, and the like may be changed as appropriate.
  • the insulating layer 7 is arranged between the semiconductor element 3 and the clip 8, so that the joint surface 8a of the clip 8 intentionally has a thermal resistance portion with low heat dissipation. It becomes the device 1.
  • the heat generated in the junction region Rj between the semiconductor element 3 and the clip 8 is dispersed, and heat concentration, current concentration, and damage caused by the heat concentration in the vicinity portion 3ab of the semiconductor element 3 located in the vicinity of the outer periphery of the clip 8 are prevented. is suppressed, and the effect of improving reliability is obtained.
  • the semiconductor device 1 of the present embodiment differs from the first embodiment in that it does not have the insulating layer 7 and the bonding surface 8a of the clip 8 has an uneven shape, as shown in FIG. In this embodiment, this difference will be mainly described.
  • the clip 8 has, for example, a plurality of recesses 81 recessed toward the side opposite to the semiconductor element 3 on the bonding surface 8a.
  • the bonding surface 8 a of the clip 8 is bonded to the second electrode 32 of the semiconductor element 3 via the bonding material 4 , and the recess 81 is filled with the bonding material 4 .
  • the clip 8 functions as a thermal resistance portion having a larger thermal resistance than the other portions because the recessed portion 81 is positioned further away from the semiconductor element 3 than the other portions of the joint surface 8a.
  • the clip 8 is in substantially the same state as when the insulating layer 7 is arranged, because the concave portion 81 has less heat dissipation than the other portions of the joint surface 8a and generates more heat. Therefore, the semiconductor device 1 of the present embodiment has a configuration in which the heat generating region is dispersed on the bonding surface 8a of the clip 8, and local heat concentration in the vicinity portion 3ab of the semiconductor element 3 is suppressed.
  • concave portion 81 Only one concave portion 81 may be provided on the joint surface 8a, or a plurality of concave portions 81 may be provided and arranged apart from each other. Further, the concave portion 81 is, for example, a rectangular groove and has a depth of about 10 ⁇ m, but is not limited to this, and the depth, shape, dimensions, and the like may be changed as appropriate.
  • the semiconductor device 1 can obtain the same effects as those of the first embodiment.
  • the semiconductor device 1 does not require the insulating layer 7, there is no influence of aged deterioration of the insulating layer 7, and an effect of further improving reliability can be obtained.
  • the semiconductor device 1 of the present embodiment has a structure having a plurality of bonding portions 82 where the clip 8 is bonded to the semiconductor element 3 and does not have the insulating layer 7, as shown in FIG. Differs from one embodiment. In this embodiment, this difference will be mainly described.
  • the clip 8 has two joints 82 arranged parallel to each other with a gap therebetween.
  • the clip 8 is obtained, for example, by providing a plate material made of Cu or the like with portions having different thicknesses by processing such as cutting or half-etching, and then performing press punching to remove unnecessary portions.
  • the two joints 82 are, for example, rectangular when viewed from above, and are arranged in parallel with their extension directions (that is, longitudinal directions) aligned.
  • the two bonding portions 82 are arranged, for example, along two opposing sides of a plurality of sides forming the outline of the second electrode 32 of the semiconductor element 3, and are bonded to a predetermined region including the vicinity of the two sides. It is As a result, the area of the second electrode 32 between the joint portion 82 and one side of the outer shell adjacent thereto is reduced, thereby suppressing the spread resistance in the region, and the clip 8 of the second electrode 32 is reduced. The amount of heat generated in the outer shell portion located in the vicinity of is reduced.
  • the portion sandwiched between the two joint portions 82 of the clip 8 is in a state where the second electrode 32 of the semiconductor element 3 is exposed, and the sealing material 9 having a lower thermal conductivity than the clip 8 is arranged. Therefore, the area between the two joints 82 of the second electrode 32 has less heat dissipation than the area where the joints 82 are joined, and as a result of the heat-generating areas in the semiconductor element 3 dispersing, the neighboring part 3ab play a role in suppressing the local heat concentration of
  • the semiconductor device 1 can obtain the same effects as those of the first embodiment. Moreover, since the insulating layer 7 is not provided, the semiconductor device 1 of the present embodiment can obtain the same effects as those of the second embodiment.
  • the semiconductor device 1 of the third embodiment may have a configuration in which the clip 8 has three joint portions 82 arranged apart from each other.
  • the gaps between the joints 82 are designed to have heat dissipation properties that are intentionally smaller than those of the joints 82 . It functions as a resistor. Therefore, the semiconductor device 1 uses a clip 8 having a plurality of joints 82 arranged apart from each other, thereby suppressing local heat concentration at the boundary between the second electrode 32 of the semiconductor element 3 and the clip 8. and improve reliability.
  • the clip 8 is not limited to the example in which the two or three joints 82 are spaced apart from each other and arranged in parallel as described above, and may have four or more joints 82. . At least two joint portions 82 of the plurality of joint portions 82 of the clip 8 are arranged along two opposing sides among the sides forming the outline of the second electrode 32 of the semiconductor element 3, and the vicinity of the two sides is arranged. It is preferably joined to the containing region.
