JP2013522929A - 3次元集積のための裏側ダミー・プラグを含む半導体構造およびこれを製造する方法 - Google Patents
3次元集積のための裏側ダミー・プラグを含む半導体構造およびこれを製造する方法 Download PDFInfo
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- JP2013522929A JP2013522929A JP2013501235A JP2013501235A JP2013522929A JP 2013522929 A JP2013522929 A JP 2013522929A JP 2013501235 A JP2013501235 A JP 2013501235A JP 2013501235 A JP2013501235 A JP 2013501235A JP 2013522929 A JP2013522929 A JP 2013522929A
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
【解決手段】半導体構造は、基板に埋め込まれた裏側ダミー・プラグを含む。裏側ダミー・プラグは、半導体構造の垂直方向の熱伝導性を高めると共に基板内の基板貫通バイア(TSV)における信号の電気的分離を与える導電構造とすることができる。裏側ダミー・プラグは、基板内の他のコンポーネントにおける体積変化を吸収するための空隙を含むことができ、これによって熱サイクルおよび半導体チップの動作中に基板での機械的応力を低減する。空隙を含む裏側ダミー・プラグは、絶縁材料または導電材料で構成することができる。本発明の構造を用いて、垂直チップ集積を有する3次元構造を形成することができ、ウェハ間熱伝導性の向上、TSVを介した信号間のクロストークの軽減、またはTSVに対する機械的応力の低減、あるいはそれら全てを達成する。
【選択図】図1
Description
Claims (25)
- 半導体層および相互接続誘電層を含み、前記半導体層と前記相互接続誘電層との間の界面に少なくとも1つの半導体デバイスが位置する基板と、
前記基板に埋め込まれ、導電材料を含み、少なくとも前記界面から前記基板の裏側表面まで延在する基板貫通バイア(TSV)構造と、
前記基板に埋め込まれ、前記裏側表面から前記基板内のある深さまで延在し、前記深さが前記裏側表面と前記界面との間の垂直方向の距離よりも小さい、少なくとも1つの裏側ダミー・プラグと、
を含む、半導体構造。 - 前記少なくとも1つの裏側ダミー・プラグが複数の裏側ダミー・プラグである、請求項1に記載の半導体構造。
- 前記深さが、前記裏側表面と前記界面との間の前記垂直方向の距離の10%と90%との間である、請求項1に記載の半導体構造。
- 前記少なくとも1つの裏側ダミー・プラグが導電材料を含む、請求項1に記載の半導体構造。
- 前記導電材料が、元素金属、金属間合金、導電金属窒化物、ドーピングされた半導体材料、およびそれらの組み合わせから選択される、請求項4に記載の半導体構造。
- 前記少なくとも1つの裏側ダミー・プラグに前記導電材料が完全に充填されている、請求項4に記載の半導体構造。
- 前記少なくとも1つの裏側ダミー・プラグの各々が、前記裏側表面から前記基板内まで延在するトレンチを完全に充填し、前記トレンチの水平方向の断面領域が、前記裏側表面からの距離と共に小さくなるか、または前記裏側表面からの距離に関わらず実質的に一定である、請求項6に記載の半導体構造。
- 前記少なくとも1つの裏側ダミー・プラグに前記導電材料が部分的に充填され、前記少なくとも1つの裏側ダミー・プラグの各々が前記導電材料により封入された空隙を含む、請求項4に記載の半導体構造。
- 前記少なくとも1つの裏側ダミー・プラグの各々が、前記裏側表面から前記基板内まで延在するトレンチを部分的に充填し、前記空隙が前記トレンチ内に位置し、前記トレンチの水平方向の断面領域が、前記裏側表面からの距離と共に小さくなるか、または前記裏側表面からの距離に関わらず実質的に一定である、請求項8に記載の半導体構造。
- 前記少なくとも1つの裏側ダミー・プラグの各々が、前記裏側表面から前記基板内まで延在するトレンチを部分的に充填し、前記空隙が前記トレンチ内に位置し、前記裏側表面からある距離における前記トレンチの水平方向の断面領域が、前記裏側表面からもっと短い距離における水平方向の断面領域よりも大きい、請求項8に記載の半導体構造。
- 前記少なくとも1つのプラグが誘電材料を含む、請求項1に記載の半導体構造。
- 前記少なくとも1つの裏側ダミー・プラグに前記誘電材料が部分的に充填され、前記少なくとも1つの裏側ダミー・プラグの各々が前記誘電材料により封入された空隙を含む、請求項11に記載の半導体構造。
- 前記少なくとも1つの裏側ダミー・プラグの各々が、前記裏側表面から前記基板内まで延在するトレンチを部分的に充填し、前記空隙が前記トレンチ内に位置し、前記トレンチの水平方向の断面領域が、前記裏側表面からの距離と共に小さくなるか、または前記裏側表面からの距離に関わらず実質的に一定である、請求項12に記載の半導体構造。
