WO2016021646A1 - 仮貼り用接着剤、接着剤層、ウエハ加工体およびこれを用いた半導体装置の製造方法、リワーク溶剤、ポリイミド共重合体、ポリイミド混合樹脂、ならびに樹脂組成物 - Google Patents
仮貼り用接着剤、接着剤層、ウエハ加工体およびこれを用いた半導体装置の製造方法、リワーク溶剤、ポリイミド共重合体、ポリイミド混合樹脂、ならびに樹脂組成物 Download PDFInfo
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- WO2016021646A1 WO2016021646A1 PCT/JP2015/072248 JP2015072248W WO2016021646A1 WO 2016021646 A1 WO2016021646 A1 WO 2016021646A1 JP 2015072248 W JP2015072248 W JP 2015072248W WO 2016021646 A1 WO2016021646 A1 WO 2016021646A1
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- group
- residue
- carbon atoms
- diamine
- general formula
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/544—Silicon-containing compounds containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
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-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/14—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
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- C09J7/00—Adhesives in the form of films or foils
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C09J2301/00—Additional features of adhesives in the form of films or foils
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- C—CHEMISTRY; METALLURGY
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Definitions
- the present invention relates to an adhesive for temporary attachment, an adhesive layer, a wafer processed body, a method for manufacturing a semiconductor device using the same, a rework solvent, a polyimide copolymer, a polyimide mixed resin, and a resin composition.
- the semiconductor circuit forming substrate is fixed to a supporting substrate such as a silicon wafer or glass substrate having a support property to form a processed wafer, and polishing and backside circuit formation After processing and the like, the processed semiconductor circuit forming substrate is peeled from the support substrate.
- an adhesive for temporary attachment is used as an adhesive layer.
- Organic solvents, aqueous alkali solutions, etc. are called rework solvents.
- this temporary sticking adhesive is required to have heat resistance enough to withstand the semiconductor process, and to be easily peelable after completion of the processing process.
- a temporary sticking adhesive for example, a heat-resistant polyamide or polyimide-based adhesive layer is used to peel by heating and changing the adhesive force (see, for example, Patent Document 1) ) Etc.
- it has two types of adhesive layers, a thermoplastic organopolysiloxane adhesive layer and a curable modified siloxane adhesive layer, which have heat resistance, and the semiconductor circuit forming substrate and the support substrate are separated from each other.
- An adhesive that can be peeled by applying mechanical force at room temperature has been proposed (for example, Patent Document 2).
- what is comprised by one type of cycloolefin type adhesive bond layers and peels mechanically at room temperature is proposed (for example, patent document 3).
- JP 2010-254808 A (Claims) JP 2013-48215 A (Claims) JP 2013-241568 A (Claims)
- the adhesive for temporary attachment that can be peeled off only by heat treatment such as Patent Document 1
- the object of the present invention is to bond the semiconductor circuit forming substrate and the support substrate with one type of adhesive, have excellent heat resistance, and the adhesive force does not change even during the manufacturing process of the semiconductor device, etc.
- Adhesive for temporary attachment that can be peeled by applying mechanical force under mild conditions at room temperature or by dissolving in a rework solvent, adhesive layer, wafer processed body, and semiconductor device manufacturing method using the same It is to provide a rework solvent, a polyimide copolymer, a polyimide mixed resin, and a resin composition.
- the present invention provides a polysiloxane diamine having at least an acid dianhydride residue and a diamine residue, wherein the diamine residue is represented by (A1) general formula (1) and n is a natural number of 1 to 15.
- a polyimide copolymer comprising both a residue and a residue of a polysiloxane diamine represented by the general formula (1), wherein n is a natural number of 16 or more and 100 or less, wherein the residue of (A1)
- An adhesive for temporary sticking characterized in that it is a polyimide copolymer containing 40 to 99.99 mol% and containing 0.01 to 60 mol% of the residue (B1).
- n is a natural number.
- R 1 and R 2 may be the same or different and each represents an alkylene group or a phenylene group having 1 to 30 carbon atoms.
- R 3 to R 6 may be the same or different. It may be different and represents an alkyl group having 1 to 30 carbon atoms, a phenyl group or a phenoxy group.
- the present invention includes (A2) a residue of a polysiloxane diamine represented by the general formula (1) where n is a natural number of 1 or more and 15 or less, and represented by the general formula (1) and n is 16 or more and 100.
- Polyimides and / or precursors thereof that do not contain a polysiloxane-based diamine residue having the following natural numbers and (B2) a polysiloxane-based diamine that is represented by the general formula (1) and has a natural number n of 16 to 100
- a temporary sticking adhesive characterized in that it is a polyimide mixed resin containing 40 to 99.99% by weight of A2) and 0.01 to 60% by weight of (B2).
- n is a natural number.
- R 1 and R 2 may be the same or different and each represents an alkylene group or a phenylene group having 1 to 30 carbon atoms.
- R 3 to R 6 may be the same or different. It may be different and represents an alkyl group having 1 to 30 carbon atoms, a phenyl group or a phenoxy group.
- the present invention also provides (a) a resin (excluding a siloxane polymer represented by the general formula (2)), (b-1) a siloxane polymer represented by the general formula (2), and (b- 2) An adhesive for temporary attachment, which is a resin composition containing at least one of the compounds represented by the general formula (3).
- R 7 and R 8 may be the same or different and each represents a monovalent organic group having 1 to 30 carbon atoms and 0 to 3 nitrogen atoms.
- R 9 and R 10 may be the same or different and each represents an alkylene group or a phenylene group having 1 to 30 carbon atoms, and R 11 to R 14 may be the same or different and each have 1 to 30 carbon atoms.
- this invention is the adhesive bond layer which formed the coating film of the adhesive agent for temporary sticking of this invention.
- the present invention is a wafer processed body in which a semiconductor circuit laminated substrate and a support substrate are bonded via at least the adhesive layer of the present invention.
- the present invention is also a method for manufacturing a semiconductor device using the wafer processed body of the present invention, the step of thinly processing the semiconductor circuit forming substrate, the step of device processing the semiconductor circuit forming substrate of the wafer processed body, A step of peeling the semiconductor circuit forming substrate of the wafer processed body from a support substrate, and a cleaning of the semiconductor circuit forming substrate peeled from the wafer processed body or the adhesive layer adhering to the support substrate of the wafer processed body with a solvent
- a method of manufacturing a semiconductor device comprising at least one of the following steps:
- the present invention is a rework solvent for cleaning an adhesive layer adhering to a peeled semiconductor circuit forming substrate or a support substrate, and is represented by at least (A) an amine solvent, and (B) a general formula (6).
- a reworking solvent characterized by containing a solvent.
- R 25 and R 26 each independently represent hydrogen, an alkyl group having 1 to 12 carbon atoms, an acetyl group, or an aromatic group.
- R 27 represents hydrogen or a methyl group.
- B represents 0, 1 or 2;
- c is an integer of 1 to 3.
- the present invention also provides a polysiloxane diamine having at least an acid dianhydride residue and a diamine residue, wherein the diamine residue is represented by (A1) general formula (1) and n is a natural number of 1 to 15.
- (B1) a polyimide copolymer comprising both a residue of polysiloxane diamine represented by the general formula (1) and n being a natural number of 16 or more and 100 or less, the residue of (A1) Is a polyimide copolymer containing 40 to 99.99 mol% and 0.01 to 60 mol% of the residue (B1).
- n is a natural number.
- R 1 and R 2 may be the same or different and each represents an alkylene group or a phenylene group having 1 to 30 carbon atoms.
- R 3 to R 6 may be the same or different. It may be different and represents an alkyl group having 1 to 30 carbon atoms, a phenyl group or a phenoxy group.
- the present invention also provides (A2) a residue of a polysiloxane diamine having at least an acid dianhydride residue and a diamine residue, wherein n is a natural number of 1 or more and 15 or less, represented by the general formula (1).
- n is a natural number.
- R 1 and R 2 may be the same or different and each represents an alkylene group or a phenylene group having 1 to 30 carbon atoms.
- R 3 to R 6 may be the same or different. It may be different and represents an alkyl group having 1 to 30 carbon atoms, a phenyl group or a phenoxy group.
- the present invention also provides (a) a resin (excluding a siloxane polymer represented by the general formula (2)), (b-1) a siloxane polymer represented by the general formula (2), and (b- 2) A resin composition containing at least one of the compounds represented by the general formula (3), wherein (a) the resin has at least an acid dianhydride residue and a diamine residue, The polysiloxane diamine residue represented by the general formula (5) is contained therein, and the polysiloxane diamine residue represented by the general formula (5) is 40 mol% or more in the total diamine residues.
- R 7 and R 8 may be the same or different and each represents a monovalent organic group having 1 to 30 carbon atoms and 0 to 3 nitrogen atoms.
- R 9 and R 10 may be the same or different and each represents an alkylene group or a phenylene group having 1 to 30 carbon atoms, and each of R 11 to R 14 may be the same or different, and Represents an alkyl group having 1 to 30 carbon atoms, an alkylene group having 1 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a phenyl group or a phenoxy group.
- R 15 represents a monovalent organic group having 2 to 20 carbon atoms and 1 to 3 carbon atoms
- R 16 represents hydrogen, an alkyl group having 1 to 20 carbon atoms, or an aromatic group. Represents an integer of 0 to 4.
- R 19 and R 20 may be the same or different and each represents an alkylene group or a phenylene group having 1 to 30 carbon atoms.
- R 21 to R 24 are the same. Or may be different and represents an alkyl group having 1 to 30 carbon atoms, a phenyl group or a phenoxy group.
- the heat resistance is excellent, the semiconductor circuit forming substrate and the support substrate can be bonded with one type of adhesive, the heat resistance is excellent, and the adhesive force does not change even during the manufacturing process of the semiconductor device, etc.
- Adhesive for temporary attachment that can be peeled by applying mechanical force under mild conditions at room temperature or by dissolving in a rework solvent, adhesive layer, wafer processed body, and semiconductor device manufacturing method using the same , A rework solvent, a polyimide copolymer, a polyimide mixed resin, and a resin composition can be provided.
- the temporary sticking adhesive of the present invention is a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, wherein the diamine residue is represented by (A1) general formula (1) and n is A polyimide copolymer containing both a polysiloxane diamine residue having a natural number of 1 to 15 and a polysiloxane diamine residue (B1) represented by the general formula (1) and having a natural number n of 16 to 100. It is a polymer.