  • the term “nearby” as used herein means, for example, but not limited to, a portion positioned within 1 mm from the side forming the outline of the second electrode 32 .
  • the number, arrangement, dimensions, etc. of the joint portions 82 of the clip 8 may be appropriately changed according to the electrodes of the semiconductor element 3 to be joined.
  • the semiconductor device 1 can obtain the same effects as those of the third embodiment.
  • the semiconductor element 3 has two second electrodes 32 on the surface 3a, and different clips 8 are joined to the two second electrodes 32. , and that the insulating layer 7 is not provided. In this embodiment, this difference will be mainly described.
  • the semiconductor element 3 has two second electrodes 32 spaced apart from each other on the surface 3a in this embodiment.
  • two second electrodes 32 are paired with a first electrode 31 on the back surface 3b, and voltage application to the third electrode 33 causes current to flow in the thickness direction, that is, in the vertical direction. .
  • the number of clips 8 is the same as the number of the second electrodes 32 of the semiconductor element 3, and they are joined to the different second electrodes 32 via the joining material 4.
  • the two clips 8 are joined to one semiconductor element 3 , are independent of each other, and are arranged so as not to contact the other clip 8 .
  • the region between the two second electrodes 32 of the semiconductor element 3 has less heat dissipation than the region joined to the clip 8, and the heat generating portions are dispersed, so that the clip Local heat concentration in the portion located in the vicinity of 8 is suppressed.
  • the semiconductor device 1 can obtain the same effects as those of the first embodiment. Moreover, since the insulating layer 7 is not provided, the semiconductor device 1 of the present embodiment can obtain the same effects as those of the second embodiment.
  • the configuration in which one semiconductor element 3 and one control IC 6 are mounted on one die pad 21 has been described as a representative example, but the configuration of the semiconductor device 1 is not limited to this. do not have.
  • the semiconductor device 1 may have a plurality of independent die pads 21 and the semiconductor element 3 and the control IC 6 may be mounted on different die pads 21 .
