CN102569388B - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN102569388B CN102569388B CN201010603278.XA CN201010603278A CN102569388B CN 102569388 B CN102569388 B CN 102569388B CN 201010603278 A CN201010603278 A CN 201010603278A CN 102569388 B CN102569388 B CN 102569388B
- Authority
- CN
- China
- Prior art keywords
- limiting ring
- groove
- isolated groove
- field limiting
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 45
- 238000001459 lithography Methods 0.000 claims description 17
- 239000002019 doping agent Substances 0.000 claims description 16
- 238000002513 implantation Methods 0.000 claims description 12
- 238000011049 filling Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 15
- 238000005530 etching Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 69
- 239000000463 material Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 230000005684 electric field Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010603278.XA CN102569388B (zh) | 2010-12-23 | 2010-12-23 | 半导体器件及其制造方法 |
| PCT/CN2011/083110 WO2012083784A1 (en) | 2010-12-23 | 2011-11-29 | Semiconductor device and method for fabricating the same |
| JP2013545021A JP6103712B2 (ja) | 2010-12-23 | 2011-11-29 | 半導体装置およびそれを製造するための方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010603278.XA CN102569388B (zh) | 2010-12-23 | 2010-12-23 | 半导体器件及其制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102569388A CN102569388A (zh) | 2012-07-11 |
| CN102569388B true CN102569388B (zh) | 2014-09-10 |
Family
ID=46313140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010603278.XA Active CN102569388B (zh) | 2010-12-23 | 2010-12-23 | 半导体器件及其制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6103712B2 (ja) |
| CN (1) | CN102569388B (ja) |
| WO (1) | WO2012083784A1 (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794639B (zh) * | 2012-10-29 | 2018-01-16 | 无锡华润上华科技有限公司 | 半导体器件 |
| CN103187355B (zh) * | 2013-01-29 | 2015-10-28 | 中航（重庆）微电子有限公司 | 具有隔离结构的半导体衬底及其制备方法 |
| CN103280452A (zh) * | 2013-05-13 | 2013-09-04 | 成都瑞芯电子有限公司 | 量子场分布的Trench MOSFET沟槽终端结构及制造方法 |
| CN104701174B (zh) * | 2013-12-09 | 2017-12-05 | 上海华虹宏力半导体制造有限公司 | 用于优化中压沟槽栅mos加工工艺的方法 |
| CN106298478A (zh) * | 2015-06-03 | 2017-01-04 | 北大方正集团有限公司 | 一种功率器件分压结构及其制作方法 |
| CN106684061B (zh) * | 2016-12-14 | 2019-01-25 | 中国电子科技集团公司第五十五研究所 | 一种磷化铟背孔的制作方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004107448A1 (en) * | 2003-05-31 | 2004-12-09 | Koninklijke Philips Electronics N.V. | Semiconductor device having an edge termination structure and method of manufacture thereof |
| CN101211981A (zh) * | 2007-12-22 | 2008-07-02 | 苏州硅能半导体科技股份有限公司 | 一种深沟槽大功率mos器件及其制造方法 |
| CN101261992A (zh) * | 2008-04-11 | 2008-09-10 | 苏州硅能半导体科技股份有限公司 | 一种功率沟槽式mos场效应管及其制造方法 |
| CN201185190Y (zh) * | 2008-04-21 | 2009-01-21 | 苏州硅能半导体科技股份有限公司 | 提高半导体功率器件静电保护性能的结终端保护结构 |
| CN101840933A (zh) * | 2010-04-13 | 2010-09-22 | 苏州博创集成电路设计有限公司 | 带表面缓冲环终端结构的超结金属氧化物场效应晶体管 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0113143D0 (en) * | 2001-05-29 | 2001-07-25 | Koninl Philips Electronics Nv | Manufacture of trench-gate semiconductor devices |
