JP2012160719A - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP2012160719A JP2012160719A JP2012001777A JP2012001777A JP2012160719A JP 2012160719 A JP2012160719 A JP 2012160719A JP 2012001777 A JP2012001777 A JP 2012001777A JP 2012001777 A JP2012001777 A JP 2012001777A JP 2012160719 A JP2012160719 A JP 2012160719A
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- oxide semiconductor
- film
- transistor
- semiconductor film
- electrode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 388
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 128
- 238000010438 heat treatment Methods 0.000 claims abstract description 65
- 239000001301 oxygen Substances 0.000 claims description 112
- 229910052760 oxygen Inorganic materials 0.000 claims description 112
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 111
- 238000000034 method Methods 0.000 claims description 101
- 230000015572 biosynthetic process Effects 0.000 claims description 47
- 230000001681 protective effect Effects 0.000 claims description 41
- 239000007789 gas Substances 0.000 claims description 40
- 239000013078 crystal Substances 0.000 claims description 38
- 239000001257 hydrogen Substances 0.000 claims description 28
- 229910052739 hydrogen Inorganic materials 0.000 claims description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 27
- 125000004429 atom Chemical group 0.000 claims description 27
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 19
- 238000004458 analytical method Methods 0.000 claims description 12
- 238000003795 desorption Methods 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 238000004611 spectroscopical analysis Methods 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 abstract description 19
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 572
- 239000004973 liquid crystal related substance Substances 0.000 description 113
- 239000003990 capacitor Substances 0.000 description 50
- 239000010410 layer Substances 0.000 description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 43
- 229910044991 metal oxide Inorganic materials 0.000 description 40
- 150000004706 metal oxides Chemical class 0.000 description 40
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 32
- 239000000463 material Substances 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 26
- 239000002184 metal Substances 0.000 description 26
- 239000002585 base Substances 0.000 description 25
- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 description 23
- 229910052757 nitrogen Inorganic materials 0.000 description 22
- 239000012298 atmosphere Substances 0.000 description 19
- 238000004544 sputter deposition Methods 0.000 description 19
- 239000011701 zinc Substances 0.000 description 18
- 239000004020 conductor Substances 0.000 description 17
- 230000006870 function Effects 0.000 description 17
- 238000012545 processing Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 16
- 238000001312 dry etching Methods 0.000 description 16
- 239000011787 zinc oxide Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000004364 calculation method Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 238000010521 absorption reaction Methods 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- 230000005684 electric field Effects 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000005401 electroluminescence Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 7
