JP2012129511A - 半導体装置及びその作製方法 - Google Patents
半導体装置及びその作製方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 128
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 12
- 229910007541 Zn O Inorganic materials 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 13
- 229910020923 Sn-O Inorganic materials 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 138
- 239000000758 substrate Substances 0.000 description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
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- 229910044991 metal oxide Inorganic materials 0.000 description 14
- 150000004706 metal oxides Chemical class 0.000 description 14
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- 230000000052 comparative effect Effects 0.000 description 9
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
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- 239000011521 glass Substances 0.000 description 6
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- 229910052739 hydrogen Inorganic materials 0.000 description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052783 alkali metal Inorganic materials 0.000 description 5
- 150000001340 alkali metals Chemical class 0.000 description 5
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- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
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- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
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- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
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- -1 hafnium aluminate Chemical class 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
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- 229910052779 Neodymium Inorganic materials 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
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- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】チャネル形成領域として機能する第1の酸化物半導体層と、当該第1の酸化物半導体層と重なるソース電極層及びドレイン電極層と、当該第1の酸化物半導体層、当該ソース電極層、及び当該ドレイン電極層と接するゲート絶縁層と、当該ゲート絶縁層に接して当該第1の酸化物半導体層と重なる第2の酸化物半導体層と、当該第2の酸化物半導体層上に設けられたゲート電極層とを有する半導体装置及びその作製に関する。
【選択図】図1
Description
102 ゲート電極層
103 ゲート絶縁層
104 導電膜
106a 導電膜
106b 導電膜
106c 導電膜
108 ソース電極層
108a ソース電極層
108b ソース電極層
108c ソース電極層
109 ドレイン電極層
109a ドレイン電極層
109b ドレイン電極層
109c ドレイン電極層
115 酸化物半導体層
116 酸化物半導体膜
165 酸化物半導体膜
166 酸化物半導体層
Claims (6)
- チャネル形成領域として機能する第1の酸化物半導体層と、
前記第1の酸化物半導体層と重なるソース電極層及びドレイン電極層と、
前記第1の酸化物半導体層、前記ソース電極層、及び前記ドレイン電極層と接するゲート絶縁層と、
前記ゲート絶縁層に接して前記第1の酸化物半導体層と重なる第2の酸化物半導体層と、
前記第2の酸化物半導体層上に設けられたゲート電極層と、
を有することを特徴とする半導体装置。 - 請求項1において、
前記第2の酸化物半導体層の仕事関数は、4電子ボルト以上5電子ボルト未満であることを特徴とする半導体装置。 - 請求項1又は請求項2において、
前記第2の酸化物半導体層は、In−Ga−Zn−O膜、In−Sn−O膜、In−Ga−O膜、In−Zn−O膜、Sn−O膜、In−O膜のいずれか一であることを特徴とする半導体装置。 - 絶縁表面上に、第1の酸化物半導体層を形成し、
前記第1の酸化物半導体層と重なるソース電極層及びドレイン電極層を形成し、
前記第1の酸化物半導体層、前記ソース電極層、及び前記ドレイン電極層と接するゲート絶縁層を形成し、
前記ゲート絶縁層に接して、前記第1の酸化物半導体層と重なる第2の酸化物半導体層を形成し、
前記第2の酸化物半導体層上にゲート電極層を形成することを特徴とする半導体装置の作製方法。 - 請求項4において、
前記第2の酸化物半導体層の仕事関数は、4電子ボルト以上5電子ボルト未満であることを特徴とする半導体装置の作製方法。 - 請求項4又は請求項5において、
前記第2の酸化物半導体層は、In−Ga−Zn−O膜、In−Sn−O膜、In−Ga−O膜、In−Zn−O膜、Sn−O膜、In−O膜のいずれか一であることを特徴とする半導体装置の作製方法。
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