- N is a natural number.
- R 1 and R 2 may be the same or different and each represents an alkylene group or a phenylene group having 1 to 30 carbon atoms.
- R 3 to R 6 may be the same or different. And represents an alkyl group having 1 to 30 carbon atoms, a phenyl group or a phenoxy group.
- at the time of polymerizing polyimide at least (A1) a polysiloxane diamine represented by the general formula (1) and n is a natural number of 1 or more and 15 or less, and (B1) general It can create by making it copolymerize using the polysiloxane type diamine which is represented by Formula (1) and n is a natural number of 16-16.
- the adhesiveness of the surface of the adhesive layer can be reduced in the step of forming the adhesive layer on the substrate to be adhered. Then, the semiconductor circuit forming substrate and the supporting substrate can be bonded, and then peeled off by applying mechanical force under mild conditions at room temperature. Moreover, it can also peel
- residues of polysiloxane diamines represented by (A1) general formula (1) and n is a natural number of 1 to 15 are 40 to 99.99. Contains mol%.
- residues of polysiloxane diamine represented by the general formula (1) and n is a natural number of 1 or more and 15 or less is contained in the range of 40 to 99.99 mol%, good adhesiveness is exhibited.
- a semiconductor circuit formation substrate and a support substrate can be bonded together.
- the polyimide copolymer of the present invention contains (B1) 0.01 to 60 mol% of a polysiloxane diamine residue represented by the general formula (1), where n is a natural number of 16 or more and 100 or less. More preferably, it is 0.01 to 30 mol%.
- B1 By containing 0.01 to 60 mol% of a polysiloxane-based diamine residue represented by the general formula (1), where n is a natural number of 16 or more and 100 or less, the semiconductor circuit forming substrate and the supporting substrate are attached. It is possible to suppress the generation of voids in the adhesive layer during the element processing step after combining. Further, when the content of the residue (B1) is 0.01 to 30 mol%, voids are not generated in the adhesive layer during the element processing step, and good heat resistance can be exhibited, which is more preferable.
- the polyimide copolymer of the present invention is a polyimide precursor in which a part of the polyimide copolymer is closed by heating, whether it is a polyimide precursor that is closed by heating to become a polyimide or a polyimide that is closed by heating. There may be.
- the temporary sticking adhesive of the present invention is a polyimide mixed resin, and contains a residue of a polysiloxane diamine represented by (A2) general formula (1) and n is a natural number of 1 or more and 15 or less.
- a polyimide not containing a polysiloxane diamine residue represented by (1) and n being a natural number of 16 or more and 100 or less, and / or a precursor thereof, and (B2) represented by the general formula (1) and n is 16 or more Polyimide and / or precursor thereof containing a polysiloxane diamine residue having a natural number of 100 or less and not containing a polysiloxane diamine residue represented by the general formula (1) and having a natural number of 1 or more and 15 or less It is a polyimide mixed resin containing a body.
- the polyimide mixed resin of the present invention comprises (A2) a residue of a polysiloxane diamine represented by the general formula (1), where n is a natural number of 1 to 15, and represented by the general formula (1).
- a polysiloxane-based diamine residue that is a natural number of n and a polyimide that does not contain a polysiloxane-based diamine residue represented by the general formula (1) and n is a natural number of 1 to 15, and / or a precursor thereof It can be prepared by mixing the polymerization liquid or powder.
- An adhesive layer is formed on the base plate that becomes the adherend by mixing the polyimides (A2) and (B2) containing polysiloxane diamine residues having different polymerization degrees n and / or polyimide precursors.
- the adhesiveness of the surface of the adhesive layer can be lowered, so that the semiconductor circuit forming substrate and the supporting substrate can be bonded and then peeled off by applying mechanical force under mild conditions at room temperature. it can. Moreover, it can also peel
- the polyimide mixed resin of the present invention comprises (A2) a residue of a polysiloxane diamine represented by the general formula (1), where n is a natural number of 1 to 15, and represented by the general formula (1). 40 to 99.99% by weight of a polyimide that does not contain a polysiloxane diamine residue having a natural number of 100 or less and / or its precursor is contained. By containing 40 to 99.99% by weight of (A2), good adhesiveness can be exhibited, and the semiconductor circuit forming substrate and the supporting substrate can be bonded together.
- (B2) a polysiloxane-based diamine residue represented by the general formula (1) where n is a natural number of 16 or more and 100 or less, and represented by the general formula (1) where n is a natural number of 1 or more and 15 or less.
- the average molecular weight of the polysiloxane diamine can be obtained by calculating the amino group equivalent by neutralizing titration of the amino group of the polysiloxane diamine and doubling the amino group equivalent.
- a predetermined amount of polysiloxane diamine as a sample is collected and placed in a beaker, and this is dissolved in a predetermined amount of a 1: 1 mixed solution of isopropyl alcohol (hereinafter referred to as IPA) and toluene, and this solution is stirred.
- IPA isopropyl alcohol
- the 0.1N hydrochloric acid aqueous solution was dropped while the amino group equivalent was calculated from the amount of the 0.1N hydrochloric acid aqueous solution dropped when the neutralization point was reached.
- a value obtained by doubling this amino group equivalent is the average molecular weight.
- the molecular weight is calculated from the chemical structural formula, and the relation between the numerical value of n and the molecular weight is obtained as a relational expression of a linear function. Can do.
- the average molecular weight can be obtained by applying the average molecular weight to this relational expression.
- polysiloxane diamine represented by the general formula (1) may be a mixture having a plurality of n instead of a single n, n in the present invention represents an average value.
- polysiloxane diamine represented by the general formula (1) examples include ⁇ , ⁇ -bis (3-aminopropyl) polydimethylsiloxane, ⁇ , ⁇ -bis (3-aminopropyl) polydiethylsiloxane, ⁇ , ⁇ , ⁇ -bis (3-aminopropyl) polydipropylsiloxane, ⁇ , ⁇ -bis (3-aminopropyl) polydibutylsiloxane, ⁇ , ⁇ -bis (3-aminopropyl) polydiphenoxysiloxane, ⁇ , ⁇ -bis (2 -Aminoethyl) polydimethylsiloxane, ⁇ , ⁇ -bis (2-aminoethyl) polydiphenoxysiloxane, ⁇ , ⁇ -bis (4-aminobutyl) polydimethylsiloxane, ⁇ , ⁇ -bis (4-aminobutyl) polydi
- the polyimide constituting the polyimide copolymer and polyimide mixed resin of the present invention may have an aromatic diamine residue or an alicyclic diamine residue.
- the aromatic diamine residue or the alicyclic diamine residue is preferably 0.1 mol% or more and 40 mol% or less in the total diamine residues.
- aromatic diamine residues or cycloaliphatic diamines include 2,5-diaminophenol, 3,5-diaminophenol, 3,3′-dihydroxybenzidine, 4,4′-dihydroxy-3,3 ′.
- -Diaminophenylpropane 4,4'-dihydroxy-3,3'-diaminophenylhexafluoropropane, 4,4'-dihydroxy-3,3'-diaminophenylsulfone, 4,4'-dihydroxy-3,3 ' -Diaminophenyl ether, 3,3'-dihydroxy-4,4'-diaminophenyl ether, 4,4'-dihydroxy-3,3'-diaminophenylpropanemethane, 4,4'-dihydroxy-3,3'- Diaminobenzophenone, 1,3-bis (4-amino-3-hydroxyphenyl) benzene, 1,3-bis (3-amino-4-hydroxypheny
- aromatic diamines and alicyclic diamines aromatic diamines having a highly flexible structure are preferable, and specifically, 1,3-bis (3-aminophenoxy) benzene, 3,3′-diaminodiphenyl. Sulfone, 4,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, and 3,3′-diaminobenzophenone are particularly preferred.
- aromatic diamines and alicyclic diamines it is preferable to contain an aromatic diamine represented by the general formula (4).
- aromatic diamine represented by the general formula (4) the compatibility of the inorganic particles and the polyimide copolymer or the polyimide mixed resin, which will be described later, is improved, and the precipitation of the inorganic particles can be suppressed.
- R 17 and R 18 may be the same as or different from each other, and may be an alkyl group having 1 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a fluoroalkyl group having 1 to 30 carbon atoms, a hydroxyl group, a halogen, or a carboxyl group.
- Halogen here means fluorine, chlorine, bromine and iodine.
- the content of the aromatic diamine represented by the general formula (4) is preferably 0.1 mol% or more and 40 mol% or less, more preferably 0.1 mol% or more and 30 mol% or less in all diamine residues. is there.
- the polyimide constituting the polyimide copolymer and polyimide mixed resin of the present invention preferably contains an aromatic tetracarboxylic dianhydride residue as an acid dianhydride residue.
- aromatic tetracarboxylic dianhydride include pyromellitic dianhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2′dimethyl-3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 5,5′dimethyl-3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,3,3 ′, 4′-biphenyltetracarboxylic Acid dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3,3 ′, 4,4′-diphenyl ether tetracarboxylic dianhydride, 2,3,
- the residual of tetracarboxylic dianhydride having an aliphatic ring is not added to the polyimide constituting the polyimide copolymer and the polyimide mixed resin to such an extent that the heat resistance of the polyimide copolymer and the polyimide mixed resin is not impaired.
- Groups can be included.
- tetracarboxylic dianhydride having an aliphatic ring examples include 2,3,5-tricarboxycyclopentylacetic acid dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2 1,3,4-cyclopentanetetracarboxylic dianhydride, 1,2,3,5-cyclopentanetetracarboxylic dianhydride, 1,2,4,5-bicyclohexene tetracarboxylic dianhydride, 2,4,5-cyclohexanetetracarboxylic dianhydride, 1,3,3a, 4,5,9b-hexahydro-5- (tetrahydro-2,5-dioxo-3-furanyl) -naphtho [1,2- C] furan-1,3-dione.
- the said tetracarboxylic dianhydride may be individual and may use 2 or more types.
- Adjustment of the molecular weight of the polyimide composing the polyimide copolymer and the polyimide mixed resin of the present invention can be performed by making the tetracarboxylic acid component and the diamine component used in the synthesis equimolar, or by making either excessive. .
