JP2012129568A - 異なるサイズの光散乱粒子を用いた発光デバイスのパッケージ - Google Patents
異なるサイズの光散乱粒子を用いた発光デバイスのパッケージ Download PDFInfo
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- 239000002245 particle Substances 0.000 title claims abstract description 65
- 238000000149 argon plasma sintering Methods 0.000 title abstract description 13
- 230000005855 radiation Effects 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 63
- 239000008393 encapsulating agent Substances 0.000 claims description 35
- 238000007789 sealing Methods 0.000 claims description 25
- 238000001228 spectrum Methods 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 239000010419 fine particle Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 36
- 238000000034 method Methods 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 230000008859 change Effects 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 9
- 239000003086 colorant Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001652 electrophoretic deposition Methods 0.000 description 3
- 239000008241 heterogeneous mixture Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 238000009877 rendering Methods 0.000 description 3
- 101100248200 Arabidopsis thaliana RGGB gene Proteins 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004924 electrostatic deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- CJDPJFRMHVXWPT-UHFFFAOYSA-N barium sulfide Chemical compound [S-2].[Ba+2] CJDPJFRMHVXWPT-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- -1 region Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/58—Optical field-shaping elements
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
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Abstract
【解決手段】発光体を少なくとも部分的に取り囲む、異なるサイズの光散乱粒子を備え、デバイスの空間的色混合度と色均一性を改良する輻射発光デバイスを提供する。複数のサイズの光散乱粒子が、単一の、または複数チップの多色の発光体パッケージを少なくとも部分的に取り囲むための媒質中に分散されている。異なるサイズの光散乱粒子は、発光する輻射の中のそれぞれ対応する波長範囲と相互作用する。このようにして、複数の波長範囲または副範囲に渡って発光する輻射は効率よく散乱されて、出力ビームにおける空間的に不均一な色パターンを除去する(または意図的に作る)ことが出来る。
【選択図】図2
Description
シリカゲル;
酸化亜鉛(ZnO);
酸化イットリウム(Y203);
二酸化チタン(Ti02);
硫化バリウム(BaS04);
アルミナ(Al203);
溶融石英(Si02);
ヒュームドシリカ(Si02);
窒化アルミニウム;
ガラス玉;
二酸化ジルコニウム(Zr02);
炭化珪素(SiC);
酸化タンタル(Ta05);
窒化珪素(Si3N4);
酸化ニオブ(Nb205);
窒化ホウ素(BN);または
蛍光剤粒子(例えば、YAG:Ce、BOSE)
列挙しなかった他の材料を用いてもよい。特定の散乱効果を実現するために、材料の色々な組み合わせ、または同じ材料の異なる形状の組み合わせを用いてもよい。例えば、1つの実施形態では、第1の複数のLSPがアルミナを含み、第2の複数のLSPが二酸化チタンを含んでもよい。別の例示的な実施形態では、第1の複数のLSPはルチル型二酸化チタンを含み、一方、第2の複数のLSPはアナタース型二酸化チタンを含んでもよい。発光デバイス200は2つの異なるサイズのLSPだけを含むことを特徴としているが、所望の出力を実現するために、より多くのサイズを用いることも出来る。
Claims (10)
- あるスペクトルの輻射を発光する少なくとも1つの発光体と、
前記少なくとも1つの発光体を少なくとも部分的に取り囲んでいる、第1のサイズを有する第1の複数の散乱粒子と、
前記少なくとも1つの発光体を少なくとも部分的に取り囲んでいる、第2のサイズを有する第2の複数の散乱粒子と
を備え、
前記発光体から発光する輻射の各部分が、前記第1および第2の複数の散乱粒子と相互作用することを特徴とする発光デバイス。 - 前記発光デバイスが少なくとも3つの異なるサイズの散乱粒子を備えるように、追加の複数の散乱粒子を更に備えることを特徴とする請求項1に記載の発光デバイス。
- 前記第1の複数の散乱粒子は、第1の波長範囲内に放出される輻射と相互作用し、
前記第2の複数の散乱粒子は、第2の波長範囲内に放出される輻射と相互作用することを特徴とする請求項1に記載の発光デバイス。 - 複数の発光体を更に備え、
前記発光体のそれぞれは、それぞれのスペクトルの輻射を放出することを特徴とする請求項1に記載の発光デバイス。 - 前記第1および第2の複数の散乱粒子は、放出された輻射の実質的にすべてが通過するように構成された封止体内に配置されていることを特徴とする請求項1に記載の発光デバイス。
- 前記第1および第2の複数の散乱粒子は、前記少なくとも1つの発光体を少なくとも部分的に取り囲む波長変換層内に配置されていることを特徴とする請求項1に記載の発光デバイス。
- 前記第1の複数の散乱粒子は、アルミナ粒子を含み、
前記アルミナ粒子は、約1−2μmの範囲の直径を有し、前記少なくとも1つの発光体を取り囲んでいる媒質内に体積濃度が約0.08%で分散していることを特徴とする請求項1に記載の発光デバイス。 - 前記第2の複数の散乱粒子は、サブミクロン・アルミナ粒子を含み、
前記サブミクロン・アルミナ粒子は、約1μm未満の直径を有し、前記媒質内に体積濃度が約0.14%で分散していることを特徴とする請求項7に記載の発光デバイス。 - 封止体であって、
第1の屈折率を有し、前記封止体の形状を画定する第1の材料と、
第2の屈折率を有し、前記第1の材料内に分散した、微粒子特性を有する第2の材料と、
第3の屈折率を有し、前記第1の材料内に分散した、微粒子特性を有する第3の材料と
を備えることを特徴とする封止体。 - 前記第2および前記第3の材料は、前記第1の材料の中で不均一に混ざっていることを特徴とする請求項9に記載の封止体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/895,573 US11114594B2 (en) | 2007-08-24 | 2007-08-24 | Light emitting device packages using light scattering particles of different size |
US11/895,573 | 2007-08-24 |
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JP2008163311A Division JP5091023B2 (ja) | 2007-08-24 | 2008-06-23 | 異なるサイズの光散乱粒子を用いた発光デバイスのパッケージ |
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JP2008163311A Active JP5091023B2 (ja) | 2007-08-24 | 2008-06-23 | 異なるサイズの光散乱粒子を用いた発光デバイスのパッケージ |
JP2012083671A Pending JP2012129568A (ja) | 2007-08-24 | 2012-04-02 | 異なるサイズの光散乱粒子を用いた発光デバイスのパッケージ |
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JP (2) | JP5091023B2 (ja) |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10784419B2 (en) | 2015-05-21 | 2020-09-22 | Nichia Corporation | Light emitting device |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US8669572B2 (en) | 2005-06-10 | 2014-03-11 | Cree, Inc. | Power lamp package |
US7910940B2 (en) * | 2005-08-05 | 2011-03-22 | Panasonic Corporation | Semiconductor light-emitting device |