  • the semiconductor device 1 may have a configuration in which the control IC 6 is not included in the sealing material 9 and the semiconductor element 3 is connected to the control IC 6 arranged outside.
  • the semiconductor device 1 may have, for example, a configuration in which two semiconductor elements 3 are arranged in the sealing material 9, that is, a so-called 2-in-1 configuration, or three or more semiconductor elements 3 may be arranged in the sealing material 9. It may be a configuration that is In this case, the configuration of the lead frame 2, the number of clips 8, and the like are appropriately changed according to the number of semiconductor elements 3, and the like.

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Abstract

半導体装置であって、リードフレーム（２）と、リードフレームの上に搭載される半導体素子（３）と、半導体素子のうちリードフレームとは反対側の表面（３ａ）の電極（３２）に接合材（４）を介して接合されるクリップ（８）と、半導体素子およびクリップを覆う封止材（９）と、半導体素子とクリップとの間の領域であって、接合材を介して接合されている部分を接合領域（Ｒｊ）として、接合領域に配置される熱抵抗部（７、８１）と、を備える。熱抵抗部は、接合領域のうち熱抵抗部とは異なる領域よりも熱抵抗が大きい。

Description

半導体装置 関連出願への相互参照
　本出願は、２０２１年６月４日に出願された日本特許出願番号２０２１－９４４１５号に基づくもので、ここにその記載内容が参照により組み入れられる。
　本開示は、半導体素子にクリップが接合されてなる半導体装置に関する。
　従来、半導体素子の電極に板状部材のクリップが接合され、半導体素子およびクリップが封止材により覆われてなる半導体装置として、例えば特許文献１に記載のものが知られている。特許文献１に記載の半導体装置は、ダイパッドと、複数のリードと、半導体素子と、クリップと、接合材と、封止樹脂とを備える。この半導体装置は、接合材を介して、半導体素子の電極および一部のリードにクリップが接合されており、半導体素子と一部のリードとが電気的に接続された構造となっている。
特開２０１３－５１２９５号公報
　この種の半導体装置では、半導体素子とクリップとの接合部分の面積をできる限り広くし、これらの接合部分における熱抵抗を小さくすることで、半導体素子の放熱性を高めた構造とされている。
　しかしながら、本発明者らがこのような構造の半導体装置における信頼性向上について鋭意検討を行った結果、半導体素子のうちクリップが接合された部分の近傍において局所的な発熱に起因して電流が集中し、破損が生じうることが判明した。
　本開示は、半導体素子にクリップが接合されてなり、半導体素子とクリップとの接合部分の近傍における局所的な発熱を抑制し、信頼性を向上した半導体装置に関する。
　本開示の１つの観点によれば、半導体装置は、半導体装置であって、リードフレームと、リードフレームの上に搭載される半導体素子と、半導体素子のうちリードフレームとは反対側の表面の電極に接合材を介して接合されるクリップと、半導体素子およびクリップを覆う封止材と、半導体素子とクリップとの間の領域であって、接合材を介して接合されている部分を接合領域として、接合領域に配置される熱抵抗部と、を備え、熱抵抗部は、接合領域のうち熱抵抗部とは異なる領域よりも熱抵抗が大きい。
　この半導体装置は、半導体素子とクリップとの間であって、接合材を介して接合された接合領域内に熱抵抗部が配置され、熱抵抗部が接合領域における他の部分よりも熱抵抗が大きい構成となっている。これにより、接合領域のうち熱抵抗部が配置された部分は、放熱性が他の部分よりも小さくなることで、発熱量が相対的に大きくなる。この結果、放熱性が低い領域が分散されることとなり、半導体装置のうち放熱性が大きいクリップと、クリップ近傍の放熱性が小さい領域との間における局所的な熱集中が抑制される。そのため、この半導体装置は、意図的に放熱性が小さい領域が設けられることで、半導体素子とクリップとの接続部分の近傍における居所的な熱集中、およびこれに起因する電流集中や破損が抑制され、信頼性が向上する。
　本開示の別の観点によれば、半導体装置は、半導体装置であって、リードフレームと、リードフレームの上に搭載される半導体素子と、半導体素子のうちリードフレームとは反対側の表面の電極に接合材を介して接続されるクリップと、半導体素子およびクリップを覆う封止材と、を備え、クリップは、互いに隙間を隔てて配置され、接合材を介して半導体素子に接合される複数の接合部を有し、複数の接合部のうち少なくとも２つの接合部は、延設された方向を揃えて平行配置され、それぞれ電極のうち外郭近傍を含む領域に接続されている。