| GB0312514D0 (en) * | 2003-05-31 | 2003-07-09 | Koninkl Philips Electronics Nv | Termination structures for semiconductor devices and the manufacture thereof |
| JP2007123570A (ja) * | 2005-10-28 | 2007-05-17 | Toyota Industries Corp | 半導体装置 |
| US7800185B2 (en) * | 2007-01-28 | 2010-09-21 | Force-Mos Technology Corp. | Closed trench MOSFET with floating trench rings as termination |
| JP5315638B2 (ja) * | 2007-07-24 | 2013-10-16 | サンケン電気株式会社 | 半導体装置 |
| WO2009148695A2 (en) * | 2008-06-02 | 2009-12-10 | Maxpower Semiconductor Inc. | Edge termination for semiconductor devices |
| JP2010010263A (ja) * | 2008-06-25 | 2010-01-14 | Panasonic Corp | 縦型半導体装置 |
-
2010
- 2010-12-23 CN CN201010603278.XA patent/CN102569388B/zh active Active
-
2011
- 2011-11-29 JP JP2013545021A patent/JP6103712B2/ja active Active
- 2011-11-29 WO PCT/CN2011/083110 patent/WO2012083784A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004107448A1 (en) * | 2003-05-31 | 2004-12-09 | Koninklijke Philips Electronics N.V. | Semiconductor device having an edge termination structure and method of manufacture thereof |
| CN101211981A (zh) * | 2007-12-22 | 2008-07-02 | 苏州硅能半导体科技股份有限公司 | 一种深沟槽大功率mos器件及其制造方法 |
| CN101261992A (zh) * | 2008-04-11 | 2008-09-10 | 苏州硅能半导体科技股份有限公司 | 一种功率沟槽式mos场效应管及其制造方法 |
| CN201185190Y (zh) * | 2008-04-21 | 2009-01-21 | 苏州硅能半导体科技股份有限公司 | 提高半导体功率器件静电保护性能的结终端保护结构 |
| CN101840933A (zh) * | 2010-04-13 | 2010-09-22 | 苏州博创集成电路设计有限公司 | 带表面缓冲环终端结构的超结金属氧化物场效应晶体管 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6103712B2 (ja) | 2017-03-29 |
| JP2014504017A (ja) | 2014-02-13 |
| CN102569388A (zh) | 2012-07-11 |
| WO2012083784A1 (en) | 2012-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6673856B2 (ja) | 炭化珪素装置および炭化珪素装置の形成方法 | |
| CN105280711B (zh) | 电荷补偿结构及用于其的制造 | |
| CN102569388B (zh) | 半导体器件及其制造方法 | |
| CN109698197A (zh) | 用于产生具有dV/dt可控性的IGBT的方法 | |
| JP2010147405A (ja) | 半導体装置およびその製造方法 | |
| CN109768091B (zh) | 一种双沟槽SS-SiC MOSFET结构 | |
| US9159785B2 (en) | Semiconductor device having buried layer and method for forming the same | |
| CN106847904A (zh) | 用于套筒天线的GaAs/Ge/GaAs异质结构SPiN二极管串的制备方法 | |
| JP2024516448A (ja) | 半導体デバイスのセル構造及び半導体デバイス | |
| JP2003086800A (ja) | 半導体装置及びその製造方法 | |
| CN109979936A (zh) | 一种集成半导体器件和电子装置 | |
| EP2551910B1 (en) | Insulated gate semiconductor device with optimized breakdown voltage and manufacturing method thereof | |
| CN103208529B (zh) | 半导体二极管以及用于形成半导体二极管的方法 | |
| CN110379848A (zh) | 一种具有截止环结构的功率半导体器件及其制作方法 | |
| CN103545381B (zh) | 一种水平结构沟槽肖特基半导体装置及其制备方法 | |
| CN107046029B (zh) | 静电放电保护结构及其形成方法 | |
| CN104282689A (zh) | 嵌入frd的igbt器件及制造方法 | |
| CN103531617B (zh) | 一种具有沟槽终端结构肖特基器件及其制备方法 | |
| SE541291C2 (en) | Feeder design with high current capability | |
| CN103779416B (zh) | 一种低vf的功率mosfet器件及其制造方法 | |
| CN112397590A (zh) | 功率半导体器件及用于制造功率半导体器件的方法 | |
| CN102737993B (zh) | 沟槽dmos器件及其制造方法 | |
| CN106847899A (zh) | 用于可重构偶极子天线的GaAs/Ge/GaAsSPiN二极管串的制备方法 | |
| CN203721734U (zh) | 一种低vf的功率mosfet器件 | |
| CN106449734A (zh) | GaAs‑Ge‑GaAs异质结构的SPiN二极管及其制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Co-patentee before: Wuxi Huarun Shanghua Technology Co., Ltd. Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |