JP2014029999A - 仮固定用フィルム、仮固定用フィルムシート及び半導体装置の製造方法 - Google Patents
仮固定用フィルム、仮固定用フィルムシート及び半導体装置の製造方法 Download PDFInfo
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- JP2014029999A JP2014029999A JP2013134149A JP2013134149A JP2014029999A JP 2014029999 A JP2014029999 A JP 2014029999A JP 2013134149 A JP2013134149 A JP 2013134149A JP 2013134149 A JP2013134149 A JP 2013134149A JP 2014029999 A JP2014029999 A JP 2014029999A
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- temporary fixing
- semiconductor wafer
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- fixing film
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Images
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】支持部材60及び半導体ウェハ70の間に、テトラカルボン酸二無水物を全酸二無水物に対し20モル%以上含む酸二無水物とジアミンとを反応させて得られるポリイミド樹脂を含んでなる仮固定用フィルム20を介在させ、支持部材に半導体ウェハを仮固定する工程と、支持部材に仮固定された半導体ウェハに所定の加工を施す工程と、有機溶剤を仮固定用フィルムに接触させて仮固定用フィルムの一部又は全部を溶解し、支持部材から加工された半導体ウェハを分離する工程と、加工された半導体ウェハを個片化する工程と、を有する。
【選択図】図5
Description
式(A−3)中、R1及びR2はそれぞれ独立に炭素数1〜5のアルキレン基又はフェニレン基を示し、R3、R4、R5及びR6はそれぞれ独立に炭素数1〜5のアルキル基、フェニル基又はフェノキシ基を示し、mは1〜90の整数を示す。
式(A−3)中、R1及びR2はそれぞれ独立に炭素数1〜5のアルキレン基又はフェニレン基を示し、R3、R4、R5及びR6はそれぞれ独立に炭素数1〜5のアルキル基、フェニル基又はフェノキシ基を示し、mは1〜90の整数を示す。
H2N−(CH2)3−O−(CH2)4−O−(CH2)3−NH2、
H2N−(CH2)3−O−(CH2)6−O−(CH2)3−NH2、
H2N−(CH2)3−O−(CH2)2−O−(CH2)2−O−(CH2)3−NH2、
H2N−(CH2)3−O−(CH2)2−O−(CH2)2−O−(CH2)2−O−(CH2)3−NH2
等が挙げられる。
式(A−3)中、R1及びR2はそれぞれ独立に炭素数1〜5のアルキレン基又はフェニレン基を示し、R3、R4、R5及びR6はそれぞれ独立に炭素数1〜5のアルキル基、フェニル基又はフェノキシ基を示し、mは1〜90の整数を示す。
式(B−1)中、Xは、フェニル基、グリシドキシ基、アクリロイル基、メタクリロイル基、メルカプト基、アミノ基、ビニル基、イソシアネート基及びメタクリロキシ基からなる群より選択される有機基を示し、sは0又は1〜10の整数を示し、R11、R12及びR13は各々独立に、炭素数1〜10のアルキル基を示す。
撹拌機、温度計、窒素置換装置(窒素流入管)、及び水分受容器付きの還流冷却器を備えたフラスコ内に、ジアミンである、BAPP(商品名、東京化成製、2,2−ビス[4−(4−アミノフェノキシ)フェニル]プロパン)、分子量410.51)を10.26g(0.025mol)及び1,4−ブタンジオール ビス(3−アミノプロピル)エーテル(東京化成製、商品名:B−12、分子量:204.31)5.10g(0.025mol)と、溶媒である、N−メチル−2−ピロリドン(NMP)100gとを仕込み、撹拌してジアミンを溶媒に溶解させた。