　この半導体装置は、半導体素子とクリップとが接合されてなり、クリップが接合材を介して半導体素子と接合される複数の接合部を有し、複数の接合部が互いに離れて配置された構成となっている。これにより、半導体素子の電極のうちクリップの複数の接合部の間に位置する部分は、放熱性が大きいクリップが接続されないため、接合部よりも放熱性が低下する。この結果、放熱性が小さい領域が分散されることとなり、半導体装置のうち放熱性が大きいクリップと、クリップ近傍の放熱性が小さい領域との間における局所的な熱集中が抑制される。そのため、この半導体装置は、意図的に放熱性が小さい領域が設けられることで、半導体素子とクリップとの接続部分の近傍における局所的な熱集中、およびこれに起因する電流集中や破損が抑制され、信頼性が向上する。
　また、この半導体装置は、複数の接合部のうち少なくとも２つの接合部が、延設方向を揃えて平行配置され、半導体素子の電極の外郭近傍に接合されることで、当該電極のうち接合部よりも外郭側に位置する部分の面積が小さくなっている。そのため、この半導体装置は、半導体素子の電極のうち接合部よりも外郭側における放熱性が小さい部分の面積が少なくなり、放熱性が小さい領域が必要以上に生じない構造である。
　本開示の他の観点によれば、半導体装置は、半導体装置であって、リードフレームと、リードフレームの上に搭載される半導体素子と、半導体素子のうちリードフレームとは反対側の表面に接合材を介して接続される複数のクリップと、半導体素子およびクリップを覆う封止材と、を備え、複数のクリップは、互いに隙間を隔てて配置されている。
　この半導体装置は、１つの半導体素子に、接合材を介して複数の異なるクリップが接合されてなり、複数のクリップが互いに離れて配置された構成となっている。これにより、半導体素子の表面のうち複数のクリップの間に位置する部分は、他の部分に比べて、放熱性が小さい領域となる。これにより、上記した他の半導体装置と同様に、放熱性が小さい領域が分散し、クリップの近傍においける局所的な熱集中、およびこれに起因する電流集中や破損が抑制され、信頼性が向上する効果が得られる。
　なお、各構成要素等に付された括弧付きの参照符号は、その構成要素等と後述する実施形態に記載の具体的な構成要素等との対応関係の一例を示すものである。
第１実施形態の半導体装置を示す上面レイアウト図である。 図１のＩＩ－ＩＩ間の断面を示す断面図である。 図１のＩＩＩ－ＩＩＩ間の断面を示す断面図である。 比較例の半導体装置を示す断面図であって、図２に相当する図である。 比較例の半導体装置における局所的な熱集中を説明するための説明図である。 半導体素子とクリップとの間における熱抵抗部としての絶縁層の第１の配置例を示す図である。 熱抵抗部としての絶縁層の第２の配置例を示す図である。 熱抵抗部としての絶縁層の第３の配置例を示す図である。 熱抵抗部としての絶縁層の第４の配置例を示す図である。 熱抵抗部としての絶縁層の第５の配置例を示す図である。 熱抵抗部としての絶縁層の第６の配置例を示す図である。 クリップ側に絶縁層を配置した例を示す図である。 第２実施形態の半導体装置を示す断面図であって、図２に相当する図である。 第３実施形態の半導体装置を示す上面レイアウト図である。 第３実施形態の半導体装置の変形例を示す上面レイアウト図である。 第４実施形態の半導体装置を示す上面レイアウト図である。
　以下、本開示の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、同一符号を付して説明を行う。
　（第１実施形態）
　第１実施形態の半導体装置１について説明する。本実施形態の半導体装置１は、例えば、自動車等の車両に搭載される車載用途に適用されると好適であるが、勿論、他の用途にも採用されうる。
　図１では、半導体装置１を構成する各部材および配置関係を分かり易くするため、後述する封止材９で覆われる各部材の外郭の一部を実線で示すと共に、封止材９以外の部材で覆われた部分の外郭を破線で示している。
　〔基本構成〕
　本実施形態の半導体装置１は、例えば図１に示すように、ダイパッド２１および複数のリード２２、２３を有するリードフレーム２と、半導体素子３と、ワイヤ５と、制御ＩＣ６と、クリップ８と、封止材９とを有してなる。半導体装置１は、例えば図２および図３に示すように、半導体素子３とクリップ８との接続に用いられる接合材４と、半導体素子３とクリップ８との間に配置された絶縁層７と、をさらに有してなる。
　リードフレーム２は、例えば、ダイパッド２１、ダイパッド２１から外部に延設された複数の第１リード２２、ダイパッド２１から独立した第２リード２３、および第３リード２４を有してなる。リードフレーム２は、例えば、Ｃｕ（銅）やＦｅ（鉄）等の任意の金属材料やその合金材料等により構成される。リードフレーム２は、例えば、半導体装置１製造途中まではダイパッド２１および複数のリード２３、２４が図示しないタイバーにより連結されており、封止材９の成形後の打ち抜き加工によりタイバーが除去されることで、これらが分離した状態とされる。
　ダイパッド２１は、例えば図２に示すように、半導体素子３およびその駆動制御用の制御ＩＣ６が接合材４を介して搭載されている。ダイパッド２１は、例えば、半導体素子３が搭載される搭載面とは反対側の面が封止材９から露出している。これは、ダイパッド２１から外部に延設された複数の第１リード２２、ダイパッド２１から独立した第２リード２３、第３リード２４についても同様である。
　複数の第１リード２２は、例えば、互いに距離を隔てて平行配置され、ダイパッド２１から外部に向かって延設されている。複数の第１リード２２は、ダイパッド２１側とは反対側の端面が封止材９から露出した状態となっている。これは、第２リード２３、第３リード２４についても同様である。