- 229910052801 chlorine Inorganic materials 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical group [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 6
- 229910052783 alkali metal Inorganic materials 0.000 description 6
- 150000001340 alkali metals Chemical class 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 230000002349 favourable effect Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 5
- 239000002156 adsorbate Substances 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000004380 ashing Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 229910000423 chromium oxide Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- -1 copper-magnesium-aluminum Chemical compound 0.000 description 5
- 230000001747 exhibiting effect Effects 0.000 description 5
- 238000007667 floating Methods 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910007541 Zn O Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 150000004678 hydrides Chemical class 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 238000012821 model calculation Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- UWCWUCKPEYNDNV-LBPRGKRZSA-N 2,6-dimethyl-n-[[(2s)-pyrrolidin-2-yl]methyl]aniline Chemical compound CC1=CC=CC(C)=C1NC[C@H]1NCCC1 UWCWUCKPEYNDNV-LBPRGKRZSA-N 0.000 description 2
- 229910018137 Al-Zn Inorganic materials 0.000 description 2
- 229910018573 Al—Zn Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 101001047514 Bos taurus Lethal(2) giant larvae protein homolog 1 Proteins 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- 108010083687 Ion Pumps Proteins 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910020868 Sn-Ga-Zn Inorganic materials 0.000 description 2
- 229910020923 Sn-O Inorganic materials 0.000 description 2
- 229910020994 Sn-Zn Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910009069 Sn—Zn Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018120 Al-Ga-Zn Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 229910019974 CrSi Inorganic materials 0.000 description 1
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 241001591005 Siga Species 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910020833 Sn-Al-Zn Inorganic materials 0.000 description 1
- 229910020944 Sn-Mg Inorganic materials 0.000 description 1
- 239000004974 Thermotropic liquid crystal Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910009369 Zn Mg Inorganic materials 0.000 description 1
- 229910007573 Zn-Mg Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 230000003098 cholesteric effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002605 large molecules Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 238000004698 pseudo-potential method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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Abstract
【解決手段】基板上にゲート電極を形成し、ゲート電極上にゲート絶縁膜を形成し、酸化物半導体膜を形成し、第1の酸化物半導体膜を形成した後、加熱処理をして第2の酸化物半導体膜を形成し、第1の導電膜を形成し、厚さの異なる領域を有する第1のレジストマスクを形成し、第1のレジストマスクを用いて第2の酸化物半導体膜および第1の導電膜をエッチングして第3の酸化物半導体膜および第2の導電膜を形成し、第1のレジストマスクを縮小させて、第2のレジストマスクを形成し、第2のレジストマスクを用いて第2の導電膜の一部を選択的に除去することでソース電極およびドレイン電極を形成する半導体装置の作製方法である。
【選択図】図1