撹拌機、温度計、窒素置換装置(窒素流入管)、及び水分受容器付きの還流冷却器を備えたフラスコ内に、ジアミンである、BAPP(東京化成製、商品名:2,2−ビス[4−(4−アミノフェノキシ)フェニル]プロパン)、分子量410.51)を8.21g(0.02mol)及び長鎖シロキサンジアミン(信越化学製、商品名:KF8010、分子量:960)28.8g(0.03mol)と、溶媒である、N−メチル−2−ピロリドン(NMP)100gとを仕込み、撹拌してジアミンを溶媒に溶解させた。
撹拌機、温度計、窒素置換装置(窒素流入管)、及び水分受容器付きの還流冷却器を備えたフラスコ内に、ジアミンである、B−12(東京化成製、1,4−ブタンジオール ビス(3−アミノプロピル)エーテル、分子量204.31)を2.04g(0.01mol)、1,3−ビス(3−アミノフェノキシ)ベンゼン(東京化成製、APB−N、分子量292.34)10.23g(0.035mol)及び側鎖フェニル基含有長鎖シロキサンジアミン(信越化学製、商品名:X−22−1660B―3、分子量:4400)22g(0.005mol)と、溶媒である、N−メチル−2−ピロリドン(NMP)100gとを仕込み、撹拌してジアミンを溶媒に溶解させた。
撹拌機、温度計、窒素置換装置(窒素流入管)、及び水分受容器付きの還流冷却器を備えたフラスコ内に、ジアミンである、1,3−ビス(3−アミノフェノキシ)ベンゼン(東京化成製、APB−N、分子量292.34)13.15g(0.045mol)及び側鎖フェニル基含有長鎖シロキサンジアミン(信越化学製、商品名:X−22−1660B―3、分子量:4400)22g(0.005mol)と、溶媒である、N−メチル−2−ピロリドン(NMP)100gとを仕込み、撹拌してジアミンを溶媒に溶解させた。
撹拌機、温度計、窒素置換装置(窒素流入管)、及び水分受容器付きの還流冷却器を備えたフラスコ内に、ジアミンである、BAPP(東京化成製、商品名:2,2−ビス[4−(4−アミノフェノキシ)フェニル]プロパン)、分子量410.51)を20.52g(0.05mol)と、溶媒である、N−メチル−2−ピロリドン(NMP)100gとを仕込み、撹拌してジアミンを溶媒に溶解させた。
[ワニスの調製]
表2〜4に示す組成(単位は質量部)に基づいて、各材料をNMP溶媒中に固形分濃度が50質量%になるように溶解混合してフィルムを形成するためのワニスをそれぞれ作製した。
SKダイン1435:アクリル系粘着剤(綜研化学製)
A−DCP:トリシクロデカンジメタノールジアクリレート(新中村化学社製)
A−9300:エトキシ化イソシアヌル酸トリアクリレート(新中村化学社製)
A−DOG:1,10−デカンジオールアクリレート(新中村化学社製)
UA−512:2官能ウレタンアクリレート(新中村化学社製)
YDF−8170:ビスフェノールF型ビスグリシジルエーテル(東都化成社製)
VG−3101:高耐熱3官能エポキシ樹脂(プリンテック社製)
パークミルD:ジクミルパーオキサイド(日油製)
H27:トリメトキシフェニルシラン修飾球状シリカフィラ(CIKナノテック製)
SC2050SEJ:3−グリシドキシプロピルトリエトキシシラン修飾球状シリカフィラ
HD1100Z:フッ素系表面改質材(ダイキン工業製)
FA−200:フッ素系表面改質材(日産化学製)
2PZ−CN:イミダゾール系硬化促進剤(四国化成製)
作製したワニスをセパレータフィルム(PETフィルム)上にナイフコーターを用いて塗布した後、80℃のオーブンで30分間、ついで、120度のオーブンで30分間乾燥させることによって、厚さ30μmの仮固定用フィルムを作製した。
支持台上に載せたシリコンウェハ(6インチ径、厚さ400μm)の裏面(支持台と反対側の面)に、仮固定用フィルムをロール(温度150℃、線圧4kgf/cm、送り速度0.5m/分)で加圧することにより積層した。PETフィルムを剥がし、仮固定用フィルム上に、厚み80μm、幅10mm、長さ40mmのポリイミドフィルム「ユーピレックス」(商品名)を前記と同様の条件でロールにより加圧して積層した。このようにして準備したサンプルについて、レオメータ「ストログラフE−S」(商品名)を用いて、室温で90°ピール試験を行って、仮固定用フィルムとユーピレックスとの間のピール強度を測定した。ピール強度が2N/cm以上のサンプルをA、2N/cm未満のサンプルをCとした。