US7675145B2 (en) | 2006-03-28 | 2010-03-09 | Cree Hong Kong Limited | Apparatus, system and method for use in mounting electronic elements |
US11210971B2 (en) * | 2009-07-06 | 2021-12-28 | Cree Huizhou Solid State Lighting Company Limited | Light emitting diode display with tilted peak emission pattern |
US8748915B2 (en) | 2006-04-24 | 2014-06-10 | Cree Hong Kong Limited | Emitter package with angled or vertical LED |
US7635915B2 (en) | 2006-04-26 | 2009-12-22 | Cree Hong Kong Limited | Apparatus and method for use in mounting electronic elements |
US8735920B2 (en) * | 2006-07-31 | 2014-05-27 | Cree, Inc. | Light emitting diode package with optical element |
US20080029720A1 (en) | 2006-08-03 | 2008-02-07 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
US8367945B2 (en) * | 2006-08-16 | 2013-02-05 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
US9711703B2 (en) * | 2007-02-12 | 2017-07-18 | Cree Huizhou Opto Limited | Apparatus, system and method for use in mounting electronic elements |
US11114594B2 (en) | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
US7791093B2 (en) * | 2007-09-04 | 2010-09-07 | Koninklijke Philips Electronics N.V. | LED with particles in encapsulant for increased light extraction and non-yellow off-state color |
CN101388161A (zh) * | 2007-09-14 | 2009-03-18 | 科锐香港有限公司 | Led表面安装装置和并入有此装置的led显示器 |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
USD633631S1 (en) | 2007-12-14 | 2011-03-01 | Cree Hong Kong Limited | Light source of light emitting diode |
US9287469B2 (en) * | 2008-05-02 | 2016-03-15 | Cree, Inc. | Encapsulation for phosphor-converted white light emitting diode |
US8049230B2 (en) | 2008-05-16 | 2011-11-01 | Cree Huizhou Opto Limited | Apparatus and system for miniature surface mount devices |
WO2009148543A2 (en) * | 2008-05-29 | 2009-12-10 | Cree, Inc. | Light source with near field mixing |
CN101621054A (zh) * | 2008-07-01 | 2010-01-06 | 展晶科技(深圳)有限公司 | 发光二极管光源装置 |
DE102008054029A1 (de) * | 2008-10-30 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
US8791471B2 (en) | 2008-11-07 | 2014-07-29 | Cree Hong Kong Limited | Multi-chip light emitting diode modules |
CN101771025A (zh) * | 2008-12-26 | 2010-07-07 | 富准精密工业(深圳)有限公司 | 发光二极管 |
JP2010231938A (ja) * | 2009-03-26 | 2010-10-14 | Panasonic Electric Works Co Ltd | Led照明装置 |
US20140175377A1 (en) * | 2009-04-07 | 2014-06-26 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US8415692B2 (en) * | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
JP5543157B2 (ja) * | 2009-08-25 | 2014-07-09 | 日東光学株式会社 | 光学素子および発光装置 |
US8258524B2 (en) * | 2010-01-26 | 2012-09-04 | Sharp Kabushiki Kaisha | Light emitting diode device |
US9012938B2 (en) | 2010-04-09 | 2015-04-21 | Cree, Inc. | High reflective substrate of light emitting devices with improved light output |
CN102237469A (zh) * | 2010-04-29 | 2011-11-09 | 展晶科技(深圳)有限公司 | 发光二极管的封装结构 |
CN101894898B (zh) * | 2010-06-13 | 2013-07-17 | 深圳雷曼光电科技股份有限公司 | 一种led及其封装方法 |
DE102010034923A1 (de) * | 2010-08-20 | 2012-02-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Schichtverbunds aus einer Lumineszenzkonversionsschicht und einer Streuschicht |
US8297767B2 (en) | 2010-09-07 | 2012-10-30 | Xicato, Inc. | LED-based illumination modules with PTFE color converting surfaces |
US20120068187A1 (en) * | 2010-09-20 | 2012-03-22 | Micron Technology, Inc. | Solid state lighting devices with improved color uniformity and methods of manufacturing |
CN103155024B (zh) * | 2010-10-05 | 2016-09-14 | 英特曼帝克司公司 | 具光致发光波长转换的固态发光装置及标牌 |
US8604678B2 (en) | 2010-10-05 | 2013-12-10 | Intematix Corporation | Wavelength conversion component with a diffusing layer |
US8610341B2 (en) | 2010-10-05 | 2013-12-17 | Intematix Corporation | Wavelength conversion component |
US8957585B2 (en) | 2010-10-05 | 2015-02-17 | Intermatix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
US8614539B2 (en) | 2010-10-05 | 2013-12-24 | Intematix Corporation | Wavelength conversion component with scattering particles |
US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
US8455882B2 (en) | 2010-10-15 | 2013-06-04 | Cree, Inc. | High efficiency LEDs |
CN102451812B (zh) * | 2010-10-26 | 2014-02-19 | 展晶科技(深圳)有限公司 | 荧光粉涂布方法 |
DE102010061801A1 (de) * | 2010-11-23 | 2012-05-24 | Tridonic Jennersdorf Gmbh | LED-Modul mit gemeinsamem Farbumwandlungsmodul für wenigstens zwei LED-Chips |
JPWO2013105514A1 (ja) * | 2012-01-13 | 2015-05-11 | コニカミノルタ株式会社 | Led装置 |
JP2013232479A (ja) | 2012-04-27 | 2013-11-14 | Toshiba Corp | 半導体発光装置 |
US20140185269A1 (en) | 2012-12-28 | 2014-07-03 | Intermatix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
TWI627371B (zh) | 2013-03-15 | 2018-06-21 | 英特曼帝克司公司 | 光致發光波長轉換組件 |