Description
本実施の形態では、本発明の一態様であるトランジスタおよび該トランジスタの作製方法について図1乃至図7を用いて説明する。
本実施の形態では、実施の形態1のトランジスタ100、トランジスタ200、およびトランジスタ310における酸化物半導体膜105が、結晶領域を有する酸化物半導体膜である形態について説明する。該形態は、実施の形態1で説明した作製工程と一部異なる作製工程により作製することができる。なお、実施の形態1と同一の箇所には同じ符号を用い、同じ符号の詳細な説明はここでは省略する。
本実施の形態では、実施の形態1および実施の形態2で説明した作製方法で形成されるトランジスタに含まれる酸化物半導体膜の表面及び側面における酸素の欠損しやすさについて、以下のモデルを用いて計算を行い検証した結果について説明する。なお、実施の形態2で説明したCAAC酸化物半導体は、一側面に複数の結晶面を有することから、計算の一モデルとして用いると当該計算が複雑になる。そのため、本実施の形態では、c軸に配向したウルツ鉱構造であるZnO単結晶を用いて行った計算結果を示す。結晶のモデルとしては、図25に示すように、c軸に平行な面と垂直な面でそれぞれ結晶構造を切断し、(001)表面、(100)表面、及び(110)表面を作製している。
図9(A)に半導体装置を構成する記憶素子(以下、メモリセルとも記す。)の回路図の一例を示す。メモリセルは、酸化物半導体以外の材料(例えば、シリコン、ゲルマニウム、炭化シリコン、ガリウムヒ素、窒化ガリウム、有機化合物など)をチャネル形成領域に用いたトランジスタ1160と酸化物半導体をチャネル形成領域に用いたトランジスタ1162によって構成される。
本実施の形態では、容量素子を有するメモリセルの回路図の一例を示す。図11(A)に示すメモリセル1170は、第1の配線SL、第2の配線BL、第3の配線S1、第4の配線S2と、第5の配線WLと、トランジスタ1171(第1のトランジスタ)と、トランジスタ1172(第2のトランジスタ)と、容量素子1173と、から構成されている。トランジスタ1171は、酸化物半導体以外の材料をチャネル形成領域に用いており、トランジスタ1172はチャネル形成領域に酸化物半導体を用いている。
本実施の形態では、実施の形態1または実施の形態2に示す作製方法で作製されたトランジスタを用いた半導体装置の例について、図12を参照して説明する。
酸化物半導体をチャネル形成領域に用いたトランジスタを少なくとも一部に用いてCPU(Central Processing Unit)を構成することができる。
本実施の形態では、実施の形態1および実施の形態2の作製工程により作製されたトランジスタを、画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう。)を作製することができる。また、該トランジスタを用いた駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、本発明の一態様の作製方法で作製されるトランジスタを用いた保護回路について、図23を用いて説明する。
実施の形態8で説明した表示装置は、さまざまな電子機器に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)などが挙げられる。さらには、屋内でのデジタルサイネージ(Digital Signage:電子看板)、PID(Public Information Display)、電車などの乗り物の車内広告、等に適用することができる。特に、本発明の一態様である表示装置は、消費電力が低減されているため、長時間画像を表示させる上記電子機器として用いることは有用である。そこで、本発明の一態様である表示装置を用いた電子機器の一例を、図24に示す。
101 基板
102 下地絶縁膜
103 ゲート電極
104 ゲート絶縁膜
105 酸化物半導体膜
106a ソース電極
106b ドレイン電極
107 保護絶縁膜
108 チャネル保護膜
110a 低抵抗膜
110b 低抵抗膜
115 第1の酸化物半導体膜
117 第2の酸化物半導体膜
118 導電膜
119 レジストマスク
120 第3の酸化物半導体膜
121 導電膜
122a レジストマスク
122b レジストマスク
200 トランジスタ
300 基板
301a 半透過層
301b 遮光層
301c 遮光層
310 トランジスタ
400 基板
401 遮光部
402 回折格子部
403 グレートーンマスク
411 基板
412 半透光部
413 遮光部
414 ハーフトーンマスク
911a ゲート電極
911b ゲート電極
913 半導体膜
915a 第1の電極
925a コンタクトホール
925b コンタクトホール
926a コンタクトホール
926b コンタクトホール
930a 電極
930b 電極
945 第1の配線
960 第2の配線
970a トランジスタ
970b トランジスタ
997 保護回路
1000 テレビジョン装置
1001 筐体
1002 表示部
1004 筐体
1003 スピーカ
1005 操作キー
1006 接続端子
1007 センサ
1009 操作キー
1010 リモコン操作機
1011 表示部
1100 メモリセル
1111 駆動回路
1112 回路
1113 駆動回路
1120 メモリセルアレイ
1130 メモリセル
1131 トランジスタ
1132 容量素子
1140 メモリセルアレイ
1141 スイッチング素子
1142 記憶素子
1143 記憶素子群
1150 メモリセル
1151 トランジスタ
1152 トランジスタ
1153 トランジスタ
1154 トランジスタ
1155 トランジスタ
1156 トランジスタ
1160 トランジスタ
1161 トランジスタ
1162 トランジスタ
1163 トランジスタ
1164 トランジスタ
1170 メモリセル
1171 トランジスタ
1172 トランジスタ
1173 容量素子
1180 メモリセル
1181 トランジスタ
1182 トランジスタ
1183 容量素子
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
2000 デジタルサイネージ
2002 筐体
2004 筐体
2006 表示部
2008 スピーカ
2010 スピーカ
4000 液晶表示装置
4001 第1の基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 第2の基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4021 絶縁膜
4120 容量素子
4121 容量電極
4030 画素電極
4030a 画素電極
4030b 画素電極
4030c 画素電極
4031 対向電極
4033 絶縁膜
4032 絶縁膜
4035 ギャップ保持部材
4100 バックライト
4103 第1の偏光板
4104 第2の偏光板
4110 液晶素子
4150 電極
4150a 電極
4150b 電極
4150c 電極
4151a 電極
4151b 電極
4151c 電極
4151 電極
4152 絶縁膜
4158 突起物
4159 突起物
4200 画素
Claims (11)
- 基板上にゲート電極を形成し、
前記ゲート電極上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に第1の酸化物半導体膜を形成し、