- Either the tetracarboxylic acid component or the diamine component can be excessive, and the polymer chain terminal can be sealed with a terminal blocking agent such as an acid component or an amine component.
- a dicarboxylic acid or an anhydride thereof is preferably used as the terminal blocking agent for the acid component, and a monoamine is preferably used as the terminal blocking agent for the amine component.
- the acid equivalent of the tetracarboxylic acid component including the end-capping agent of the acid component or the amine component and the amine equivalent of the diamine component are equimolar.
- dicarboxylic acid such as benzoic acid, phthalic anhydride, tetrachlorophthalic anhydride, aniline or its anhydride, monoamine is terminated. You may add as a sealing agent.
- the molar ratio of the tetracarboxylic acid component / diamine component of the polyimide copolymer and polyimide mixed resin can be appropriately adjusted so that the viscosity of the resin composition is in a range that can be easily used in coating or the like.
- the molar ratio of the tetracarboxylic acid component / diamine component is generally adjusted within the range of 100/100 to 100/95, or 100/100 to 95/100.
- the molecular weight of the resin decreases, the mechanical strength of the formed film tends to be low, and the adhesive strength tends to be weak. Therefore, it is preferable to adjust the molar ratio within a range where the adhesive strength does not weaken. .
- the method for polymerizing the polyimide constituting the polyimide copolymer and the polyimide mixed resin of the present invention is not particularly limited.
- polyamic acid which is a polyimide precursor
- tetracarboxylic dianhydride and diamine are stirred in an organic solvent at 0 to 100 ° C. for 1 to 100 hours to obtain a polyamic acid resin solution.
- the polyimide resin becomes soluble in an organic solvent, after the polyamic acid is polymerized, the temperature is raised as it is to 120 to 300 ° C. and stirred for 1 to 100 hours to convert it into polyimide to obtain a polyimide resin solution.
- toluene, o-xylene, m-xylene, p-xylene, or the like may be added to the reaction solution, and water generated in the imidization reaction may be removed by azeotropy with these solvents.
- the present invention also provides (a) a resin (excluding a siloxane polymer represented by the general formula (2)), (b-1) a siloxane polymer represented by the general formula (2), and (b- 2) An adhesive for temporary attachment, which is a resin composition containing at least one of the compounds represented by the general formula (3).
- the type of the resin (excluding the siloxane polymer including the structure represented by the general formula (2)) is not particularly limited, and any resin can be used for electronic materials in general. But you can. By containing at least one of (b-1) the siloxane polymer represented by the general formula (2) and (b-2) the compound represented by the general formula (3) as described later, This is because improvement can be achieved.
- (A) As a resin for example, polyimide resin, acrylic resin, acrylonitrile resin, butadiene resin, urethane resin, polyester resin, polyamide resin, polyamideimide resin, epoxy resin, phenol resin, silicone Examples thereof include, but are not limited to, polymer resins such as alicyclic resins and alicyclic resins. Moreover, it may be individual and may combine two or more types.
- the glass transition temperature of the resin is preferably 100 ° C. or lower. When the glass transition temperature is 100 ° C. or lower, good adhesiveness can be exhibited when a substrate serving as an adherend is thermocompression bonded to the adhesive layer of the temporary sticking adhesive of the present invention.
- the 1% weight loss temperature of the resin is preferably 300 ° C. or higher, more preferably 350 ° C. or higher.
- the 1% weight loss temperature of the present invention can be measured using a thermogravimetric analyzer (TGA). The measurement method will be specifically described. A predetermined amount of resin is charged into TGA and held at 60 ° C. for 30 minutes to remove moisture absorbed by the resin. Next, the temperature is raised to 500 ° C. at 5 ° C./min. The temperature at which the weight was reduced by 1% from the obtained weight reduction curve was defined as a 1% weight reduction temperature.
- the (a) resin of the present invention is preferably a polyimide resin.
- a polyimide resin it can be easily achieved that the glass transition temperature is 100 ° C. or lower and the 1% weight loss temperature is 300 ° C. or higher.
- the polyimide resin has at least an acid dianhydride residue and a diamine residue, and the diamine residue contains a polysiloxane diamine residue represented by the general formula (5). Is preferred.
- the average molecular weight of the polysiloxane diamine can be determined by calculating the amino group equivalent by neutralizing titration of the amino group of the polysiloxane diamine and doubling the amino group equivalent.
- a predetermined amount of polysiloxane diamine as a sample is collected and placed in a beaker, and this is dissolved in a predetermined amount of a 1: 1 mixed solution of isopropyl alcohol (hereinafter referred to as IPA) and toluene, and this solution is stirred.
- IPA isopropyl alcohol
- the 0.1N hydrochloric acid aqueous solution was dropped while the amino group equivalent was calculated from the amount of the 0.1N hydrochloric acid aqueous solution dropped when the neutralization point was reached. A value obtained by doubling this amino group equivalent is the average molecular weight.
- the molecular weight is calculated from the chemical structural formula, and the relation between the numerical value of n and the molecular weight is obtained as a relational expression of a linear function. Can do.
- the average molecular weight can be obtained by applying the average molecular weight to this relational expression.
- polysiloxane diamine represented by the general formula (5) may be a mixture having a plurality of n instead of a single L, L in the present invention represents an average value.
- polysiloxane diamine represented by the general formula (5) include ⁇ , ⁇ -bis (3-aminopropyl) polydimethylsiloxane, ⁇ , ⁇ -bis (3-aminopropyl) polydiethylsiloxane, ⁇ , ⁇ , ⁇ -bis (3-aminopropyl) polydipropylsiloxane, ⁇ , ⁇ -bis (3-aminopropyl) polydibutylsiloxane, ⁇ , ⁇ -bis (3-aminopropyl) polydiphenoxysiloxane, ⁇ , ⁇ -bis (2 -Aminoethyl) polydimethylsiloxane, ⁇ , ⁇ -bis (2-aminoethyl) polydiphenoxysiloxane, ⁇ , ⁇ -bis (4-aminobutyl) polydimethylsiloxane, ⁇ , ⁇ -bis (4-aminobutyl) polydi
- the polysiloxane diamine may be used alone or in combination of two or more.
- a polysiloxane diamine in which n is 2 or more is preferable, and the glass transition temperature of the resin can be lowered.
- the glass transition temperature of the resin is preferably 100 ° C. or lower, and can exhibit good adhesion when thermocompression bonded.
- the residue of the polysiloxane diamine represented by the general formula (5) is preferably 30 mol% or more, more preferably 40 mol% or more in the total diamine residues. By being in this range, it becomes possible to greatly reduce the glass transition temperature of the resin.
- the polyimide resin may have an aromatic diamine residue or an alicyclic diamine residue.
- the residue of aromatic diamine or alicyclic diamine is preferably 0.1 mol% or more and 70 mol% or less, more preferably 0.1 mol% or more and 60 mol% or less in the total diamine residues. is there.
- aromatic diamine or alicyclic diamine examples include 2,5-diaminophenol, 3,5-diaminophenol, 3,3′-dihydroxybenzidine, 4,4′-dihydroxy-3,3′-diaminophenyl.
- aromatic diamines and alicyclic diamines aromatic diamines having a highly flexible structure are preferable, and specifically, 1,3-bis (3-aminophenoxy) benzene, 3,3′-diaminodiphenyl. Particularly preferred are sulfone, 4,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, and 3,3′-diaminobenzophenone.
- aromatic diamines and alicyclic diamines it is preferable to contain an aromatic diamine represented by the general formula (4).
- aromatic diamine represented by the general formula (4) the compatibility of the inorganic particles and the polyimide copolymer or the polyimide mixed resin, which will be described later, is improved, and the precipitation of the inorganic particles can be suppressed.
- R 17 and R 18 may be the same as or different from each other, and may be an alkyl group having 1 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a fluoroalkyl group having 1 to 30 carbon atoms, a hydroxyl group, a halogen, or a carboxyl group.
- Halogen here means fluorine, chlorine, bromine and iodine.
- the content of the aromatic diamine represented by the general formula (4) is preferably 0.1 mol% or more and 40 mol% or less, more preferably 0.1 mol% or more and 30 mol% or less in all diamine residues. is there.
- the polyimide resin preferably contains an aromatic tetracarboxylic dianhydride residue as an acid dianhydride residue.
- an aromatic tetracarboxylic dianhydride residue as an acid dianhydride residue.
- aromatic tetracarboxylic dianhydride examples include pyromellitic dianhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2′dimethyl-3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 5,5′dimethyl-3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,3,3 ′, 4′-biphenyltetracarboxylic Acid dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3,3 ′, 4,4′-diphenyl ether tetracarboxylic dianhydride, 2,3,3 ′, 4 ′ -Diphenyl ether tetracarboxylic dianhydride, 2,2 ', 3,3'-diphenyl ether tetracarboxylic
- a tetracarboxylic dianhydride having an aliphatic ring can be contained to such an extent that the heat resistance of the polyimide resin is not impaired.
- Specific examples of the tetracarboxylic dianhydride having an aliphatic ring include 2,3,5-tricarboxycyclopentylacetic acid dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2 , 3,4-cyclopentanetetracarboxylic dianhydride, 1,2,3,5-cyclopentanetetracarboxylic dianhydride, 1,2,4,5-bicyclohexene tetracarboxylic dianhydride, 1, 2,4,5-cyclohexanetetracarboxylic dianhydride, 1,3,3a, 4,5,9b-hexahydro-5- (tetrahydro-2,5-dioxo-3-furanyl) -naphtho [1,2- C] furan
- the molecular weight of the polyimide resin can be adjusted by making the tetracarboxylic acid component and the diamine component used in the synthesis equimolar, or by making one excessive. Either the tetracarboxylic acid component or the diamine component can be excessive, and the polymer chain terminal can be sealed with a terminal blocking agent such as an acid component or an amine component.
- a dicarboxylic acid or an anhydride thereof is preferably used as the terminal blocking agent for the acid component, and a monoamine is preferably used as the terminal blocking agent for the amine component.
- the acid equivalent of the tetracarboxylic acid component including the end-capping agent of the acid component or the amine component and the amine equivalent of the diamine component are equimolar.
- dicarboxylic acid such as benzoic acid, phthalic anhydride, tetrachlorophthalic anhydride, aniline or its anhydride, monoamine is terminated. You may add as a sealing agent.