　第２リード２３は、ダイパッド２１および第３リード２４から独立すると共に、例えば、互いに離れて平行配置されている。複数の第２リード２３のうち一部の第２リード２３は、例えば、ワイヤ５を介して、制御ＩＣ６に電気的に接続されており、制御ＩＣ６の駆動に用いられる。
　第３リード２４は、第２リード２３よりも平面サイズが大きく、接合材４を介してクリップ８が接合される。第３リード２４は、クリップ８を介して、半導体素子３の第２電極３２に電気的に接続されており、半導体素子３の駆動時の電流経路となっている。
　なお、上記したリードフレーム２の構成は、あくまで一例であり、搭載される半導体素子３、制御ＩＣ６の数や大きさなどに応じて、ダイパッド２１やリード２２～２４の数、大きさや配置等については適宜変更されてもよい。また、リードフレーム２は、例えば、一部または全部の領域に、Ａｕ（金）やＳｎ（錫）などによりなる図示しない外装めっきが施されていてもよい。
　半導体素子３は、例えば、ＭＯＳＦＥＴ（Metal Oxide Semiconductor Field Effect Transistor ）やＩＧＢＴ（Insulated Gate Bipolar Transistor）などの縦型のパワー素子とされる。半導体素子３は、例えば、主に、Ｓｉ（シリコン）やＳｉＣ（炭化珪素）などの半導体材料により矩形板状に構成され、公知の半導体プロセスにより製造される。半導体素子３は、例えば、リードフレーム２とは反対側の面を表面３ａとし、リードフレーム２と向き合う面を裏面３ｂとして、表面３ａおよび裏面３ｂそれぞれに電極が形成されている。半導体素子３は、例えば、裏面３ｂに第１電極３１が形成され、表面３ａに第１電極３１と対をなす第２電極３２、および複数の第３電極３３が形成されている。半導体素子３は、例えば、第１電極３１がドレイン電極、第２電極３２がソース電極、第３電極３３がゲート電極として機能する構成となっている。半導体素子３は、第１電極３１が接合材４を介してダイパッド２１に接合されると共に、第２電極３２が接合材４を介してクリップ８に接合されている。半導体素子３は、第３電極３３がワイヤ５を介して制御ＩＣ６に電気的に接続されており、制御ＩＣ６により第１電極３１と第２電極３２との電流のオン／オフ制御がなされる。
　接合材４は、例えば、はんだ等の導電性のある接合材料であり、任意の接合材料で構成される。
　ワイヤ５は、例えば、Ａｕ（金）やＡｌ（アルミニウム）などの金属材料で構成されており、ワイヤボンディングによりリードフレーム２、半導体素子３や制御ＩＣ６に接続される。
　制御ＩＣ６は、半導体素子３の電流制御に用いられる制御回路を備える制御素子であり、例えば、ＭＯＳＦＥＴ等のパワー素子に対応した任意の電源制御用の素子とされる。制御ＩＣ６は、例えば、一面に複数の電極パッド６１を有し、ワイヤ５を介して半導体素子３の第３電極３３や複数のリード２３に接続されており、半導体素子３や外部電源等との電気的なやり取りが可能となっている。制御ＩＣ６は、例えば、半導体素子３と同様に、ダイパッド２１の上に接合材４を介して搭載されている。
　絶縁層７は、例えば図３に示すように、半導体素子３の第２電極３２とクリップ８との間に配置され、第２電極３２とクリップ８との間における一部の領域の熱抵抗を意図的に大きくする熱抵抗部として機能する部材である。絶縁層７は、任意の絶縁性材料、例えばＰＩＱ（Polyimide-isoindolo quinazolinedione）やレジスト材料などにより構成され、ディスペンサー等により塗布成膜される。絶縁層７は、第２電極３２とクリップ８との間に放熱性が小さい領域を意図的に形成し、放熱性が小さい領域を分散させることで、クリップ８の近傍領域において局所的な熱集中を防ぐ役割を果たす。この詳細については、後述する。
　クリップ８は、例えば、Ｃｕなどの導電性および熱伝導性が高い金属材料やその合金材料などにより構成され、半導体素子３と第３リード２４とを電気的に接続する配線部材である。クリップ８は、一端側が半導体素子３の第２電極３２に、他端側が第３リード２４に接合材４により接合される。クリップ８は、例えば、図２に示すように、半導体素子３に接合される部分の厚みが、他の部分の厚みよりも大きい構成とされる。クリップ８は、例えば、Ｃｕなどによりなる板材を用意し、切削やハーフエッチング等により部分的に厚みが薄い部位を形成した後に、曲げ加工を施すことにより得られる。なお、クリップ８は、上記した構成に限定されるものではなく、厚みが一様な構成であってもよく、この場合にはＣｕなどによりなる板材に曲げ加工を施すことにより得られる。
　封止材９は、例えば、エポキシ樹脂などの絶縁性および硬化性を有する任意の樹脂材料で構成され、リードフレーム２の一部および半導体装置１の他の構成部材を覆う部材である。封止材９は、例えば、図示しない金型を用い、コンプレッション成形等の任意の樹脂成形法により成形される。
　以上が、本実施形態の半導体装置１の基本的な構成である。
　〔絶縁層〕
　次に、絶縁層７の効果や構成等について、絶縁層７を有しない比較例の半導体装置１００と対比して説明する。
　比較例の半導体装置１００は、例えば図４に示すように、基本的な構成については半導体装置１と同様であるが、絶縁層７を有しておらず、半導体素子３とクリップ８との間に絶縁層７が配置されていない。比較例の半導体装置１は、半導体素子３の第２電極３２にクリップ８が接合されており、これらの接合面積が第２電極３２の平面積とほぼ同程度となっている。これにより、比較例の半導体装置１００は、半導体素子３の第２電極３２とクリップ８との接合部分における抵抗が小さくされ、当該接合部分における接続抵抗に起因する発熱量が低減されている。
　比較例の半導体装置１００は、例えば図５に示すように、半導体素子３の表面３ａのうちクリップ８が接合された領域の直下に位置する直下部位３ａａと、その近傍であって、クリップ８が接合されていない部位である近傍部位３ａｂとを有する。熱伝導率が高いＣｕなどによりなるクリップ８が配置された直下部位３ａａは、高放熱領域ＲＨとなっている。一方、クリップ８よりも熱伝導率が低い封止材９が配置された近傍部位３ａｂは、低放熱領域ＲＬとなっている。
　本発明者らが比較例の半導体装置１００における信頼性評価を実施したところ、クリップ８の近傍、すなわち近傍部位３ａｂあるいは直下部位３ａａと近傍部位３ａｂとの境界部分において過電流が生じ、絶縁破壊が生じることが判明した。これは、高放熱領域ＲＨと低放熱領域ＲＬとの放熱性の差が大きいことに起因して、これらの境界において局所的な熱集中が生じるためであると考えられる。具体的には、半導体素子３において局所的な熱集中が生じると、当該熱の集中箇所の温度が他の部位よりも上昇し、電気抵抗が低下する。この電気抵抗の低下に伴い、局所的な熱集中の箇所における電流量が増加し、発熱量がさらに増加し、ひいてはさらなる電気抵抗の低下が引き起こされる。このサイクルの繰り返しにより、半導体素子３において局所的な耐量低下が生じ、最終的に破損に至ったと考えられる。そのため、このような破損を抑制するためには、発熱領域を分散させる必要がある。
　これに対して、本実施形態の半導体装置１は、例えば図６Ａに示すように、半導体素子３とクリップ８との間であって、接合材４を介して接合された領域を接合領域Ｒｊとして、接合領域Ｒｊに熱抵抗部としての絶縁層７が配置されている。
　絶縁層７は、例えば、互いに距離を隔てて島状に配置された複数の島部７１により構成されうる。複数の島部７１は、例えば、上面視にて、いずれも略四角形状とされ、接合領域Ｒｊの外郭よりも内側に配置され、クリップ８のうちその外郭よりも内側領域における熱抵抗を大きくする役割を果たす。つまり、クリップ８の接合面８ａのうち島部７１の上に位置する部分は、接合面８ａの他の部分よりも放熱性が小さくなる。その結果、クリップ８の接合面８ａにおける発熱領域が島部７１の数だけ分散され、クリップ８の近傍における熱集中が緩和され、これに起因する電流集中や破損が抑制される。
　絶縁層７は、図６Ａの例に限定されるものではなく、例えば図６Ｂに示すように、上面視にて、略長方形状とされた４つの島部７１により構成され、長手方向を図６Ｂの紙面上下方向に揃えて平行配置されてもよい。絶縁層７は、図６Ｃや図６Ｄに示すように、複数の島部７１が、その長手方向を紙面左右方向に揃えて、平行配置された構成であってもよい。絶縁層７は、例えば図６Ｅに示すように、上面視にて、略矩形状とされ、接合領域Ｒｊの外郭から距離を隔てた位置、すなわち接合領域Ｒｊの中心を含む所定の領域に１つのみ配置されてもよい。また、絶縁層７は、例えば図６Ｆに示すように、上面視にて、略円形状とされてもよい。
　このように、絶縁層７は、接合領域Ｒｊの外郭近傍から離れた位置に配置され、クリップ８における発熱領域を分散できる構成であればよく、その外郭形状、島部７１の数や配置等については適宜変更されてもよい。なお、クリップ８における発熱領域の分散の観点からは、絶縁層７は、複数の島部７１を有する構成とされることが好ましい。
　また、絶縁層７は、第２電極３２とクリップ８の接合面８ａとの間に配置されていればよく、例えば図７に示すように、クリップ８の接合面８ａ側に形成されていてもよい。この場合、絶縁層７は、例えば、クリップ８を半導体素子３に接合する前に、クリップ８の接合面８ａに予めパターン成膜される。また、絶縁層７は、複数の島部７１が接合面８ａに配置されてもよいし、１つのみが接合面８ａに配置された構成であってもよく、半導体素子３側に形成される場合と同様に、配置や構成等が適宜変更されてもよい。
　本実施形態によれば、半導体素子３とクリップ８との間に絶縁層７が配置されることで、クリップ８の接合面８ａに意図的に放熱性が小さい熱抵抗部が存在する構成の半導体装置１となる。これにより、半導体素子３とクリップ８との接合領域Ｒｊにおける発熱が分散され、半導体素子３のうちクリップ８の外郭近傍に位置する近傍部位３ａｂでの熱集中やこれに起因する電流集中および破損が抑制され、信頼性が向上する効果が得られる。
　（第２実施形態）
　第２実施形態の半導体装置１について説明する。
　本実施形態の半導体装置１は、例えば図８に示すように、絶縁層７を有さず、クリップ８の接合面８ａが凹凸形状となっている点で上記第１実施形態と相違する。本実施形態では、この相違点について主に説明する。
　クリップ８は、本実施形態では、例えば、接合面８ａに半導体素子３とは反対側に向かって凹んだ凹部８１が複数設けられている。クリップ８は、接合面８ａが接合材４を介して半導体素子３の第２電極３２に接合されており、凹部８１に接合材４が充填されている。クリップ８は、凹部８１が接合面８ａの他の部分よりも半導体素子３から離れた状態とされ、熱抵抗が他の部分よりも大きい熱抵抗部として機能する。つまり、クリップ８は、凹部８１が接合面８ａの他の部分よりも放熱性が小さく、発熱量が大きいため、絶縁層７が配置された場合と実質的に同じ状態となる。そのため、本実施形態の半導体装置１は、クリップ８の接合面８ａでの発熱領域が分散し、半導体素子３の近傍部位３ａｂにおける局所的な熱集中が抑制される構成となる。