DE102013103416A1 (de) * | 2013-04-05 | 2014-10-23 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierende Baugruppe und Verfahren zum Herstellen einer elektromagnetische Strahlung emittierenden Baugruppe |
US9231168B2 (en) * | 2013-05-02 | 2016-01-05 | Industrial Technology Research Institute | Light emitting diode package structure |
KR20160052552A (ko) * | 2013-09-06 | 2016-05-12 | 닛토덴코 가부시키가이샤 | 광 반도체 소자 봉지 조성물, 광 반도체 소자 봉지 성형체, 광 반도체 소자 봉지 시트, 광 반도체 장치 및 봉지 광 반도체 소자 |
JP2015073084A (ja) * | 2013-09-06 | 2015-04-16 | 日東電工株式会社 | 波長変換シート、封止光半導体素子および光半導体素子装置 |
WO2016056316A1 (ja) * | 2014-10-09 | 2016-04-14 | シャープ株式会社 | 発光装置 |
JP6372394B2 (ja) * | 2015-02-27 | 2018-08-15 | 豊田合成株式会社 | 発光装置 |
BR102016004795B1 (pt) | 2015-03-05 | 2021-09-08 | Nichia Corporation | Diodo emissor de luz |
US10074635B2 (en) * | 2015-07-17 | 2018-09-11 | Cree, Inc. | Solid state light emitter devices and methods |
TWI721005B (zh) * | 2016-08-17 | 2021-03-11 | 晶元光電股份有限公司 | 發光裝置以及其製造方法 |
EP3580820B1 (en) | 2017-02-08 | 2022-03-30 | Princeton Optronics, Inc. | Vcsel illuminator package including an optical structure integrated in the encapsulant |
JP6666873B2 (ja) * | 2017-03-28 | 2020-03-18 | 株式会社朝日ラバー | 疑似白色系led装置及びシリコーンキャップ |
CA3064378C (en) | 2017-06-08 | 2023-02-28 | Leia Inc. | Light source and multiview backlight using the same |
CN107481999A (zh) * | 2017-07-26 | 2017-12-15 | 深圳市英唐光显技术有限公司 | 一种多晶片白光led封装结构 |
DE102017117536A1 (de) * | 2017-08-02 | 2019-02-07 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
US10256376B1 (en) * | 2018-01-16 | 2019-04-09 | Leedarson Lighting Co. Ltd. | LED device |
CN110197867A (zh) | 2018-02-26 | 2019-09-03 | 世迈克琉明有限公司 | 半导体发光器件及其制造方法 |
US10825949B2 (en) | 2018-08-27 | 2020-11-03 | Nichia Corporation | Method of manufacturing light emitting device |
JP6912746B1 (ja) * | 2020-02-07 | 2021-08-04 | 日亜化学工業株式会社 | 発光モジュール及び面状光源 |
US11946640B2 (en) * | 2020-05-15 | 2024-04-02 | Lumileds Llc | Multi-color LED light source with plurality of phosphor fillings |
US11367810B2 (en) | 2020-08-14 | 2022-06-21 | Creeled, Inc. | Light-altering particle arrangements for light-emitting devices |
CN112582385A (zh) * | 2020-12-10 | 2021-03-30 | 高创(苏州)电子有限公司 | 一种蓝光led封装结构、背光模组及显示装置 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04137570A (ja) * | 1990-09-27 | 1992-05-12 | Sanyo Electric Co Ltd | 発光ダイオードランプ |
US20030038596A1 (en) * | 2001-08-21 | 2003-02-27 | Wen-Chih Ho | Light-mixing layer and method |
JP2004055772A (ja) * | 2002-07-18 | 2004-02-19 | Citizen Electronics Co Ltd | Led発光装置 |
JP2004341446A (ja) * | 2003-05-19 | 2004-12-02 | Nitto Jushi Kogyo Kk | 光拡散体及びそれを用いた光学部材乃至光学デバイス |
JP2005232305A (ja) * | 2004-02-19 | 2005-09-02 | Nichia Chem Ind Ltd | アルカリ土類金属アルミン酸塩蛍光体及びそれを用いた発光装置 |
WO2005091387A1 (ja) * | 2004-03-24 | 2005-09-29 | Toshiba Lighting & Technology Corporation | 発光装置および照明装置 |
JP2006114900A (ja) * | 2004-10-14 | 2006-04-27 | Agilent Technol Inc | 量子ドットと非量子蛍光材料を使って出力光を放射するためのデバイス及び方法 |
JP2006229109A (ja) * | 2005-02-21 | 2006-08-31 | Matsushita Electric Ind Co Ltd | 半導体発光装置およびその製造方法 |
JP2006269778A (ja) * | 2005-03-24 | 2006-10-05 | Nichia Chem Ind Ltd | 光学装置 |
JP2007149909A (ja) * | 2005-11-28 | 2007-06-14 | Nichia Chem Ind Ltd | 発光装置 |
JP2007165508A (ja) * | 2005-12-13 | 2007-06-28 | Sumitomo Osaka Cement Co Ltd | 発光素子封止用組成物及び発光素子並びに光半導体装置 |
JP2007173373A (ja) * | 2005-12-20 | 2007-07-05 | Toshiba Lighting & Technology Corp | 発光装置 |
Family Cites Families (207)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US525507A (en) | 1894-09-04 | Spray-nozzle | ||
US82562A (en) * | 1868-09-29 | strotjd | ||
JPS5722581Y2 (ja) | 1979-08-21 | 1982-05-17 | ||
US4476620A (en) | 1979-10-19 | 1984-10-16 | Matsushita Electric Industrial Co., Ltd. | Method of making a gallium nitride light-emitting diode |
DE3128187A1 (de) | 1981-07-16 | 1983-02-03 | Joachim 8068 Pfaffenhofen Sieg | Opto-elektronisches bauelement |
JPS6092678A (ja) | 1983-10-27 | 1985-05-24 | Stanley Electric Co Ltd | 表示用発光ダイオ−ドの製造方法 |
US4675575A (en) * | 1984-07-13 | 1987-06-23 | E & G Enterprises | Light-emitting diode assemblies and systems therefore |
JPS6159886A (ja) | 1984-08-31 | 1986-03-27 | Fujitsu Ltd | 光半導体装置の製造方法 |
US4653765A (en) * | 1985-12-02 | 1987-03-31 | Milliken Research Corporation | Drum truck |
US4866005A (en) * | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
US4981551A (en) | 1987-11-03 | 1991-01-01 | North Carolina State University | Dry etching of silicon carbide |
US4865685A (en) | 1987-11-03 | 1989-09-12 | North Carolina State University | Dry etching of silicon carbide |
JPH0770755B2 (ja) | 1988-01-21 | 1995-07-31 | 三菱化学株式会社 | 高輝度led用エピタキシャル基板及びその製造方法 |