支持台上に載せたシリコンウェハ(6インチ径、厚さ400μm)の裏面(支持台と反対側の面)に、仮固定フィルムをロール(温度80℃、線圧4kgf/cm、送り速度0.5m/分)で加圧することにより積層した。PETフィルムを剥がし、仮固定用フィルム上に、感圧型のダイシングテープをラミネートした。その後、ダイサーを用いてウェハを3mm×3mmサイズのチップに個片化した。こうして得られた仮固定用フィルム付きチップを、10mm×10mm×0.40mm厚のシリコン基板上に、仮固定フィルムを挟んで、150℃の熱盤上で2000gf/10秒の条件で加熱圧着した。その後、120℃で1時間、180℃で1時間、260℃で10分間加熱した。得られたサンプルについて、Dage製接着力試験機Dage−4000を用いて、25℃の熱盤上で、測定速度:50μm/秒、測定高さ:50μmの条件でチップ側にせん断方向の外力を加えたときの接着力を測定し、これを25℃におけるせん断接着力とした。25℃でのせん断接着力が1MPa以上のものをA、1MPa未満のものをCとした。
上記低温貼付性試験と同様にして得られたサンプルを、ホットプレート上で120℃1時間、180℃1時間、260℃10分間加熱した。その後、サンプルを観察し、発泡が見られなかったサンプルをA、発泡が観察されたサンプルをCとした。
支持台上に載せた1/4シリコンウェハ(6インチ径、厚さ400μmの1/4)の裏面(支持台と反対側の面)に、仮固定用フィルムをロール(温度150℃、線圧4kgf/cm、送り速度0.5m/分)で加圧することにより積層した。PETフィルムを剥がしたのち、上記低温貼付性試験と同様にして得られたサンプルを、ホットプレート上で120℃1時間、180℃1時間、260℃10分間加熱した。その後、NMPを満たしたガラス容器にサンプルを入れ、超音波洗浄機を用いて仮固定用フィルムを溶解させた。仮固定用フィルムが溶解したサンプルをA、溶解しなかったサンプルをCとした。
支持台上に載せた1/4シリコンウェハ(6インチ径、厚さ400μmの1/4)の裏面(支持台と反対側の面)に、仮固定用フィルムをロール(温度150℃、線圧4kgf/cm、送り速度0.5m/分)で加圧することにより積層した。PETフィルムを剥がしたのち、上記低温貼付性試験と同様にして得られたサンプルを、ホットプレート上で120℃1時間、180℃1時間、260℃10分間加熱した。その後、n−プロピルアルコール及び25%TMAH水溶液を同体積で混合した混合溶媒を満たしたガラス容器にサンプルを入れ、超音波洗浄機を用いて仮固定用フィルムを溶解させた。仮固定用フィルムが溶解したサンプルをA、溶解しなかったサンプルをCとした。
Claims (24)
- 半導体ウェハを加工し個片化して得られる半導体素子を備える半導体装置の製造方法であって、
支持部材及び半導体ウェハの間に、下記一般式(I−1)で表されるテトラカルボン酸二無水物を全酸二無水物に対し20モル%以上含む酸二無水物とジアミンとを反応させて得られるポリイミド樹脂を含んでなる仮固定用フィルムを介在させ、前記支持部材に前記半導体ウェハを仮固定する工程と、
前記支持部材に仮固定された前記半導体ウェハに所定の加工を施す工程と、
有機溶剤を前記仮固定用フィルムに接触させて前記仮固定用フィルムの一部又は全部を溶解し、前記支持部材から加工された前記半導体ウェハを分離する工程と、
加工された前記半導体ウェハを個片化する工程と、
を有する、半導体装置の製造方法。
[式(I−1)中、nは2〜20の整数を示す。] - 前記仮固定用フィルムが無機フィラを更に含有する、請求項1〜4のいずれか一項に記載の半導体装置の製造方法。
- 前記無機フィラが表面に有機基を有する、請求項5に記載の半導体装置の製造方法。
- 前記仮固定用フィルムが、炭素−炭素不飽和結合を有するラジカル重合性化合物及びラジカル発生剤を更に含有する、請求項1〜6のいずれか一項に記載の半導体装置の製造方法。
- 前記仮固定用フィルムがエポキシ樹脂を更に含有する、請求項1〜7のいずれか一項に記載の半導体装置の製造方法。
- 前記仮固定用フィルムが、フッ素原子を有する表面改質剤、ポリオレフィンワックス及びシリコーンオイルからなる群より選択される1種以上を更に含有する、請求項1〜8のいずれか一項に記載の半導体装置の製造方法。
- 前記仮固定用フィルムが、少なくとも一方の面に接着力が周囲の面よりも小さい低接着力面を有するものである、請求項1〜9のいずれか一項に記載の半導体装置の製造方法。
- 前記半導体ウェハがエッジトリミングされた円盤状であり、該半導体ウェハのエッジトリミングを有する側と前記支持部材との間に、前記半導体ウェハのエッジトリミングを有する側よりも直径が小さい形状を有する前記仮固定用フィルムを介在させ、前記支持部材に前記半導体ウェハを仮固定し、
前記所定の加工が、仮固定された前記半導体ウェハのエッジトリミングを有する側とは反対側の研削することを含む、請求項1〜10のいずれか一項に記載の半導体装置の製造方法。 - 無機フィラを更に含有する、請求項12〜15のいずれか一項に記載の仮固定用フィルム。
- 前記無機フィラが表面に有機基を有する、請求項16に記載の仮固定用フィルム。
- 炭素−炭素不飽和結合を有するラジカル重合性化合物及びラジカル発生剤を更に含有する、請求項12〜17のいずれか一項に記載の仮固定用フィルム。
- エポキシ樹脂を更に含有する、請求項12〜18のいずれか一項に記載の仮固定用フィルム。
- フッ素原子を有する表面改質剤、ポリオレフィンワックス及びシリコーンオイルからなる群より選択される1種以上を更に含有する、請求項12〜19のいずれか一項に記載の仮固定用フィルム。
- 少なくとも一方の面に接着力が周囲の面よりも小さい低接着力面を有する、請求項12〜20のいずれか一項に記載の仮固定用フィルム。
- 支持基材と、該支持基材上に設けられた、請求項12〜21のいずれか一項に記載の仮固用フィルムと、を備える、仮固定用フィルムシート。
- 半導体ウェハを個片化して得られる半導体素子を備える半導体装置の製造方法であって、
支持部材と前記半導体ウェハとの間に請求項12〜21のいずれか一項に記載の仮固定用フィルムを配置し、前記支持部材と前記半導体ウェハとを仮固定する仮固定工程と、
前記支持部材に仮固定された前記半導体ウェハにおける前記仮固定用フィルムと反対側の面を研削する研削工程と、
研削された前記半導体ウェハから前記仮固定用フィルムを剥離する半導体ウェハ剥離工程と、を備え、
前記半導体ウェハとして、前記支持部材と対向する面の外周部にエッジトリミングが施された半導体ウェハを用い、
前記仮固定工程において、前記エッジトリミング部分よりも内側に前記仮固定用フィルムを配置することを特徴とする半導体装置の製造方法。 - 前記支持部材から前記仮固定用フィルムを剥離する支持部材剥離工程を更に備え、
前記支持部材として、前記仮固定用フィルムに対向する面の一部又は全部が離型処理された支持部材を用いることを特徴とする請求項23に記載の半導体装置の製造方法。
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WO2015182469A1 (ja) * | 2014-05-30 | 2015-12-03 | 富士フイルム株式会社 | 仮接着膜、積層体、仮接着用組成物、デバイスの製造方法およびキット |
WO2016021646A1 (ja) * | 2014-08-08 | 2016-02-11 | 東レ株式会社 | 仮貼り用接着剤、接着剤層、ウエハ加工体およびこれを用いた半導体装置の製造方法、リワーク溶剤、ポリイミド共重合体、ポリイミド混合樹脂、ならびに樹脂組成物 |
JP2016204661A (ja) * | 2015-04-22 | 2016-12-08 | デンカ株式会社 | 組成物 |
JP2016219511A (ja) * | 2015-05-15 | 2016-12-22 | 日立化成株式会社 | 仮固定用樹脂組成物、仮固定用樹脂フィルム及び仮固定用樹脂フィルムシート |
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JP6209876B2 (ja) | 2017-10-11 |
TW201411742A (zh) | 2014-03-16 |
CN104412369B (zh) | 2017-05-24 |
US20150179494A1 (en) | 2015-06-25 |
JPWO2014003056A1 (ja) | 2016-06-02 |
WO2014003056A1 (ja) | 2014-01-03 |
JP5962759B2 (ja) | 2016-08-03 |
KR101683705B1 (ko) | 2016-12-07 |
CN104412369A (zh) | 2015-03-11 |
TWI587407B (zh) | 2017-06-11 |
KR20150013771A (ko) | 2015-02-05 |
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