　なお、凹部８１は、接合面８ａに１つのみ設けられてもよいし、複数設けられ、互いに離れて配置されてもよい。また、凹部８１は、例えば、矩形溝状とされ、深さが１０μｍ程度とされるが、これに限定されるものではなく、その深さ、形状や寸法等については適宜変更されてもよい。
　本実施形態によっても、上記第１実施形態と同様の効果が得られる半導体装置１となる。また、この半導体装置１は、絶縁層７を要しないため、絶縁層７の経年劣化の影響がなく、信頼性がより向上する効果が得られる。
　（第３実施形態）
　第３実施形態の半導体装置１について説明する。
　本実施形態の半導体装置１は、例えば図９に示すように、クリップ８が半導体素子３に接合される接合部８２を複数有した構成である点、および絶縁層７を有しない点で上記第１実施形態と相違する。本実施形態では、この相違点について主に説明する。
　クリップ８は、本実施形態では、互いに隙間を隔てて平行配置された２つの接合部８２を有してなる。クリップ８は、例えば、Ｃｕなどによりなる板材に切削やハーフエッチングなどの加工により厚みが異なる部分を設けた後に、プレス打ち抜き加工を施して不要部分を除去することで得られる。
　２つの接合部８２は、例えば、上面視にて、長方形状とされ、その延設方向（すなわち長手方向）を揃えた状態で平行配置されている。２つの接合部８２は、例えば、半導体素子３の第２電極３２の外郭をなす複数の辺のうち対向する二辺に沿って配置されると共に、当該二辺の近傍を含む所定の領域に接合されている。これにより、第２電極３２のうち接合部８２とこれに隣接する外郭の一辺との間の領域の面積が小さくなることで、当該領域における広がり抵抗が抑制され、第２電極３２のうちクリップ８の近傍に位置する外郭部分の発熱量が低減される。
　また、クリップ８のうち２つの接合部８２に挟まれた部分は、半導体素子３の第２電極３２が露出した状態となり、クリップ８よりも熱伝導率が小さい封止材９が配置される。そのため、第２電極３２のうち２つの接合部８２の間の領域は、接合部８２が接合された領域よりも放熱性が小さくなり、半導体素子３における発熱領域が分散する結果、近傍部位３ａｂでの局所的な熱集中を抑制する役割を果たす。
　本実施形態によっても、上記第１実施形態と同様の効果が得られる半導体装置１となる。また、絶縁層７を有しないため、本実施形態の半導体装置１は、上記第２実施形態と同様の効果も得られる。
　（第３実施形態の変形例）
　第３実施形態の半導体装置１は、例えば図１０に示すように、クリップ８が互いに離れて配置された３つの接合部８２を有する構成であってもよい。このように、クリップ８は、互いに離れて配置された複数の接合部８２を有する構成である場合、接合部８２同士の隙間部分は、接合部８２に比べて意図的に放熱性を小さくした熱抵抗部として機能する。そのため、半導体装置１は、互いに離れて配置された複数の接合部８２を有するクリップ８を用いることにより、半導体素子３の第２電極３２とクリップ８との境界部分における局所的な熱集中が抑制され、信頼性が向上する。
　なお、クリップ８は、上記のように、２つまたは３つの接合部８２が互いに離れて平行配置された例に限定されるものではなく、４つ以上の接合部８２を有していてもよい。クリップ８は、複数の接合部８２のうち少なくとも２つの接合部８２が、半導体素子３の第２電極３２の外郭をなす辺のうち対向する二辺に沿って配置され、その二辺の近傍を含む領域に接合されることが好ましい。ここでいう「近傍」とは、例えば限定するものではないが、第２電極３２の外郭をなす辺から１ｍｍ以内の距離に位置する部位を意味する。クリップ８は、接合部８２の数、配置や寸法等については、接合される半導体素子３の電極に応じて適宜変更されてもよい。
　本変形例によっても、上記第３実施形態と同様の効果が得られる半導体装置１となる。
　（第４実施形態）
　第４実施形態の半導体装置１について説明する。
　本実施形態の半導体装置１は、例えば図１１に示すように、半導体素子３が表面３ａに２つの第２電極３２を有し、２つの第２電極３２に異なるクリップ８が接合されている点、および絶縁層７を有しない点で上記第１実施形態と相違する。本実施形態では、この相違点について主に説明する。
　半導体素子３は、本実施形態では、表面３ａに互いに離れて配置された２つの第２電極３２を有してなる。半導体素子３は、２つの第２電極３２が裏面３ｂの第１電極３１と対をなしており、第３電極３３への電圧印加により厚み方向、すなわち縦方向に電流が生じる構成となっている。
　クリップ８は、半導体素子３の第２電極３２の数と同数とされ、それぞれ異なる第２電極３２に接合材４を介して接合される。２つのクリップ８は、１つの半導体素子３に接合されると共に、互いに独立しており、他方のクリップ８と接触しないように配置される。これにより、半導体装置１は、半導体素子３のうち２つの第２電極３２の隙間の領域が、クリップ８と接合された領域よりも放熱性が小さくなり、発熱箇所が分散されることで、クリップ８の近傍に位置する部分における局所的な熱集中が抑制される。
　本実施形態によっても、上記第１実施形態と同様の効果が得られる半導体装置１となる。また、絶縁層７を有しないため、本実施形態の半導体装置１は、上記第２実施形態と同様の効果も得られる。
　（他の実施形態）
　本開示は、実施例に準拠して記述されたが、本開示は当該実施例や構造に限定されるものではないと理解される。本開示は、様々な変形例や均等範囲内の変形をも包含する。加えて、様々な組み合わせや形態、さらには、それらの一要素のみ、それ以上、あるいはそれ以下、を含む他の組み合わせや形態をも、本開示の範疇や思想範囲に入るものである。