US4912532A (en) | 1988-08-26 | 1990-03-27 | Hewlett-Packard Company | Electro-optical device with inverted transparent substrate and method for making same |
US5087949A (en) | 1989-06-27 | 1992-02-11 | Hewlett-Packard Company | Light-emitting diode with diagonal faces |
US5103271A (en) | 1989-09-28 | 1992-04-07 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method of fabricating the same |
US4946547A (en) * | 1989-10-13 | 1990-08-07 | Cree Research, Inc. | Method of preparing silicon carbide surfaces for crystal growth |
JPH03206672A (ja) | 1990-01-08 | 1991-09-10 | Seiwa Denki Kk | 発光ダイオード素子およびその製造方法 |
JPH03206673A (ja) | 1990-01-08 | 1991-09-10 | Seiwa Denki Kk | 発光ダイオード素子およびその製造方法 |
US5200022A (en) * | 1990-10-03 | 1993-04-06 | Cree Research, Inc. | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
US5300788A (en) * | 1991-01-18 | 1994-04-05 | Kopin Corporation | Light emitting diode bars and arrays and method of making same |
FR2679253B1 (fr) | 1991-07-15 | 1994-09-02 | Pasteur Institut | Proteines de resistance a la cycloheximide. utilisation comme marqueur de selection par exemple pour controler le transfert d'acides nucleiques. |
US5298767A (en) | 1992-10-06 | 1994-03-29 | Kulite Semiconductor Products, Inc. | Porous silicon carbide (SiC) semiconductor device |
US5376580A (en) | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
GB9320291D0 (en) | 1993-10-01 | 1993-11-17 | Brown John H | Optical directing devices for light emitting diodes |
JPH08148280A (ja) | 1994-04-14 | 1996-06-07 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2994219B2 (ja) | 1994-05-24 | 1999-12-27 | シャープ株式会社 | 半導体デバイスの製造方法 |
US5614734A (en) * | 1995-03-15 | 1997-03-25 | Yale University | High efficency LED structure |
JPH09153646A (ja) | 1995-09-27 | 1997-06-10 | Toshiba Corp | 光半導体装置およびその製造方法 |
DE19536334A1 (de) * | 1995-09-29 | 1997-04-03 | Teves Gmbh Alfred | Geberzylinder |
US5803579A (en) | 1996-06-13 | 1998-09-08 | Gentex Corporation | Illuminator assembly incorporating light emitting diodes |
US6550949B1 (en) | 1996-06-13 | 2003-04-22 | Gentex Corporation | Systems and components for enhancing rear vision from a vehicle |
DE19640594B4 (de) | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
JPH10163535A (ja) | 1996-11-27 | 1998-06-19 | Kasei Optonix Co Ltd | 白色発光素子 |
US5939732A (en) | 1997-05-22 | 1999-08-17 | Kulite Semiconductor Products, Inc. | Vertical cavity-emitting porous silicon carbide light-emitting diode device and preparation thereof |
US6784463B2 (en) | 1997-06-03 | 2004-08-31 | Lumileds Lighting U.S., Llc | III-Phospide and III-Arsenide flip chip light-emitting devices |
US7014336B1 (en) * | 1999-11-18 | 2006-03-21 | Color Kinetics Incorporated | Systems and methods for generating and modulating illumination conditions |
US6071795A (en) | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
JPH11238913A (ja) | 1998-02-20 | 1999-08-31 | Namiki Precision Jewel Co Ltd | 半導体発光デバイスチップ |
JPH11307813A (ja) | 1998-04-03 | 1999-11-05 | Hewlett Packard Co <Hp> | 発光装置、その製造方法およびディスプレイ |
US6225647B1 (en) | 1998-07-27 | 2001-05-01 | Kulite Semiconductor Products, Inc. | Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same |
US5959316A (en) | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
JP3525061B2 (ja) | 1998-09-25 | 2004-05-10 | 株式会社東芝 | 半導体発光素子の製造方法 |
DE69937993C5 (de) | 1998-09-28 | 2019-01-10 | Koninklijke Philips N.V. | Beleuchtungsanordnung |
US6274924B1 (en) | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
US6160834A (en) * | 1998-11-14 | 2000-12-12 | Cielo Communications, Inc. | Vertical cavity surface emitting lasers with consistent slope efficiencies |
US6429583B1 (en) | 1998-11-30 | 2002-08-06 | General Electric Company | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
US6744800B1 (en) | 1998-12-30 | 2004-06-01 | Xerox Corporation | Method and structure for nitride based laser diode arrays on an insulating substrate |
US6212213B1 (en) * | 1999-01-29 | 2001-04-03 | Agilent Technologies, Inc. | Projector light source utilizing a solid state green light source |
US6320206B1 (en) | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
US20010042866A1 (en) | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
JP3881472B2 (ja) * | 1999-04-15 | 2007-02-14 | ローム株式会社 | 半導体発光素子の製法 |
US6258699B1 (en) | 1999-05-10 | 2001-07-10 | Visual Photonics Epitaxy Co., Ltd. | Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for manufacturing the same |
US6489637B1 (en) | 1999-06-09 | 2002-12-03 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
JP2000353826A (ja) | 1999-06-09 | 2000-12-19 | Sanyo Electric Co Ltd | 混成集積回路装置および光照射装置 |
DE60042187D1 (de) | 1999-06-09 | 2009-06-25 | Toshiba Kawasaki Kk | Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren |
EP1059678A2 (en) | 1999-06-09 | 2000-12-13 | Sanyo Electric Co., Ltd. | Hybrid integrated circuit device |
KR100425566B1 (ko) | 1999-06-23 | 2004-04-01 | 가부시키가이샤 시티즌 덴시 | 발광 다이오드 |
DE19931689A1 (de) | 1999-07-08 | 2001-01-11 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Optoelektronische Bauteilgruppe |
JP2001148515A (ja) | 1999-11-22 | 2001-05-29 | Sharp Corp | 発光装置、その製造方法、及び発光装置を搭載した電子機器 |
US6513949B1 (en) | 1999-12-02 | 2003-02-04 | Koninklijke Philips Electronics N.V. | LED/phosphor-LED hybrid lighting systems |
US6410942B1 (en) * | 1999-12-03 | 2002-06-25 | Cree Lighting Company | Enhanced light extraction through the use of micro-LED arrays |
CN1292493C (zh) * | 1999-12-03 | 2006-12-27 | 美商克立股份有限公司 | 藉由内部及外部光学组件之使用而加强发光二极管中的光放出 |
US6350041B1 (en) * | 1999-12-03 | 2002-02-26 | Cree Lighting Company | High output radial dispersing lamp using a solid state light source |
US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
US6646292B2 (en) | 1999-12-22 | 2003-11-11 | Lumileds Lighting, U.S., Llc | Semiconductor light emitting device and method |
WO2001059851A1 (en) | 2000-02-09 | 2001-08-16 | Nippon Leiz Corporation | Light source |
DE10008583A1 (de) | 2000-02-24 | 2001-09-13 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optisch transparenten Substrates und Verfahren zum Herstellen eines lichtemittierenden Halbleiterchips |
US6538371B1 (en) * | 2000-03-27 | 2003-03-25 | The General Electric Company | White light illumination system with improved color output |
JP4060511B2 (ja) | 2000-03-28 | 2008-03-12 | パイオニア株式会社 | 窒化物半導体素子の分離方法 |
US6653765B1 (en) * | 2000-04-17 | 2003-11-25 | General Electric Company | Uniform angular light distribution from LEDs |
DE10051465A1 (de) | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
JP3685018B2 (ja) | 2000-05-09 | 2005-08-17 | 日亜化学工業株式会社 | 発光素子とその製造方法 |
US6534346B2 (en) | 2000-05-16 | 2003-03-18 | Nippon Electric Glass Co., Ltd. | Glass and glass tube for encapsulating semiconductors |
JP2002057376A (ja) | 2000-05-31 | 2002-02-22 | Matsushita Electric Ind Co Ltd | Ledランプ |
JP4386693B2 (ja) | 2000-05-31 | 2009-12-16 | パナソニック株式会社 | Ledランプおよびランプユニット |
US6577073B2 (en) * | 2000-05-31 | 2003-06-10 | Matsushita Electric Industrial Co., Ltd. | Led lamp |
US6841808B2 (en) * | 2000-06-23 | 2005-01-11 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and method for producing the same |
JP2002050797A (ja) * | 2000-07-31 | 2002-02-15 | Toshiba Corp | 半導体励起蛍光体発光装置およびその製造方法 |
US6562648B1 (en) | 2000-08-23 | 2003-05-13 | Xerox Corporation | Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials |
DE10042947A1 (de) | 2000-08-31 | 2002-03-21 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis |
JP3466144B2 (ja) | 2000-09-22 | 2003-11-10 | 士郎 酒井 | 半導体の表面を荒くする方法 |
US6429460B1 (en) | 2000-09-28 | 2002-08-06 | United Epitaxy Company, Ltd. | Highly luminous light emitting device |
JP4091261B2 (ja) | 2000-10-31 | 2008-05-28 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
WO2002041364A2 (en) | 2000-11-16 | 2002-05-23 | Emcore Corporation | Led packages having improved light extraction |
JP4112800B2 (ja) * | 2000-12-05 | 2008-07-02 | 富士フイルム株式会社 | 発光素子及びその製造方法 |
US6547423B2 (en) * | 2000-12-22 | 2003-04-15 | Koninklijke Phillips Electronics N.V. | LED collimation optics with improved performance and reduced size |
AT410266B (de) | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
MY145695A (en) * | 2001-01-24 | 2012-03-30 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6468824B2 (en) | 2001-03-22 | 2002-10-22 | Uni Light Technology Inc. | Method for forming a semiconductor device having a metallic substrate |
US6833566B2 (en) | 2001-03-28 | 2004-12-21 | Toyoda Gosei Co., Ltd. | Light emitting diode with heat sink |
JP2002299694A (ja) | 2001-03-29 | 2002-10-11 | Mitsubishi Electric Lighting Corp | 照明用led光源デバイス及び照明器具 |
JP2002299699A (ja) | 2001-03-30 | 2002-10-11 | Sumitomo Electric Ind Ltd | 発光装置およびその製造方法 |
JP4101468B2 (ja) | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | 発光装置の製造方法 |
US6686676B2 (en) | 2001-04-30 | 2004-02-03 | General Electric Company | UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same |
US6616862B2 (en) | 2001-05-21 | 2003-09-09 | General Electric Company | Yellow light-emitting halophosphate phosphors and light sources incorporating the same |
JP3940596B2 (ja) | 2001-05-24 | 2007-07-04 | 松下電器産業株式会社 | 照明光源 |
US6946788B2 (en) | 2001-05-29 | 2005-09-20 | Toyoda Gosei Co., Ltd. | Light-emitting element |
US6642652B2 (en) * | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