- the molar ratio of the tetracarboxylic acid component / diamine component of the polyimide resin can be adjusted as appropriate so that the viscosity of the resin composition is in a range that can be easily used in coating, etc., 100/100 to 100/95, Alternatively, the molar ratio of the tetracarboxylic acid component / diamine component is generally adjusted in the range of 100/100 to 95/100.
- the molecular weight of the resin decreases, the mechanical strength of the formed film tends to be low, and the adhesive strength tends to be weak. Therefore, it is preferable to adjust the molar ratio within a range where the adhesive strength does not weaken. .
- the method for polymerizing the polyimide resin is not particularly limited.
- polyamic acid which is a polyimide precursor
- tetracarboxylic dianhydride and diamine are stirred in an organic solvent at 0 to 100 ° C. for 1 to 100 hours to obtain a polyamic acid resin solution.
- the polyimide resin becomes soluble in an organic solvent, after the polyamic acid is polymerized, the temperature is raised as it is to 120 to 300 ° C. and stirred for 1 to 100 hours to convert it into polyimide to obtain a polyimide resin solution.
- toluene, o-xylene, m-xylene, p-xylene, or the like may be added to the reaction solution, and water generated in the imidization reaction may be removed by azeotropy with these solvents.
- the polyimide resin may be either polyimide or polyamic acid which is a precursor of the polyimide. Further, it may be a polyimide precursor partially ring-closed and imidized.
- R 7 and R 8 may be the same or different and each represents a monovalent organic group having 0 to 3 nitrogen atoms.
- R 9 and R 10 are These may be the same or different and each represents an alkylene group or a phenylene group having 1 to 30 carbon atoms, and R 11 to R 14 may be the same or different and each represents an alkyl group having 1 to 30 carbon atoms, Represents an alkylene group having 1 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a phenyl group or a phenoxy group.)
- the alkoxy group having 1 to 30 carbon atoms does not include a polyoxyalkylene structure.
- R 7 and R 8 may be the same or different and each represents a monovalent organic group having 1 to 30 carbon atoms and 0 to 3 nitrogen atoms.
- R 7 and R 8 may be the same or different and each represents a monovalent organic group having 1 to 30 carbon atoms and 0 to 3 nitrogen atoms.
- having an alkyl group, alkylene group, alkoxy group, phenyl group, phenoxy group, amino group, carboxyl group, hydroxyl group, epoxy group, oxetane group, ether group, aralkyl group, amide group, imide group, nitro group, ester group A structure or the like can be used.
- m is an integer of 10 to 100.
- a siloxane polymer having m of 10 or more and 100 or less the adhesiveness of the surface of the adhesive layer obtained by applying to the wafer and drying can be lowered, so that the semiconductor circuit forming substrate and the support substrate are bonded. Then, it can be peeled off by applying mechanical force under mild conditions at room temperature. Moreover, it can also peel
- the heat resistance of the surface of the adhesive layer is improved by containing a siloxane polymer having m of 10 or more and 100 or less, and the adhesive layer is used in the element processing step after bonding the semiconductor circuit forming substrate and the support substrate.
- the generation of voids can be suppressed.
- R 7 and R 8 are preferably structures having an aromatic ring or an aromatic heterocyclic structure. Since R 7 and R 8 have a structure having an aromatic ring or an aromatic heterocyclic structure, voids are generated in the adhesive layer during the element processing step after bonding the semiconductor circuit forming substrate and the support substrate. This can be further suppressed. Specific examples of R 7 and R 8 include, but are not limited to, the following structures.
- the content of the siloxane polymer represented by the general formula (2) is preferably 0.01 to 30% by weight based on (a) the resin. More preferably, it is 0.1 weight% or more and 15 weight% or less. When the content is 0.01% by weight, the peelability and heat resistance are improved, and when the content is 30% by weight or less, the adhesiveness between the adhesive layer and the support substrate can be maintained.
- the (b-1) siloxane polymer represented by the general formula (2) may be added at the time of (a) polymerization of the resin or may be added after the polymerization.
- R 15 represents a monovalent organic group having 2 to 20 carbon atoms and 1 to 3 carbon atoms
- R 16 represents hydrogen, an alkyl group having 1 to 20 carbon atoms, or an aromatic group. Represents an integer of 4.
- B-2 By containing the compound represented by the general formula (3), the adhesiveness between the adhesive layer and the supporting substrate can be increased, so that the heat resistance is improved, and the semiconductor circuit forming substrate and the supporting substrate are improved. It is possible to suppress the generation of voids in the adhesive layer during the element processing step after bonding.
- R 15 represents a monovalent organic group having 2 to 20 carbon atoms and 1 to 3 nitrogen atoms.
- a structure having an amino group, an isocyanate group, or a ureido group can be used.
- the following structure is mentioned as a specific example of a compound represented by General formula (3), It is not limited to these.
- R 15 is preferably a structure having an aromatic ring or an aromatic heterocyclic structure.
- R 15 is mentioned as a preferable specific example of a compound represented by General formula (3), It is not limited to these.
- the content of the compound represented by the general formula (3) is preferably 0.01 to 30% by weight based on the resin (a). More preferably, it is 0.1 weight% or more and 15 weight% or less. 0.1% by weight has the effect of further suppressing the generation of voids, and 15% by weight or less suppresses the increase in fluidity of the adhesive layer. As a result, adhesion during the element processing step is suppressed. Generation of voids in the agent layer can be further suppressed.
- the compound represented by (b-2) the general formula (3) may be added during the polymerization of the (a) resin, or may be added after the polymerization.
- the temporary sticking adhesive of the present invention may contain a solvent.
- a solvent for example, polar aprotic solvents such as N-methyl-2-pyrrolidone, ⁇ -butyrolactone, N, N-dimethylformamide, N, N-dimethylacetamide, dimethylsulfoxide, ethers such as tetrahydrofuran, dioxane, propylene glycol monomethyl ether , Solvents such as acetone, methyl ethyl ketone, diisobutyl ketone, etc., esters such as ethyl acetate, propylene glycol monomethyl ether acetate, ethyl lactate, aromatic hydrocarbons such as toluene, xylene, etc. can do.
- polar aprotic solvents such as N-methyl-2-pyrrolidone, ⁇ -butyrolactone, N, N-dimethylformamide, N, N-dimethylacetamide, di
- the SP value of the solvent contained in the temporary sticking adhesive of the present invention is preferably 7.5 to 9.0. More preferably, it is 7.5 to 8.0.
- the polyimide resin is used as the polyimide copolymer, polyimide mixed resin, or (a) resin, it contains a low-polar polysiloxane diamine residue and a residue containing a high-polar imide group and an aromatic group. Therefore, the storage stability is poor and the resin composition tends to undergo layer separation.
- a solvent having an SP value of 7.5 to 9.0 is contained, layer separation of the resin composition does not occur, and good storage stability can be exhibited.
- Examples of the solvent having an SP value of 7.5 to 9.0 include methyl acetate (SP value; 8.8), ethyl acetate (SP value; 8.7), 3-methoxybutyl acetate (SP value; 8.7). ), Diethylene glycol methyl ethyl ether (SP value; 8.2), diethylene glycol dimethyl ether (SP value; 8.1), dipropylene glycol methyl ether acetate (SP value; 8.7), methyl ethyl ketone (SP value; 9.0) , Dipropylene glycol dimethyl ether (SP value; 7.8), dipropylene glycol methyl-n-propyl ether (SP value; 8.0), and the like. These may be used alone or in combination of two or more.
- the SP value calculated from the estimation method proposed by Fedors is used.
- the total cohesive energy and the total molar molecular capacity of the whole substance are calculated from the cohesive energy and molar molecular volume of the structural unit of the substance, and the square root of the value obtained by dividing the total cohesive energy by the total molar molecular volume is used as the SP value.
- the solvent represented by the general formula (6) is preferable from the viewpoint of solubility of the polyimide copolymer, polyimide mixed resin, or sometimes (a) polyimide resin used for the resin.
- R 25 and R 26 each independently represent hydrogen, an alkyl group having 1 to 12 carbon atoms, an acetyl group, or an aromatic group.
- R 27 represents hydrogen or a methyl group.
- B represents 0, 1 or 2;
- c is an integer of 1 to 3.
- Specific examples of the solvent represented by the general formula (6) include propylene glycol mono-t-butyl ether, ethylene glycol mono-t-butyl ether, propylene glycol mono-n-butyl ether, propylene glycol monopropyl ether, propylene glycol monoethyl Ether, ethylene glycol mono-n-butyl ether, ethylene glycol monopropyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, dipropylene glycol dipropyl ether, dipropylene glycol di-n-butyl ether, dipropylene glycol di-t- Butyl ether, dipropylene glycol
- the solvent contained in the temporary sticking adhesive of the present invention is more preferably a solvent represented by the general formula (6) and having an SP value of 7.5 to 9.0.
- a solvent represented by the general formula (6) for example, dipropylene glycol dimethyl ether (SP value; 7.8), dipropylene glycol methyl-n-propyl ether (SP value; 8.0), diethylene glycol methyl ethyl ether (SP value; 8.2), diethylene glycol dimethyl ether (SP Value; 8.1) and the like. More preferred are dipropylene glycol dimethyl ether (SP value; 7.8) having an SP value of 7.5 to 8.0, and dipropylene glycol methyl-n-propyl ether (SP value; 8.0).
- amide polar solvents such as N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, 1,3-dimethyl-2-imidazoline, ⁇ -propiolactone, ⁇ - Lactone polar solvents such as butyrolactone, ⁇ -valerolactone, ⁇ -valerolactone, ⁇ -caprolactone, and ⁇ -caprolactone, and other examples include, but are not limited to, ethyl lactate.
- the organic solvent used as the polymerization solvent can be used as a solvent contained in the temporary sticking adhesive without being removed from the polymerization solution.
- the temporary sticking adhesive of the present invention preferably contains inorganic fine particles.
- the inorganic fine particles include silica, alumina, titanium oxide, quartz powder, magnesium carbonate, potassium carbonate, barium sulfate, mica, talc and the like.
- the inorganic fine particles may be added at the time of polymerization of the polyimide copolymer, polyimide mixed resin, or (a) resin, or may be added after polymerization.
- the content of the inorganic particles is preferably 0.1% by weight or more and 40% by weight or less based on the polyimide copolymer, polyimide mixed resin, or (a) resin. More preferably, it is 0.1 to 20% by weight.
- the polyimide copolymer, polyimide mixed resin, or (a) the polyimide resin used for the resin is a polyamic acid resin
- a substrate such as a wafer or glass
- heat treatment And converted to polyimide.
- the conversion from polyimide precursor to polyimide requires a temperature of 240 ° C. or higher.
- imidization catalyst in the temporary sticking adhesive, imidization at a lower temperature and in a shorter time becomes possible.
- the imidization catalyst include pyridine, trimethylpyridine, ⁇ -picoline, quinoline, isoquinoline, imidazole, 2-methylimidazole, 1,2-dimethylimidazole, 2-phenylimidazole, 2,6-lutidine, triethylamine, m -Hydroxybenzoic acid, 2,4-dihydroxybenzoic acid, p-hydroxyphenylacetic acid, 4-hydroxyphenylpropionic acid, p-phenolsulfonic acid, p-aminophenol, p-aminobenzoic acid, and the like. It is not limited.
- the content of the imidization catalyst is preferably 3% by weight or more, more preferably 5% by weight or more with respect to 100% by weight of the polyimide copolymer, polyimide mixed resin, or polyimide resin.
- the content of the imidization catalyst is preferably 3% by weight or more, more preferably 5% by weight or more with respect to 100% by weight of the polyimide copolymer, polyimide mixed resin, or polyimide resin.
- 3% by weight or more of the imidization catalyst imidization can be completed even by a lower temperature heat treatment. Further, it is preferably 10% by weight or less, more preferably 8% by weight or less.
- the imidation catalyst may be added during polymerization of the polyimide copolymer, polyimide mixed resin, or (a) resin, or may be added after polymerization.
- resins can be added to the temporary sticking adhesive of the present invention as long as the effects of the present invention are not impaired.
- a surfactant, a silane coupling agent, or the like may be added for the purpose of improving properties such as adhesiveness, heat resistance, coating property, and storage stability.
- Other resins, surfactants, and silane coupling agents may be added during polymerization of the polyimide copolymer, polyimide mixed resin, or (a) resin, or may be added after polymerization.
- the temporary sticking adhesive of the present invention can be used for manufacturing semiconductor devices. Specifically, it can be used for manufacturing a semiconductor device including a step of reducing the thickness of the semiconductor circuit formation substrate to 1 ⁇ m or more and 100 ⁇ m or less. For example, in order to achieve high integration and high density of a semiconductor device, there is a manufacturing of a semiconductor device in which semiconductor chips are stacked while being connected by a through silicon via (TSV). A silicon substrate is generally used as the semiconductor circuit formation substrate.
- TSV through silicon via
- a semiconductor circuit forming substrate is bonded to a supporting substrate such as a silicon substrate or a glass substrate using a temporary bonding adhesive to obtain a wafer processed body.
- the wafer processing body is thinned by polishing the non-circuit forming surface (back surface) of the semiconductor circuit forming substrate, and then the semiconductor circuit forming substrate is device processed. Thereafter, the semiconductor circuit formation substrate is peeled from the support substrate.
- the adhesive for temporary attachment of this invention can be used conveniently as an adhesive agent in manufacture of the semiconductor device containing any one of the said process.
- Examples of the method for applying the adhesive for temporary attachment to the support substrate include a spin coater, a roll coater, screen printing, and a slit die coater.
- Adhesive with good adhesion and heat resistance by applying heat treatment continuously or intermittently at 180-450 ° C for 1 hour to 3 hours after applying the temporary adhesive for adhesion and drying at 100-150 ° C A layer can be obtained.
- a temporary adhesive adhesive coating film on a silicon substrate or glass substrate as a support substrate May be transferred and laminated.
- a heat treatment is further performed at 180 to 450 ° C. for 1 to 3 hours, whereby an adhesive layer having good adhesion and heat resistance can be obtained.
- the temporary bonding adhesive is applied to the support substrate and laminated, but also the temporary adhesion adhesive may be applied to the semiconductor circuit forming substrate and laminated.
- a laminated film may be used to transfer and laminate a temporary sticking adhesive coating film.
- the layer which consists of another resin composition may exist in the support substrate side or the semiconductor circuit formation board
- Examples of the method for peeling the semiconductor circuit forming substrate include a thermal slide peeling method, a laser irradiation peeling method, a mechanical peeling method at room temperature, and a solvent peeling method at room temperature.
- the adhesive for temporary attachment of the present invention can be suitably used in a mechanical peeling method at room temperature or a solvent peeling method at room temperature.
- the mechanical peeling method at room temperature is a method in which the semiconductor circuit forming substrate is gradually mechanically peeled off from the edge of the substrate at room temperature.
- the solvent peeling method at room temperature is a method in which a hole for passing a solvent is formed in a support substrate, and an adhesive film is dissolved with a solvent to peel off.
- a polyimide copolymer, a polyimide mixed resin, or (a) a polyimide resin is used as the resin, it is preferable to use a rework solvent described later as the solvent used in the solvent peeling method.
- a step of reworking the adhesive layer remaining on the semiconductor circuit formation substrate or the support substrate or the residue of the adhesive layer with an organic solvent, an alkaline aqueous solution or the like may be included.
- polyimide resin is used as the polyimide copolymer, polyimide mixed resin, or (a) resin, as a rework solvent, (A) an amine solvent, and (B) a solvent represented by the general formula (6) It is preferable to use a rework solvent containing
- R 25 and R 26 each independently represent hydrogen, an alkyl group having 1 to 12 carbon atoms, an acetyl group, or an aromatic group.
- R 27 represents hydrogen or a methyl group.
- B represents 0, 1 or 2;
- c is an integer of 1 to 3.
- the amine-based solvent has an effect of opening the imide group to facilitate dissolution in the rework solvent, and the cleaning time can be shortened.
- an amine solvent containing a primary amine or a secondary amine is preferable. Specifically, monomethanolamine, dimethanolamine, monoethanolamine, dimethanolamine, dimethylamine, monopropanolamine.
- the rework solvent preferably contains (B) a solvent represented by the general formula (6), specifically propylene.
- a solvent represented by the general formula (6) and having an SP value of 7.5 to 9.0 is more preferable.
- dipropylene glycol dimethyl ether SP value; 7.8
- dipropylene glycol methyl-n-propyl ether SP value; 8.0
- diethylene glycol methyl ethyl ether SP value; 8.2
- diethylene glycol dimethyl ether SP Value; 8.1
- More preferred are dipropylene glycol dimethyl ether (SP value; 7.8) having an SP value of 7.5 to 8.0, and dipropylene glycol methyl-n-propyl ether (SP value; 8.0).
- the reworking solvent used in the present invention preferably contains an amide polar solvent in addition to (A) and (B).
- the amide polar solvent has an effect of improving the storage stability of the rework solvent by compatibilizing (A) and (B).
- the amide polar solvent is preferably a polar solvent containing a tertiary amide having excellent storage stability. Specific examples include N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, 1,3-dimethyl-2-imidazoline, but are not limited thereto.
- an aqueous solution such as sodium hydroxide, sodium hydrogen carbonate, potassium hydroxide, tetramethylammonium hydroxide, or an organic solvent such as dimethyl sulfoxide can be contained as necessary.
- the rework solvent can be suitably used as a solvent used in a solvent peeling method at room temperature.
- a hot press machine in which an adhesive layer laminated silicon substrate prepared by the above method was overlaid with a 0.7 mm thick 8-inch non-alkali glass substrate (Corning) and the upper and lower plates were set at 180 ° C., respectively. Then, pressure bonding was performed at a load of 2000 N for 5 minutes to obtain a glass substrate laminated silicon substrate.
- the adhesiveness is “A”, and if not, the adhesiveness is “C”.
- the obtained glass substrate laminated silicon substrate was observed with the naked eye from the glass side, and the presence or absence of voids was evaluated.
- the evaluation criteria are as follows.
- a glass substrate laminated silicon substrate was prepared using a substrate provided with a hole for allowing a solvent to pass through the 8-inch non-alkali glass substrate. Thereafter, the substrate was immersed in the rework solvent obtained in Production Example 47 at 23 ° C. for 10 minutes, and then the substrate was peeled off with bare hands.
- the evaluation criteria for peeling evaluation are as follows.
- A: 1 and 2 were both peeled off.
- Synthesis Examples 2 to 32 Polyamide acid polymerization
- the same procedure as in Production Example 1 was carried out except that the types and amounts of acid dianhydride and diamine were changed as shown in Tables 1 to 4 to obtain 50% by weight polyamic acid solutions (PA2 to PA32).
- the glass transition temperatures and 1% weight loss temperatures of the polyamic acids PA26 to PA32 were measured and measured, and are summarized in Table 4.
- Synthesis Example 33 (Synthesis of (b-1) siloxane compound) After charging and dissolving 1600.0 g (1.0 mol) of APPS3 together with 1896.2 g of DMM in a reaction kettle equipped with a thermometer, dry nitrogen inlet, heating / cooling device with hot water / cooling water, and stirring device Then, 296.2 g (2.0 mol) of phthalic anhydride was added and reacted at room temperature for 1 hour and then at 60 ° C. for 5 hours to obtain a 50 wt% siloxane compound solution ((b-1) -1). .
- Synthesis Examples 34 and 35 Synthesis of (b-1) siloxane compound
- the same operation as in Production Example 1 was carried out except that the types and amounts of the siloxane diamine and phthalic anhydride compound were changed as shown in Table 5, and 50% by weight of the siloxane compound solution ((b-1) -2, ( b-1) -3) was obtained.
- Synthesis Example 36 500 g of hexane is put into a 500 ml flask, and 21.33 g of aminophenyltrimethoxysilane (3-aminophenyltrimethoxysilane and 4-aminophenyltrimethoxysilane are mixed at a weight ratio of 6: 4) is added thereto. 0.1 mol) was added. Then, 10.21 g (0.1 mol) of acetic anhydride was slowly added dropwise and reacted at room temperature for 3 hours. The precipitate was filtered off and dried, and the resulting composite was designated as AcAPMS. The structure of AcAPMS is shown below.
