JP2014504017A - 半導体装置およびそれを製造するための方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000002955 isolation Methods 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 230000005684 electric field Effects 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 238000000206 photolithography Methods 0.000 claims description 12
- 238000005468 ion implantation Methods 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 77
- 238000007796 conventional method Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】
半導体装置は、基板と、基板内に配置される活性領域と、基板内に形成され、活性領域に配置される複数の電界緩和リングと、電界緩和リング間に形成される複数の分離トレンチと、少なくとも2つの隣接する分離トレンチを電気的に接続する接続チャネルと、を含む。
【選択図】図5
Description
Claims (9)
- 基板と、
前記基板内に配置される活性領域と、
前記基板内に形成され、前記活性領域の外側に配置される複数の電界緩和リングと、
前記電界緩和リングの間に形成される複数の分離トレンチと、
少なくとも2つの隣接する分離トレンチを電気的に接続する接続チャネルと、
を含む半導体装置。 - 前記接続チャネルは、接続トレンチである請求項1に記載の半導体装置。
- 前記活性領域に形成される活性領域トレンチをさらに含み、
前記接続トレンチ、分離トレンチおよび活性領域トレンチは、同一のフォトリソグラフィ工程によって形成される、請求項2に記載の半導体装置。 - 前記接続トレンチ、分離トレンチおよび活性領域トレンチは、同一のドーピング状態を有する請求項2に記載の半導体装置。
- 前記基板上に形成された誘電体層をさらに含み、
前記誘電体層には、ビアが形成されており、
前記接続チャネルは、前記ビアに充填された金属と、前記誘電体層上に形成された金属層と、を含み、
前記ビアに充填された金属は、少なくとも2つの隣接するトレンチを前記金属層に接続する、請求項1に記載の半導体装置。 - 前記半導体装置は、トレンチMOS装置であり、主接合をさらに含み、
前記複数の電界緩和リングおよび主接合は、同一の注入工程により形成され同一のドーピング状態を有する、請求項1〜5のいずれか一項に記載の半導体装置。 - 基板を提供する段階と、
前記基板内に、活性領域トレンチ、複数の分離トレンチ、および少なくとも2つの隣接する当該分離トレンチを電気的に接続する接続トレンチを同時に形成する段階と、
活性領域の主接合および前記分離トレンチの間に形成される複数の電界緩和リングを同時に形成する段階と、
を含む半導体装置を製造する方法。 - 前記活性領域の主接合および複数の電界緩和リングは、イオン注入によって形成される、請求項7に記載の方法。
- 活性領域を有する基板を提供する段階と、
前記基板内に、前記活性領域外側の複数の電界緩和リングと、当該電界緩和リング間の複数の分離トレンチとを形成する段階と、
前記基板上に誘電体層を形成する段階と、
前記誘電体層内に、前記分離トレンチまで伸延するビアを形成する段階と、
前記ビアを金属で充填する段階と、
前記誘電体層上に金属層を形成する段階と、
を含み、
前記ビア内の金属および金属層は、少なくとも2つの前記分離トレンチを接続する接続チャネルを形成する、半導体装置を製造する方法。
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CN201010603278.X | 2010-12-23 | ||
CN201010603278.XA CN102569388B (zh) | 2010-12-23 | 2010-12-23 | 半导体器件及其制造方法 |
PCT/CN2011/083110 WO2012083784A1 (en) | 2010-12-23 | 2011-11-29 | Semiconductor device and method for fabricating the same |
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CN106684061A (zh) * | 2016-12-14 | 2017-05-17 | 中国电子科技集团公司第五十五研究所 | 一种磷化铟背孔的制作方法 |
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CN103794639B (zh) * | 2012-10-29 | 2018-01-16 | 无锡华润上华科技有限公司 | 半导体器件 |
CN103187355B (zh) * | 2013-01-29 | 2015-10-28 | 中航(重庆)微电子有限公司 | 具有隔离结构的半导体衬底及其制备方法 |
CN103280452A (zh) * | 2013-05-13 | 2013-09-04 | 成都瑞芯电子有限公司 | 量子场分布的Trench MOSFET沟槽终端结构及制造方法 |
CN104701174B (zh) * | 2013-12-09 | 2017-12-05 | 上海华虹宏力半导体制造有限公司 | 用于优化中压沟槽栅mos加工工艺的方法 |
CN106298478A (zh) * | 2015-06-03 | 2017-01-04 | 北大方正集团有限公司 | 一种功率器件分压结构及其制作方法 |
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CN100555635C (zh) * | 2008-04-11 | 2009-10-28 | 苏州硅能半导体科技股份有限公司 | 一种功率沟槽式mos场效应管及其制造方法 |
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JP2007123570A (ja) * | 2005-10-28 | 2007-05-17 | Toyota Industries Corp | 半導体装置 |
JP2009032728A (ja) * | 2007-07-24 | 2009-02-12 | Sanken Electric Co Ltd | 半導体装置 |
JP2010010263A (ja) * | 2008-06-25 | 2010-01-14 | Panasonic Corp | 縦型半導体装置 |
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CN106684061A (zh) * | 2016-12-14 | 2017-05-17 | 中国电子科技集团公司第五十五研究所 | 一种磷化铟背孔的制作方法 |
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