US6576488B2 (en) | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
TW564584B (en) * | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
DE10131698A1 (de) | 2001-06-29 | 2003-01-30 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung |
JP2003031008A (ja) | 2001-07-16 | 2003-01-31 | Toyoda Gosei Co Ltd | 車両ランプ |
TW552726B (en) | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
US20030030063A1 (en) * | 2001-07-27 | 2003-02-13 | Krzysztof Sosniak | Mixed color leds for auto vanity mirrors and other applications where color differentiation is critical |
JP3905343B2 (ja) | 2001-10-09 | 2007-04-18 | シチズン電子株式会社 | 発光ダイオード |
JP4239564B2 (ja) | 2002-11-15 | 2009-03-18 | 豊田合成株式会社 | 発光ダイオードおよびledライト |
US6552495B1 (en) * | 2001-12-19 | 2003-04-22 | Koninklijke Philips Electronics N.V. | Adaptive control system and method with spatial uniform color metric for RGB LED based white light illumination |
US6455340B1 (en) * | 2001-12-21 | 2002-09-24 | Xerox Corporation | Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff |
TW520616B (en) | 2001-12-31 | 2003-02-11 | Ritdisplay Corp | Manufacturing method of organic surface light emitting device |
US6480389B1 (en) | 2002-01-04 | 2002-11-12 | Opto Tech Corporation | Heat dissipation structure for solid-state light emitting device package |
EP2262008B1 (en) | 2002-01-28 | 2015-12-16 | Nichia Corporation | Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element |
KR200277135Y1 (ko) | 2002-03-04 | 2002-05-30 | 주식회사 토우그린 | 레이저 안개등 |
TW577178B (en) * | 2002-03-04 | 2004-02-21 | United Epitaxy Co Ltd | High efficient reflective metal layer of light emitting diode |
US6716654B2 (en) | 2002-03-12 | 2004-04-06 | Opto Tech Corporation | Light-emitting diode with enhanced brightness and method for fabricating the same |
JP4233268B2 (ja) * | 2002-04-23 | 2009-03-04 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
TWI226357B (en) * | 2002-05-06 | 2005-01-11 | Osram Opto Semiconductors Gmbh | Wavelength-converting reaction-resin, its production method, light-radiating optical component and light-radiating semiconductor-body |
CN100352885C (zh) | 2002-05-06 | 2007-12-05 | 奥斯兰姆奥普托半导体有限责任公司 | 波长变化的反应性树脂材料和发光二极管元件 |
US6870311B2 (en) * | 2002-06-07 | 2005-03-22 | Lumileds Lighting U.S., Llc | Light-emitting devices utilizing nanoparticles |
US6828596B2 (en) * | 2002-06-13 | 2004-12-07 | Lumileds Lighting U.S., Llc | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
WO2003107441A2 (en) * | 2002-06-13 | 2003-12-24 | Cree, Inc. | Saturated phosphor solid emitter |
JP2004031856A (ja) | 2002-06-28 | 2004-01-29 | Sumitomo Electric Ind Ltd | ZnSe系発光装置およびその製造方法 |
JP4349782B2 (ja) | 2002-09-11 | 2009-10-21 | 東芝ライテック株式会社 | Led照明装置 |
DE10245933B4 (de) | 2002-09-30 | 2013-10-10 | Osram Opto Semiconductors Gmbh | Einrichtung zur Erzeugung eines gebündelten Lichtstroms |
US6786390B2 (en) | 2003-02-04 | 2004-09-07 | United Epitaxy Company Ltd. | LED stack manufacturing method and its structure thereof |
US6936857B2 (en) * | 2003-02-18 | 2005-08-30 | Gelcore, Llc | White light LED device |
JP2004259541A (ja) | 2003-02-25 | 2004-09-16 | Cateye Co Ltd | 照明器具 |
EP2264798B1 (en) | 2003-04-30 | 2020-10-14 | Cree, Inc. | High powered light emitter packages with compact optics |
US7005679B2 (en) * | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
US6869812B1 (en) | 2003-05-13 | 2005-03-22 | Heng Liu | High power AllnGaN based multi-chip light emitting diode |
JP2004356116A (ja) | 2003-05-26 | 2004-12-16 | Citizen Electronics Co Ltd | 発光ダイオード |
JP2005210042A (ja) | 2003-09-11 | 2005-08-04 | Kyocera Corp | 発光装置および照明装置 |
US6806112B1 (en) | 2003-09-22 | 2004-10-19 | National Chung-Hsing University | High brightness light emitting diode |
US6972438B2 (en) | 2003-09-30 | 2005-12-06 | Cree, Inc. | Light emitting diode with porous SiC substrate and method for fabricating |
US20050077535A1 (en) * | 2003-10-08 | 2005-04-14 | Joinscan Electronics Co., Ltd | LED and its manufacturing process |
US20050082562A1 (en) | 2003-10-15 | 2005-04-21 | Epistar Corporation | High efficiency nitride based light emitting device |
JP4458804B2 (ja) * | 2003-10-17 | 2010-04-28 | シチズン電子株式会社 | 白色led |
US7009215B2 (en) * | 2003-10-24 | 2006-03-07 | General Electric Company | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
US6841804B1 (en) | 2003-10-27 | 2005-01-11 | Formosa Epitaxy Incorporation | Device of white light-emitting diode |
JP2005142311A (ja) | 2003-11-06 | 2005-06-02 | Tzu-Chi Cheng | 発光装置 |
JP4124102B2 (ja) | 2003-11-12 | 2008-07-23 | 松下電工株式会社 | 多重反射防止構造を備えた発光素子とその製造方法 |
TWI291770B (en) * | 2003-11-14 | 2007-12-21 | Hon Hai Prec Ind Co Ltd | Surface light source device and light emitting diode |