- Production Example 1 Adjustment of adhesive resin composition
- a reaction kettle equipped with a stirrer was charged with 99.99 g of the polyamic acid solution (PA1) obtained in Synthesis Example 1 and 0.01 g of the polyamic acid solution (PA25) obtained in Synthesis Example 25, and stirred at room temperature for 2 hours.
- PA1 polyamic acid solution obtained in Synthesis Example 1
- PA25 polyamic acid solution obtained in Synthesis Example 25
- an adhesive resin composition (PB1) was obtained.
- Production Examples 2 to 9 (adjustment of adhesive resin composition) Except for changing the type and amount of the polyamic acid solution as shown in Table 6, the same operations as in Production Example 1 were carried out to obtain adhesive resin compositions (PB2 to 9).
- Production Example 10 (adjustment of adhesive resin composition) A reactor equipped with a stirrer was charged with 100 g of the polyamic acid solution (PA12) obtained in Synthesis Example 12 and 1.25 g of MEK-ST-40 filler solution, and stirred at room temperature for 2 hours to obtain an adhesive resin. A composition (AH1) was obtained.
- Production Examples 11 to 14 (adjustment of adhesive resin composition) An adhesive resin composition (AH2 to 5) was obtained in the same manner as in Production Example 10 except that the type and amount of the polyamic acid solution were changed as shown in Table 7.
- Production Example 15 Adjustment of adhesive resin composition
- a reaction vessel equipped with a stirrer 200.0 g of the polyamic acid solution (PA1) obtained in Synthesis Example 1, 10.0 g of a 50 wt% solution of APPS5 (solvent: DMM), 5.0 g of AcAPMS obtained in Synthesis Example 33, filler 12.0 g of MEK-ST-40 as a solution was charged together and stirred at room temperature for 2 hours to obtain an adhesive resin composition (AH6).
- PA1 polyamic acid solution obtained in Synthesis Example 1
- APPS5 solvent: DMM
- AcAPMS AcAPMS obtained in Synthesis Example 33
- MEK-ST-40 filler 12.0 g of MEK-ST-40 as a solution was charged together and stirred at room temperature for 2 hours to obtain an adhesive resin composition (AH6).
- Production Examples 16 to 45 (adjustment of adhesive resin composition) Production Example 15 except that the charge amounts of (a) resin, (b-1) compound of general formula (2), (b-2) compound of general formula (3) and MEK-ST-40 were changed as shown in Table 8. The same operation was performed to obtain an adhesive resin composition (AH7 to 36).
- Production Example 46 (Rework solvent adjustment) A reaction kettle equipped with a stirrer was charged with 30 g of monoethanolamine, 30 g of DMM, and 30 g of N-methyl-2-pyrrolidone and stirred at room temperature for 1 hour to obtain a rework solvent.
- Example 1 Spin coater so that the polyamic acid solution (PA3) obtained in Synthesis Example 3 is dried and imidized to 20 ⁇ m on an 8-inch silicon substrate (manufactured by Shin-Etsu Chemical Co., Ltd.) having a thickness of 750 ⁇ m.
- the coating was performed by adjusting the number of revolutions at 120 ° C. for 10 minutes and dried, and then heat-treated at 350 ° C. for 1 hour to completely imidize to obtain an adhesive layer laminated silicon substrate.
- a hot press machine in which an adhesive layer laminated silicon substrate prepared by the above method was overlaid with a 0.7 mm thick 8-inch non-alkali glass substrate (Corning) and the upper and lower plates were set at 180 ° C., respectively. Then, pressure bonding was performed at a load of 2000 N for 5 minutes to obtain a glass substrate laminated silicon substrate. Using the obtained glass substrate laminated silicon substrate, adhesion evaluation, heat resistance evaluation, back gliding evaluation of silicon substrate, peeling evaluation, and rework evaluation were performed, and the results are summarized in Table 9. Moreover, the storage stability of the polyamic acid resin composition was evaluated, and the results are summarized in Table 9.
- Examples 2 to 25 Except having changed the polyamic-acid resin composition as Table 9 and Table 10, operation similar to Example 1 was performed and the glass substrate laminated silicon substrate was obtained.
- the obtained glass substrate laminated silicon substrate was used for adhesion evaluation, heat resistance evaluation, silicon substrate back gliding evaluation, peeling evaluation, and rework evaluation, and the results are summarized in Tables 9 and 10. Moreover, the storage stability of the polyamic acid resin composition was evaluated, and the results are summarized in Tables 9 and 10.
- Comparative Examples 1 to 3 Except that the polyamic acid resin composition was changed as shown in Tables 8 and 9, the same operation as in Example 1 was performed to obtain a glass substrate laminated silicon substrate.
- the obtained glass substrate laminated silicon substrate was used for adhesion evaluation, heat resistance evaluation, silicon substrate back gliding evaluation, peeling evaluation, and rework evaluation, and the results are summarized in Tables 9 and 10. Moreover, the storage stability of the polyamic acid resin composition was evaluated, and the results are summarized in Tables 9 and 10.
- Examples 26-58 Except that the polyamic acid resin composition was changed as shown in Tables 11 to 13, the same operation as in Example 1 was performed to obtain a glass substrate laminated silicon substrate.
- the obtained glass substrate laminated silicon substrate was used for adhesion evaluation, heat resistance evaluation, silicon substrate back gliding evaluation, peeling evaluation, and rework evaluation, and the results are summarized in Tables 11 to 13. Further, the storage stability and the evaluation of sedimentation of inorganic particles of the polyamic acid resin composition were evaluated, and the results are summarized in Tables 11 to 13.
- Comparative Examples 4-6 Except that the polyamic acid resin composition was changed as shown in Tables 11 to 13, the same operation as in Example 1 was performed to obtain a glass substrate laminated silicon substrate.
- the obtained glass substrate laminated silicon substrate was used for adhesion evaluation, heat resistance evaluation, silicon substrate back gliding evaluation, peeling evaluation, and rework evaluation, and the results are summarized in Tables 11 to 13. Further, the storage stability and the evaluation of sedimentation of inorganic particles of the polyamic acid resin composition were evaluated, and the results are summarized in Tables 11 to 13.