前記第1の酸化物半導体膜を形成した後、加熱処理をして第2の酸化物半導体膜を形成し、
前記第2の酸化物半導体膜上に第1の導電膜を形成し、
前記第1の導電膜上に厚さの異なる領域を有する第1のレジストマスクを形成し、
前記第1のレジストマスクを用いて前記第2の酸化物半導体膜および前記第1の導電膜の一部を選択的に除去することで第3の酸化物半導体膜および第2の導電膜を形成し、
前記第1のレジストマスクを縮小させることで、少なくとも前記第2の導電膜の前記第3の酸化物半導体膜のチャネル形成領域と重畳する領域を露出させつつ、第2のレジストマスクを形成し、
前記第2のレジストマスクを用いて前記第2の導電膜の一部を選択的に除去することでソース電極およびドレイン電極を形成することを特徴とする半導体装置の作製方法。 - 基板上にゲート電極を形成し、
前記ゲート電極上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に第1の酸化物半導体膜を形成し、
前記第1の酸化物半導体膜上に第1の導電膜を形成し、
前記第1の導電膜を形成した後、加熱処理をして第2の酸化物半導体膜を形成し、
前記加熱処理をした前記第1の導電膜上に厚さの異なる領域を有する第1のレジストマスクを形成し、
前記第1のレジストマスクを用いて前記第2の前記酸化物半導体膜および前記加熱処理をした前記第1の導電膜の一部を選択的に除去することで第3の酸化物半導体膜および第2の導電膜を形成し、
前記第1のレジストマスクを縮小させることで、少なくとも前記第2の導電膜の前記第3の酸化物半導体膜のチャネル形成領域と重畳する領域を露出させつつ、第2のレジストマスクを形成し、
前記第2のレジストマスクを用いて前記第2の導電膜の一部を選択的に除去することでソース電極およびドレイン電極を形成することを特徴とする半導体装置の作製方法。 - 請求項1または請求項2において、
前記ソース電極および前記ドレイン電極を形成した後、前記ゲート絶縁膜、前記第3の酸化物半導体膜、前記ソース電極および前記ドレイン電極上に保護絶縁膜を形成し、
前記保護絶縁膜を形成した後、さらなる加熱処理をすることを特徴とする半導体装置の作製方法。 - 請求項3において、
前記ゲート絶縁膜および前記保護絶縁膜の少なくとも一方は、酸化物絶縁膜であることを特徴とする半導体装置の作製方法。 - 請求項3において、
前記ゲート絶縁膜および前記保護絶縁膜の少なくとも一方は、昇温脱離ガス分光法分析にて、酸素原子に換算しての酸素の脱離量が1.0×1018atoms/cm3以上である絶縁膜であることを特徴とする半導体装置の作製方法。 - 請求項3において、
前記ゲート絶縁膜および前記保護絶縁膜の少なくとも一方は、化学量論比より過剰な酸素を含む酸化物絶縁膜であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項6のいずれか一において、
前記加熱処理は、前記第1の酸化物半導体膜から水素を脱離させると共に、前記ゲート絶縁膜に含まれる酸素を前記第1の酸化物半導体膜に拡散させる温度で加熱することを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項7のいずれか一において、
前記第2の酸化物半導体膜および前記第3の酸化物半導体膜の水素濃度は、5×1018atoms/cm3未満であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項8のいずれか一において、
前記第1の酸化物半導体膜、前記第2の酸化物半導体膜および前記第3の酸化物半導体膜は、In、Ga、SnおよびZnから選ばれた二以上の元素を含むことを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項9のいずれか一において、
前記第1の酸化物半導体膜、前記第2の酸化物半導体膜および前記第3の酸化物半導体膜は、非単結晶であり、且つc軸配向の結晶領域を有する酸化物半導体膜であることを特徴とする半導体装置の作製方法。 - 請求項1乃至請求項10のいずれか一において、
前記第1のレジストマスクは、多階調マスクを用いて形成することを特徴とする半導体装置の作製方法。
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JP2013191648A (ja) * | 2012-03-13 | 2013-09-26 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
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WO2015053010A1 (ja) * | 2013-10-11 | 2015-04-16 | シャープ株式会社 | 半導体装置 |
US9754978B2 (en) | 2013-10-11 | 2017-09-05 | Sharp Kabushiki Kaisha | Semiconductor device with U-shaped active portion |
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Also Published As
Publication number | Publication date |
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KR102090894B1 (ko) | 2020-03-18 |
JP2020113780A (ja) | 2020-07-27 |
KR20120090784A (ko) | 2012-08-17 |
JP6268236B2 (ja) | 2018-01-24 |
CN102593186B (zh) | 2017-05-10 |
TW201234483A (en) | 2012-08-16 |
JP6678637B2 (ja) | 2020-04-08 |
KR101944566B1 (ko) | 2019-01-31 |
JP2016208048A (ja) | 2016-12-08 |
CN102593186A (zh) | 2012-07-18 |
US20120175610A1 (en) | 2012-07-12 |
US8536571B2 (en) | 2013-09-17 |
KR101460850B1 (ko) | 2014-11-11 |
KR20190009818A (ko) | 2019-01-29 |
JP2018078316A (ja) | 2018-05-17 |
KR20140061341A (ko) | 2014-05-21 |
CN107275410A (zh) | 2017-10-20 |
CN107256868A (zh) | 2017-10-17 |
JP5977524B2 (ja) | 2016-08-24 |
JP2024073476A (ja) | 2024-05-29 |
TWI532099B (zh) | 2016-05-01 |
JP2022118031A (ja) | 2022-08-12 |
US20140080253A1 (en) | 2014-03-20 |
US9166026B2 (en) | 2015-10-20 |
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