JP2006032885A (ja) * | 2003-11-18 | 2006-02-02 | Sharp Corp | 光源装置およびそれを用いた光通信装置 |
US7095056B2 (en) * | 2003-12-10 | 2006-08-22 | Sensor Electronic Technology, Inc. | White light emitting device and method |
JP4442216B2 (ja) * | 2003-12-19 | 2010-03-31 | 豊田合成株式会社 | Ledランプ装置 |
US7066623B2 (en) * | 2003-12-19 | 2006-06-27 | Soo Ghee Lee | Method and apparatus for producing untainted white light using off-white light emitting diodes |
JP3897806B2 (ja) * | 2004-01-07 | 2007-03-28 | 松下電器産業株式会社 | Led照明光源 |
US7178937B2 (en) | 2004-01-23 | 2007-02-20 | Mcdermott Vernon | Lighting device and method for lighting |
US7246921B2 (en) | 2004-02-03 | 2007-07-24 | Illumitech, Inc. | Back-reflecting LED light source |
JP2005310756A (ja) | 2004-03-26 | 2005-11-04 | Koito Mfg Co Ltd | 光源モジュールおよび車両用前照灯 |
US7419912B2 (en) | 2004-04-01 | 2008-09-02 | Cree, Inc. | Laser patterning of light emitting devices |
US7868343B2 (en) * | 2004-04-06 | 2011-01-11 | Cree, Inc. | Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same |
WO2005104247A1 (ja) | 2004-04-19 | 2005-11-03 | Matsushita Electric Industrial Co., Ltd. | Led照明光源の製造方法およびled照明光源 |
US7837348B2 (en) * | 2004-05-05 | 2010-11-23 | Rensselaer Polytechnic Institute | Lighting system using multiple colored light emitting sources and diffuser element |
US7553683B2 (en) * | 2004-06-09 | 2009-06-30 | Philips Lumiled Lighting Co., Llc | Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices |
US7122840B2 (en) | 2004-06-17 | 2006-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor with optical guard ring and fabrication method thereof |
EP1761958A2 (en) | 2004-06-18 | 2007-03-14 | Philips Intellectual Property & Standards GmbH | Led with improved light emittance profile |
US7795623B2 (en) | 2004-06-30 | 2010-09-14 | Cree, Inc. | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
WO2006006555A1 (ja) | 2004-07-12 | 2006-01-19 | Rohm Co., Ltd. | 半導体発光素子 |
TWI274209B (en) | 2004-07-16 | 2007-02-21 | Chi Lin Technology Co Ltd | Light emitting diode and backlight module having light emitting diode |
US7217583B2 (en) | 2004-09-21 | 2007-05-15 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
JP4121536B2 (ja) | 2004-09-27 | 2008-07-23 | 松下電器産業株式会社 | 半導体発光素子、その製造方法及びその実装方法、並びに発光装置 |
TWI257714B (en) | 2004-10-20 | 2006-07-01 | Arima Optoelectronics Corp | Light-emitting device using multilayer composite metal plated layer as flip-chip electrode |
DE102004053116A1 (de) | 2004-11-03 | 2006-05-04 | Tridonic Optoelectronics Gmbh | Leuchtdioden-Anordnung mit Farbkonversions-Material |
US7419839B2 (en) | 2004-11-12 | 2008-09-02 | Philips Lumileds Lighting Company, Llc | Bonding an optical element to a light emitting device |
US7462502B2 (en) | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
US7858408B2 (en) * | 2004-11-15 | 2010-12-28 | Koninklijke Philips Electronics N.V. | LED with phosphor tile and overmolded phosphor in lens |
US20060189013A1 (en) | 2005-02-24 | 2006-08-24 | 3M Innovative Properties Company | Method of making LED encapsulant with undulating surface |
TWI255566B (en) | 2005-03-04 | 2006-05-21 | Jemitek Electronics Corp | Led |
WO2006105646A1 (en) | 2005-04-06 | 2006-10-12 | Tir Systems Ltd. | Lighting module with compact colour mixing and collimating optics |
US20060228973A1 (en) | 2005-04-11 | 2006-10-12 | Jlj, Inc. | LED Light Strings |
TW200707799A (en) | 2005-04-21 | 2007-02-16 | Aonex Technologies Inc | Bonded intermediate substrate and method of making same |
KR100682874B1 (ko) | 2005-05-02 | 2007-02-15 | 삼성전기주식회사 | 백색 led |
US7348212B2 (en) * | 2005-09-13 | 2008-03-25 | Philips Lumileds Lighting Company Llc | Interconnects for semiconductor light emitting devices |
US20070007558A1 (en) | 2005-06-27 | 2007-01-11 | Mazzochette Joseph B | Light emitting diode package and method for making same |
WO2007018927A2 (en) * | 2005-07-22 | 2007-02-15 | Illumination Management Solutions, Inc. | A light-conducting pedestal configuration for an led |
JP2007035802A (ja) | 2005-07-25 | 2007-02-08 | Matsushita Electric Works Ltd | 発光装置 |
TWI273718B (en) * | 2005-10-12 | 2007-02-11 | Advanced Semiconductor Eng | Lead frame base package structure with high-density of foot prints arrangement |
US7514721B2 (en) | 2005-11-29 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Luminescent ceramic element for a light emitting device |
JP2007173372A (ja) | 2005-12-20 | 2007-07-05 | Denso Corp | 電力変換装置 |
US7213940B1 (en) | 2005-12-21 | 2007-05-08 | Led Lighting Fixtures, Inc. | Lighting device and lighting method |
US8441179B2 (en) * | 2006-01-20 | 2013-05-14 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