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Abstract
Description
また、本発明は、(A2)一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンの残基を含有し一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンの残基を含有しないポリイミドおよび/もしくはその前駆体と、(B2)一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンの残基を含有し一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンの残基を含有しないポリイミドおよび/もしくはその前駆体を含むポリイミド混合樹脂であって、(A2)を40~99.99重量%含有し、(B2)を0.01~60重量%含有するポリイミド混合樹脂であることを特徴とする仮貼り用接着剤である。
また、本発明は、(a)樹脂(一般式(2)で表されるシロキサン重合体を除く)、ならびに、(b-1)一般式(2)で表されるシロキサン重合体および(b-2)一般式(3)で表される化合物のうち少なくともいずれかを含有する樹脂組成物であることを特徴とする仮貼り用接着剤である。
また、本発明は、本発明の仮貼り用接着剤を塗膜形成した接着剤層である。
また、本発明は、少なくとも酸二無水物残基とジアミン残基を有し、ジアミン残基に(A1)一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンの残基および(B1)一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンの残基の両方を含むポリイミド共重合体であって、(A1)の残基を40~99.99モル%含有し、(B1)の残基を0.01~60モル%含有するポリイミド共重合体である。
また、本発明は、(A2)少なくとも酸二無水物残基とジアミン残基を有し、一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンの残基を含有し一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンの残基を含有しないポリイミドおよび/もしくはその前駆体と、(B2)少なくとも酸二無水物残基とジアミン残基を有し、一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンの残基を含有し一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンの残基を含有しないポリイミドおよび/もしくはその前駆体、を含むポリイミド混合樹脂であって、(A2)を40~99.99重量%含有し、(B2)を0.01~60重量%含有するポリイミド混合樹脂である。
また、本発明は、(a)樹脂(一般式(2)で表されるシロキサン重合体を除く)、ならびに、(b-1)一般式(2)で表されるシロキサン重合体および(b-2)一般式(3)で表される化合物のうち少なくともいずれかを含有する樹脂組成物であって、(a)樹脂が少なくとも酸二無水物残基とジアミン残基を有し、ジアミン残基中に一般式(5)で表されるポリシロキサン系ジアミンの残基を含み、一般式(5)で表されるポリシロキサン系ジアミンの残基は、全ジアミン残基中40モル%以上であるポリイミド樹脂である樹脂組成物。
本発明のポリイミド共重合体は、ポリイミドを重合する際にジアミン成分として少なくとも(A1)一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンと、(B1)一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンとを用いて共重合させることにより作成することができる。自然数nの異なる2種類以上のポリシロキサン系ジアミンを含有することで、被着体となる基板上に接着剤層を形成する工程で、接着剤層の表面の接着性を低下することができるため、半導体回路形成基板と支持基板を接着し、その後、室温で温和な条件で機械的に力を加えて剥離することができる。また、後述するリワーク溶剤などを用いて室温の温和な条件で溶解させて剥離することもできる。
本発明のポリイミド混合樹脂は、(A2)一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンの残基を含有し、一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンの残基を含有しないポリイミドおよび/またはその前駆体の重合液または粉体と、(B2)一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンの残基を含有し、一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンの残基を含有しないポリイミドおよび/またはその前駆体の重合液または粉体を混合することで作成することができる。
ポリシロキサン系ジアミンの平均分子量は、ポリシロキサン系ジアミンのアミノ基の中和滴定をすることによりアミノ基当量を算出し、このアミノ基当量を2倍することで求めることができる。例えば、試料となるポリシロキサン系ジアミンを所定量採取してビーカーに入れ、これを所定量のイソプロピルアルコール(以下、IPAとする。)とトルエンの1:1混合溶液に溶解し、この溶液に撹拌しながら0.1N塩酸水溶液を滴下していき、中和点となったときの0.1N塩酸水溶液の滴下量からアミノ基当量を算出することができる。このアミノ基当量を2倍した値が平均分子量である。
(b-2)一般式(3)で表される化合物を含有することで、接着剤層と支持基板の接着性を上げることができるため、耐熱性が向上し、半導体回路形成基板と支持基板を貼り合せた後の素子加工工程中で接着剤層にボイドが発生することを抑制することができる。
一般式(6)で示される溶媒は、具体的には、プロピレングリコールモノ-t-ブチルエーテル、エチレングリコールモノ-t-ブチルエーテル、プロピレングリコールモノ-n-ブチルエーテル、プロピレングリコールモノプロピルエーテル、プロピレングリコールモノエチルエーテル、エチレングリコールモノ-n-ブチルエーテル、エチレングリコールモノプロピルエーテル、ジプロピレングリコールジメチルエーテル、ジプロピレングリコールジエチルエーテル、ジプロピレングリコールジプロピルエーテル、ジプロピレングリコールジ-n-ブチルエーテル、ジプロピレングリコールジ-t-ブチルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールモノエチルエーテル、ジプロピレングリコールモノプロピルエーテル、ジプロピレングリコールモノ-n-ブチルエーテル、トリプロピレングリコールモノメチルエーテル、トリプロピレングリコールモノエチルエーテル、トリプロピレングリコールモノプロピルエーテル、ジエチレングリコールメチルエチルエーテル、ジエチレングリコールジメチルエーテルが挙げられるが、これに限定されない。
(A)アミン系溶媒には、イミド基を開環させリワーク溶剤に溶解しやすくする効果があり、洗浄時間を短縮することができる。イミド基を開環させるには、1級アミン、2級アミンを含むアミン系溶剤が好ましく、具体的にはモノメタノールアミン、ジメタノールアミン、モノエタノールアミン、ジメタノールアミン、ジメチルアミン、モノプロパノールアミン、イソプロパノールアミン、イソプロピルアミン、ジイソプロピルアミン、などが挙げられるが、これに限定されない。より好ましくは1級アミンを含むアミン系溶剤であり、具体的にはモノメタノールアミン、モノエタノールアミン、モノプロパノールアミン、イソプロパノールアミン、イソプロピルアミンなどが挙げられるが、これに限定されない。
下記合成例1および26~32に記載のポリアミド酸樹脂溶液(PA1、PA26~32)を厚さ18μmの電解銅箔の光沢面に厚さ20μmになるようにバーコーターで塗布後、80℃で10分、150℃で10分乾燥し、さらに窒素雰囲気下250℃で10分加熱処理を行って、ポリイミドに変換し、ポリイミド積層銅箔を得た。次に得られたポリイミド積層銅箔の銅箔を塩化第2鉄溶液で全面エッチングし、ポリイミドの単膜を得た。
上記で得られたポリイミドの単膜約15mgをアルミ製標準容器に詰め、熱重量分析装置TGA-50(島津製作所(株)製)を用いて測定した。測定条件は、60℃で30分保持した後、昇温速度5℃/分で500℃まで昇温した。
各製造例で得られたポリアミド酸樹脂溶液を23℃で保存し、液の分離性を肉眼で観察した。評価基準は下記のとおりである。
A:1~2週間の間に分離が生じた
B:1週間以内に分離が生じた
C:3日以内に分離が生じた。
厚さ750μmの8インチシリコンウエハ(信越化学工業(株)社製)上に、各製造例で得られたポリアミド酸樹脂溶液を乾燥、イミド化後の厚みが20μmになるようにスピンコーターで回転数を調整して塗布し、120℃で10分熱処理して乾燥した後、350℃で1時間熱処理して完全にイミド化を行い、接着剤層積層シリコン基板を得た。
B:1cm以下のサイズのボイド有り
C:1cm以上のサイズのボイド有り。
上記で接着性評価をしたガラス基板積層シリコン基板を350℃で2時間熱処理した後、ガラス側から肉眼で観察し、ボイドの有無を評価した。評価基準は下記のとおりである。
B:1cm以下のサイズのボイド有り
C:1cm以上のサイズのボイド有り。
上記で耐熱性評価をしたガラス基板積層シリコン基板をグラインダーDAG810(DISCO製)にセットし、シリコン基板を厚み100μmまで研磨した。グライディング後のシリコン基板を肉眼で観察し、割れ、クラックなどの有無を評価した。
1.室温での機械剥離法
上記でバックグライディングしたガラス基板積層シリコン基板のシリコン基板にダイシングフレームを用いてダイシングテープを貼り、このダイシングテープ面を真空吸着によって吸着盤にセットした後、室温でガラス基板の一点をピンセットで持ち上げることでガラス基板を剥離した。
上記8インチ無アルカリガラス基板に溶剤通過のための穴を設けた基板を用いてガラス基板積層シリコン基板を作成した。その後、製造例47で得たリワーク溶剤に23℃10分間の条件で浸した後、基板を素手で剥離した。
上記で剥離したシリコン基板に付着している接着剤層を製造例46で得たリワーク溶剤で23℃10分間の条件でリワークし、溶解性を肉眼で観察した。評価基準は下記のとおりである。
B:溶解するが、基板上に残渣が残る
C:溶解しない。
製造例10~45で得られたポリアミド酸樹脂溶液を23℃で保存し、無機粒子の沈降有無を肉眼で観察した。評価基準は下記のとおりである。
A:2~4週間の間に沈降が生じた
B:2週間以内に沈降が生じた
C:1週間以内に沈降が生じた。
試料となるポリシロキサン系ジアミン5gをビーカーに採取し、ここに、IPA:トルエンが1:1の混合溶液を50mL入れ溶解した。次に、京都電子工業(株)製の電位差自動測定装置AT-610を用い、0.1N塩酸水溶液を撹拌しながら滴下し、中和点となる滴下量を求めた。得られた0.1N塩酸水溶液の滴下量から下式(7)を用いて平均分子量を算出した。
2×〔10×36.5×(滴下量(g))〕/5=平均分子量 (7)
次に、用いたポリシロキサン系ジアミンがn=1であった場合およびn=10であった場合の分子量を化学構造式から計算し、nの数値と分子量の関係を一次関数の関係式として求めた。この関係式に上記平均分子量をあてはめ、nの平均値を求めた。
ODPA:3,3’,4,4’-ジフェニルエーテルテトラカルボン酸二無水物
PMDA:ピロメリット酸二無水物
BSAA:4,4’-[(イソプロピリデン)ビス(p-フェニレンオキシ)]ジフタル酸二無水物
SiDA:1,1,3,3-テトラメチル-1,3-ビス(3-アミノプロピル)ジシロキサン(分子量:248、式(1)においてn=1)
APPS1:α,ω-ビス(3-アミノプロピル)ポリジメチルシロキサン(平均分子量:400、式(1)においてn=3)
APPS2:α,ω-ビス(3-アミノプロピル)ポリジメチルシロキサン(平均分子量:860、式(1)においてn=9)
APPS3:α,ω-ビス(3-アミノプロピル)ポリジメチルシロキサン(平均分子量:1600、式(1)においてn=19)
APPS4:α,ω-ビス(3-アミノプロピル)ポリジメチルシロキサン(平均分子量:3000、式(1)においてn=37)
APPS5:α,ω-ビス(3-アミノプロピル)ポリジメチルシロキサン(平均分子量:4400、式(1)においてn=57)
44DAE:4,4’-ジアミノジフェニルエーテル
APB:1,3-ビス(3-アミノフェノキシ)ベンゼン
DABS:4,4’-ジヒドロキシ-3,3’-ジアミノフェニルスルホン
FDA:9,9-ビス(3-アミノ-4-ヒドロキシフェニル)フルオレン
BAHF:4,4’-ジヒドロキシ-3,3’-ジアミノフェニルヘキサフルオロプロパン
MEK-ST-40:有機溶剤分散シリカ(溶剤:MEK シリカ:40wt%)(日産化学工業(株)製)
DMM:ジプロピレングリコールジメチルエーテル
DPMNP:ジプロピレングリコールメチル-n-プロピルエーテル
EDM:ジエチレングリコールメチルエチルエーテル
DPM:ジプロピレングリコールメチルエーテル
KBM-1003:ビニルシラン(信越化学工業(株)製)。
温度計、乾燥窒素導入口、温水・冷却水による加熱・冷却装置、および、撹拌装置を付した反応釜に、APPS2 602.0g(0.7mol)、44DAE 60.1g(0.3mol)をDMM 972.3gと共に仕込み、溶解させた後、ODPA 310.2g(1mol)を添加し、室温で1時間、続いて60℃で5時間反応させて、50重量%のポリアミド酸溶液PA1を得た。得られたポリアミド酸のガラス転移温度と1%重量減少温度を測定し、表4にまとめた。