- 前記少なくとも1つの裏側ダミー・プラグの各々が、前記裏側表面から前記基板内まで延在するトレンチを部分的に充填し、前記空隙が前記トレンチ内に位置し、前記裏側表面からある距離における前記トレンチの水平方向の断面領域が、前記裏側表面からもっと短い距離における水平方向の断面領域よりも大きい、請求項12に記載の半導体構造。
- 前記TSV構造が前記基板から電気的に分離され、前記少なくとも1つの裏側ダミー・プラグが、半導体材料層に埋め込まれ、前記半導体材料層のいずれの部分にも電気的に短絡しない、請求項1に記載の半導体構造。
- 前記TSVの端面および前記少なくとも1つの裏側ダミー・プラグの各々の端面が前記基板の前記裏側表面と同一平面である、請求項1に記載の半導体構造。
- 前記基板の前側表面に接合された別の基板を更に含み、前記基板が第1のボンディング・パッドを含み、前記第1のボンディング・パッドが前記基板の前記前側に位置して前記別の基板上に位置する第2のボンディング・パッドに接合し、前記TSV構造が前記第1のボンディング・パッドおよび前記第2のボンディング・パッドに電気的に短絡する、請求項1に記載の半導体構造。
- 半導体構造を形成する方法であって、
基板の前側表面上に少なくとも1つの半導体デバイスを形成することと、
前記基板に基板貫通バイア(TSV)構造を形成することであって、前記TSV構造が導電材料を含み、少なくとも前記基板の前記前側表面から前記基板の裏側表面まで延在する、ことと、
前記基板に少なくとも1つの裏側ダミー・プラグを形成することであって、前記少なくとも1つの裏側ダミー・プラグが前記裏側表面から前記基板内のある深さまで延在し、前記深さが前記基板の前記前側表面と前記基板の前記裏側表面との間の垂直方向の距離よりも小さい、ことと、
を含む、方法。 - 前記基板に少なくとも1つのトレンチを形成し、前記少なくとも1つのトレンチに充填材料を充填することであって、前記充填材料が前記少なくとも1つのトレンチを完全にまたは部分的に充填する、ことと、
前記裏側表面の上から前記充填材料の一部を除去することであって、前記基板における前記充填材料の少なくとも1つの残り部分の各々が前記少なくとも1つの裏側ダミー・プラグを構成する、ことと、
を更に含む、請求項18に記載の方法。 - 前記少なくとも1つのトレンチに前記充填材料を充填する前に前記少なくとも1つのトレンチの各々に誘電ライナを形成することを更に含み、前記充填材料が導電材料であり、前記少なくとも1つの裏側ダミー・プラグが少なくとも1つの導電ダミー・プラグである、請求項19に記載の方法。
- 前記充填材料が誘電材料であり、前記少なくとも1つの裏側ダミー・プラグが空隙を有する少なくとも1つの誘電ダミー・プラグである、請求項19に記載の方法。
- 前記充填材料の前記部分を除去した後、前記TSVの端面および前記少なくとも1つの裏側ダミー・プラグの表面が前記裏側表面と同一平面である、請求項19に記載の方法。
- 前記充填材料が、元素金属、金属間合金、導電金属窒化物、ドーピングされた半導体材料、およびそれらの組み合わせから選択される、請求項19に記載の方法。
- 前記少なくとも1つのトレンチの各々に連続誘電ライナを形成することと、
前記連続誘電ライナの水平方向の部分を除去することであって、前記連続誘電ライナの各残りの垂直方向部分が前記少なくとも1つのトレンチの1つの側壁を覆い、誘電ライナを構成する、ことと、
前記少なくとも1つのトレンチの各々の下表面を介して前記基板の材料をエッチングすることによって、前記少なくとも1つのトレンチの各々の下部を膨張させて少なくとも1つのボトル形トレンチを形成することと、
を更に含む、請求項19に記載の方法。 - 前記基板の前記前側に、前記TSVに電気的に短絡する第1のボンディング・パッドを形成することと、
別の基板上に第2のボンディング・パッドを形成することと、
前記基板および前記別の基板を接合し、これによって前記第1のボンディング・パッドを前記第2のボンディング・パッドに接合することと、
を更に含む、請求項18に記載の方法。
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Also Published As
Publication number | Publication date |
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DE112010005236T5 (de) | 2012-11-15 |
JP5830212B2 (ja) | 2015-12-09 |
GB2492512A (en) | 2013-01-02 |
GB201218896D0 (en) | 2012-12-05 |
US20110233785A1 (en) | 2011-09-29 |
DE112010005236B4 (de) | 2018-05-09 |
WO2011119192A1 (en) | 2011-09-29 |
US8587121B2 (en) | 2013-11-19 |
GB2492512B (en) | 2014-02-05 |
CN102822942B (zh) | 2016-04-06 |
CN102822942A (zh) | 2012-12-12 |
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