CN101375420B (zh) * | 2006-01-24 | 2010-11-10 | 皇家飞利浦电子股份有限公司 | 发光器件 |
US7682850B2 (en) | 2006-03-17 | 2010-03-23 | Philips Lumileds Lighting Company, Llc | White LED for backlight with phosphor plates |
JP2007294197A (ja) | 2006-04-24 | 2007-11-08 | Harison Toshiba Lighting Corp | 照明装置 |
US8193702B2 (en) * | 2006-05-02 | 2012-06-05 | Switch Bulb Company, Inc. | Method of light dispersion and preferential scattering of certain wavelengths of light-emitting diodes and bulbs constructed therefrom |
US7626210B2 (en) | 2006-06-09 | 2009-12-01 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED |
JP4937845B2 (ja) | 2006-08-03 | 2012-05-23 | 日立マクセル株式会社 | 照明装置および表示装置 |
JP2008084990A (ja) | 2006-09-26 | 2008-04-10 | Matsushita Electric Works Ltd | 発光装置及び照明器具 |
TWI326923B (en) * | 2007-03-07 | 2010-07-01 | Lite On Technology Corp | White light emitting diode |
KR101289069B1 (ko) * | 2007-05-09 | 2013-07-22 | 엘지디스플레이 주식회사 | 2중 렌즈구조의 led 패키지 및 이를 구비한액정표시장치 |
US7999283B2 (en) | 2007-06-14 | 2011-08-16 | Cree, Inc. | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
TW200910654A (en) * | 2007-06-27 | 2009-03-01 | Univ California | Optical designs for high-efficacy white-light emitting diodes |
US20090008662A1 (en) * | 2007-07-05 | 2009-01-08 | Ian Ashdown | Lighting device package |
US11114594B2 (en) | 2007-08-24 | 2021-09-07 | Creeled, Inc. | Light emitting device packages using light scattering particles of different size |
DE102007046743A1 (de) | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement sowie Verfahren zu dessen Herstellung |
CN101567366A (zh) * | 2008-04-25 | 2009-10-28 | 展晶科技(深圳)有限公司 | 发光二极管 |
EP2139216B1 (en) | 2008-06-27 | 2014-07-16 | Nokia Solutions and Networks Oy | Method and network element for processing data and communication system comprising such network element |
US8858032B2 (en) | 2008-10-24 | 2014-10-14 | Cree, Inc. | Lighting device, heat transfer structure and heat transfer element |
DE102008064073A1 (de) | 2008-12-19 | 2010-06-24 | Osram Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Mehrzahl von LED-Beleuchtungsvorrichtungen und LED-Beleuchtungsvorrichtung |
KR20120062773A (ko) | 2009-08-14 | 2012-06-14 | 큐디 비젼, 인크. | 조명 장치, 조명 장치용 광학 요소, 및 방법 |
US8384103B2 (en) * | 2010-03-04 | 2013-02-26 | Intellectual Discovery Co., Ltd. | Increasing contrast in electronic color displays via surface texturing of LEDs |
JP2011204657A (ja) | 2010-03-26 | 2011-10-13 | Enplas Corp | 光束制御部材およびこれを用いた照明装置 |
CN102237469A (zh) * | 2010-04-29 | 2011-11-09 | 展晶科技(深圳)有限公司 | 发光二极管的封装结构 |
US8354784B2 (en) | 2010-09-28 | 2013-01-15 | Intematix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
CN103155024B (zh) | 2010-10-05 | 2016-09-14 | 英特曼帝克司公司 | 具光致发光波长转换的固态发光装置及标牌 |
-
2007
- 2007-08-24 US US11/895,573 patent/US11114594B2/en active Active
-
2008
- 2008-06-20 DE DE102008029318A patent/DE102008029318A1/de not_active Withdrawn
- 2008-06-23 JP JP2008163311A patent/JP5091023B2/ja active Active
-
2012
- 2012-04-02 JP JP2012083671A patent/JP2012129568A/ja active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04137570A (ja) * | 1990-09-27 | 1992-05-12 | Sanyo Electric Co Ltd | 発光ダイオードランプ |
US20030038596A1 (en) * | 2001-08-21 | 2003-02-27 | Wen-Chih Ho | Light-mixing layer and method |
JP2004055772A (ja) * | 2002-07-18 | 2004-02-19 | Citizen Electronics Co Ltd | Led発光装置 |
JP2004341446A (ja) * | 2003-05-19 | 2004-12-02 | Nitto Jushi Kogyo Kk | 光拡散体及びそれを用いた光学部材乃至光学デバイス |
JP2005232305A (ja) * | 2004-02-19 | 2005-09-02 | Nichia Chem Ind Ltd | アルカリ土類金属アルミン酸塩蛍光体及びそれを用いた発光装置 |
WO2005091387A1 (ja) * | 2004-03-24 | 2005-09-29 | Toshiba Lighting & Technology Corporation | 発光装置および照明装置 |
JP2006114900A (ja) * | 2004-10-14 | 2006-04-27 | Agilent Technol Inc | 量子ドットと非量子蛍光材料を使って出力光を放射するためのデバイス及び方法 |
JP2006229109A (ja) * | 2005-02-21 | 2006-08-31 | Matsushita Electric Ind Co Ltd | 半導体発光装置およびその製造方法 |
JP2006269778A (ja) * | 2005-03-24 | 2006-10-05 | Nichia Chem Ind Ltd | 光学装置 |
JP2007149909A (ja) * | 2005-11-28 | 2007-06-14 | Nichia Chem Ind Ltd | 発光装置 |
JP2007165508A (ja) * | 2005-12-13 | 2007-06-28 | Sumitomo Osaka Cement Co Ltd | 発光素子封止用組成物及び発光素子並びに光半導体装置 |
JP2007173373A (ja) * | 2005-12-20 | 2007-07-05 | Toshiba Lighting & Technology Corp | 発光装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10784419B2 (en) | 2015-05-21 | 2020-09-22 | Nichia Corporation | Light emitting device |
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JP2009054995A (ja) | 2009-03-12 |
US20090050911A1 (en) | 2009-02-26 |
JP5091023B2 (ja) | 2012-12-05 |
DE102008029318A1 (de) | 2009-02-26 |
US11114594B2 (en) | 2021-09-07 |
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