酸二無水物、ジアミンの種類と仕込量を表1~表4のように変えた以外は製造例1と同様の操作を行い、50重量%のポリアミド酸溶液(PA2~PA32)を得た。PA26~PA32のポリアミド酸のガラス転移温度と1%重量減少温度を測定測定し、表4にまとめた。
温度計、乾燥窒素導入口、温水・冷却水による加熱・冷却装置、および、撹拌装置を付した反応釜に、APPS3 1600.0g(1.0mol)をDMM 1896.2gと共に仕込み、溶解させた後、無水フタル酸296.2g(2.0mol)を添加し室温で1時間、続いて60℃で5時間反応させて、50重量%のシロキサン化合物溶液((b-1)-1)を得た。
シロキサンジアミンと無水フタル酸系化合物の種類と仕込量を表5のように変えた以外は製造例1と同様の操作を行い、50重量%のシロキサン化合物溶液((b-1)-2、(b-1)-3)を得た。
500mlのフラスコにヘキサン500gを入れ、これにアミノフェニルトリメトキシシラン(3-アミノフェニルトリメトキシシランと4-アミノフェニルトリメトキシシランが6:4の重量比で混合されているもの)21.33g(0.1mol)を加えた。ついで、無水酢酸10.21g(0.1mol)をゆっくり滴下し、室温で3時間反応させた。沈殿物を濾別して乾燥し、得られた合成物をAcAPMSとした。AcAPMSの構造を下記に示す。
撹拌装置を付した反応釜に、合成例1で得たポリアミド酸溶液(PA1)99.99g、合成例25で得たポリアミド酸溶液(PA25)0.01gを共に仕込み、室温で2時間撹拌して、接着剤樹脂組成物(PB1)を得た。
ポリアミド酸溶液の種類、仕込量を表6のように変えた以外は製造例1と同様の操作を行い、接着剤樹脂組成物(PB2~9)を得た。
撹拌装置を付した反応釜に、合成例12で得たポリアミド酸溶液(PA12)100g、フィラー溶液であるMEK-ST-40 1.25gを共に仕込み、室温で2時間撹拌して、接着剤樹脂組成物(AH1)を得た。
ポリアミド酸溶液の種類、仕込量を表7のように変えた以外は製造例10と同様の操作を行い、接着剤樹脂組成物(AH2~5)を得た。
撹拌装置を付した反応釜に、合成例1で得たポリアミド酸溶液(PA1)200.0g、APPS5の50wt%溶液(溶媒:DMM)10.0g、合成例33で得たAcAPMS5.0g、フィラー溶液であるMEK-ST-40 12.0gを共に仕込み、室温で2時間撹拌して、接着剤樹脂組成物(AH6)を得た。
(a)樹脂、(b-1)一般式(2)化合物、(b-2)一般式(3)化合物、MEK-ST-40の仕込量を表8のように変えた以外は製造例15と同様の操作を行い、接着剤樹脂組成物(AH7~36)を得た。
撹拌装置を付した反応釜に、モノエタノールアミン30g、DMM30g、N-メチル-2-ピロリドン30gを仕込み、室温で1時間撹拌して、リワーク溶剤を得た。
厚さ750μmの8インチシリコン基板(信越化学工業(株)社製)上に、合成例3で得られたポリアミド酸溶液(PA3)を乾燥、イミド化後の厚みが20μmになるようにスピンコーターで回転数を調整して塗布し、120℃で10分熱処理して乾燥した後、350℃で1時間熱処理して完全にイミド化を行い、接着剤層積層シリコン基板を得た。
ポリアミド酸樹脂組成物を表9、表10のごとく変えた以外は、実施例1と同様の操作を行い、ガラス基板積層シリコン基板を得た。
ポリアミド酸樹脂組成物を表8、表9のごとく変えた以外は、実施例1と同様の操作を行い、ガラス基板積層シリコン基板を得た。
ポリアミド酸樹脂組成物を表11~表13のごとく変えた以外は、実施例1と同様の操作を行い、ガラス基板積層シリコン基板を得た。
ポリアミド酸樹脂組成物を表11~表13のごとく変えた以外は、実施例1と同様の操作を行い、ガラス基板積層シリコン基板を得た。
Claims (21)
- 少なくとも酸二無水物残基とジアミン残基を有し、ジアミン残基に(A1)一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンの残基および(B1)一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンの残基の両方を含むポリイミド共重合体であって、(A1)の残基を40~99.99モル%含有し、(B1)の残基を0.01~60モル%含有するポリイミド共重合体であることを特徴とする仮貼り用接着剤。
- (A2)少なくとも酸二無水物残基とジアミン残基を有し、一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンの残基を含有し一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンの残基を含有しないポリイミドおよび/もしくはその前駆体と、(B2)少なくとも酸二無水物残基とジアミン残基を有し、一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンの残基を含有し一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンの残基を含有しないポリイミドおよび/もしくはその前駆体、を含むポリイミド混合樹脂であって、(A2)を40~99.99重量%含有し、(B2)を0.01~60重量%含有するポリイミド混合樹脂であることを特徴とする仮貼り用接着剤。
- (a)樹脂(一般式(2)で表されるシロキサン重合体を除く)、ならびに、(b-1)一般式(2)で表されるシロキサン重合体および(b-2)一般式(3)で表される化合物のうち少なくともいずれかを含有する樹脂組成物であることを特徴とする仮貼り用接着剤。
- (a)樹脂のガラス転移点が100℃以下である請求項3に記載の仮貼り用接着剤。
- (a)樹脂の1%重量減少温度が300℃以上である請求項3または4に記載の仮貼り用接着剤。
- (a)樹脂がポリイミド樹脂である請求項3~5のいずれかに記載の仮貼り用接着剤。
- (b-1)一般式(2)で表されるシロキサン重合体を、(a)樹脂に対して0.01~30重量%含有する請求項3~6のいずれかに記載の仮貼り用接着剤。
- (b-2)一般式(3)で表される化合物を、(a)樹脂に対して0.01~30重量%含有する請求項3~7のいずれかに記載の仮貼り用接着剤。
- さらに(c)溶媒を含有する請求項1~8のいずれかに記載の仮貼り用接着剤。
- 前記(c)溶媒が、SP値が7.5~9.0の溶媒を含有する請求項9に記載の仮貼り用接着剤。
- さらに無機微粒子を含有する請求項1~11のいずれかに記載の仮貼り用接着剤。
- 請求項1~12のいずれかに記載の仮貼り用接着剤を塗膜形成した接着剤層。
- 半導体回路形成基板と支持基板とが少なくとも請求項13に記載の接着剤層を介して接合されたウエハ加工体。
- 半導体回路形成基板と支持基板とが、請求項13に記載の接着剤層を介して接合されたウエハ加工体。
- 請求項14または15に記載のウエハ加工体を用いる半導体装置の製造方法であって、前記半導体回路形成基板を薄く加工する工程、前記ウエハ加工体の前記半導体回路形成基板をデバイス加工する工程、前記ウエハ加工体の前記半導体回路形成基板を支持基板から剥離する工程、および前記ウエハ加工体から剥離した前記半導体回路形成基板または前記ウエハ加工体の前記支持基板に付着した接着剤層を溶剤で洗浄する工程、の少なくともいずれか一つを含むことを特徴とする半導体装置の製造方法。
- 請求項16に記載の半導体回路形成基板を薄く加工する工程が、半導体回路形成基板の厚みを1μm以上100μm以下に加工する工程を含む半導体装置の製造方法。
- 少なくとも酸二無水物残基とジアミン残基を有し、ジアミン残基に(A1)一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンの残基および(B1)一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンの残基の両方を含むポリイミド共重合体であって、(A1)の残基を40~99.99モル%含有し、(B1)の残基を0.01~60モル%含有するポリイミド共重合体。
- (A2)少なくとも酸二無水物残基とジアミン残基を有し、一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンの残基を含有し一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンの残基を含有しないポリイミドおよび/もしくはその前駆体と、(B2)少なくとも酸二無水物残基とジアミン残基を有し、一般式(1)で表されnが16以上100以下の自然数であるポリシロキサン系ジアミンの残基を含有し一般式(1)で表されnが1以上15以下の自然数であるポリシロキサン系ジアミンの残基を含有しないポリイミドおよび/もしくはその前駆体、を含むポリイミド混合樹脂であって、(A2)を40~99.99重量%含有し、(B2)を0.01~60重量%含有するポリイミド混合樹脂。
- (a)樹脂(一般式(2)で表されるシロキサン重合体を除く)、ならびに、(b-1)一般式(2)で表されるシロキサン重合体および(b-2)一般式(3)で表される化合物のうち少なくともいずれかを含有する樹脂組成物であって、(a)樹脂が少なくとも酸二無水物残基とジアミン残基を有し、ジアミン残基中に一般式(5)で表されるポリシロキサン系ジアミンの残基を含み、一般式(5)で表されるポリシロキサン系ジアミンの残基は、全ジアミン残基中40モル%以上であるポリイミド樹脂である樹脂組成物。
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Cited By (9)
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US10080283B1 (en) | 2017-05-08 | 2018-09-18 | International Business Machines Corporation | Interface for limiting substrate damage due to discrete failure |
JP2019529660A (ja) * | 2016-09-28 | 2019-10-17 | ダウ グローバル テクノロジーズ エルエルシー | ポリ(アミド酸)ポリマーおよびポリイミドポリマーの合成のための溶媒系 |
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JP2019529660A (ja) * | 2016-09-28 | 2019-10-17 | ダウ グローバル テクノロジーズ エルエルシー | ポリ(アミド酸)ポリマーおよびポリイミドポリマーの合成のための溶媒系 |
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JP7183840B2 (ja) | 2019-02-07 | 2022-12-06 | 東レ株式会社 | 仮貼り用接着剤組成物およびこれを用いた半導体電子部品の製造方法 |
WO2020189759A1 (ja) * | 2019-03-20 | 2020-09-24 | 株式会社カネカ | ポリアミド酸組成物およびその製造方法、ポリアミド酸溶液、ポリイミド、ポリイミド膜、積層体およびその製造方法、ならびにフレキシブルデバイスおよびその製造方法 |
JP2021025026A (ja) * | 2019-08-08 | 2021-02-22 | 達興材料股▲ふん▼有限公司Daxin Materials Corporation | 仮貼組成物、仮貼膜、複合膜、被加工物の仮貼方法、及び、半導体ウエハーパッケージ |
TWI739715B (zh) * | 2021-02-26 | 2021-09-11 | 新應材股份有限公司 | 聚醯亞胺樹脂組成物、聚醯亞胺樹脂黏著層、積層體、以及電子元件的製造方法 |
WO2023032888A1 (ja) | 2021-09-01 | 2023-03-09 | 東レ株式会社 | 粘着剤、粘着剤付き基板、粘着剤層付き回路基板、積層体、積層体の製造方法、および半導体装置の製造方法 |
WO2023100705A1 (ja) * | 2021-12-01 | 2023-06-08 | 日産化学株式会社 | 剥離性付与剤、接着剤組成物、積層体、及び半導体基板の製造方法 |
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CN110734736B (zh) | 2022-04-19 |
SG11201700692RA (en) | 2017-03-30 |
EP3187559A1 (en) | 2017-07-05 |
JPWO2016021646A1 (ja) | 2017-05-25 |
KR102260081B1 (ko) | 2021-06-03 |
CN106574163B (zh) | 2019-12-03 |
MY193426A (en) | 2022-10-12 |
SG10202000399YA (en) | 2020-03-30 |
EP3187559B1 (en) | 2021-02-17 |
US20170221746A1 (en) | 2017-08-03 |
EP3187559A4 (en) | 2018-07-18 |
KR20170042609A (ko) | 2017-04-19 |
JP2020077876A (ja) | 2020-05-21 |
JP6908088B2 (ja) | 2021-07-21 |
US10941320B2 (en) | 2021-03-09 |
JP6613894B2 (ja) | 2019-12-04 |
US20190080952A1 (en) | 2019-03-14 |
TW201610063A (zh) | 2016-03-16 |
CN110734736A (zh) | 2020-01-31 |
CN106574163A (zh) | 2017-04-19 |
TWI667313B (zh) | 2019-08-01 |
US10177022B2 (en) | 2019-01-08 |
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