　例えば、上記各実施形態では、１つのダイパッド２１に半導体素子３および制御ＩＣ６がそれぞれ１つずつ搭載された構成を代表例として説明したが、半導体装置１の構成は、これに限定されるものではない。例えば、半導体装置１は、独立した複数のダイパッド２１を有し、半導体素子３と制御ＩＣ６とが異なるダイパッド２１に搭載されていてもよい。
　また、半導体装置１は、封止材９内に制御ＩＣ６を有さず、外部に配置された制御ＩＣ６に半導体素子３が接続される構成であってもよい。
　さらに、半導体装置１は、例えば、封止材９内に２つの半導体素子３が配置された構成、いわゆる２ｉｎ１であってもよいし、封止材９内に３つ以上の半導体素子３が配置された構成であってもよい。この場合、リードフレーム２の構成やクリップ８の数等については、半導体素子３の数等に応じて、適宜変更される。

Claims (8)

  1. 　半導体装置であって、
    　リードフレーム（２）と、
    　前記リードフレームの上に搭載される半導体素子（３）と、
    　前記半導体素子のうち前記リードフレームとは反対側の表面（３ａ）の電極（３２）に接合材（４）を介して接合されるクリップ（８）と、
    　前記半導体素子および前記クリップを覆う封止材（９）と、
    　前記半導体素子と前記クリップとの間の領域であって、前記接合材を介して接合されている部分を接合領域（Ｒｊ）として、前記接合領域に配置される熱抵抗部（７、８１）と、を備え、
    　前記熱抵抗部は、前記接合領域のうち前記熱抵抗部とは異なる領域よりも熱抵抗が大きい、半導体装置。
  2. 　前記熱抵抗部は、絶縁層（７）である、請求項１に記載の半導体装置。
  3. 　前記絶縁層は、前記接合領域であって、前記電極の外郭とは距離を隔てた位置に１つ配置されている、請求項２に記載の半導体装置。
  4. 　前記絶縁層は、互いに独立した複数の島部（７１）により構成されており、
    　複数の前記島部は、前記接合領域であって、前記電極の外郭とは距離を隔てた位置にそれぞれ配置されている、請求項２に記載の半導体装置。
  5. 　前記熱抵抗部は、前記クリップのうち前記半導体素子と向き合う接合面（８ａ）に設けられた凹部（８１）である、請求項１に記載の半導体装置。
  6. 　半導体装置であって、
    　リードフレーム（２）と、
    　前記リードフレームの上に搭載される半導体素子（３）と、
    　前記半導体素子のうち前記リードフレームとは反対側の表面（３ａ）の電極（３２）に接合材（４）を介して接続されるクリップ（８）と、
    　前記半導体素子および前記クリップを覆う封止材（９）と、を備え、
    　前記クリップは、互いに隙間を隔てて配置され、前記接合材を介して前記半導体素子に接合される複数の接合部（８２）を有し、
    　複数の前記接合部のうち少なくとも２つの前記接合部は、延設された方向を揃えて平行配置され、それぞれ前記電極のうち外郭近傍を含む領域に接続されている、半導体装置。
  7. 　半導体装置であって、
    　リードフレーム（２）と、
    　前記リードフレームの上に搭載される半導体素子（３）と、
    　前記半導体素子のうち前記リードフレームとは反対側の表面（３ａ）に接合材（４）を介して接続される複数のクリップ（８）と、
    　前記半導体素子および前記クリップを覆う封止材（９）と、を備え、
    　複数の前記クリップは、互いに隙間を隔てて配置されている、半導体装置。
  8. 　前記半導体素子は、前記表面に互いに独立した２つの電極（３２）を有し、
    　２つの前記電極は、それぞれ異なる前記クリップが接続されている、請求項７に記載の半導体装置。
PCT/JP2022/019961 2021-06-04 2022-05-11 半導体装置 WO2022255053A1 (ja)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004047800A (ja) * 2002-07-12 2004-02-12 Toyota Industries Corp 接続部材及び接続構造
JP2012069640A (ja) * 2010-09-22 2012-04-05 Toshiba Corp 半導体装置及び電力用半導体装置
JP2015072942A (ja) * 2013-10-01 2015-04-16 ローム株式会社 半導体装置
JP2019192751A (ja) * 2018-04-24 2019-10-31 ローム株式会社 半導体装置
JP2021093441A (ja) * 2019-12-10 2021-06-17 富士電機株式会社 半導体モジュール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004047800A (ja) * 2002-07-12 2004-02-12 Toyota Industries Corp 接続部材及び接続構造
JP2012069640A (ja) * 2010-09-22 2012-04-05 Toshiba Corp 半導体装置及び電力用半導体装置
JP2015072942A (ja) * 2013-10-01 2015-04-16 ローム株式会社 半導体装置
JP2019192751A (ja) * 2018-04-24 2019-10-31 ローム株式会社 半導体装置
JP2021093441A (ja) * 2019-12-10 2021-06-17 富士電機株式会社 半導体モジュール

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